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1. 发明申请

US20090242127A1 PLASMA ETCHING APPARATUS AND METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻装置和方法以及计算机可读存储介质
公开(公告)号：US20090242127A1
公开(公告)日：2009-10-01
申请号：US12411001
申请日：2009-03-25
申请人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
发明人： Chishio KOSHIMIZU , Manabu IWATA , Masanobu HONDA , Hiroyuki NAKAYAMA
IPC分类号： H01L21/306
CPC分类号： H01L21/31138 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01J37/32697
摘要： A plasma etching apparatus includes a processing vessel; a lower electrode on which a target substrate is mounted in the processing vessel; an upper electrode disposed in the processing vessel to face the lower electrode in parallel; a processing gas supply unit configured to supply a processing gas into a processing space between the upper and the lower electrode; a first radio frequency power supply unit configured to apply, to the lower electrode, a first radio frequency power for generating plasma of the processing gas; a focus ring covering a top surface peripheral portion of the lower electrode protruding toward a radial outside of the substrate; a DC power supply configured to output a variable DC voltage; and a DC voltage supply network that connects the DC power supply to either one of the focus ring and the upper electrode or both depending on processing conditions of plasma etching.
摘要翻译：等离子体蚀刻装置包括处理容器; 将目标基板安装在处理容器中的下电极; 设置在所述处理容器中以与所述下电极平行地面对的上电极; 处理气体供给单元，被配置为将处理气体供应到上部和下部电极之间的处理空间; 第一射频电源单元，被配置为向下部电极施加用于产生处理气体的等离子体的第一射频功率; 覆盖所述下电极的顶表面周边部分的朝向所述基板的径向外侧突出的聚焦环; DC电源，被配置为输出可变DC电压; 以及根据等离子体蚀刻的处理条件将直流电源连接到焦点环和上部电极中的任一个或两者的直流电压供给网络。

2. 发明申请

US20090206058A1 PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM 有权
标题翻译：等离子体处理设备和方法以及存储介质
公开(公告)号：US20090206058A1
公开(公告)日：2009-08-20
申请号：US12372156
申请日：2009-02-17
申请人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
发明人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
IPC分类号： H01L21/306
CPC分类号： H01J37/32027 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要翻译：等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一随着施加到外部电极的DC电压的增加，高频功率增加。

3. 发明申请

US20090101283A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090101283A1
公开(公告)日：2009-04-23
申请号：US12253480
申请日：2008-10-17
申请人： Manabu IWATA
发明人： Manabu IWATA
IPC分类号： C23F1/08
CPC分类号： H01L21/67069 , H01J37/32027 , H01J37/32082 , H01J37/32091 , H01J37/32174 , H01J37/32183 , H03H7/38 , H03H7/40
摘要： In a plasma etching apparatus, a first high frequency for plasma generation and a second high frequency for ion attraction are respectively applied from two high frequency supplies to a susceptor. Further, DC voltage is applied from a variable DC power supply to an upper electrode via a filter circuit. An annular DC ground part attached to an upper side surface of the susceptor is connected to a filter circuit. This filter circuit allows a specific frequency component of the intermodulation distortion generated in a plasma by a series resonant to selectively flow to a ground line.
摘要翻译：在等离子体蚀刻装置中，分别从两个高频电源向基座施加等离子体产生用的第一高频和离子吸引用的第二高频。此外，通过滤波电路将直流电压从可变直流电源施加到上电极。附接到基座的上侧表面的环形DC接地部分连接到滤波器电路。该滤波器电路允许通过串联谐振产生在等离子体中的互调失真的特定频率分量选择性地流向接地线。

4. 发明申请

US20100176086A1 PLASMA PROCESSING APPARATUS AND METHOD OF CONTROLLING DISTRIBUTION OF A PLASMA THEREIN 有权
标题翻译：等离子体处理装置和控制等离子体分布的方法
公开(公告)号：US20100176086A1
公开(公告)日：2010-07-15
申请号：US12686630
申请日：2010-01-13
申请人： Manabu IWATA
发明人： Manabu IWATA
IPC分类号： H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091 , H01J37/32577 , H01J37/32642
摘要： A plasma processing apparatus performing a plasma processing to a substrate includes a processing vessel having a vacuum exhaustible processing chamber; a mounting table serving as a lower electrode for mounting thereon the substrate in the processing chamber; a circular ring member arranged to surround a periphery of the substrate whose radial one end portion is supported by the mounting table; an upper electrode arranged above the lower electrode to face same; and a power feed for supplying the mounting table with a high frequency power. The plasma processing apparatus further includes a first intermediate electrical conductor supporting a middle portion of the circular ring member; and a first movable electrical conductor which is selectively electrically connected or disconnected to the power feed; and a second intermediate electrical conductor supporting a radial opposite end portion of the circular ring member.
摘要翻译：对基板进行等离子体处理的等离子体处理装置包括具有真空可消耗处理室的处理容器; 用作下电极的安装台，用于将基板安装在处理室中; 环形构件，被布置成围绕所述基板的周边，其径向一端部由所述安装台支撑; 上电极，其布置在所述下电极的上方以面对其; 以及用于向安装台提供高频功率的供电。等离子体处理装置还包括支撑圆环构件的中间部分的第一中间电导体; 以及第一可移动电导体，其被选择性地电连接或断开到所述电力馈送; 以及支撑所述圆环构件的径向相对端部的第二中间电导体。

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