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    • 7. 发明授权
    • Electrically driven detachable gondola lift or chair lift
    • 电驱动可拆卸缆车升降机或升降椅
    • US4641584A
    • 1987-02-10
    • US782302
    • 1985-10-01
    • Jean-Jacques Bertrand
    • Jean-Jacques Bertrand
    • B61B12/00B61B12/02B61B12/10B61B11/00
    • B61B12/105B61B12/022
    • A detachable chair or gondola lift is disclosed wherein an alternator is driven by a rope bull-wheel. The alternator supplies a synchronous motor for driving friction wheels or other mechanisms for driving the cars in an end station of the chair or gondola lift. The electrical connection between the alternator and the synchronous motor ensures synchronous rotation of the motor. The alternator can be connected to the bull-wheel by a multiplier gear, the bull-wheel being either a tension bull-wheel or a driving bull-wheel. In the case of a tension bull-wheel, the alternator is mounted on the bull-wheel support carriage to avoid a flexible mechanical transmission. The alternator can be coupled to the high speed shaft of a driving bull-wheel reducer gear, for example, by a trapizoidal belt transmission. At low speed, the excitation of the alternator is increased to preserve the synchronism of the movements. Such excitation is accomplished by an auxiliary power source, or by self excitation by suitable permanent magnets and filters.
    • 公开了一种可拆卸的椅子或吊车升降机,其中交流发电机由绳索斗轮驱动。 交流发电机提供用于驱动摩擦轮的同步电动机或用于在椅子或吊车升降机的终端中驾驶汽车的其它机构。 交流发电机和同步电机之间的电气连接确保电机同步旋转。 交流发电机可以通过一个倍增器连接到斗轮,这个斗轮是紧张的斗轮或是一个驱动的斗轮。 在张力斗轮的情况下,交流发电机安装在斗轮支撑架上,以避免弹性机械传动。 交流发电机可以例如通过带状带传动装置联接到驱动轮轮减速器齿轮的高速轴上。 在低速时,增加交流发电机的激励以保持运动的同步。 这种激励是通过辅助电源实现的,或者通过合适的永久磁铁和滤波器的自激而实现。
    • 9. 发明授权
    • Nickel silicide process using starved silicon diffusion barrier
    • 镍硅化物工艺使用饥饿的硅扩散屏障
    • US06525391B1
    • 2003-02-25
    • US09776748
    • 2001-02-06
    • Jacques BertrandMinh Van Ngo
    • Jacques BertrandMinh Van Ngo
    • H01L2900
    • H01L29/665H01L21/28061H01L21/28518H01L29/6656Y10S257/90
    • A MOSFET semiconductor device includes a substrate, a gate electrode, a gate oxide, first and second sets sidewall spacers, and nickel silicide layers. The gate oxide is disposed between the gate electrode and the substrate, and the substrate includes source/drain regions. The gate electrode has first and second opposing sidewalls, and the first set of sidewall spacers are formed from a silicon starved spacer materials, examples of which include SiOX, wherein X>2, SiNX, wherein X>1, or SiOXNY, wherein X+Y>2. The second set of sidewall spacers are formed from silicon nitride and are respectively disposed adjacent the first set of sidewall spacers. The nickel silicide layers are disposed on the source/drain regions and the gate electrode. The first set of sidewall spacers act as a silicon diffusion barrier for preventing silicon from migrating from the gate electrode to the second set of sidewall spacers. A method of manufacturing the semiconductor device is also disclosed.
    • MOSFET半导体器件包括衬底,栅电极,栅极氧化物,第一和第二组侧壁间隔物以及硅化镍层。 栅极氧化物设置在栅极电极和衬底之间,并且衬底包括源极/漏极区域。 栅电极具有第一和第二相对的侧壁,并且第一组侧壁间隔物由硅缺陷间隔物材料形成,其实例包括SiOX,其中X> 2,SiNX,其中X> 1或SiOXNY,其中X + Y> 2。 第二组侧壁间隔件由氮化硅形成,并且分别设置在第一组侧壁间隔件附近。 硅化镍层设置在源/漏区和栅电极上。 第一组侧壁间隔件用作硅扩散屏障,用于防止硅从栅电极迁移到第二组侧壁间隔物。 还公开了制造半导体器件的方法。
    • 10. 发明授权
    • Nickel silicide stripping after nickel silicide formation
    • 硅化镍镀层后形成硅化镍
    • US06362095B1
    • 2002-03-26
    • US09679876
    • 2000-10-05
    • Christy Mei-Chu WooGeorge Jonathan KluthJacques Bertrand
    • Christy Mei-Chu WooGeorge Jonathan KluthJacques Bertrand
    • H01L214763
    • H01L29/665H01L21/28518
    • A method of manufacturing a MOSFET semiconductor device comprises providing a gate electrode having first and second opposing sidewalls over a substrate having source/drain regions; providing a gate oxide between the gate electrode and the substrate; forming first and second sidewall spacers respectively disposed adjacent the first and second sidewalls; forming nickel silicide layers disposed on the source/drain regions and the gate electrode, and two etching steps. The nickel silicide layers are formed during a rapid thermal anneal at temperatures from about 380 to 600° C. The first etch is performed with a sulfuric peroxide mix to remove unreacted nickel, and the second etch is performed with an ammonia peroxide mix to remove nickel silicide formed over the first and second sidewall spacers.
    • 一种制造MOSFET半导体器件的方法包括在具有源极/漏极区域的衬底上提供具有第一和第二相对侧壁的栅电极; 在栅电极和衬底之间提供栅极氧化物; 形成分别设置在所述第一和第二侧壁附近的第一和第二侧壁间隔件; 形成设置在源极/漏极区域和栅电极上的硅化镍层,以及两个蚀刻步骤。 在约380-600℃的温度下,在快速热退火期间形成硅化镍层。用硫酸过氧化物混合物进行第一次蚀刻以除去未反应的镍,并且用氨过氧化物混合物进行第二次蚀刻以除去镍 硅化物形成在第一和第二侧壁间隔物上。