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1. 发明授权

US06734079B2 Microelectronic fabrication having sidewall passivated microelectronic capacitor structure fabricated therein 有权
标题翻译：具有在其中制造的侧壁钝化微电子电容器结构的微电子制造
公开(公告)号：US06734079B2
公开(公告)日：2004-05-11
申请号：US10170840
申请日：2002-06-13
申请人： Chi-Feng Huang , Shyh-Chyi Wang , Chih-Hsien Lin , Chun-Hon Chen , Tien-I Bao , Syun-Ming Jang
发明人： Chi-Feng Huang , Shyh-Chyi Wang , Chih-Hsien Lin , Chun-Hon Chen , Tien-I Bao , Syun-Ming Jang
IPC分类号： H01L2120
CPC分类号： H01L28/55 , Y10S438/945
摘要： Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure which comprises a first capacitor plate layer having formed thereupon a capacitor dielectric layer in turn having formed thereupon a second capacitor plate layer, wherein each of the foregoing layers having an exposed sidewall to thus form a series of exposed sidewalls. The capacitor structure also comprises a silicon oxide dielectric layer formed passivating the series of exposed sidewalls of the first capacitor plate layer, the capacitor dielectric layer and the second capacitor plate layer a silicon oxide dielectric layer.
摘要翻译：在制造微电子制造的方法和使用该方法制造的微电子制造中，在微电子制造中形成电容器结构，该电容器结构包括依次形成有电容器电介质层的第一电容器板层，其上形成有第二电容器板层，其中每个前述层具有暴露的侧壁，从而形成一系列暴露的侧壁。电容器结构还包括形成钝化第一电容器板层的一系列暴露的侧壁，电容器介电层和第二电容器板层的氧化硅介电层的氧化硅介电层。

2. 发明授权

US07122878B2 Method to fabricate high reliable metal capacitor within copper back-end process 有权
标题翻译：在铜后端工艺中制造高可靠性金属电容器的方法
公开(公告)号：US07122878B2
公开(公告)日：2006-10-17
申请号：US11143229
申请日：2005-06-02
申请人： Chi-Feng Huang , Chun-Hon Chen , Shy Chy Wong , Chih Hsien Lin
发明人： Chi-Feng Huang , Chun-Hon Chen , Shy Chy Wong , Chih Hsien Lin
IPC分类号： H01L29/00
CPC分类号： H01L28/60 , H01L21/28568 , H01L21/3143 , H01L21/31608 , H01L21/31637 , H01L21/3185 , H01L21/76838 , H01L28/75
摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
摘要翻译：提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。产生金属互连的第一层，在要与其形成电容器的第一互连层的表面上提供交流接触点。使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，用于电容器和设置在下面的衬底中的半导体器件的进一步互连。

3. 发明授权

US06916722B2 Method to fabricate high reliable metal capacitor within copper back-end process 有权
标题翻译：在铜后端工艺中制造高可靠性金属电容器的方法
公开(公告)号：US06916722B2
公开(公告)日：2005-07-12
申请号：US10307617
申请日：2002-12-02
申请人： Chi-Feng Huang , Chun-Hon Chen , Shy-Chy Wong , Chih Hsien Lin
发明人： Chi-Feng Huang , Chun-Hon Chen , Shy-Chy Wong , Chih Hsien Lin
IPC分类号： H01L21/02 , H01L21/285 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/20
CPC分类号： H01L28/60 , H01L21/28568 , H01L21/3143 , H01L21/31608 , H01L21/31637 , H01L21/3185 , H01L21/76838 , H01L28/75
摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, a contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
摘要翻译：提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。产生第一层金属互连，在第一层互连层的表面上提供一个接触点，与其形成电容器。使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，以便电容器和设置在下面的衬底中的半导体器件进一步互连。

4. 发明授权

US06583491B1 Microelectronic fabrication having microelectronic capacitor structure fabricated therein 有权
标题翻译：在其中制造具有微电子电容器结构的微电子制造
公开(公告)号：US06583491B1
公开(公告)日：2003-06-24
申请号：US10143162
申请日：2002-05-09
申请人： Chi-Feng Huang , Chun-Hon Chen
发明人： Chi-Feng Huang , Chun-Hon Chen
IPC分类号： H01L2900
CPC分类号： H01L28/55
摘要： Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure upon a conductor stud layer formed into a first via defined by a patterned dielectric layer to reach a one of a pair of patterned conductor layers within the microelectronic fabrication prior to forming through the patterned dielectric layer a second via to reach the other of the pair of patterned conductor layers within the microelectronic fabrication. The method provides the resulting microelectronic fabrication with enhanced reliability and performance.
摘要翻译：在制造微电子制造的方法和使用该方法制造的微电子制造中，在微电子制造中形成电容器结构，该电容器结构形成在由图案化的介电层限定的第一通孔中的导体柱层上，以达到在微电子制造之前，在通过图案化的电介质层形成第二通孔以达到微电子制造中的一对图案化导体层中的另一个之前，微电子制造中的一对图案化导体层。该方法提供了所得的微电子制造，具有增强的可靠性和性能。

