专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090206058A1 PLASMA PROCESSING APPARATUS AND METHOD, AND STORAGE MEDIUM 有权
标题翻译：等离子体处理设备和方法以及存储介质
公开(公告)号：US20090206058A1
公开(公告)日：2009-08-20
申请号：US12372156
申请日：2009-02-17
申请人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
发明人： Manabu IWATA , Hiroyuki NAKAYAMA , Kenji MASUZAWA , Masanobu HONDA
IPC分类号： H01L21/306
CPC分类号： H01J37/32027 , H01J37/32091 , H01J37/32165
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber, a first electrode divided into an outer electrode and an inner electrode, a second electrode, a first and a second high frequency power application unit for applying to the second electrode a first and a second high frequency power having a relatively high frequency and a relatively low frequency, respectively, a first and a second DC voltage application circuit apply a DC voltage to the outer and the inner electrode, respectively, and a processing gas supply unit. A space between the first electrode and the second electrode serves as a plasma generation space, and frequency-impedance characteristics of the outer electrode are set such that the impedance increases at the frequency of the second high frequency power and decreases at the frequency of the first high frequency power as the DC voltage applied to the outer electrode increases.
摘要翻译：等离子体处理装置包括真空排气处理室，分为外部电极和内部电极的第一电极，第二电极，第一和第二高频电力施加单元，用于向第二电极施加第一和第二高电平第一和第二直流电压施加电路分别对外电极和内电极分别施加直流电压和处理气体供给单元。第一电极和第二电极之间的空间用作等离子体产生空间，外部电极的频率阻抗特性被设定为使得阻抗在第二高频功率的频率下增加，并且在第一随着施加到外部电极的DC电压的增加，高频功率增加。

IPRDB

热门服务

关于我们

友情链接

联系方式