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1. 发明申请

US20090120582A1 SHOWER PLATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：淋浴板和底板加工设备
公开(公告)号：US20090120582A1
公开(公告)日：2009-05-14
申请号：US12266800
申请日：2008-11-07
申请人： Chishio Koshimizu , Kazuki Denpoh , Hiromasa Mochiki
发明人： Chishio Koshimizu , Kazuki Denpoh , Hiromasa Mochiki
IPC分类号： H01L21/3065
CPC分类号： H01J37/3244 , H01J37/32449
摘要： A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.
摘要翻译：处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

2. 发明授权

US09136097B2 Shower plate and substrate processing apparatus 有权
标题翻译：淋浴板和基材加工设备
公开(公告)号：US09136097B2
公开(公告)日：2015-09-15
申请号：US12266800
申请日：2008-11-07
申请人： Chishio Koshimizu , Kazuki Denpoh , Hiromasa Mochiki
发明人： Chishio Koshimizu , Kazuki Denpoh , Hiromasa Mochiki
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/3244 , H01J37/32449
摘要： A shower plate of a processing gas supply unit disposed in a processing chamber of a substrate processing apparatus to supply a processing gas into a processing space in the processing chamber. The shower plate is interposed between a processing gas introduction space formed in the processing gas supply unit for introduction of the processing gas and the processing space. The shower plate includes processing gas supply passageways which allow the processing gas introduction space to communicate with the processing space. The processing gas supply passageways include gas holes formed toward the processing gas introduction space and gas grooves formed toward the processing space, the gas holes and gas grooves communicating with each other. A total flow path cross sectional area of all the gas grooves is larger than a total flow path cross sectional area of all the gas holes.
摘要翻译：处理气体供给单元的喷淋板，设置在基板处理装置的处理室中，以将处理气体供给到处理室中的处理空间。喷淋板介于形成在处理气体供给单元中的处理气体导入空间，用于引入处理气体和处理空间。淋浴板包括处理气体供给通道，其允许处理气体引入空间与处理空间通信。处理气体供给通路包括朝向处理气体导入空间形成的气孔和朝向处理空间形成的气体槽，气体孔和气体槽相互连通。所有气体槽的总流路横截面面积大于所有气孔的总流路横截面面积。

3. 发明授权

US09313872B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09313872B2
公开(公告)日：2016-04-12
申请号：US12913441
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
发明人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
IPC分类号： C23C16/00 , H01L21/306 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

4. 发明授权

US09253867B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US09253867B2
公开(公告)日：2016-02-02
申请号：US12913183
申请日：2010-10-27
申请人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
发明人： Yohei Yamazawa , Masashi Saito , Kazuki Denpoh , Chishio Koshimizu , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00 , H05H1/46 , H01J37/32
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
摘要： A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的可抽空处理室; 基板支撑单元，设置在处理室中，用于在其上安装目标基板; 处理气体供给单元，用于向所述处理室供给期望的处理气体，以在所述目标基板上进行等离子体处理; 设置在电介质窗口上的第一RF天线，用于通过处理室中的感应耦合产生等离子体; 以及用于向第一RF天线提供RF功率的第一RF电源单元。第一RF天线包括设置在电介质窗口上或电介质窗上方的电连接到第一RF电源单元的初级线圈; 以及次级线圈，其被设置成使得线圈通过其间的电磁感应彼此耦合，同时布置成比初级线圈更靠近电介质窗口的底表面。

5. 发明授权

US08741097B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08741097B2
公开(公告)日：2014-06-03
申请号：US12913162
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32146 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 设置在所述处理室中的基板支撑单元; 处理气体供应单元; RF电源单元，用于向RF天线提供RF功率以通过处理室中的感应耦合产生处理气体的等离子体，所述RF功率具有用于处理气体的RF放电的适当频率; 校正线圈，设置在所述处理室外侧的位置处，所述校正线圈将通过电磁感应与所述RF天线耦合，用于控制所述处理室中的所述衬底上的等离子体密度分布; 设置在所述校正线圈的环路中的开关装置; 以及用于通过脉冲宽度调制以期望的占空比开关控制开关装置的开关控制单元。

6. 发明授权

US08608903B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08608903B2
公开(公告)日：2013-12-17
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译：一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

7. 发明申请

US20110104902A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110104902A1
公开(公告)日：2011-05-05
申请号：US12913441
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
发明人： Yohei Yamazawa , Chishio Koshimizu , Kazuki Denpoh , Jun Yamawaku , Masashi Saito
IPC分类号： H01L21/3065 , C23C16/505 , H01L21/30 , C23C14/34
CPC分类号： H01J37/3211 , C23C16/455 , C23C16/50 , H01J37/321 , H01J37/3244 , H05H1/46
摘要： A plasma processing apparatus includes a processing chamber including a dielectric window; a coil shaped RF antenna provided outside the dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate to be processed; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a desired plasma process on the target substrate; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber. The apparatus further includes a floating coil electrically floated and arranged at a position outside the processing chamber where the floating coil is to be coupled with the RF antenna by an electromagnetic induction; and a capacitor provided in a loop of the floating coil.
摘要翻译：一种等离子体处理装置，包括：具有电介质窗的处理室; 设置在电介质窗外部的线圈形RF天线; 基板支撑单元，设置在处理室中，用于在其上安装待处理的目标基板; 处理气体供应单元，用于将所需的处理气体供应到处理室以对目标基板执行所需的等离子体处理; 以及RF电源单元，用于向RF天线提供RF功率，以通过处理室中的感应耦合产生处理气体的等离子体。该装置还包括一个浮动线圈，其浮动并布置在处理室外部的位置处，浮动线圈将通过电磁感应与RF天线耦合; 以及设置在浮动线圈的环路中的电容器。

