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1. 发明申请

US20090194704A1 METHOD AND DEVICE OF ION SOURCE GENERATION 有权
标题翻译：离子源生成的方法和装置
公开(公告)号：US20090194704A1
公开(公告)日：2009-08-06
申请号：US12126312
申请日：2008-05-23
申请人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人： Nai-Yuan CHENG , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号： H01J27/02
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译：注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。因此，浅离子注入的植入效率因此增加。

2. 发明授权

US07687784B2 Method and device of ion source generation 有权
标题翻译：离子源生成方法和装置
公开(公告)号：US07687784B2
公开(公告)日：2010-03-30
申请号：US12126312
申请日：2008-05-23
申请人： Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
发明人： Nai-Yuan Cheng , Yun-Ju Yang , Cheng-Hui Shen , Junhua Hong , Jiong Chen , Tienyu Sheng , Linuan Chen
IPC分类号： H01J7/24 , H01J27/02 , H01J49/10
CPC分类号： H01J37/08 , H01J27/02 , H01J37/3171 , H01J2237/002 , H01J2237/08 , H01J2237/24585
摘要： An implanter is equipped with an ion beam current detector, a temperature sensor, a temperature controller and a cooling system to increase the ratio of a specific ion cluster in the ion source chamber of the implanter. Therefore, the implanting efficiency for a shallow ion implantation is increased consequently.
摘要翻译：注入机配备有离子束电流检测器，温度传感器，温度控制器和冷却系统，以增加注入机的离子源室中的特定离子簇的比例。因此，浅离子注入的植入效率因此增加。

3. 发明授权

US07772571B2 Implant beam utilization in an ion implanter 有权
标题翻译：植入物束在离子注入机中的利用
公开(公告)号：US07772571B2
公开(公告)日：2010-08-10
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10 , H01J37/08 , A61N5/00 , G21G5/00 , G06F19/00
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片来计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

4. 发明申请

US20090090876A1 IMPLANT BEAM UTILIZATION IN AN ION IMPLANTER 有权
标题翻译：在离子植入物中的植入物束的利用
公开(公告)号：US20090090876A1
公开(公告)日：2009-04-09
申请号：US11868851
申请日：2007-10-08
申请人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
发明人： Cheng-Hui Shen , Donald Wayne Berrian , Jiong Chen
IPC分类号： G21K5/10
CPC分类号： G21K5/10 , H01J37/304 , H01J37/3171 , H01J2237/20228 , H01J2237/31703 , H01L21/68764
摘要： To select a scan distance to be used in scanning a wafer with an implant beam, a dose distribution along a first direction is calculated based on size or intensity of the implant beam and a scan distance. The scan distance is the distance measured in the first direction between a first path and a final path of the implant beam scanning the wafer along a second direction in multiple paths. A relative velocity profile along the second direction is determined based on the dose distribution. Dose uniformity on the wafer is calculated based on the wafer being scanned using the relative velocity profile and the determined dose distribution. The scan distance is adjusted and the preceding steps are repeated until the calculated dose uniformity meets one or more uniformity criteria.
摘要翻译：为了选择用于用植入物束扫描晶片的扫描距离，基于植入物束的尺寸或强度以及扫描距离来计算沿着第一方向的剂量分布。扫描距离是在多条路径中沿着第二方向扫描晶片的植入光束的第一路径和最终路径之间的第一方向上测量的距离。基于剂量分布确定沿着第二方向的相对速度分布。基于使用相对速度分布和确定的剂量分布扫描的晶片计算晶片上的剂量均匀性。调整扫描距离，并重复前述步骤，直到计算的剂量均匀性满足一个或多个均匀性标准。

5. 发明授权

US09455363B2 PN structure formed by improved doping methods to simplify manufacturing process of diodes for solar cells 有权
标题翻译： PN结构通过改进的掺杂方法形成，以简化太阳能电池二极管的制造工艺
公开(公告)号：US09455363B2
公开(公告)日：2016-09-27
申请号：US13920077
申请日：2013-06-17
申请人： Jiong Chen , Junhua Hong
发明人： Jiong Chen , Junhua Hong
IPC分类号： H01L31/068 , H01L31/18 , H01L21/265 , H01L21/266
CPC分类号： H01L31/0682 , H01L21/26586 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.
摘要翻译：公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，然后形成具有开放区域的阻挡层。通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

