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1. 发明授权

US07235461B2 Method for bonding semiconductor structures together 有权
标题翻译：将半导体结构结合在一起的方法
公开(公告)号：US07235461B2
公开(公告)日：2007-06-26
申请号：US10832267
申请日：2004-04-27
申请人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
发明人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
IPC分类号： H01L21/46
CPC分类号： H01L21/76259 , H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.
摘要翻译：描述将半导体结构结合在一起的方法。该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及通过分子键合将接合表面结合在一起以形成复合结构。

2. 发明授权

US07645392B2 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US07645392B2
公开(公告)日：2010-01-12
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括用NH 4 OH / H 2 O 2溶液处理氧化表面，处理参数足以从晶片表面蚀刻约大约至大约120埃，然后在低于约50℃的温度下用盐酸处理蚀刻的表面持续时间少于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

3. 发明申请

US20060273068A1 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US20060273068A1
公开(公告)日：2006-12-07
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括在处理参数下处理含有NH 4 OH / H 2 O 2 O 2的溶液的氧化表面，所述处理参数足以蚀刻至约约120埃，然后在低于约50℃的温度下用盐酸物质处理蚀刻表面，持续时间小于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

4. 发明申请

US20050218111A1 Methods for preparing a bonding surface of a semiconductor wafer 审中-公开
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US20050218111A1
公开(公告)日：2005-10-06
申请号：US10875233
申请日：2004-06-25
申请人： Christophe Maleville , Corinne Maunand Tussot
发明人： Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/306 , H01L21/762 , B44C1/22 , H01L21/302
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface using a mix of NH4OH/H2O2 to increase the bonding energy between the first and second wafers. The treatment parameters are chosen such that etching occurs that is sufficient to remove isolated particles from the oxidized surface, but that is sufficiently weak to smooth the surface without creating rough patches thereon. Also described is a thin layer removal process, which may advantageously be used to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括使用NH 4 OH / H 2 O 2 O 2的混合物处理氧化表面以增加第一和第二晶圆选择处理参数使得发生足以从氧化表面除去分离的颗粒的蚀刻，但是足够弱以使表面光滑而不在其上产生粗糙的斑块。还描述了薄层去除工艺，其可有利地用于制造绝缘体上半导体结构。

5. 发明申请

US20070117229A1 METHODS FOR MINIMIZING DEFECTS WHEN TRANSFERRING A SEMICONDUCTOR USEFUL LAYER 有权
标题翻译：用于在传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20070117229A1
公开(公告)日：2007-05-24
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/66
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

6. 发明授权

US07071077B2 Method for preparing a bonding surface of a semiconductor layer of a wafer 有权
标题翻译：制备晶片半导体层的接合面的方法
公开(公告)号：US07071077B2
公开(公告)日：2006-07-04
申请号：US10808288
申请日：2004-03-25
申请人： Christophe Maleville , Corinne Maunand Tussot
发明人： Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/02052 , B08B3/12 , B08B2203/005 , Y10S438/974
摘要： A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.
摘要翻译：描述了制备晶片的半导体层的接合表面的方法。该方法包括处理接合表面以氧化污染物，然后清洁粘合表面以基本上除去剩余的所有污染物。然后使用臭氧来氧化粘结表面以改善粘合表面的亲水性。在一个实施方案中，制备两个晶片，然后粘合在一起以形成结构。

7. 发明授权

US07749862B2 Methods for minimizing defects when transferring a semiconductor useful layer 有权
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US07749862B2
公开(公告)日：2010-07-06
申请号：US11624867
申请日：2007-01-19
申请人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Walter Schwarzenbach , Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

8. 发明申请

US20060040470A1 Methods for minimizing defects when transferring a semiconductor useful layer 审中-公开
标题翻译：传输半导体有用层时最小化缺陷的方法
公开(公告)号：US20060040470A1
公开(公告)日：2006-02-23
申请号：US11020057
申请日：2004-12-21
申请人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
发明人： Nadia Ben Mohamed , Christophe Maleville , Corinne Maunand Tussot
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method for minimizing defects when transferring a useful layer from a donor wafer to a receptor wafer is described. The method includes providing a donor wafer having a surface below which a zone of weakness is present to define a useful layer to be transferred, molecularly bonding at a bonding interface the surface of the useful layer of the donor wafer to a surface of the receptor wafer to form a structure, heating the structure at a first temperature that is substantially higher than ambient temperature for a first time period sufficient to liberate water molecules from the bonding interface, with the heating being insufficient to cause detachment of the useful layer at the zone of weakness, and detaching the useful layer from the donor wafer.
摘要翻译：描述了当将有用层从施主晶片转移到受体晶片时最小化缺陷的方法。该方法包括提供具有表面的施主晶片，在该表面之下存在弱化区以限定待转移的有用层，在施主晶片的有用层的表面的接合界面处分子结合到受体晶片的表面以形成结构，在基本上高于环境温度的第一温度下将结构加热足以从结合界面释放水分子的第一时间段，其中加热不足以引起有用层在区域无力，并从供体晶片上分离有用层。

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