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1. 发明授权

US07795601B2 Method and apparatus to improve lithography throughput 有权
标题翻译：提高光刻产量的方法和装置
公开(公告)号：US07795601B2
公开(公告)日：2010-09-14
申请号：US11421590
申请日：2006-06-01
申请人： Chin-Hsiang Lin , Jui-Chung Peng , Yung-Cheng Chen , Shy-Jay Lin
发明人： Chin-Hsiang Lin , Jui-Chung Peng , Yung-Cheng Chen , Shy-Jay Lin
IPC分类号： C12Q1/68 , H01J40/00
CPC分类号： G03F7/70991 , G03F7/70466
摘要： The present disclosure provides a lithography apparatus with improved lithography throughput. The lithography apparatus includes a first lens system; a first substrate stage configured to receive a first radiation energy from the first lens system, and designed operable to move a substrate during an exposing process; a second lens system, having a higher resolution than that of the first lens system; and a second substrate stage approximate to the first substrate stage and configured to receive a second radiation energy from the second lens system, and designed operable to receive the substrate from the first substrate stage and move the substrate.
摘要翻译：本公开提供了具有改进的光刻产量的光刻设备。光刻设备包括第一透镜系统; 第一衬底台，被配置为从所述第一透镜系统接收第一辐射能量，并且被设计为可操作以在曝光过程期间移动衬底; 第二透镜系统，具有比第一透镜系统更高的分辨率; 以及第二衬底台，其近似于所述第一衬底台并且被配置为从所述第二透镜系统接收第二辐射能量，并且被设计为可操作以从所述第一衬底台接收所述衬底并移动所述衬底。

2. 发明授权

US08068208B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08068208B2
公开(公告)日：2011-11-29
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/68 , G03B27/42 , G03B27/58 , G03B27/60 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

3. 发明授权

US08199314B2 System and method for improving immersion scanner overlay performance 有权
标题翻译：提高浸没式扫描仪覆盖性能的系统和方法
公开(公告)号：US08199314B2
公开(公告)日：2012-06-12
申请号：US13288133
申请日：2011-11-03
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52 , G03B27/58 , G03B27/60 , G03B27/68 , G03B27/42 , G03B27/32
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner including a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method includes providing a water tank that connects to at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没扫描仪的覆盖性能的方法，该扫描仪包括设置在其中的水通道中的具有透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供连接到晶片台输入和晶片台输出中的至少一个的水箱; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

4. 发明申请

US20080129969A1 System and Method For Improving Immersion Scanner Overlay Performance 有权
标题翻译：提高浸入式扫描仪覆盖性能的系统和方法
公开(公告)号：US20080129969A1
公开(公告)日：2008-06-05
申请号：US11677949
申请日：2007-02-22
申请人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
发明人： Jui-Chung Peng , Tzung-Chi Fu , Chin-Hsiang Lin , Chien-Hsun Lin , Chun-Hung Lin , Yao-Wen Guo , Shy-Jay Lin , Heng-Hsin Liu
IPC分类号： G03B27/52
CPC分类号： G03F7/70875 , G03F7/70341 , G03F7/70783
摘要： System and method for improving immersion scanner overlay performance are described. One embodiment is a method of improving overlay performance of an photolithography immersion scanner comprising a wafer table having lens cooling water (“LCW”) disposed in a water channel therein, the wafer table having an input for receiving the LCW into the water channel and an output for expelling the LCW from the water channel. The method comprises providing a water tank at least one of the wafer table input and the wafer table output; monitoring a pressure of water in the water tank; and maintaining the pressure of the water in the water tank at a predetermined level.
摘要翻译：描述了用于提高浸没式扫描仪覆盖性能的系统和方法。一个实施例是一种提高光刻浸没式扫描仪的覆盖性能的方法，其包括设置在其中的水通道中的透镜冷却水（“LCW”）的晶片台，晶片台具有用于将LCW接收到水通道中的输入端，输出用于从水道排出LCW。该方法包括：提供一个水箱至少一个晶片台输入和晶片台输出; 监测水箱内的水压; 并且将水箱中的水的压力保持在预定水平。

