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1. 发明授权

US08691697B2 Self-aligned devices and methods of manufacture 失效
标题翻译：自对准装置和制造方法
公开(公告)号：US08691697B2
公开(公告)日：2014-04-08
申请号：US12943956
申请日：2010-11-11
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L21/302 , B44C1/22
CPC分类号： H01L21/31056 , H01L21/0337 , H01L21/0338 , H01L21/32139
摘要： A method includes forming patterned lines on a substrate having a predetermined pitch. The method further includes forming spacer sidewalls on sidewalls of the patterned lines. The method further includes forming material in a space between the spacer sidewalls of adjacent patterned lines. The method further includes forming another patterned line from the material by protecting the material in the space between the spacer sidewalls of adjacent patterned lines while removing the spacer sidewalls. The method further includes transferring a pattern of the patterned lines and the another patterned line to the substrate.
摘要翻译：一种方法包括在具有预定间距的基底上形成图案线。该方法还包括在图案化线的侧壁上形成间隔壁。该方法还包括在相邻图案线的间隔壁侧壁之间的空间中形成材料。该方法还包括通过在相邻图案化线的间隔壁侧壁之间的空间中保护材料同时去除间隔壁侧壁而从该材料形成另一图案化线。该方法还包括将图案化线和另一图案化线的图案转移到衬底。

2. 发明授权

US08564069B1 Field effect transistors with low body resistance and self-balanced body potential 有权
标题翻译：具有低体电阻和自平衡体电位的场效应晶体管
公开(公告)号：US08564069B1
公开(公告)日：2013-10-22
申请号：US13590212
申请日：2012-08-21
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L27/088
CPC分类号： H01L27/088 , H01L21/823412 , H01L21/823437 , H01L27/027 , H01L29/0615 , H01L29/78
摘要： Embodiments of the invention relate generally to semiconductor devices and, more particularly, to semiconductor devices having field effect transistors (FETs) with a low body resistance and, in some embodiments, a self-balanced body potential where multiple transistors share same body potential. In one embodiment, the invention includes a field effect transistor (FET) comprising a source within a substrate, a drain within the substrate, and an active gate atop the substrate and between the source and the drain, an inactive gate structure atop the substrate and adjacent the source or the drain, a body adjacent the inactive gate, and a discharge path within the substrate for releasing a charge from the FET, the discharge path lying between the active gate of the FET and the body, wherein the discharge path is substantially perpendicular to a width of the active gate.
摘要翻译：本发明的实施例大体上涉及半导体器件，更具体地，涉及具有低体电阻的场效应晶体管（FET）的半导体器件，在一些实施例中，具有多个晶体管共享相同体电位的自平衡体电位。在一个实施例中，本发明包括场效应晶体管（FET），其包括在衬底内的源极，衬底内的漏极，以及位于衬底顶部和源极与漏极之间的有源栅极，在衬底顶部的非活性栅极结构，邻近源极或漏极，与非活性栅极相邻的主体以及衬底内的用于从FET释放电荷的放电路径，放电路径位于FET的有源栅极和主体之间，其中放电路径基本上垂直于有源栅极的宽度。

3. 发明授权

US08299530B2 Structure and method to fabricate pFETS with superior GIDL by localizing workfunction 失效
标题翻译：通过定位功能来制造具有优异GIDL的pFETS的结构和方法
公开(公告)号：US08299530B2
公开(公告)日：2012-10-30
申请号：US12717375
申请日：2010-03-04
申请人： Chengwen Pei , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Ravi M. Todi , Geng Wang
发明人： Chengwen Pei , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Ravi M. Todi , Geng Wang
IPC分类号： H01L27/12 , H01L21/8238
CPC分类号： H01L21/22 , H01L21/8238 , H01L27/092
摘要： A semiconductor structure and a method of forming the same are provided in which the gate induced drain leakage is controlled by introducing a workfunction tuning species within selected portions of a pFET such that the gate/SD (source/drain) overlap area of the pFET is tailored towards flatband, yet not affecting the workfunction at the device channel region. The structure includes a semiconductor substrate having at least one patterned gate stack located within a pFET device region of the semiconductor substrate. The structure further includes extension regions located within the semiconductor substrate at a footprint of the at least one patterned gate stack. A channel region is also present and is located within the semiconductor substrate beneath the at least one patterned gate stack. The structure further includes a localized workfunction tuning area located within a portion of at least one of the extension regions that is positioned adjacent the channel region as well as within at least a sidewall portion of the at least one gate stack. The localized workfunction tuning area can be formed by ion implantation or annealing.
摘要翻译：提供了一种半导体结构及其形成方法，其中通过在pFET的选定部分内引入功函数调谐物质来控制栅极感应漏极泄漏，使得pFET的栅极/ SD（源极/漏极）重叠区域为适应平带，但不影响设备通道区域的功能。该结构包括具有位于半导体衬底的pFET器件区域内的至少一个图案化栅叠层的半导体衬底。所述结构还包括位于所述半导体衬底内的所述至少一个图案化栅叠层的覆盖区的扩展区。沟道区域也存在并且位于至少一个图案化栅叠层下方的半导体衬底内。该结构进一步包括位于至少一个延伸区域的一部分内的局部功能调谐区域，其位于邻近通道区域以及至少一个栅极叠层的至少一个侧壁部分内。通过离子注入或退火可形成局部功能调谐区域。

