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1. 发明授权

US5194836A Thin film, microwave frequency manifolded filter bank 失效
标题翻译：薄膜，微波频率歧管滤波器组
公开(公告)号：US5194836A
公开(公告)日：1993-03-16
申请号：US750694
申请日：1991-08-20
申请人： Christopher R. Vale , Dale E. Dawson , David M. Krafcsik
发明人： Christopher R. Vale , Dale E. Dawson , David M. Krafcsik
IPC分类号： H03H9/54 , H03H9/58
CPC分类号： H03H9/588 , H03H9/542
摘要： A miniature thin film microwave frequency acoustic filter device comprising acoustic resonators formed on the same dielectric membrane so that their frequency responses are identical. Because the filters are miniature, they can be manifolded without manifolding circuitry that normally causes significant filter losses.
摘要翻译：微型薄膜微波频率声滤波器装置包括形成在同一电介质膜上的声谐振器，使得其频率响应相同。因为过滤器是微型的，所以它们可以是歧管的，没有通常导致显着的过滤器损失的歧管电路。

2. 发明授权

US06486511B1 Solid state RF switch with high cutoff frequency 有权
标题翻译：具有高截止频率的固态RF开关
公开(公告)号：US06486511B1
公开(公告)日：2002-11-26
申请号：US09942824
申请日：2001-08-30
申请人： Harvey C. Nathanson , Philip C. Smith , R. Chris Clarke , David M. Krafcsik , Lawrence E. Dickens
发明人： Harvey C. Nathanson , Philip C. Smith , R. Chris Clarke , David M. Krafcsik , Lawrence E. Dickens
IPC分类号： H01L2974
CPC分类号： H01L29/66666 , H01L29/435 , H01L29/7827
摘要： A solid state microwave switch having a plurality of adjacent parallel fingers covered with an oxide layer. One end of a finger is an N+ source region while the other end is an N+ drain region, with a current conducting N region between them. The oxide layer is covered with a gate layer to which a gate signal is applied for control of current between the N+ regions through the N region. The gate layer is highly resistive and has a sheet resistance on the order of millions of ohms per square. The length from the source to drain region is around 2 &mgr;m, and the fingers are spaced with a pitch of around 1 &mgr;m.
摘要翻译：一种固态微波开关，具有被氧化物层覆盖的多个相邻的平行指状物。手指的一端是N +源极区域，而另一端是N +漏极区域，它们之间具有导电的N区域。氧化物层被施加栅极信号的栅极层覆盖，以控制通过N区域的N +区域之间的电流。栅极层是高电阻性的，并且具有数百万欧姆/平方的数量级的薄层电阻。从源极到漏极区域的长度约为2μm，并且指状物以约1um的间距间隔开。

3. 发明授权

US5334959A 180 degree phase shifter bit 失效
标题翻译： 180度移相器位
公开(公告)号：US5334959A
公开(公告)日：1994-08-02
申请号：US046323
申请日：1993-04-15
申请人： David M. Krafcsik , David W. Chan
发明人： David M. Krafcsik , David W. Chan
IPC分类号： H01P1/185 , H01P1/18
CPC分类号： H01P1/185
摘要： An improved 180.degree. phase shifter bit that uses embedded switches to selectively connect the RF input and RF output to a loosely coupled transmission line segment and a pi section of transmission line. A hybrid coupler is selected having characteristic impedance of less than 50 ohms and having coupling of less than -3 db. The result of this coupling choice is extremely low insertion loss. The resultant impedance mismatch is compensated for by providing oversized field effect transistors that allow RF signal in both the grounded coupler and the pi section of transmission lines that are 180.degree. out of phase. The RF signal present in both the coupler and pi section of the transmission line results in a cancellation effect allowing recovery of the input/output impedance over an approximately one octave bandwidth.
摘要翻译：改进的180°移相器位，使用嵌入式开关选择性地将RF输入和RF输出连接到松散耦合的传输线段和传输线的pi部分。选择具有小于50欧姆的特征阻抗并具有小于-3db的耦合的混合耦合器。该耦合选择的结果是极低的插入损耗。通过提供过大的场效应晶体管来补偿所得到的阻抗失配，所述场效应晶体管允许接地耦合器和传输线的pi部分的180°异相的RF信号。存在于传输线的耦合器和pi部分中的RF信号导致消除效应，允许在大约一个八度带宽上恢复输入/输出阻抗。

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