5. 发明授权

US07796249B2 Mask haze early detection 有权
标题翻译：面罩雾霭早期检测
公开(公告)号：US07796249B2
公开(公告)日：2010-09-14
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

6. 发明申请

US20090063074A1 Mask Haze Early Detection 有权
标题翻译：面具阴霾早期检测
公开(公告)号：US20090063074A1
公开(公告)日：2009-03-05
申请号：US11866514
申请日：2007-10-03
申请人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
发明人： Wen-Chuan Wang , Shy-Jay Lin , Te-Chih Huang , Chih-Ming Ke , Wei-Yu Su , Heng-Hsin Liu , Tsai-Sheng Gau , Chin-Hsiang Lin
IPC分类号： G06F19/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/82
摘要： Detecting haze formation on a mask by obtaining an optical property of the mask and determining progress of the haze formation based on the obtained optical property.
摘要翻译：通过获得掩模的光学特性并基于获得的光学性质来确定雾度形成的进展来检测掩模上的雾度形成。

7. 发明授权

US06428938B1 Phase-shift mask for printing high-resolution images and a method of fabrication 有权
标题翻译：用于打印高分辨率图像的相移掩模和制造方法
公开(公告)号：US06428938B1
公开(公告)日：2002-08-06
申请号：US09596900
申请日：2000-06-19
申请人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
发明人： Chin-Hsiang Lin , Shy-Jay Lin , Sheng-Chi Chin , Wei-Zen Chou
IPC分类号： G03F900
CPC分类号： G03F1/30
摘要： An improved phase-shift photomask and method of fabrication are described. The method for making this phase-shift mask involves depositing an opaque film, such as chromium (Cr), on a transparent plate, such as SiO2 (quartz plate). An electron beam photoresist layer is deposited on the Cr film and is partially exposed in regions A and completely exposed in closely spaced alternate regions B by an electron beam. The exposed photoresist is then developed. The Cr film is etched in regions B while the remaining resist in regions A protect the Cr from etching. The e-bean resist is plasma etched back to remove the resist over regions A and then the quartz plate in regions B is recessed to a depth d by plasma etching while the Cr protects the quartz in regions A from etching. The recess is etched to a depth to provide an optical path difference between A and B of ½ wavelength (180°) when UV light is transmitted through the mask to expose resist on a product substrate. This 180° phase-shift minimizes the diffracted light under the Cr film between regions A and B and improves the DOF and therefore the photoresist resolution. Since a single e-beam resist is used to make the mask it is more manufacturing cost effective with improved alignment accuracy between regions A and B.
摘要翻译：描述了改进的相移光掩模和制造方法。制造该相移掩模的方法包括在诸如SiO 2（石英板）的透明板上沉积不透明的膜，例如铬（Cr）。电子束光致抗蚀剂层沉积在Cr膜上，并部分暴露在区域A中，并通过电子束完全暴露在紧密间隔的交替区域B中。然后曝光的光刻胶显影。在区域B中蚀刻Cr膜，而区域A中的剩余抗蚀剂保护Cr不被蚀刻。等离子体蚀刻回蚀刻e-bean抗蚀剂以去除区域A上的抗蚀剂，然后通过等离子体蚀刻将区域B中的石英板凹入深度d，同时Cr保护区域A中的石英免受蚀刻。当UV光通过掩模透射以暴露产品基底上的抗蚀剂时，凹陷被蚀刻到深度以提供½波长（180°）的A和B之间的光程差。这种180°相移使区域A和B之间的Cr膜下的衍射光最小化，并且改善了DOF并因此改善了光刻胶分辨率。由于使用单个电子束抗蚀剂来制造掩模，因此在区域A和区域B之间具有改善的对准精度是更具制造成本效益的。

