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1. 发明授权

US08440050B2 Plasma processing apparatus and method, and storage medium 有权
标题翻译：等离子体处理装置和方法以及存储介质
公开(公告)号：US08440050B2
公开(公告)日：2013-05-14
申请号：US12372156
申请日：2009-02-17
申请人： Manabu Iwata , Hiroyuki Nakayama , Kenji Masuzawa , Masanobu Honda
发明人： Manabu Iwata , Hiroyuki Nakayama , Kenji Masuzawa , Masanobu Honda
IPC分类号： C23F1/00 , H01L21/306 , G06F19/00
CPC分类号： H01J37/32027 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要翻译：等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一随着施加到外部电极的DC电压的增加，高频功率增加。

2. 发明申请

US20120281334A1 ELECTROSTATIC CHUCK APPARATUS 有权
标题翻译：静电卡装置
公开(公告)号：US20120281334A1
公开(公告)日：2012-11-08
申请号：US13513380
申请日：2010-12-08
申请人： Yasuharu Sasaki , Kenji Masuzawa , Toshiyuki Makabe , Mamoru Kosakai , Takashi Satou , Kazunori Ishimura , Ryuuji Hayahara , Hitoshi Kouno
发明人： Yasuharu Sasaki , Kenji Masuzawa , Toshiyuki Makabe , Mamoru Kosakai , Takashi Satou , Kazunori Ishimura , Ryuuji Hayahara , Hitoshi Kouno
IPC分类号： H02N13/00
CPC分类号： H01L21/6831 , H01J37/32642 , H01J2237/332 , H01J2237/338 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248
摘要： Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.
摘要翻译：公开了一种静电卡盘装置，其包括：静电卡盘部; 设置成围绕静电吸盘部分的环形聚焦环部分; 以及冷却静电吸盘部和聚焦环部的冷却基部。聚焦环部分设置有环形聚焦环，环形导热片，环形陶瓷环，非磁性加热器和向加热器供电的电极部分。

3. 发明授权

US08981263B2 Electrostatic chuck apparatus 有权
标题翻译：静电吸盘装置
公开(公告)号：US08981263B2
公开(公告)日：2015-03-17
申请号：US13513380
申请日：2010-12-08
申请人： Yasuharu Sasaki , Kenji Masuzawa , Toshiyuki Makabe , Mamoru Kosakai , Takashi Satou , Kazunori Ishimura , Ryuuji Hayahara , Hitoshi Kouno
发明人： Yasuharu Sasaki , Kenji Masuzawa , Toshiyuki Makabe , Mamoru Kosakai , Takashi Satou , Kazunori Ishimura , Ryuuji Hayahara , Hitoshi Kouno
IPC分类号： H05B3/68 , C23C16/00 , H01L21/683 , H01L21/67
CPC分类号： H01L21/6831 , H01J37/32642 , H01J2237/332 , H01J2237/338 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248
摘要： Disclosed is an electrostatic chuck apparatus which is configured of: an electrostatic chuck section; an annular focus ring section provided to surround the electrostatic chuck section; and a cooling base section which cools the electrostatic chuck section and the focus ring section. The focus ring section is provided with an annular focus ring, an annular heat conducting sheet, an annular ceramic ring, a nonmagnetic heater, and an electrode section that supplies power to the heater.
摘要翻译：公开了一种静电卡盘装置，其包括：静电卡盘部; 设置成围绕静电吸盘部分的环形聚焦环部分; 以及冷却静电吸盘部和聚焦环部的冷却基部。聚焦环部分设置有环形聚焦环，环形导热片，环形陶瓷环，非磁性加热器和向加热器供电的电极部分。

4. 发明授权

US08303834B2 Plasma processing apparatus and plasma etching method 有权
标题翻译：等离子体处理装置和等离子体蚀刻方法
公开(公告)号：US08303834B2
公开(公告)日：2012-11-06
申请号：US12411953
申请日：2009-03-26
申请人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
发明人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32027 , H01J37/32091
摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.
摘要翻译：一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离处理室和处理气体供应单元，用于将处理气体供应到内外电极和下电极之间的处理空间中。射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

