专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06569524B2 High thermal conductivity composite material, and method for producing the same 失效
公开(公告)号：US06569524B2
公开(公告)日：2003-05-27
申请号：US09886617
申请日：2001-06-22
申请人： Chihiro Kawai , Hirohiko Nakata
发明人： Chihiro Kawai , Hirohiko Nakata
IPC分类号： D02G300
CPC分类号： H01L23/3733 , B22F2998/00 , C22C32/00 , H01L24/48 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/85399 , H01L2924/00014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01079 , H01L2924/12042 , H01L2924/181 , Y10T428/2933 , Y10T428/2982 , C22C32/0052 , C22C32/0084 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a composite material having comparatively high thermal conductivity and a small coefficient of thermal expansion, which is low cost and preferable as a heatsink material. A graphite powder and an alloy powder, whose main constituent is Ag and Cu, and including Ti, etc., which is selected from the elements belonging to 4A, 5A and 6A groups, are blended together, and are heated at a higher temperature than the melting point of the alloy in a vacuum state or in a gas atmosphere of He, Ar or hydrogen. A coating layer of metal carbide such as TiC is formed on the surface of the graphite grains, and at the same time, they are transformed into a sintered body. The composite material thus obtained is such that the relative density thereof is 70% or more, thermal conductivity thereof is 220 W/m·K or more at room temperature, and the mean coefficient of thermal expansion from the room temperature to 200° C. is 5 through 15×10−6/°C. Therefore, the composite material is best suitable as heatsink members for semiconductors. In addition, carbide powder such as carbon fibers or SiC may be used instead of graphite powder.

2. 发明授权

US07491432B2 Ceramic susceptor for semiconductor manufacturing equipment 有权
标题翻译：陶瓷感受器用于半导体制造设备
公开(公告)号：US07491432B2
公开(公告)日：2009-02-17
申请号：US10605764
申请日：2003-10-24
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： B32B9/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68735 , H05B3/143 , Y10T428/131
摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).
摘要翻译：对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有由可以容纳地携带晶片的凹部构成的晶片槽（5）。晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面的口袋连接为0.1mm以上。此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。

3. 发明授权

US07361230B2 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译：在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面，与腔室接触，它由腔室支撑。因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。

4. 发明授权

US07268322B2 Semiconductor heating apparatus 失效
标题翻译：半导体加热装置
公开(公告)号：US07268322B2
公开(公告)日：2007-09-11
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67103
摘要： A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating apparatus includes a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译：一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，而另一个芯片在低温待机。半导体加热装置包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。多个加热部和支撑部接合在一起。多个加热部的工件安装面优选构成为同一平面。此外，优选地，分布在支撑部分下方的绝热材料。加热部件优选为陶瓷加热器。

5. 发明授权

US07268321B2 Wafer holder and semiconductor manufacturing apparatus 有权
标题翻译：晶圆支架和半导体制造装置
公开(公告)号：US07268321B2
公开(公告)日：2007-09-11
申请号：US10498460
申请日：2003-03-19
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Manabu Hashikura
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67103 , H01L21/67248
摘要： A wafer holder is provided in which local heat radiation in supporting and heating wafers is kept under control and temperature uniformity of the wafer retaining surface is enhanced, and by making use of the wafer holder a semiconductor manufacturing apparatus suitable for processing larger-diameter wafers is made available. In a wafer holder (1) including within a ceramic substrate (2) a resistive heating element (3) or the like and being furnished with a lead (4) penetrating a reaction chamber (6), the lead (4) is housed in a tubular guide member (5), and an interval between the guide member (5) and the reaction chamber (6) as well as the interior of the guide member (5) are hermetically sealed. The guide member (5) and the ceramic substrate (2) are not joined together, and in the interior of the guide member (5) in which the inside is hermetically sealed, the atmosphere toward the ceramic substrate (2) is preferably substantially the same as the atmosphere in the reaction chamber (6).
摘要翻译：提供了一种晶片保持器，其中支撑和加热晶片中的局部热辐射保持在控制之下，并且晶片保持表面的温度均匀性得到增强，并且通过利用晶片保持器，适于处理较大直径晶片的半导体制造装置为提供。在陶瓷基板（2）内具有电阻加热元件（3）等并配有穿过反应室（6）的引线（4）的晶片保持器（1）中，引线（4）容纳在管状引导构件（5）以及引导构件（5）和反应室（6）之间的间隔以及引导构件（5）的内部被气密地密封。引导构件（5）和陶瓷基板（2）不接合在一起，并且在内部被密封的引导构件（5）的内部，朝向陶瓷基板（2）的气氛优选为与反应室（6）中的气氛相同。

