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1. 发明授权

US06970757B1 Method and apparatus for updating control state variables of a process control model based on rework data 有权
标题翻译：基于返工数据更新过程控制模型的控制状态变量的方法和装置
公开(公告)号：US06970757B1
公开(公告)日：2005-11-29
申请号：US09838467
申请日：2001-04-19
申请人： Joyce S. Oey Hewett , Anthony J. Toprac , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Joyce S. Oey Hewett , Anthony J. Toprac , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41875 , G05B2219/32179 , G05B2219/32228 , G05B2219/45031 , Y02P90/22 , Y02P90/86
摘要： A method for controlling a manufacturing process includes processing a plurality of workpieces in a tool; monitoring a rework rate associated with the workpieces processed in the tool; and initiating an automatic corrective action in response to the rework rate being greater than a predetermined threshold. A manufacturing system includes a tool adapted to process a plurality of workpieces and a rework controller adapted to monitor a rework rate associated with the workpieces processed in the tool and initiate an automatic corrective action in response to the rework rate being greater than a predetermined threshold.
摘要翻译：一种用于控制制造过程的方法包括在工具中处理多个工件; 监测与工具中处理的工件相关联的返工率; 以及响应于所述返工率大于预定阈值而启动自动校正动作。制造系统包括适于处理多个工件的工具和适于监测与工具中处理的工件相关联的返工率的返工控制器，并响应于返工率大于预定阈值而启动自动校正动作。

2. 发明授权

US06937914B1 Method and apparatus for controlling process target values based on manufacturing metrics 失效
标题翻译：基于制造指标控制过程目标值的方法和装置
公开(公告)号：US06937914B1
公开(公告)日：2005-08-30
申请号：US09789872
申请日：2001-02-21
申请人： Christopher A. Bode , Thomas J. Sonderman , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Michael L. Miller
发明人： Christopher A. Bode , Thomas J. Sonderman , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Michael L. Miller
IPC分类号： G05B19/418 , G06F19/00
CPC分类号： G05B19/41865 , G05B2219/32063 , G05B2219/45031 , Y02P90/20 , Y02P90/86
摘要： A method for controlling a tool adapted to process workpieces in accordance with an operating recipe based on a process target value is provided. The method includes collecting manufacturing characteristic data associated with the workpieces; correlating the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces; and adjusting the process target value based on the first manufacturing metric distribution. A manufacturing system includes a processing tool and a target monitor. The processing tool is adapted to process workpieces in accordance with an operating recipe based on a process target value. The target monitor is adapted to collect manufacturing characteristic data associated with the workpieces, correlate the manufacturing characteristic data with a first manufacturing metric to generate a first manufacturing metric distribution for the workpieces, and adjust the process target value based on the first manufacturing metric distribution.
摘要翻译：提供了一种用于控制适于根据基于过程目标值的操作配方来处理工件的工具的方法。该方法包括收集与工件相关联的制造特性数据; 将所述制造特征数据与第一制造度量相关联，以产生所述工件的第一制造度量分布; 以及基于所述第一制造度量分布来调整所述过程目标值。制造系统包括处理工具和目标监视器。处理工具适于根据基于过程目标值的操作配方来处理工件。目标监视器适于收集与工件相关联的制造特性数据，将制造特性数据与第一制造度量相关联，以产生工件的第一制造度量分布，并且基于第一制造度量分布来调整过程目标值。

3. 发明授权

US06615098B1 Method and apparatus for controlling a tool using a baseline control script 有权
标题翻译：使用基线控制脚本控制工具的方法和装置
公开(公告)号：US06615098B1
公开(公告)日：2003-09-02
申请号：US09789871
申请日：2001-02-21
申请人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Christopher A. Bode , Alexander J. Pasadyn , Anthony J. Toprac , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F1760
CPC分类号： G05B19/41865 , G05B19/0426 , G05B2219/32129 , G05B2219/36225 , G05B2219/45031 , Y02P90/20
摘要： A method for controlling a manufacturing system includes processing workpieces in a plurality of tools; initiating a baseline control script for a selected tool of the plurality of tools; providing context information for the baseline control script; determining a tool type based on the context information; selecting a control routine for the selected tool based on the tool type; and executing the control routine to generate a control action for the selected tool. A manufacturing system includes a plurality of tools adapted to process workpieces, a control execution manager, and a control executor. The control execution manager is adapted to initiate a baseline control script for a selected tool of the plurality of tools and provide context information for the baseline control script. The control executor is adapted to execute the baseline control script, determine a tool type based on the context information, select a control routine for the selected tool based on the tool type, and execute the control routine to generate a control action for the selected tool.
摘要翻译：一种用于控制制造系统的方法包括：处理多个工具中的工件; 为所述多个工具的所选择的工具启动基线控制脚本; 提供基线控制脚本的上下文信息; 基于上下文信息确定工具类型; 根据刀具类型选择所选刀具的控制程序; 以及执行所述控制程序以产生所选择的工具的控制动作。制造系统包括适于处理工件的多个工具，控制执行管理器和控制执行器。所述控制执行管理器适于启动用于所述多个工具的所选工具的基线控制脚本并提供所述基线控制脚本的上下文信息。控制执行器适于执行基线控制脚本，基于上下文信息确定工具类型，基于工具类型选择所选刀具的控制程序，并执行控制程序以生成所选刀具的控制动作。