8. 发明申请

US20120181669A1 FRAME CELL FOR SHOT LAYOUT FLEXIBILITY 有权
标题翻译：用于拍摄布局灵活性的框架单元
公开(公告)号：US20120181669A1
公开(公告)日：2012-07-19
申请号：US13409517
申请日：2012-03-01
申请人： Chin-Ming LIN , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
发明人： Chin-Ming LIN , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
IPC分类号： H01L23/544 , G06F17/50
CPC分类号： G03F7/70433
摘要： A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout.
摘要翻译：一种方法包括建立初始照片布局，其中多个照片布置在垂直排列的列和水平排列的行中以覆盖半导体晶片。一排照片或一列照片中的至少一列相对于相邻的行或列发射位移，以建立与至少一个移位行中的拍摄中的初始镜头布局不同的至少一个附加镜头布局，或一列照片不与在初始镜头布局中对齐的相邻行或照片列中的镜头对齐。选择初始镜头布局和至少一个附加镜头布局之一作为最终镜头布局。使用最终镜头布局将晶片曝光。

9. 发明申请

US20080241760A1 PEB EMBEDDED EXPOSURE APPARATUS 有权
标题翻译： PEB嵌入式曝光装置
公开(公告)号：US20080241760A1
公开(公告)日：2008-10-02
申请号：US11740129
申请日：2007-04-25
申请人： Feng-Ning Lee , Yung-Cheng Chen , Yao-Hwan Kao , Li-Jen Ko , Chin-Hsiang Lin
发明人： Feng-Ning Lee , Yung-Cheng Chen , Yao-Hwan Kao , Li-Jen Ko , Chin-Hsiang Lin
IPC分类号： G03C5/00
CPC分类号： G03F7/70991 , H01L21/67225 , H01L21/67748
摘要： The present disclosure provides a lithography apparatus. The apparatus includes an exposure module designed for exposure processing; a baking module embedded in the exposure module and designed for post exposure baking (PEB); and a control module designed to control the exposure module and the baking module.
摘要翻译：本公开提供一种光刻设备。该装置包括设计用于曝光处理的曝光模块; 嵌入曝光模块中的烘烤模块，用于后曝光烘烤（PEB）; 以及设计用于控制曝光模块和烘焙模块的控制模块。

10. 发明授权

US08843860B2 Frame cell for shot layout flexibility 有权
标题翻译：帧单元，用于拍摄布局灵活性
公开(公告)号：US08843860B2
公开(公告)日：2014-09-23
申请号：US13409517
申请日：2012-03-01
申请人： Chin-Ming Lin , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
发明人： Chin-Ming Lin , Chia-hung Huang , Chi-Ming Yang , Chin-Hsiang Lin , Yung-Cheng Chen , Chih-Wei Lin
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G03F7/70433
摘要： A method includes establishing an initial shot layout in which a number of shots are arranged in vertically aligned columns and horizontally aligned rows to cover a semiconductor wafer. At least one of a row of shots or a column of shots is shifted relative to an adjacent row or column of shots to establish at least one additional shot layout that differs from the initial shot layout in that shots in the at least one shifted row or column of shots are not aligned with the shots in the adjacent row or column of shots with which they were aligned in the initial shot layout. One of the initial shot layout and the at least one additional shot layout is selected as a final shot layout. The wafer is exposed to light using the final shot layout.
摘要翻译：一种方法包括建立初始照片布局，其中多个照片布置在垂直排列的列和水平排列的行中以覆盖半导体晶片。一排照片或一列照片中的至少一列相对于相邻的行或列发射位移，以建立与至少一个移位行中的拍摄中的初始镜头布局不同的至少一个附加镜头布局，或一列照片不与在初始镜头布局中对齐的相邻行或照片列中的镜头对齐。选择初始镜头布局和至少一个附加镜头布局之一作为最终镜头布局。使用最终镜头布局将晶片曝光。

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