8. 发明申请

US20110000883A1 PLASMA PROCESSING APPARATUS, FOCUS RING, AND SUSCEPTOR 有权
标题翻译：等离子体加工设备，聚焦环和SUSCEPTOR
公开(公告)号：US20110000883A1
公开(公告)日：2011-01-06
申请号：US12850391
申请日：2010-08-04
申请人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
发明人： Shosuke Endoh , Noriyuki Iwabuchi , Shigeaki Kato , Tomoya Okubo , Jun Hirose , Koichi Nagakura , Chishio Koshimizu , Kazuki Denpoh
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32642 , H01L21/6831
摘要： A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck and the focus ring. A wafer W to be subjected to plasma processing is mounted on the electrostatic chuck. The focus ring has a dielectric material portion and a conductive material portion. The dielectric material portion forms a contact portion disposed in contact with the electrostatic chuck. The conductive material portion faces the electrostatic chuck with the dielectric material portion therebetween.
摘要翻译：具有聚焦环的等离子体处理装置能够大大提高聚焦环的冷却效率，同时防止其成本增加。等离子体处理装置由具有静电卡盘和聚焦环的基座构成。将要进行等离子体处理的晶片W安装在静电卡盘上。聚焦环具有电介质材料部分和导电材料部分。介电材料部分形成与静电卡盘接触设置的接触部分。导电材料部分面对电介质材料部分的静电卡盘。

9. 发明申请

US20110094995A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20110094995A1
公开(公告)日：2011-04-28
申请号：US12913135
申请日：2010-10-27
申请人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
发明人： Yohei Yamazawa , Chishio Koshimizu , Masashi Saito , Kazuki Denpoh , Jun Yamawaku , Hachishiro Iizuka
IPC分类号： C23F1/08 , C23C16/455 , C23C16/458 , C23C16/505 , C23F1/00
CPC分类号： H01J37/321 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： A plasma processing apparatus includes: a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit, provided in the chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a processing gas to the chamber; and an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the chamber. The apparatus further includes a correction coil, provided at a position outside the chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution in the chamber; and an antenna-coil distance control unit for controlling a distance between the RF antenna and the correction coil while supporting the correction coil substantially in parallel with the RF antenna.
摘要翻译：一种等离子体处理装置，包括：包括电介质窗的处理室; 设置在电介质窗外部的线圈状RF天线; 基板支撑单元，设置在所述室中，用于在其上安装目标基板; 处理气体供应单元，用于将处理气体供应到所述室; 以及RF电源单元，用于向RF天线提供RF功率，以通过腔室中的感应耦合产生处理气体的等离子体。该装置还包括校正线圈，其设置在室外的位置处，其中校正线圈将通过电磁感应与RF天线耦合，用于控制腔室中的等离子体密度分布; 以及天线线圈距离控制单元，用于在支撑基本上与RF天线并联的校正线圈的同时控制RF天线和校正线圈之间的距离。

10. 发明申请

US20100012274A1 FOCUS RING, SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS HAVING SAME 审中-公开
标题翻译：聚焦环，基板安装台和等离子体加工设备
公开(公告)号：US20100012274A1
公开(公告)日：2010-01-21
申请号：US12504043
申请日：2009-07-16
申请人： Masaaki Miyagawa , Katsuhiko Ono , Chishio Koshimizu , Kazuki Denpoh , Tatsuo Matsudo , Yasuhiro Hamada
发明人： Masaaki Miyagawa , Katsuhiko Ono , Chishio Koshimizu , Kazuki Denpoh , Tatsuo Matsudo , Yasuhiro Hamada
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32623 , H01L21/67069 , H01L21/67103 , H01L21/68735
摘要： A focus ring is placed on a substrate mounting table for mounting a target substrate thereon to surround the target substrate. The focus ring converges plasma on the target substrate when the target substrate is subjected to plasma processing. The focus ring is configured to create a temperature difference in its radial direction and over its full circumference during the plasma-processing of the target substrate. The focus ring also includes a radial outer region as a higher temperature region and a radial inner region as a lower temperature region. A groove is formed between the radial outer region and the radial inner region to extend over the full circumference of the focus ring.
摘要翻译：将聚焦环放置在基板安装台上，用于在其上安装目标基板以围绕目标基板。当目标衬底进行等离子体处理时，聚焦环会将等离子体收敛在目标衬底上。聚焦环被配置成在靶基质的等离子体处理期间在其径向方向和其整个圆周上产生温度差。聚焦环还包括作为较高温度区域的径向外部区域和作为较低温度区域的径向内部区域。在径向外部区域和径向内部区域之间形成凹槽以在聚焦环的整个圆周上延伸。

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