4. 发明授权

US06607926B1 Method and apparatus for performing run-to-run control in a batch manufacturing environment 有权
标题翻译：在批量制造环境中执行运行控制的方法和装置
公开(公告)号：US06607926B1
公开(公告)日：2003-08-19
申请号：US09371665
申请日：1999-08-10
申请人： Anthony J. Toprac , William J. Campbell , Christopher A. Bode
发明人： Anthony J. Toprac , William J. Campbell , Christopher A. Bode
IPC分类号： H01L2100
CPC分类号： G03F7/70633 , H01L22/20
摘要： The present invention provides for a method and an apparatus for controlling manufacturing processes using a hierarchical system. A first lot of semiconductor devices is processed using a first set of control input parameters. The first set of control input parameters is stored in one of a plurality of hierarchical levels, the first set of control input parameters being available for processing of a second lot of semiconductor devices. Process data is acquired from the processing of the first lot of semiconductor devices. A second set of control input parameters is determined for a subsequent lot of semiconductor devices based upon the acquired process data. The second set of control input parameters is stored in one of a plurality of hierarchical levels, the first and second sets of control input settings being available for processing of a third lot of semiconductor devices.
摘要翻译：本发明提供一种使用分级系统来控制制造过程的方法和装置。使用第一组控制输入参数来处理第一批半导体器件。第一组控制输入参数被存储在多个层级之一中，第一组控制输入参数可用于处理第二批半导体器件。从第一批半导体器件的处理中获取工艺数据。基于所获取的处理数据，为随后的许多半导体器件确定第二组控制输入参数。第二组控制输入参数存储在多个分层级之一中，第一组和第二组控制输入设置可用于处理第三批半导体器件。

5. 发明授权

US06535774B1 Incorporation of critical dimension measurements as disturbances to lithography overlay run to run controller 失效
标题翻译：将关键尺寸测量结合到光刻覆盖的干扰运行到运行控制器
公开(公告)号：US06535774B1
公开(公告)日：2003-03-18
申请号：US09373218
申请日：1999-08-12
申请人： Christopher A. Bode , Anthony J. Toprac
发明人： Christopher A. Bode , Anthony J. Toprac
IPC分类号： G06F1900
CPC分类号： H01L21/67276
摘要： The invention, in its various aspects, is a method and apparatus for processing a semiconductor wafer. The method, in one embodiment, comprises processing a wafer lot through an exposure tool; identifying a disturbance in an overlay operation arising from critical dimension control of the exposure tool; modeling the identified disturbance; and applying the model to modify an overlay input parameter. The invention, in another aspect, is an apparatus for controlling a photolithography process. The apparatus comprising an exposure tool and a computer. The exposure tool includes an overlay controller capable of receiving a plurality of overlay control inputs and a critical dimension controller. The computer receives data from the exposure tool and is programmed to perform a method. The programmed method includes identifying a disturbance in an overlay operation arising from critical dimension control of the exposure tool; modeling the identified disturbance; and applying the model to modify an overlay control input.
摘要翻译：本发明在各方面是用于处理半导体晶片的方法和装置。在一个实施例中，该方法包括通过曝光工具处理晶片批次; 识别由曝光工具的关键尺寸控制引起的覆盖操作中的干扰; 对识别出的干扰进行建模; 并应用模型来修改覆盖输入参数。在另一方面，本发明是一种用于控制光刻工艺的设备。该装置包括曝光工具和计算机。曝光工具包括能够接收多个重叠控制输入和关键尺寸控制器的覆盖控制器。计算机从曝光工具接收数据，并编程为执行一种方法。编程方法包括识别由曝光工具的关键尺寸控制引起的覆盖操作中的干扰; 对识别出的干扰进行建模; 并应用该模型来修改覆盖控制输入。

