专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06547977B1 Method for etching low k dielectrics 失效
标题翻译：蚀刻低k电介质的方法
公开(公告)号：US06547977B1
公开(公告)日：2003-04-15
申请号：US09610915
申请日：2000-07-05
申请人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
发明人： Chun Yan , Gary C. Hsueh , Yan Ye , Diana Xiaobing Ma
IPC分类号： C03C1500
CPC分类号： H01L21/31138
摘要： The present disclosure pertains to a method for plasma etching of low k materials, particularly polymeric-based low k materials. Preferably the polymeric-based materials are organic-based materials. The method employs an etchant plasma where the major etchant species are generated from a halogen other than fluorine and oxygen. The preferred halogen is chlorine. The volumetric (flow rate) ratio of the halogen:oxygen in the plasma source gas ranges from about 1:20 to about 20:1. The atomic ratio of the halogen:oxygen preferably falls within the range from about 1:20 to about 20:1. When the halogen is chlorine, the preferred atomic ratio of chlorine:oxygen ranges from about 1:10 to about 5:1. When this atomic ratio of chlorine:oxygen is used, the etch selectivity for the low k material over adjacent oxygen-comprising or nitrogen-comprising layers is advantageous, typically in excess of about 10:1. The plasma source gas may contain additives in an amount of 15% or less by volume which are designed to improve selectivity for the low k dielectric over an adjacent material, to provide a better etch profile, or to provide better critical dimension control, for example. When the additive contains fluorine, the amount of the additive is such that residual chlorine on the etched surface of the low k material comprises less than 5 atomic %.
摘要翻译：本公开涉及用于等离子体蚀刻低k材料，特别是基于聚合物的低k材料的方法。优选地，基于聚合物的材料是有机基材料。该方法采用蚀刻剂等离子体，其中主要蚀刻剂物质由除氟和氧之外的卤素产生。优选的卤素是氯。等离子体源气体中的卤素：氧的体积（流速）比为约1:20至约20:1。卤素：氧的原子比优选在约1:20至约20:1的范围内。当卤素为氯时，氯：氧的优选原子比范围为约1:10至约5:1。当使用氯原子的氧原子比时，低k材料在相邻的含氧或含氮层上的蚀刻选择性是有利的，通常超过约10:1。等离子体源气体可以含有体积的15％或更少的添加剂，其被设计成提高相邻材料上的低k电介质的选择性，以提供更好的蚀刻轮廓，或提供更好的临界尺寸控制，例如。当添加剂含氟时，添加剂的量使得低k材料的蚀刻表面上的残留氯含量小于5原子％。

IPRDB

热门服务

关于我们

友情链接

联系方式