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    • 2. 发明申请
    • ELECTROCHEMICAL MEMORY WITH INTERNAL BOUNDARY
    • 具有内部边界的电化学记忆
    • US20080078985A1
    • 2008-04-03
    • US11864426
    • 2007-09-28
    • Rene MeyerPaul McIntyre
    • Rene MeyerPaul McIntyre
    • H01L47/00
    • G11C13/02G11C2213/11H01L45/08H01L45/12H01L45/142H01L45/146H01L45/147
    • Non-volatile resistance change memories, systems, arrangements and associated methods are implemented in a variety of embodiments. According to one embodiment, a memory cell having two sections with outwardly-facing portions, the outwardly-facing portions electrically coupled to electrodes is implemented. The memory cell has an ionic barrier between the two sections. The two sections and the ionic barrier facilitate movement of ions from one of the two sections to the other of the two sections in response to a first voltage differential across the outwardly-facing portions. The two sections and the ionic barrier diminish movement of ions from the one of the two sections to the other of the two sections in response to another voltage differential across the outwardly-facing portions.
    • 在各种实施例中实现非易失性电阻变化存储器,系统,布置和相关联的方法。 根据一个实施例,实现了具有两个部分的存储单元,其具有朝外的部分,电耦合到电极的朝外的部分被实现。 记忆单元在两个部分之间具有离子屏障。 两个部分和离子屏障促使离子从两个部分中的一个移动到两个部分中的另一个部分,以响应跨越面向外部分的第一电压差。 两个部分和离子屏障响应于穿过面向外部分的另一个电压差,使离子从两个部分中的一个部分移动到两个部分中的另一个部分。
    • 6. 发明授权
    • Metal patterning with adhesive hardmask layer
    • 金属图案与粘合剂硬掩模层
    • US06211034B1
    • 2001-04-03
    • US09059546
    • 1998-04-13
    • Mark R. VisokayLuigi ColomboPaul McIntyreScott R. Summerfelt
    • Mark R. VisokayLuigi ColomboPaul McIntyreScott R. Summerfelt
    • H01L218242
    • H01L28/60H01L21/32139H01L27/1085
    • An adherent hardmask structure and method of etching a bottom electrode in memory device capacitor structures that dispenses with the need for any adhesion promoter during the etching of the bottom electrode. By using silicon nitride as a hardmask 220, the processing is simplified and a more robust capacitor structure can be produced. Silicon nitride 220 has been shown to yield significantly enhanced adhesion to platinum 210, as compared to silicon oxide formed by any method. Since silicon nitride 220 is oxidation resistant, it advantageously resists any oxygen plasma that might be used in the etch chemistry. This etching process can be used during processing of high-k capacitor structures in DRAMs in the ≧256 Mbit generations.
    • 一种粘附硬掩模结构和蚀刻存储器件电容器结构中的底部电极的方法,其在底部电极的蚀刻期间省去了对任何粘附促进剂的需要。 通过使用氮化硅作为硬掩模220,简化了处理,并且可以产生更坚固的电容器结构。 与通过任何方法形成的氧化硅相比,已经显示氮化硅220产生显着增强的与铂210的粘合性。 由于氮化硅220是抗氧化的,所以它有利地抵抗可能在蚀刻化学中使用的任何氧等离子体。 这种蚀刻工艺可以在> = 256Mbit的DRAM中的高k电容器结构的处理期间使用。
    • 8. 发明申请
    • Gutter cleaning vacuum system including a novel hinged vacuum manifold assembly
    • 沟槽清洁真空系统包括一个新颖的铰链真空歧管组件
    • US20070226945A1
    • 2007-10-04
    • US11726465
    • 2007-03-21
    • Paul McIntyre
    • Paul McIntyre
    • A47L9/00
    • A47L5/365A47L9/009A47L9/1418E04D13/0765Y10S55/03
    • In various exemplary embodiments, the present invention provides a lightweight, maneuverable, thin-walled, transparent apparatus for use with a heavy-duty vacuum system for quickly and easily collecting and storing large volumes of bulky debris, thereby reducing the time needed for cleanup. The present invention also provides an improved vacuum manifold assembly that may be used in conjunction with various gas and electric blower/vacuum motors, both novel and conventional. The present invention further provides various gutter cleaning and other tools that may be used in conjunction with such a vacuum system. The gutter cleaning vacuum system including the improved hinged vacuum manifold assembly of the present invention has sufficient power and is designed such that the various gutter cleaning and other tools are effective, suction-wise, at great distances from the unit, such that an operator may use the gutter cleaning and other tools at great distances over his/her head, for example.
    • 在各种示例性实施例中,本发明提供了一种与重型真空系统一起使用的轻质的,可操作的薄壁透明装置,用于快速且容易地收集和存储大量的大块碎屑,从而减少了清理所需的时间。 本发明还提供了一种改进的真空歧管组件,其可以与新颖的和常规的各种气体和电动鼓风机/真空马达结合使用。 本发明还提供了可以与这种真空系统结合使用的各种沟槽清洁和其它工具。 包括本发明的改进的铰接式真空歧管组件的沟槽清洁真空系统具有足够的功率,并且被设计成使得各种沟槽清洁和其它工具在抽吸方面距离单元很远的距离是有效的,使得操作者可以 例如,在他/她的头上使用沟槽清洁和其他工具在很远的距离。