6. 发明授权

US06528331B1 Method for identifying and controlling impact of ambient conditions on photolithography processes 有权
公开(公告)号：US06528331B1
公开(公告)日：2003-03-04
申请号：US10094061
申请日：2002-03-08
申请人： Christopher A. Bode , Anthony J. Toprac
发明人： Christopher A. Bode , Anthony J. Toprac
IPC分类号： H01L2166
CPC分类号： G03F7/705 , G03F7/70525 , G03F7/70858 , H01L22/26
摘要： The invention is, in its various aspects, a method and apparatus for processing a semiconductor wafer. More particularly, the invention is a method and apparatus for identifying and controlling the impact of ambient conditions on photolithography processes. In a first aspect, the invention is a method for processing a semiconductor wafer. The method comprises identifying a disturbance in a photolithographic process arising from an ambient condition; modeling the identified disturbance; and applying the model to modify a control input parameter. In a second aspect, the invention is an apparatus for controlling a photolithography process. The apparatus includes an exposure tool, including a photolithography controller; and a computer receiving data from the exposure tool. The computer is programmed to perform a method comprising: identifying a disturbance in a photolithographic process arising from an ambient condition; modeling the identified disturbance; and applying the model to modify a control input parameter.

7. 发明授权

US06622061B1 Method and apparatus for run-to-run controlling of overlay registration 有权
公开(公告)号：US06622061B1
公开(公告)日：2003-09-16
申请号：US10160963
申请日：2002-05-31
申请人： Anthony J. Toprac , Christopher A. Bode , Richard D. Edwards
发明人： Anthony J. Toprac , Christopher A. Bode , Richard D. Edwards
IPC分类号： G06F1900
CPC分类号： G03F7/70633 , H01L22/20
摘要： The present invention provides for a method and apparatus for correction of overlay control errors. Semiconductor devices are processed based upon control input parameters. The processed semiconductor devices are examined in a review station. The control input parameters are modified in response to the examination of the processed semiconductor devices. New control input parameters are implemented for a subsequent run of the semiconductor device processing step based upon the modification of the control input parameters.

8. 发明授权

US06699727B1 Method for prioritizing production lots based on grade estimates and output requirements 有权
标题翻译：根据年龄估计和产出要求确定生产批次的方法
公开(公告)号：US06699727B1
公开(公告)日：2004-03-02
申请号：US09821675
申请日：2001-03-29
申请人： Anthony J. Toprac , Joyce S. Oey Hewett , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Anthony J. Toprac , Joyce S. Oey Hewett , Christopher A. Bode , Alexander J. Pasadyn , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G01R3126
CPC分类号： H01L22/20 , G05B19/418 , G05B2219/32194 , G05B2219/32263 , Y02P90/02 , Y02P90/18 , Y02P90/20 , Y02P90/22
摘要： A method for prioritizing production flow includes processing a plurality of manufactured items in a process flow; measuring characteristics of a plurality of manufactured items in the process flow; estimating performance grades for the plurality of manufactured items based on the measured characteristics; grouping the manufactured items with like estimated performance grades; assigning priorities to groups of manufactured items with like estimated performance grades; and directing the plurality of manufactured items through the process flow based on the assigned priorities. A manufacturing system includes a plurality of processing tools adapted to process a plurality of manufactured items in a process flow, a metrology tool, and a process control server. The metrology tool is adapted to measure characteristics of a plurality of manufactured items in the process flow. The process control server is adapted to estimate performance grades for the plurality of manufactured items based on the measured characteristics, group the manufactured items with like estimated performance grades, assign priorities to groups of manufactured items with like estimated performance grades, and direct the plurality of manufactured items through the process flow based on the assigned priorities.
摘要翻译：一种用于确定生产流程优先级的方法包括在处理流程中处理多个制造的物品; 测量处理流程中的多个制成品的特性; 基于所测量的特性来估计所述多个制造物品的性能等级; 对具有相似估计性能等级的制成品进行分组; 将优先事项分配给具有类似估计绩效等级的制成品组; 以及基于所分配的优先级，通过所述处理流程来引导所述多个制造的物品。制造系统包括多个处理工具，其适用于处理流程中的多个制造物品，计量工具和过程控制服务器。计量工具适于测量处理流程中的多个制造物品的特性。过程控制服务器适于基于测量的特性来估计多个制造物品的性能等级，将具有相似估计性能等级的制造物品分组，将具有相似估计性能等级的制造商品组的优先级分配给多个基于分配的优先级，通过流程流程制造出的物品。

