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    • 1. 发明授权
    • Nickel silicide stripping after nickel silicide formation
    • 硅化镍镀层后形成硅化镍
    • US06362095B1
    • 2002-03-26
    • US09679876
    • 2000-10-05
    • Christy Mei-Chu WooGeorge Jonathan KluthJacques Bertrand
    • Christy Mei-Chu WooGeorge Jonathan KluthJacques Bertrand
    • H01L214763
    • H01L29/665H01L21/28518
    • A method of manufacturing a MOSFET semiconductor device comprises providing a gate electrode having first and second opposing sidewalls over a substrate having source/drain regions; providing a gate oxide between the gate electrode and the substrate; forming first and second sidewall spacers respectively disposed adjacent the first and second sidewalls; forming nickel silicide layers disposed on the source/drain regions and the gate electrode, and two etching steps. The nickel silicide layers are formed during a rapid thermal anneal at temperatures from about 380 to 600° C. The first etch is performed with a sulfuric peroxide mix to remove unreacted nickel, and the second etch is performed with an ammonia peroxide mix to remove nickel silicide formed over the first and second sidewall spacers.
    • 一种制造MOSFET半导体器件的方法包括在具有源极/漏极区域的衬底上提供具有第一和第二相对侧壁的栅电极; 在栅电极和衬底之间提供栅极氧化物; 形成分别设置在所述第一和第二侧壁附近的第一和第二侧壁间隔件; 形成设置在源极/漏极区域和栅电极上的硅化镍层,以及两个蚀刻步骤。 在约380-600℃的温度下,在快速热退火期间形成硅化镍层。用硫酸过氧化物混合物进行第一次蚀刻以除去未反应的镍,并且用氨过氧化物混合物进行第二次蚀刻以除去镍 硅化物形成在第一和第二侧壁间隔物上。
    • 4. 发明授权
    • Effect of substrate surface treatment on 193 NM resist processing
    • 衬底表面处理对193 NM抗蚀剂加工的影响
    • US06746973B1
    • 2004-06-08
    • US10212985
    • 2002-08-05
    • Catherine B. LabelleErnesto GallardoRamkumar SubramanianJacques Bertrand
    • Catherine B. LabelleErnesto GallardoRamkumar SubramanianJacques Bertrand
    • H01L21302
    • G03F7/16G03F7/091H01L21/3105H01L21/31144
    • One aspect of the present invention relates to a system and method for mitigating surface abnormalities on a semiconductor structure. The method involves exposing the layer to a first plasma treatment in order to mitigate surface interactions between the layer and a subsequently formed photoresist without substantially etching the layer, the first plasma comprising oxygen and nitrogen; forming a patterned photoresist over the treated layer, the patterned photoresist being formed using 193 nm or lower radiation; and etching the treated layer through openings of the patterned photoresist. The system and method also includes a monitor processor for determining whether the plasma treatment has been administered and for adjusting the plasma treatment components. The monitor processor transmits a pulse, receives a reflected pulse response and analyzes the response. An optional second plasma treatment comprising nitrogen and hydrogen may be administered after the first plasma treatment but before forming the photoresist.
    • 本发明的一个方面涉及一种用于减轻半导体结构上的表面异常的系统和方法。 该方法包括将层暴露于第一等离子体处理,以便减轻层与随后形成的光致抗蚀剂之间的表面相互作用,而基本上不蚀刻该层,第一等离子体包含氧和氮; 在处理的层上形成图案化的光致抗蚀剂,使用193nm或更低的辐射形成图案化的光致抗蚀剂; 并通过图案化光致抗蚀剂的开口蚀刻处理层。 该系统和方法还包括用于确定等离子体处理是否已被施用并用于调整等离子体处理组件的监视器处理器。 监视器处理器发送脉冲,接收反射的脉冲响应并分析响应。 包括氮和氢的任选的第二等离子体处理可以在第一等离子体处理之后但在形成光致抗蚀剂之前施用。
    • 7. 发明授权
    • Nickel silicide process using starved silicon diffusion barrier
    • 镍硅化物工艺使用饥饿的硅扩散屏障
    • US06525391B1
    • 2003-02-25
    • US09776748
    • 2001-02-06
    • Jacques BertrandMinh Van Ngo
    • Jacques BertrandMinh Van Ngo
    • H01L2900
    • H01L29/665H01L21/28061H01L21/28518H01L29/6656Y10S257/90
    • A MOSFET semiconductor device includes a substrate, a gate electrode, a gate oxide, first and second sets sidewall spacers, and nickel silicide layers. The gate oxide is disposed between the gate electrode and the substrate, and the substrate includes source/drain regions. The gate electrode has first and second opposing sidewalls, and the first set of sidewall spacers are formed from a silicon starved spacer materials, examples of which include SiOX, wherein X>2, SiNX, wherein X>1, or SiOXNY, wherein X+Y>2. The second set of sidewall spacers are formed from silicon nitride and are respectively disposed adjacent the first set of sidewall spacers. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. The first set of sidewall spacers act as a silicon diffusion barrier for preventing silicon from migrating from the gate electrode to the second set of sidewall spacers. A method of manufacturing the semiconductor device is also disclosed.
    • MOSFET半导体器件包括衬底,栅电极,栅极氧化物,第一和第二组侧壁间隔物以及硅化镍层。 栅极氧化物设置在栅极电极和衬底之间,并且衬底包括源极/漏极区域。 栅电极具有第一和第二相对的侧壁,并且第一组侧壁间隔物由硅缺陷间隔物材料形成,其实例包括SiOX,其中X> 2,SiNX,其中X> 1或SiOXNY,其中X + Y> 2。 第二组侧壁间隔件由氮化硅形成,并且分别设置在第一组侧壁间隔件附近。 硅化镍层设置在源/漏区和栅电极上。 第一组侧壁间隔件用作硅扩散屏障,用于防止硅从栅电极迁移到第二组侧壁间隔物。 还公开了制造半导体器件的方法。