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1. 发明申请

US20100301236A1 Shorten Temperature Recovery Time of Low Temperature Ion Implantation 审中-公开
标题翻译：缩短低温离子植入的温度恢复时间
公开(公告)号：US20100301236A1
公开(公告)日：2010-12-02
申请号：US12472316
申请日：2009-05-26
申请人： Shih-Yung Shieh , Cheng-Hui Shen
发明人： Shih-Yung Shieh , Cheng-Hui Shen
IPC分类号： H01J37/08
CPC分类号： H01J37/3171 , H01J2237/2001 , H01J2237/2002 , H01L21/265
摘要： The present invention discloses a low temperature ion implantation by performing a heating process after the end of an implanting process and before the wafer is moved into the external environment. This invention actively raises wafer temperature at a time no later than implementation of the vacuum venting process, such that the condensed moisture induced by the temperature difference between a vacuum environment inside ion implanter and an external environment outside ion implanter is effectively minimized. The wafer can be heated at a loadlock, a robot for transferring wafer and/or an implantation chamber. The wafer can be heated by a gas, a liquid, a light and/or a heater embedded in a holder for holding the wafer.
摘要翻译：本发明公开了一种低温离子注入，通过在植入过程结束之后并且在晶片移动到外部环境中之前执行加热过程。本发明在不迟于实施真空排气过程的时候主动地提高晶片温度，使得离子注入机内的真空环境和离子注入机外部的外部环境之间的温度差引起的冷凝水分被有效地最小化。可以在负载锁上加热晶片，用于传送晶片和/或注入室的机器人。可以通过嵌入在用于保持晶片的保持器中的气体，液体，光和/或加热器来加热晶片。

2. 发明授权

US08975547B2 Keyswitch and keyboard including the same 有权
标题翻译：钥匙开关和键盘包括相同
公开(公告)号：US08975547B2
公开(公告)日：2015-03-10
申请号：US13612202
申请日：2012-09-12
申请人： Cheng-Hui Shen
发明人： Cheng-Hui Shen
IPC分类号： H01H13/70
CPC分类号： H01H3/125
摘要： A keyswitch, disposed on a base plate, includes a keycap and a scissors-like supporting structure. The scissors-like supporting structure is disposed on the base plate and supports the keycap. The scissors-like supporting structure includes a first supporting member and a second supporting member. The first supporting member includes a first engaging shaft and a second engaging shaft respectively engaged with the base plate and the keycap. The second supporting member is pivotally connected to the first supporting member and includes a third engaging shaft and a fourth engaging shaft respectively engaged with the base plate and the keycap. A line connected between the centers of gravity of the first and second engaging shaft is not perpendicular to the first and second engaging shaft. A line connected between the centers of gravity of the third and fourth engaging shaft is not perpendicular to the third and fourth engaging shaft.
摘要翻译：设置在基板上的钥匙开关包括键帽和剪刀状支撑结构。剪刀状支撑结构设置在基板上并支撑键帽。剪刀状支撑结构包括第一支撑构件和第二支撑构件。第一支撑构件包括分别与基板和键帽接合的第一接合轴和第二接合轴。第二支撑构件枢转地连接到第一支撑构件，并且包括分别与基板和键帽接合的第三接合轴和第四接合轴。连接在第一和第二接合轴的重心之间的线不垂直于第一和第二接合轴。连接在第三和第四接合轴的重心之间的线不垂直于第三和第四接合轴。