4. 发明授权

US08455875B2 Embedded DRAM for extremely thin semiconductor-on-insulator 有权
公开(公告)号：US08455875B2
公开(公告)日：2013-06-04
申请号：US12776829
申请日：2010-05-10
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Ali Khakifirooz , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Ali Khakifirooz , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L29/12
CPC分类号： H01L29/66742 , H01L21/84 , H01L27/1087 , H01L27/1203 , H01L29/66181 , H01L29/945
摘要： A node dielectric and a conductive trench fill region filling a deep trench are recessed to a depth that is substantially coplanar with a top surface of a semiconductor-on-insulator (SOI) layer. A shallow trench isolation portion is formed on one side of an upper portion of the deep trench, while the other side of the upper portion of the deep trench provides an exposed surface of a semiconductor material of the conductive fill region. A selective epitaxy process is performed to deposit a raised source region and a raised strap region. The raised source region is formed directly on a planar source region within the SOI layer, and the raised strap region is formed directly on the conductive fill region. The raised strap region contacts the raised source region to provide an electrically conductive path between the planar source region and the conductive fill region.

5. 发明授权

US08232162B2 Forming implanted plates for high aspect ratio trenches using staged sacrificial layer removal 失效
标题翻译：使用分层牺牲层去除形成用于高纵横比沟槽的植入板
公开(公告)号：US08232162B2
公开(公告)日：2012-07-31
申请号：US12880419
申请日：2010-09-13
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang , Yanli Zhang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang , Yanli Zhang
IPC分类号： H01L21/8242
CPC分类号： H01L29/66181 , H01L27/1087
摘要： A method of forming a deep trench structure for a semiconductor device includes forming a mask layer over a semiconductor substrate. An opening in the mask layer is formed by patterning the mask layer, and a deep trench is formed in the semiconductor substrate using the patterned opening in the mask layer. A sacrificial fill material is formed over the mask layer and into the deep trench. A first portion of the sacrificial fill material is recessed from the deep trench and a first dopant implant forms a first doped region in the semiconductor substrate. A second portion of the sacrificial fill material is recessed from the deep trench and a second dopant implant forms a second doped region in the semiconductor substrate, wherein the second doped region is formed underneath the first doped region such that the second doped region and the first doped region are contiguous with each other.
摘要翻译：形成半导体器件的深沟槽结构的方法包括在半导体衬底上形成掩模层。通过对掩模层进行构图来形成掩模层中的开口，并且使用掩模层中的图案化开口在半导体衬底中形成深沟槽。牺牲填充材料形成在掩模层上并进入深沟槽中。牺牲填充材料的第一部分从深沟槽凹陷，并且第一掺杂剂注入在半导体衬底中形成第一掺杂区域。牺牲填充材料的第二部分从深沟槽凹陷，并且第二掺杂剂注入在半导体衬底中形成第二掺杂区，其中第二掺杂区形成在第一掺杂区的下方，使得第二掺杂区和第一掺杂区掺杂区域彼此邻接。