5. 发明申请

US20050221575A1 Novel method to fabricate high reliable metal capacitor within copper back-end process 有权
标题翻译：在铜后端工艺中制造高可靠性金属电容器的新方法
公开(公告)号：US20050221575A1
公开(公告)日：2005-10-06
申请号：US11143229
申请日：2005-06-02
申请人： Chi-Feng Huang , Chun-Hon Chen , Shy-Chy Wong , Chih Lin
发明人： Chi-Feng Huang , Chun-Hon Chen , Shy-Chy Wong , Chih Lin
IPC分类号： H01L21/02 , H01L21/285 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/8242 , H01L21/20
CPC分类号： H01L28/60 , H01L21/28568 , H01L21/3143 , H01L21/31608 , H01L21/31637 , H01L21/3185 , H01L21/76838 , H01L28/75
摘要： A new method is provided for the creation of a high-reliability metal capacitor as part of back-end processing. A first layer of metal interconnect is created, ac contact point is provided in the surface of the first layer of interconnect aligned with which a capacitor is to be created. A copper interconnect is formed overlying the contact point using TaN for the bottom plate, a high dielectric-constant dielectric material capacitor and using TaN for the top plate. The deposited layers are patterned and etched, a spacer layer is formed over sidewalls of the capacitor to prevent capacitor sidewall leakage. Top interconnect metal is then formed by first depositing a layer of etch stop material for further interconnection of the capacitor and the semiconductor devices provided in the underlying substrate.
摘要翻译：提供了一种用于创建高可靠性金属电容器作为后端处理的一部分的新方法。产生金属互连的第一层，在要与其形成电容器的第一互连层的表面上提供交流接触点。使用用于底板的TaN，高介电常数介电材料电容器和使用TaN作为顶板，形成覆盖接触点的铜互连。沉积的层被图案化和蚀刻，在电容器的侧壁上形成间隔层以防止电容器侧壁泄漏。然后通过首先沉积一层蚀刻停止材料形成顶部互连金属，以便电容器和设置在下面的衬底中的半导体器件进一步互连。

6. 发明授权

US06667217B1 Method of fabricating a damascene copper inductor structure using a sub-0.18 um CMOS process 有权
标题翻译：使用亚0.18μmCMOS工艺制造镶嵌铜电感器结构的方法
公开(公告)号：US06667217B1
公开(公告)日：2003-12-23
申请号：US09795115
申请日：2001-03-01
申请人： Heng-Ming Hsu , Jau-Yuann Chung , Yen-Shih Ho , Chun-Hon Chen , Kuo-Reay Peng , Ta-Hsun Yeh , Kong-Beng Thei , Ssu-Pin Ma
发明人： Heng-Ming Hsu , Jau-Yuann Chung , Yen-Shih Ho , Chun-Hon Chen , Kuo-Reay Peng , Ta-Hsun Yeh , Kong-Beng Thei , Ssu-Pin Ma
IPC分类号： H01L2120
CPC分类号： H01L28/10 , H01F17/0006 , H01F41/042 , H01L23/5227 , H01L27/08 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A process for integrating the fabrication of a thick, copper inductor structure, with the fabrication of narrow channel length CMOS devices, has been developed. The integrated process features the use of only one additional photolithographic masking step, used to form the opening in an IMD layer, that will accommodate the subsequent inductor structure. After forming damascene type openings in the same IMD layer, in the CMOS region, copper is deposited and then defined, to result in a thick, copper inductor structure, in the opening in the IMD layer, in a first region of a semiconductor substrate, as well as to result in copper interconnect structures, in the damascene type openings located in a second region of the semiconductor structure, used for the narrow channel length CMOS devices. The use of a thick, copper inductor structure, equal to the thickness of the IMD layer, results in increased inductance, or an increased quality factor, when compared to counterparts formed with thinner metal inductors.
摘要翻译：已经开发了将厚铜电感器结构的制造与窄沟道长度CMOS器件的制造相结合的工艺。集成过程的特征在于仅使用一个额外的光刻掩模步骤，用于在IMD层中形成开口，其将适应随后的电感器结构。在相同的IMD层中形成镶嵌型开口之后，在CMOS区域中，沉积铜，然后限定铜，以在半导体衬底的第一区域中的IMD层的开口中产生厚的铜电感器结构，以及在半导体结构的第二区域中的镶嵌型开口中产生用于窄沟道长度CMOS器件的铜互连结构。与使用较薄的金属电感器形成的对应物相比，使用等于IMD层的厚度的厚铜电感器结构导致增加的电感或增加的品质因数。