3. 发明授权

US08168962B2 Method and apparatus for uniformly implanting a wafer with an ion beam 有权
标题翻译：用离子束均匀注入晶片的方法和装置
公开(公告)号：US08168962B2
公开(公告)日：2012-05-01
申请号：US12539558
申请日：2009-08-11
申请人： Cheng-Hui Shen , Don Berrian
发明人： Cheng-Hui Shen , Don Berrian
IPC分类号： G21G1/00
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/20214 , H01J2237/20228 , H01J2237/31701
摘要： Initially, an ion beam is formed as an elongated shape incident on a wafer, where the shape has a length along a first axis longer than a diameter of the wafer, and a width along a second axis shorter than the diameter of the wafer. Then, a center of the wafer is moved along a scan path intersecting the ion beam at a movement velocity, and the wafer is rotated around at a rotation velocity simultaneously. During the simultaneous movement and rotation, the wafer is totally overlapped with the ion beam along the first axis when the wafer intersects with the ion beam, and the rotation velocity is at most a few times of the movement velocity. Both the movement velocity and the rotation velocity can be a constant or have a velocity profile relative to a position of the ion beam across the wafer.
摘要翻译：最初，离子束形成为入射在晶片上的细长形状，其中形状具有长于晶片直径的第一轴的长度，以及沿着比晶片直径短的第二轴的宽度。然后，晶片的中心以与移动速度相交的扫描路径移动，并且晶片以旋转速度同时旋转。在同时移动和旋转期间，当晶片与离子束相交时，晶片与离子束完全重叠，并且旋转速度至多为移动速度的几倍。移动速度和旋转速度都可以是恒定的，或者具有相对于跨越晶片的离子束的位置的速度分布。

4. 发明申请

US20090194704A1 METHOD AND DEVICE OF ION SOURCE GENERATION 有权
标题翻译：离子源生成的方法和装置
公开(公告)号：US20090194704A1
公开(公告)日：2009-08-06
申请号：US12126312
申请日：2008-05-23
申请人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号： H01J27/02
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译：注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。因此，浅离子注入的植入效率因此增加。

5. 发明授权

US07772571B2 Implant beam utilization in an ion implanter 有权
标题翻译：植入物束在离子注入机中的利用
公开(公告)号：US07772571B2
公开(公告)日：2010-08-10
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10 , H01J37/08 , A61N5/00 , G21G5/00 , G06F19/00
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片来计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

6. 发明授权

US07683350B2 Ion implantation method 有权
标题翻译：离子注入法
公开(公告)号：US07683350B2
公开(公告)日：2010-03-23
申请号：US12126335
申请日：2008-05-23
申请人： Cheng-Hui Shen
发明人： Cheng-Hui Shen
IPC分类号： H01J37/317 , H01J37/08 , H01L21/265 , G21K5/00
CPC分类号： H01J37/1474 , H01J37/20 , H01J37/3171 , H01J2237/15 , H01J2237/20214 , H01J2237/30488 , H01J2237/31703 , H01J2237/31706 , H01L21/265
摘要： An ion implantation method is provided. The method, before ion implanting, is to rotate the substrate by an angle and shift the scan path of the ion beam with an interlace pitch in the direction perpendicular to the scan direction and on the plane of the substrate. Therefore a plurality of interlaced and not overlapped ion implantation scan lines are formed on the surface of the substrate, so the method can enhance the uniformity of the dose of the ion implantation in the substrate.
摘要翻译：提供离子注入方法。离子注入之前的方法是将衬底旋转一定角度，并且以垂直于扫描方向的方向和衬底的平面上的隔行间距移动离子束的扫描路径。因此，在衬底的表面上形成多个交错且不重叠的离子注入扫描线，因此该方法可以增强衬底中离子注入的剂量的均匀性。

7. 发明申请

US20090090876A1 IMPLANT BEAM UTILIZATION IN AN ION IMPLANTER 有权
标题翻译：在离子植入物中的植入物束的利用
公开(公告)号：US20090090876A1
公开(公告)日：2009-04-09
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

8. 发明授权

US08810438B2 Membrane circuit board and keyboard having the same 有权
标题翻译：膜电路板和键盘具有相同的功能
公开(公告)号：US08810438B2
公开(公告)日：2014-08-19
申请号：US13161231
申请日：2011-06-15
申请人： Ching-Cheng Tsai , Cheng-Hui Shen
发明人： Ching-Cheng Tsai , Cheng-Hui Shen
IPC分类号： H03K17/94 , F21V33/00 , G09G3/36 , H01H9/00 , H01H9/18 , H01H13/83
CPC分类号： H01H9/18 , H01H13/83 , H01H2209/06 , H01H2209/082 , H01H2211/004 , H01H2219/044 , H01H2219/062
摘要： A membrane circuit board and a keyboard device having the same are provided in the invention. The membrane circuit board is defined with a plurality of key regions. Each of the key regions is with a pressing region and at least one light-pervious region thereon. The membrane circuit board comprising at least two light-pervious membranes stacked with each other, and at least one light-pervious adhesive layer sandwiched between the two light-pervious membranes and at least fully filled in the light-pervious region.
摘要翻译：在本发明中提供了一种膜电路板和具有该膜电路板的键盘装置。膜电路板由多个键区限定。每个关键区域具有按压区域和其上的至少一个透光区域。所述膜电路板包括彼此层叠的至少两个透光膜，以及夹在所述两个透光膜之间并且至少完全填充在所述透光性区域中的至少一个透光性粘合剂层。