6. 发明授权

US08809994B2 Deep isolation trench structure and deep trench capacitor on a semiconductor-on-insulator substrate 有权
标题翻译：绝缘体上半导体衬底上的深度隔离沟槽结构和深沟槽电容器
公开(公告)号：US08809994B2
公开(公告)日：2014-08-19
申请号：US13316104
申请日：2011-12-09
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L21/70
CPC分类号： H01L27/1087 , H01L27/10829 , H01L27/1203 , H01L29/945
摘要： Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an upper thermal oxide portion and a lower thermal oxide portion, while the remaining oxygen-impermeable layer on sidewalls of a second trench prevents oxidation of the semiconductor materials. After formation of a node dielectric on sidewalls of the second trench, a conductive material is deposited to fill the trenches, thereby forming a conductive trench fill portion and an inner electrode, respectively. The upper and lower thermal oxide portions function as components of dielectric material portions that electrically isolate two device regions.
摘要翻译：在绝缘体上半导体（SOI）衬底中形成具有不同宽度的两个沟槽。在沟槽中形成不透氧层和填充材料层。从第一沟槽内去除填充材料层和不透氧层。执行热氧化以将第一沟槽的侧壁下方的半导体材料转换成上部热氧化物部分和下部热氧化物部分，而在第二沟槽的侧壁上的剩余的不透氧层防止半导体材料的氧化。在第二沟槽的侧壁上形成节点电介质之后，沉积导电材料以填充沟槽，从而分别形成导电沟槽填充部分和内部电极。上部和下部热氧化物部分用作电绝缘两个器件区域的介电材料部分的部件。

7. 发明授权

US08846470B2 Metal trench capacitor and improved isolation and methods of manufacture 有权
标题翻译：金属沟槽电容器和改进的隔离和制造方法
公开(公告)号：US08846470B2
公开(公告)日：2014-09-30
申请号：US13153538
申请日：2011-06-06
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L21/8242 , H01L49/02 , H01L21/762 , H01L29/66 , H01L21/74 , H01L27/06
CPC分类号： H01L27/10829 , H01L21/743 , H01L21/76283 , H01L27/0629 , H01L27/108 , H01L27/1087 , H01L27/1203 , H01L28/60 , H01L28/92 , H01L29/0649 , H01L29/66181
摘要： A high-k dielectric metal trench capacitor and improved isolation and methods of manufacturing the same is provided. The method includes forming at least one deep trench in a substrate, and filling the deep trench with sacrificial fill material and a poly material. The method further includes continuing with CMOS processes, comprising forming at least one transistor and back end of line (BEOL) layer. The method further includes removing the sacrificial fill material from the deep trenches to expose sidewalls, and forming a capacitor plate on the exposed sidewalls of the deep trench. The method further includes lining the capacitor plate with a high-k dielectric material and filling remaining portions of the deep trench with a metal material, over the high-k dielectric material. The method further includes providing a passivation layer on the deep trench filled with the metal material and the high-k dielectric material.
摘要翻译：提供了高k电介质金属沟槽电容器和改进的隔离及其制造方法。该方法包括在衬底中形成至少一个深沟槽，并用牺牲填充材料和聚合材料填充深沟槽。该方法还包括继续CMOS工艺，包括形成至少一个晶体管和后端（BEOL）层。该方法还包括从深沟槽去除牺牲填充材料以暴露侧壁，以及在深沟槽的暴露的侧壁上形成电容器板。该方法还包括用高k电介质材料衬套电容器板，并用金属材料在高k电介质材料上填充深沟槽的剩余部分。该方法还包括在填充有金属材料和高k电介质材料的深沟槽上提供钝化层。

8. 发明授权

US08829585B2 High density memory cells using lateral epitaxy 有权
标题翻译：使用横向外延的高密度记忆细胞
公开(公告)号：US08829585B2
公开(公告)日：2014-09-09
申请号：US13118881
申请日：2011-05-31
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , David M. Fried , Byeong Y. Kim , Chengwen Pei , Ravi M. Todi , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , David M. Fried , Byeong Y. Kim , Chengwen Pei , Ravi M. Todi , Geng Wang
IPC分类号： H01L27/108 , H01L29/94
CPC分类号： H01L29/92 , H01L27/10829 , H01L27/10861 , H01L27/1203
摘要： In a vertical dynamic memory cell, monocrystalline semiconductor material of improved quality is provided for the channel of an access transistor by lateral epitaxial growth over an insulator material (which complements the capacitor dielectric in completely surrounding the storage node except at a contact connection structure, preferably of metal, from the access transistor to the storage node electrode) and etching away a region of the lateral epitaxial growth including a location where crystal lattice dislocations are most likely to occur; both of which features serve to reduce or avoid leakage of charge from the storage node. An isolation structure can be provided in the etched region such that space is provided for connections to various portions of a memory cell array.
摘要翻译：在垂直动态存储单元中，通过在绝缘体材料上的横向外延生长（其补充电容器电介质完全围绕存储节点，除了接触连接结构，优选地，存储晶体管的沟道）为存取晶体管的沟道提供改善的质量的单晶半导体材料的金属，从存取晶体管到存储节点电极），并蚀刻掉包括最可能发生晶格位错的位置的横向外延生长的区域; 这两个特征用于减少或避免从存储节点泄漏电荷。可以在蚀刻区域中提供隔离结构，使得提供用于连接到存储单元阵列的各个部分的空间。