6. 发明申请

US20070205787A1 Wafer holder, and heater unit and wafer prober provided therewith 审中-公开
标题翻译：晶片支架，加热器单元和提供的晶圆探测器
公开(公告)号：US20070205787A1
公开(公告)日：2007-09-06
申请号：US11701416
申请日：2007-02-02
申请人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
发明人： Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Katsuhiro Itakura
IPC分类号： G01R31/02
CPC分类号： G01R31/2865 , G01R1/18 , G01R31/2875
摘要： A wafer holder with which probing can be performed with little or virtually no noise due to the wafer being shielded from electromagnetic waves; and a wafer prober on which the wafer holder is mounted. The wafer holder of the present invention includes a chuck top for mounting a wafer, and a resistance heat generator for heating the chuck top. At least part of the resistance heat generator is covered by an insulating layer, and an electrically conductive layer is present on an opposite side of the resistance heat generator having the insulating layer. The electrically conductive layer blocks electromagnetic waves that adversely affect inspection. The insulating layer preferably covers the entire surface of the resistance heat generator, and the electrically conductive layer preferably covers the entire surface of the resistance heat generator comprising the insulating layer.
摘要翻译：晶片保持器，由于晶片被电磁波屏蔽，可以进行很少或几乎没有噪声的探测; 以及安装晶片保持器的晶片探测器。本发明的晶片保持器包括用于安装晶片的卡盘顶板和用于加热卡盘顶部的电阻发热器。电阻发热体的至少一部分被绝缘层覆盖，导电层存在于具有绝缘层的电阻发热体的相反侧。导电层阻止对检查产生不利影响的电磁波。绝缘层优选覆盖电阻发热体的整个表面，并且导电层优选覆盖包括绝缘层的电阻发热体的整个表面。

7. 发明授权

US07211153B2 Ceramic joined body, substrate holding structure and substrate processing apparatus 有权
标题翻译：陶瓷接合体，基板保持结构和基板处理装置
公开(公告)号：US07211153B2
公开(公告)日：2007-05-01
申请号：US10276394
申请日：2002-04-11
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/6833 , B32B18/00 , B32B2309/022 , B32B2315/02 , C04B35/44 , C04B35/581 , C04B37/005 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3865 , C04B2235/96 , C04B2237/064 , C04B2237/08 , Y10T279/23
摘要： A substrate holding structure having excellent corrosion resistance and airtightness, excellent dimensional accuracy and sufficient durability when mechanical or thermal stress is applied thereto is obtained. A holder (1) serving as the substrate holding structure includes a ceramic base (2) for holding a substrate, a protective cylinder (7) joined to the ceramic base (2) and a joining layer (8) positioned therebetween for joining the ceramic base (2) and the protective cylinder (7) to each other. The joining layer (8) contains at least 2 mass % and not more than 70 mass % of a rare earth oxide, at least 10 mass % and not more than 78 mass % of aluminum oxide, and at least 2 mass % and not more than 50 mass % of aluminum nitride. The rare earth oxide or the aluminum oxide has the largest proportional content among the aforementioned three types of components in the joining layer (8).
摘要翻译：获得具有优异的耐腐蚀性和气密性的基板保持结构，在施加机械或热应力时具有优异的尺寸精度和足够的耐久性。用作基板保持结构的保持器（1）包括用于保持基板的陶瓷基体（2），与陶瓷基体（2）接合的保护筒（7）和位于其间的接合层（8），用于将陶瓷基座（2）和保护筒（7）彼此连接。接合层（8）含有2质量％以上且70质量％以下的稀土类氧化物，至少10质量％以上且78质量％以下的氧化铝，至少2质量％以上超过50质量％的氮化铝。在接合层（8）中，上述三种成分中的稀土氧化物或氧化铝的比例含量最大。