9. 发明申请

US20130334022A1 Keyswitch and Keyboard Including the Same 有权
标题翻译：钥匙开关和键盘包括它
公开(公告)号：US20130334022A1
公开(公告)日：2013-12-19
申请号：US13612202
申请日：2012-09-12
申请人： Cheng-Hui Shen
发明人： Cheng-Hui Shen
IPC分类号： H01H13/7065 , H01H13/14
CPC分类号： H01H3/125
摘要： A keyswitch, disposed on a base plate, includes a keycap and a scissors-like supporting structure. The scissors-like supporting structure is disposed on the base plate and supports the keycap. The scissors-like supporting structure includes a first supporting member and a second supporting member. The first supporting member includes a first engaging shaft and a second engaging shaft respectively engaged with the base plate and the keycap. The second supporting member is pivotally connected to the first supporting member and includes a third engaging shaft and a fourth engaging shaft respectively engaged with the base plate and the keycap. A line connected between the centers of gravity of the first and second engaging shaft is not perpendicular to the first and second engaging shaft. A line connected between the centers of gravity of the third and fourth engaging shaft is not perpendicular to the third and fourth engaging shaft.
摘要翻译：设置在基板上的钥匙开关包括键帽和剪刀状支撑结构。剪刀状支撑结构设置在基板上并支撑键帽。剪刀状支撑结构包括第一支撑构件和第二支撑构件。第一支撑构件包括分别与基板和键帽接合的第一接合轴和第二接合轴。第二支撑构件枢转地连接到第一支撑构件，并且包括分别与基板和键帽接合的第三接合轴和第四接合轴。连接在第一和第二接合轴的重心之间的线不垂直于第一和第二接合轴。连接在第三和第四接合轴的重心之间的线不垂直于第三和第四接合轴。

10. 发明授权

US08581217B2 Method for monitoring ion implantation 有权
标题翻译：监测离子注入的方法
公开(公告)号：US08581217B2
公开(公告)日：2013-11-12
申请号：US12900862
申请日：2010-10-08
申请人： Don Berrian , Cheng-Hui Shen
发明人： Don Berrian , Cheng-Hui Shen
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/3045 , H01J2237/24521 , H01J2237/24542 , H01J2237/30433
摘要： A method capable of monitoring ion implantation. First, an ion beam and a workpiece are provided. Next, implant the workpiece by the ion beam and generate a profile having numerous signals relevant to respectively numerous relative positions between the ion beam and the workpiece, wherein the profile has at least a higher portion, a gradual portion and a lower portion. Therefore, by directly analyzing the profile without referring to a pre-determined profile and without using a profiler measuring the ion beam, some ion beam information may be acquired, such as beam height, beam width, ion beam current distribution on the ion beam cross-section, and so on, and the ion implantation may be monitored real-timely. Furthermore, when numerous workpieces are implanted in sequence, the profile(s) of one or more initially implanted workpiece(s) may be to generate a reference for calibrating the ion implantation of the following workpieces.
摘要翻译：一种能够监测离子注入的方法。首先，提供离子束和工件。接下来，通过离子束植入工件，并产生具有与离子束和工件之间的多个相对位置相关的许多信号的轮廓，其中轮廓具有至少较高部分，渐进部分和下部。因此，通过直接分析轮廓而不参考预定轮廓，并且不使用测量离子束的轮廓仪，可以获得一些离子束信息，例如波束高度，波束宽度，离子束交叉上的离子束电流分布切割等，并可实时监测离子注入。此外，当依次植入许多工件时，一个或多个初始植入的工件的轮廓可以是产生用于校准下列工件的离子注入的参考。

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