9. 发明授权

US08647945B2 Method of forming substrate contact for semiconductor on insulator (SOI) substrate 有权
标题翻译：半导体绝缘体（SOI）衬底的衬底接触形成方法
公开(公告)号：US08647945B2
公开(公告)日：2014-02-11
申请号：US12959824
申请日：2010-12-03
申请人： Geng Wang , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi
发明人： Geng Wang , Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Ravi M. Todi
IPC分类号： H01L21/70
CPC分类号： H01L28/40 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/743 , H01L21/76224 , H01L21/76229 , H01L21/84 , H01L27/1087 , H01L27/1203 , H01L28/91 , H01L29/0649 , H01L29/66181
摘要： A semiconductor structure is provided that includes a material stack including an epitaxially grown semiconductor layer on a base semiconductor layer, a dielectric layer on the epitaxially grown semiconductor layer, and an upper semiconductor layer present on the dielectric layer. A capacitor is present extending from the upper semiconductor layer through the dielectric layer into contact with the epitaxially grown semiconductor layer. The capacitor includes a node dielectric present on the sidewalls of the trench and an upper electrode filling at least a portion of the trench. A substrate contact is present in a contact trench extending from the upper semiconductor layer through the dielectric layer and the epitaxially semiconductor layer to a doped region of the base semiconductor layer. A substrate contact is also provided that contacts the base semiconductor layer through the sidewall of a trench. Methods for forming the above-described structures are also provided.
摘要翻译：提供一种半导体结构，其包括在基底半导体层上包含外延生长的半导体层的材料堆叠，外延生长的半导体层上的电介质层和存在于电介质层上的上半导体层。存在从上半导体层通过电介质层延伸到与外延生长的半导体层接触的电容器。电容器包括存在于沟槽的侧壁上的节点电介质和填充沟槽的至少一部分的上电极。在从上半导体层通过电介质层和外延半导体层延伸到基底半导体层的掺杂区域的接触沟槽中存在衬底接触。还提供了通过沟槽的侧壁接触基底半导体层的衬底接触。还提供了形成上述结构的方法。

10. 发明授权

US08492811B2 Self-aligned strap for embedded capacitor and replacement gate devices 有权
标题翻译：嵌入式电容器和更换栅极器件的自对准带
公开(公告)号：US08492811B2
公开(公告)日：2013-07-23
申请号：US12886224
申请日：2010-09-20
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Geng Wang
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Joseph Ervin , Chengwen Pei , Geng Wang
IPC分类号： H01L27/108
CPC分类号： H01L27/10876 , H01L21/84 , H01L27/10873 , H01L27/10894 , H01L27/1203 , H01L29/66181 , H01L29/945
摘要： After forming a planarization dielectric layer in a replacement gate integration scheme, disposable gate structures are removed and a stack of a gate dielectric layer and a gate electrode layer is formed within recessed gate regions. Each gate electrode structure is then recessed below a topmost surface of the gate dielectric layer. A dielectric metal oxide portion is formed above each gate electrode by planarization. The dielectric metal oxide portions and gate spacers are employed as a self-aligning etch mask in combination with a patterned photoresist to expose and metalize semiconductor surfaces of a source region and an inner electrode in each embedded memory cell structure. The metalized semiconductor portions form metal semiconductor alloy straps that provide a conductive path between the inner electrode of a capacitor and the source of an access transistor.
摘要翻译：在替代栅极集成方案中形成平坦化介电层之后，去除一次性栅极结构，并且在凹入的栅极区内形成栅极电介质层和栅极电极层的堆叠。然后，每个栅极电极结构凹陷在栅极电介质层的最上表面之下。通过平面化形成在每个栅电极上方的介电金属氧化物部分。电介质金属氧化物部分和栅极间隔物用作自对准蚀刻掩模与图案化的光致抗蚀剂组合以在每个嵌入的存储器单元结构中暴露和金属化源极区域和内部电极的半导体表面。金属化半导体部分形成金属半导体合金带，其在电容器的内部电极和存取晶体管的源之间提供导电路径。

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