9. 发明授权

US06675058B1 Method and apparatus for controlling the flow of wafers through a process flow 有权
标题翻译：通过工艺流程控制晶片流动的方法和装置
公开(公告)号：US06675058B1
公开(公告)日：2004-01-06
申请号：US09821630
申请日：2001-03-29
申请人： Alexander J. Pasadyn , Anthony J. Toprac , Christopher A. Bode , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
发明人： Alexander J. Pasadyn , Anthony J. Toprac , Christopher A. Bode , Joyce S. Oey Hewett , Anastasia Oshelski Peterson , Thomas J. Sonderman , Michael L. Miller
IPC分类号： G06F1900
CPC分类号： G05B19/41865 , G05B2219/32272 , H01L21/67276 , Y02P90/18 , Y02P90/20 , Y02P90/86
摘要： A method for controlling the flow of wafers through a process flow includes monitoring operating states of a plurality of processing tools adapted to process wafers; measuring a characteristic of a particular incoming wafer; identifying a particular processing tool having an operating state complimentary to the measured characteristic; and routing the particular incoming wafer to the particular processing tool for processing. A manufacturing system includes a plurality of processing tools adapted to process wafers and a process control server. The process control server is adapted to access metrology data related to a characteristic of a particular incoming wafer, identify a particular processing tool having an operating state complimentary to the characteristic, and route the particular incoming wafer to the particular processing tool for processing.
摘要翻译：用于通过工艺流程控制晶片流动的方法包括监测适于处理晶片的多个处理工具的操作状态; 测量特定输入晶片的特性; 识别具有与测量特性相互补充的操作状态的特定加工工具; 并将特定进入的晶片路由到特定的处理工具进行处理。制造系统包括适于处理晶片的多个处理工具和过程控制服务器。过程控制服务器适于访问与特定输入晶片的特性相关的度量数据，识别具有与该特征相互补充的操作状态的特定处理工具，并将特定输入晶片路由到特定处理工具进行处理。

10. 发明授权

US06410351B1 Method and apparatus for modeling thickness profiles and controlling subsequent etch process 有权
标题翻译：用于建模厚度剖面和控制后续蚀刻工艺的方法和装置
公开(公告)号：US06410351B1
公开(公告)日：2002-06-25
申请号：US09615481
申请日：2000-07-13
申请人： Christopher A. Bode , Anthony J. Toprac
发明人： Christopher A. Bode , Anthony J. Toprac
IPC分类号： H01L214763
CPC分类号： H01L22/20
摘要： A processing line includes a deposition tool, a metrology tool, an etch tool, and a process controller. The deposition tool is adapted to form a process layer on a plurality of wafers. The metrology tool is adapted to measure the thickness of the process layer for a sample of the wafers. The etch tool is adapted to etch the process layer in accordance with an operating recipe. The process controller is adapted to store a thickness profile model of the deposition tool, generate predicted process layer thicknesses for the wafers not measured by the metrology tool based on the process layer thickness measurements of the wafers in the sample and the thickness profile model, and modify the operating recipe of the etch tool based on the predicted process layer thicknesses. A method for controlling wafer uniformity includes storing a thickness profile model of a deposition tool; depositing a process layer on a plurality of wafers in the deposition tool; measuring the thickness of the process layer for a sample of the wafers; generating predicted process layer thicknesses for the wafers not measured based on the process layer thickness measurements and the thickness profile model; and etching the process layer in an etching tool in accordance with an operating recipe, the operating recipe being based on the predicted process layer thicknesses.
摘要翻译：处理线包括沉积工具，计量工具，蚀刻工具和过程控制器。沉积工具适于在多个晶片上形成工艺层。测量工具适于测量晶片样品的工艺层的厚度。蚀刻工具适于根据操作配方蚀刻工艺层。过程控制器适于存储沉积工具的厚度剖面模型，基于样品中的晶片的过程层厚度测量和厚度剖面模型，生成未被测量工具测量的晶片的预测处理层厚度，以及基于预测的处理层厚度修改蚀刻工具的操作配方。一种用于控制晶片均匀性的方法包括：存储沉积工具的厚度剖面模型; 在所述沉积工具中的多个晶片上沉积工艺层; 测量晶片样品的工艺层的厚度; 根据工艺层厚度测量和厚度剖面模型，生成未测量晶片的预测工艺层厚度; 并且根据操作配方在蚀刻工具中蚀刻处理层，操作配方基于预测的处理层厚度。

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