7. 发明授权

US6051475A Method for manufacturing a silicide to silicide capacitor 失效
标题翻译：硅化物电容器的制造方法
公开(公告)号：US6051475A
公开(公告)日：2000-04-18
申请号：US089558
申请日：1998-06-03
申请人： Yen-Shih Ho , Chun-Hon Chen
发明人： Yen-Shih Ho , Chun-Hon Chen
IPC分类号： H01L21/02 , H01L21/28
CPC分类号： H01L28/40 , H01L28/60
摘要： A process is described for the manufacture of a capacitor having low V.sub.cc. Said process is fully compatible with standard IC manufacturing and introduces minimum modification thereto. The process involves the formation of a capacitor having both upper and lower electrodes that comprise layers of a metal silicide. The lower electrode is formed as a byproduct of the SALICIDE process while the upper electrode is formed by first laying down a layer of polysilicon followed by a layer of a silicide-forming metal such as titanium, cobalt, or tungsten. Sufficient of the metal must be provided to ensure that all of the polysilicon gets transformed to silicide.
摘要翻译：描述了制造具有低Vcc的电容器的工艺。所述方法与标准IC制造完全兼容，并对其进行最小修改。该方法包括形成具有包括金属硅化物层的上电极和下电极的电容器。下电极形成为SALICIDE工艺的副产物，而上电极通过首先铺设多晶硅层，然后形成诸如钛，钴或钨的硅化物形成金属层而形成。必须提供足够的金属以确保所有的多晶硅转变为硅化物。

8. 发明申请

US20050206469A1 Interdigitated capacitor and method for fabrication therof 有权
标题翻译：交叉电容器及其制造方法
公开(公告)号：US20050206469A1
公开(公告)日：2005-09-22
申请号：US10804899
申请日：2004-03-19
申请人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chung-Long Chang , Chun-Hon Chen
发明人： Wen-Chin Lin , Denny Tang , Li-Shyue Lai , Chung-Long Chang , Chun-Hon Chen
IPC分类号： H01L23/522 , H01P1/36
CPC分类号： H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： A capacitor for use within a microelectronic product employs a first capacitor plate layer that includes a first series of horizontally separated and interconnected tines. A capacitor dielectric layer separates the first capacitor plate layer from a second capacitor plate layer. The second capacitor plate layer includes a second series of horizontally separated and interconnected tines horizontally interdigitated with the first series of horizontally separated and interconnected tines. The capacitor is formed employing a self-aligned method and the capacitor dielectric layer is formed in a serpentine shape.
摘要翻译：在微电子产品中使用的电容器采用第一电容器板层，其包括第一系列水平分离和互连的尖齿。电容器电介质层将第一电容器板层与第二电容器板层分开。第二电容器板层包括与第一系列水平分离和互相联接的齿水平地交叉指向的第二系列水平分离和互连的齿。使用自对准方法形成电容器，并且电容器介电层形成为蛇形形状。

9. 发明申请

US20050077581A1 Metal-over-metal devices and the method for manufacturing same 有权
公开(公告)号：US20050077581A1
公开(公告)日：2005-04-14
申请号：US10683900
申请日：2003-10-10
申请人： Chung-Long Chang , Chun-Hon Chen
发明人： Chung-Long Chang , Chun-Hon Chen
IPC分类号： H01L23/522 , H01L29/76
CPC分类号： H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A metal-over-metal (MOM) device and the method for manufacturing same is provided. The device has at least one device cell on a first layer comprising a frame piece and a center piece surrounded by the frame piece. The center piece has a cross-shape center portion defining four quadrants of space between the frame and center pieces. The center piece has one or more center fingers each extending from at least one of the four ends thereof within a quadrant. The frame piece also has one or more frame fingers extending therefrom, each being in at least one quadrant and not being overlapped with the center finger in the same quadrant.

10. 发明授权

US07317221B2 High density MIM capacitor structure and fabrication process 有权
标题翻译：高密度MIM电容器结构及制造工艺
公开(公告)号：US07317221B2
公开(公告)日：2008-01-08
申请号：US10729034
申请日：2003-12-04
申请人： Kuan-Lun Chang , Chuan-Ying Lee , Chun-Hon Chen
发明人： Kuan-Lun Chang , Chuan-Ying Lee , Chun-Hon Chen
IPC分类号： H01L29/72
CPC分类号： H01L28/40 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/3011 , Y10S438/957 , H01L2924/00
摘要： A stacked integrated circuit (IC) MIM capacitor structure and method for forming the same the MIM capacitor structure including a first MIM capacitor structure formed in a first IMD layer comprising an first upper and first lower electrode portions; at least a second MIM capacitor structure arranged in stacked relationship in an overlying IMD layer comprising a second upper electrode and second lower electrode to form an MIM capacitor stack; wherein, the first lower electrode is arranged in common electrical signal communication comprising metal filled vias with the second upper electrode and the first upper electrode is arranged in common electrical signal communication with the second lower electrode.
摘要翻译：一种用于形成MIM电容器结构的叠层集成电路（IC）MIM电容器结构及方法，包括形成在包括第一上电极部分和第一下电极部分的第一IMD层中的第一MIM电容器结构; 至少第二MIM电容器结构，以层叠的关系布置在包括第二上电极和第二下电极的上覆IMD层中，以形成MIM电容器堆叠; 其中，所述第一下部电极布置成共同的电信号通信，包括金属填充的通孔与所述第二上部电极和所述第一上部电极被布置成与所述第二下部电极共同的电信号通信。

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