6. 发明申请

US20140366936A1 NEW PN STRUCTURE FORMED BY IMPROVED DOPING METHODS TO SIMPLIFY MANUFACTURING PROCESS OF DIODES FOR SOLAR CELLS 审中-公开
标题翻译：通过改进的掺杂方法形成的新型PN结构简化了太阳能电池二极管的制造工艺
公开(公告)号：US20140366936A1
公开(公告)日：2014-12-18
申请号：US13920077
申请日：2013-06-17
申请人： Jiong Chen , Junhua Hong
发明人： Jiong Chen , Junhua Hong
IPC分类号： H01L31/18 , H01L31/068
CPC分类号： H01L31/0682 , H01L21/26586 , H01L21/266 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer with an open area. An etch process is performed through the open area to remove the layer of the first conductivity type to exposed the top surface of the semiconductor substrate. Dopant ions are introduced to form a dopant region of a second conductivity type on the beneath the top surface of the semiconductor substrate wherein the dopant region of the second conductivity type is not in contact with the dopant layer of the first conductivity type that is not etched off thus forming a PN structure to form diodes for the interdigitated back contact photovoltaic cells. Since the ion doping processes are self-aligned, the mask requirements are minimized and the production cost for solar cells are reduced.
摘要翻译：公开了一种用于掺杂半导体衬底的方法，其中首先形成第一导电类型的层，随后形成具有开放区域的阻挡层。通过开放区域进行蚀刻处理以去除第一导电类型的层以暴露半导体衬底的顶表面。引入掺杂离子以在半导体衬底的顶表面下方形成第二导电类型的掺杂区，其中第二导电类型的掺杂区不与未蚀刻的第一导电类型的掺杂剂层接触从而形成PN结构以形成用于叉指式背接触光伏电池的二极管。由于离子掺杂工艺是自对准的，所以掩模要求最小化，太阳能电池的生产成本降低。

7. 发明申请

US20100237260A1 Ion implantation systems 有权
标题翻译：离子注入系统
公开(公告)号：US20100237260A1
公开(公告)日：2010-09-23
申请号：US12661523
申请日：2010-03-18
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/05 , H01J37/3171 , H01J2237/047 , H01J2237/31701
摘要： An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.
摘要翻译：本发明公开了一种高能离子注入装置。新的和改进的系统可以在远光透射率下具有广泛的离子束能量和对于不同的离子种类具有灵活的操作模式。这种高能量注入系统可以通过去除RF线性离子加速单元而转换为中等电流。

8. 发明申请

US20080230712A1 BEAM CONTROL ASSEMBLY FOR RIBBON BEAM OF IONS FOR ION IMPLANTATION 有权
标题翻译：用于离子植入的离子束束的束控制组件
公开(公告)号：US20080230712A1
公开(公告)日：2008-09-25
申请号：US12053076
申请日：2008-03-21
申请人： Jiong Chen
发明人： Jiong Chen
IPC分类号： H01J3/14 , G21K5/04
CPC分类号： H01J37/32669 , G21K1/093 , G21K5/04 , H01J37/1471 , H01J37/3007 , H01J37/3171 , H01J37/3172 , H01J2237/24542
摘要： A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.
摘要翻译：用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。第一线圈设置在第一杆上。第一线圈是设置在第一条上的唯一线圈。第二杆与第一杆相对地设置，在第一和第二杆之间限定间隙。带状光束在间隙之间传播。第二线圈设置在第二杆上。第二线圈是设置在第二杆上的唯一线圈。第一电源连接到第一线圈而不与任何其它线圈电连接。第二电源连接到第二线圈而不与任何其它线圈电连接。