5. 发明申请

US20090242515A1 PLASMA PROCESSING APPARATUS AND PLASMA ETCHING METHOD 有权
标题翻译：等离子体处理装置和等离子体蚀刻方法
公开(公告)号：US20090242515A1
公开(公告)日：2009-10-01
申请号：US12411953
申请日：2009-03-26
申请人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
发明人： Masanobu Honda , Kenji Masuzawa , Hiroyuki Nakayama , Manabu Iwata , Manabu Sato , Kazuki Narishige
IPC分类号： B44C1/22 , C23F1/02
CPC分类号： H01J37/32027 , H01J37/32091
摘要： A plasma processing apparatus includes an inner upper electrode provided to face a lower electrode mounting thereon a substrate, an outer upper electrode provided in a ring shape at a radially outside of the inner upper electrode and electrically isolated from the inner upper electrode in a vacuum evacuable processing chamber and a processing gas supply unit for supplying a processing gas into a processing space between the inner and the outer upper electrode and the lower electrode. A radio frequency (RF) power supply unit is also provide to apply a RF power to the lower electrode or the inner and the outer upper electrode to generate a plasma of the processing gas by RF discharge. A first and a second DC power supply unit are provided to apply a first and a second variable DC voltage to the inner upper electrode, respectively.
摘要翻译：一种等离子体处理装置，包括：内部上部电极，其设置在其上安装有基板的下部电极;外部上部电极，其在所述内部上部电极的径向外侧设置成环状，并且在真空抽真空中与所述内部上部电极电隔离处理室和处理气体供应单元，用于将处理气体供应到内外部上电极和下电极之间的处理空间中。射频（RF）电源单元还提供向下电极或内外电极施加RF功率以通过RF放电产生处理气体的等离子体。提供第一和第二直流电源单元，以分别向内部上部电极施加第一和第二可变直流电压。

6. 发明申请

US20090242133A1 ELECTRODE STRUCTURE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：电极结构和基板加工设备
公开(公告)号：US20090242133A1
公开(公告)日：2009-10-01
申请号：US12407109
申请日：2009-03-19
申请人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
发明人： Hiroyuki Nakayama , Masanobu Honda , Kenji Masuzawa , Manabu Iwata
IPC分类号： C23F1/08
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32541
摘要： An electrode structure capable of adequately increasing an electron density in a processing space at a part facing a circumferential edge portion of a substrate. In a processing chamber of a substrate processing apparatus that performs RIE processing on a wafer, an upper electrode of the electrode structure is disposed to face the wafer placed on a susceptor inside the processing chamber. The upper electrode includes an inner electrode facing a central portion of the wafer and an outer electrode facing the circumferential edge portion of the wafer. The inner and outer electrodes are connected with first and second DC power sources, respectively. The outer electrode has its first secondary electron emission surface extending parallel to the wafer and its second secondary electron emission surface obliquely extending relative to the first secondary electron emission surface.
摘要翻译：一种电极结构，其能够在面向基板的周缘部的部分处适当地增加处理空间中的电子密度。在对晶片进行RIE处理的基板处理装置的处理室中，设置电极结构体的上部电极，使其位于处理室内的基座上。上电极包括面对晶片的中心部分的内电极和面对晶片周缘部分的外电极。内电极和外电极分别与第一和第二直流电源连接。外部电极具有平行于晶片延伸的第一二次电子发射表面及其相对于第一二次电子发射表面倾斜延伸的第二二次电子发射表面。

7. 发明申请

US20090206058A1 PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM 有权
标题翻译：等离子体处理设备和方法以及存储介质
公开(公告)号：US20090206058A1
公开(公告)日：2009-08-20
申请号：US12372156
申请日：2009-02-17
申请人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
发明人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
IPC分类号： H01L21/306
CPC分类号： H01J37/32027 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要翻译：等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一随着施加到外部电极的DC电压的增加，高频功率增加。

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