8. 发明申请

US20070028834A1 Wafer holder for wafer prober and wafer prober equipped with same 审中-公开
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20070028834A1
公开(公告)日：2007-02-08
申请号：US11496022
申请日：2006-07-31
申请人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Tomoyuki Awazu , Katsuhiro Itakura , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C30B25/00
CPC分类号： G01R31/2886 , G01R31/2831
摘要： The present invention provides a wafer prober wafer holder that is highly rigid and increases the heat insulating effect, thereby improving positional accuracy, thermal uniformity, and chip temperature ramp-up and cooling rates, as well as a wafer prober device equipped therewith. A wafer holder of the present invention includes a chuck top that mounts a wafer, and a support member that supports the chuck top. A cavity is formed between the chuck top and the support member, and a vacuum space member is provided to the lowest part of a member that is attached to a surface of the chuck top on the side opposite the wafer mounting surface.
摘要翻译：本发明提供了一种高刚性的晶片探针晶片保持器，并且增加了隔热效果，从而提高了位置精度，热均匀性和芯片温度升高和冷却速度，以及配备其的晶片探测器。本发明的晶片保持器包括安装晶片的卡盘顶部和支撑卡盘顶部的支撑构件。在卡盘顶部和支撑构件之间形成空腔，并且在与晶片安装表面相对的一侧附接到卡盘顶表面的构件的最下部设置真空空间构件。

9. 发明申请

US20050263516A1 Heating device 审中-公开
标题翻译：加热装置
公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译：本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。每个安装部分和支撑部分的杨氏模量为100GPa或更大。通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。

10. 发明授权

US06946625B2 Ceramic susceptor 失效
标题翻译：陶瓷感受器
公开(公告)号：US06946625B2
公开(公告)日：2005-09-20
申请号：US10711064
申请日：2004-08-20
申请人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
发明人： Akira Kuibira , Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： H05B3/20 , C23C16/46 , H01L21/00 , H05B3/14 , H05B3/26 , H05B3/68
CPC分类号： H01L21/67103 , H05B3/143 , H05B3/265
摘要： Ceramic susceptor whose wafer-retaining face has superior isothermal properties, and that is suited to utilization in apparatuses for manufacturing semiconductors and in liquid-crystal manufacturing apparatuses. In plate-shaped sintered ceramic body 1, resistive heating element 2 is formed. Fluctuation in pullback length L between sintered ceramic body outer-peripheral edge 1a and resistive heating element substantive-domain outer-peripheral edge 2a is within ±0.8%, while isothermal rating of the entire surface of the wafer-retaining face is ±1.0% or less. Preferable is a superior isothermal rating of ±0.5% or less that can be achieved by bringing the fluctuation in pullback length L to within ±0.5%.
摘要翻译：其晶片保持面具有优异的等温性能，适用于半导体制造装置和液晶制造装置的陶瓷基座。在板状烧结陶瓷体1中，形成电阻加热元件2。烧结陶瓷体外周边缘1a和电阻加热元件本体外缘边缘2a之间的回拉长度L的波动在±0.8％以内，而晶片保持面的整个表面的等温额定值为±1.0 ％或更少。优选的等温额定值为±0.5％以下，通过使拉回长度L的波动在±0.5％以内可以实现。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式