9. 发明授权

US06806479B1 Apparatus and method for reducing implant angle variations across a large wafer for a batch disk 有权
标题翻译：用于减少用于批盘的大晶片上的植入角度变化的装置和方法
公开(公告)号：US06806479B1
公开(公告)日：2004-10-19
申请号：US10641219
申请日：2003-08-13
申请人： Zhimin Wan , Jiong Chen , John D. Pollock
发明人： Zhimin Wan , Jiong Chen , John D. Pollock
IPC分类号： H01J3720
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/201 , H01J2237/20214
摘要： A method to rotate individual pad of a batch disk to an implant angle and lock them in place, with the pad surface having conical or near conical surface to minimize the implant angle variation across a wafer on the pad for both tilt angle and twist angle, at large tilt angle implant. The implanter includes a disk with multiple attached pads that can hold substrates securely when the hub is at rest or rotates. The disk rotates around its spin axis, which moves laterally at a programmed speed profile so that all substrates on the hub can get evenly touched by the fixed ion beam. The pad rotation axis is at an angle with the disk spin axis, and the angle is preferable 90 degrees. The nominal of the pad surface is at an angle, i.e., a tilt angle, relative to the incident ion beam. A rotation mechanism is applied to each individual pad to rotate the pad to the desired tilt angle. A locking mechanism is applied to each individual pad assembly to lock the pad at the desired tilt angle with minimum angle variation under high centrifugal force during fast disk spin. The locking mechanism includes: a) add brake to the rotation mechanism in the pad assembly so that the pad cannot rotate due to mechanical friction force or lock-key. B) use motor to hold the pad assembly. The sum of the friction torque and the motor holding torque should be larger than the centrifugal torque. A torque balancing mechanism is applied to pad mechanical design to minimize the total pad rotation torque under centrifugal force during fast disk spin by adding mass to counter balance the original wafer pad mass.
摘要翻译：一种将批盘的单个垫片旋转到植入角度并将其锁定在适当位置的方法，其中垫表面具有圆锥形或近圆锥形表面，以最小化用于倾斜角度和扭转角度的衬垫上的晶片上的植入角度变化，在大倾角植入。注入机包括具有多个附接垫的盘，当轮毂处于静止或转动时，该盘可以牢固地保持衬底。磁盘围绕其旋转轴旋转，其以编程的速度轮廓横向移动，使得轮毂上的所有基底可以被固定的离子束均匀地接触。衬垫旋转轴与盘旋转轴成一定角度，该角度优选为90度。焊盘表面的标称是相对于入射离子束成一定角度，即倾斜角。旋转机构被施加到每个单独的垫以将垫旋转到期望的倾斜角。将锁定机构应用于每个单独的垫组件，以在快速盘旋转期间在高离心力下以最小的角度变化将垫锁定在期望的倾斜角度。该锁定机构包括：a）向衬垫组件中的旋转机构添加制动器，使得垫片由于机械摩擦力或锁定键不能旋转。 B）使用马达来固定垫组件。摩擦转矩和电机保持转矩的总和应大于离心力矩。应用扭矩平衡机构进行垫片机械设计，以通过增加质量来平衡原始晶片垫块，从而在快速盘旋转期间在离心力下最小化总垫片旋转扭矩。

10. 发明授权

US06710358B1 Apparatus and method for reducing energy contamination of low energy ion beams 失效
标题翻译：降低能量离子束能量污染的装置和方法
公开(公告)号：US06710358B1
公开(公告)日：2004-03-23
申请号：US09513396
申请日：2000-02-25
申请人： Jiong Chen , Peiching Ling
发明人： Jiong Chen , Peiching Ling
IPC分类号： G21K510
CPC分类号： H01J37/3171 , H01J2237/05
摘要： An ion implantation method for reducing energy contamination in low energy beams is disclosed in this invention. The ion implantation method requires the use of a target chamber for containing a target for implantation in vacuum and an ion source chamber with an ion source for generating an ion beam. A means for conducting a mass analysis of the ion beam, such as an analyzer magnet, is also needed. The ion source chamber includes a beam deceleration optics that includes a beam deceleration means for decelerating the ion beam for producing a low energy ion beam. The beam deceleration optics further includes a beam steering means for generating an electrostatic field for steering the ion beam to a targeted ion-beam direction and separating neutralized particles from the ion beam by allowing the neutralized particles to transmit in a neutralized-particle direction slightly different from the targeted ion-beam direction. The ion beam steering means further includes a beam stopper for blocking said neutralized particles from reaching said target of implantation that minimizes energy contamination from high energy neutralized particles.
摘要翻译：在本发明中公开了一种用于减少能量束中的能量污染的离子注入方法。离子注入方法需要使用目标室来容纳用于在真空中注入的靶和具有用于产生离子束的离子源的离子源室。还需要用于进行离子束的质量分析的装置，例如分析器磁体。离子源室包括光束减速光学器件，其包括用于减小离子束以产生低能量离子束的光束减速装置。光束减速光学元件进一步包括光束转向装置，用于产生用于将离子束转向目标离子束方向的静电场，并且通过允许中和的颗粒在中和颗粒方向上稍微不同的透射从离子束分离中和的颗粒从目标离子束方向。离子束转向装置还包括用于阻挡所述被中和的颗粒到达所述注入目标的束塞，其最小化来自高能中和颗粒的能量污染。

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