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1. 发明授权

US08470462B2 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions 有权
标题翻译：在CoFe（B）/ MgO / CoFe（B）磁隧道结中增强界面垂直各向异性的结构和方法
公开(公告)号：US08470462B2
公开(公告)日：2013-06-25
申请号：US12927939
申请日：2010-11-30
申请人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
发明人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
IPC分类号： G11B5/706 , H01L43/08 , G01R33/09 , G11C11/16
CPC分类号： C23C14/3414 , B82Y40/00 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.
摘要翻译：公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

2. 发明申请

US20120135273A1 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) Magnetic Tunnel Junctions 有权
标题翻译：提高CoFe（B）/ MgO / CoFe（B）磁隧道结界面垂直各向异性的结构与方法
公开(公告)号：US20120135273A1
公开(公告)日：2012-05-31
申请号：US12927939
申请日：2010-11-30
申请人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
发明人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
IPC分类号： G11B5/706 , B05D5/00 , C23C14/34
CPC分类号： C23C14/3414 , B82Y40/00 , G11C11/161 , H01F10/3259 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.
摘要翻译：公开了具有通过自然氧化工艺形成的MgO隧道势垒的STT-RAM MTJ。使用NCO是由Fe（20％） - SiO 2制成的纳米电流通道层的Co10Fe70B20 / NCC / Co10Fe70B20，Co10Fe70B20 / NCC / Co10Fe70B20 / NCC或Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20 / NCC / Co10Fe70B20自由层配置，以使Jc0最小化实现满足64Mb设计要求的更高的热稳定性，写电压，读电压，Ho和Hc值。 NCC层的厚度约为10埃，以符合最小Fe（Si）晶粒直径尺寸。 MTJ在约330℃的温度下退火，以保持高的磁阻比，同时使自由层的Hk⊥（界面）最大化，从而降低Heff并降低开关电流。 Co10Fe70B20层用低压工艺溅射沉积，功率约为15瓦，Ar流速为40标准立方厘米每分钟，以降低自由层的Heff。

3. 发明授权

US08900884B2 MTJ element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US08900884B2
公开(公告)日：2014-12-02
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

4. 发明授权

US08698260B2 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
标题翻译：具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用
公开(公告)号：US08698260B2
公开(公告)日：2014-04-15
申请号：US13548859
申请日：2012-07-13
申请人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10
摘要： A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.
摘要翻译：公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量磁性隧道结中的稳定性。自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

5. 发明申请

US20130334629A1 MTJ Element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US20130334629A1
公开(公告)日：2013-12-19
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

6. 发明申请

US20130270523A1 Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
标题翻译：通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层
公开(公告)号：US20130270523A1
公开(公告)日：2013-10-17
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

7. 发明授权

US08969982B2 Bottom electrode for MRAM device 有权
标题翻译： MRAM器件底电极
公开(公告)号：US08969982B2
公开(公告)日：2015-03-03
申请号：US12927670
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L29/82 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
摘要翻译：描述了用于氮化硅衬底上的MTJ器件的多层底电极。它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

8. 发明授权

US08456893B2 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current 有权
标题翻译：磁隧道结（MTJ）降低自旋转移磁化开关电流
公开(公告)号：US08456893B2
公开(公告)日：2013-06-04
申请号：US12584971
申请日：2009-09-15
申请人： Cheng T. Horng , Ru-Ying Tong
发明人： Cheng T. Horng , Ru-Ying Tong
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , H01L43/12
摘要： A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to
摘要翻译：公开了将旋转RAM中的自旋转移磁化开关电流（Jc）最小化为<1×106A / cm 2的MTJ。 MTJ具有Co60Fe20B20 / MgO / Co60Fe20B20配置，其中CoFeB AP1钉扎和自由层是无定形的，并且通过ROX或NOX工艺形成结晶MgO隧道势垒。覆盖层优选为Hf / Ru复合材料，其中下部Hf层用作优异的吸氧材料，以减少自由层/覆盖层界面处的磁性“死层”，从而增加dR / R，并降低He和Jc 。退火温度降低至约280℃，以产生比350℃退火更平滑的CoFeB / MgO界面和较小的偏移场。在第二实施例中，AP1层具有CoFeB / CoFe构型，其中下CoFeB层是非晶的，并且上CoFe层是结晶的，以进一步提高dR / R，并将RA降低到10欧姆/ m 2。

9. 发明授权

US08436437B2 High performance MTJ elements for STT-RAM and method for making the same 有权
标题翻译：用于STT-RAM的高性能MTJ元件和制作相同的方法
公开(公告)号：US08436437B2
公开(公告)日：2013-05-07
申请号：US12803191
申请日：2010-06-21
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3272 , H01F10/329 , H01F10/3295 , H01F41/307 , H01L43/10 , H01L43/12
摘要： A STT-MTJ MRAM cell that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer includes an IrMn pinning layer, a SyAP pinned layer, a naturally oxidized, crystalline MgO tunneling barrier layer that is formed on an Ar-ion plasma smoothed surface of the pinned layer and a free layer that comprises an amorphous layer of Co60Fe20B20 of approximately 20 angstroms thickness or an amorphous ferromagnetic layer of Co40Fe40B20 of approximately 15 angstroms thickness formed between two crystalline layers of Fe of 3 and 6 angstroms thickness respectively. The free layer is characterized by a low Gilbert damping factor and by very strong polarizing action on conduction electrons. The resulting cell has a low critical current, a high dR/R and a plurality of such cells will exhibit a low variation of both resistance and pinned layer magnetization angular dispersion.
摘要翻译：利用自旋角度动量的转移作为改变自由层的磁矩方向的机构的STT-MTJ MRAM单元包括IrMn钉扎层，SyAP钉扎层，自然氧化的结晶的MgO隧穿势垒层，其形成于被钉扎层的Ar离子等离子体平滑表面和包含大约20埃厚度的Co60Fe20B20的非晶层的自由层或者在3和6的Fe的两个结晶层之间形成约15埃厚度的Co40Fe40B20的非晶铁磁层埃厚度。自由层的特征在于低吉尔伯特阻尼因子和对传导电子的非常强的偏振作用。所得到的电池具有低临界电流，高dR / R，并且多个这样的电池将呈现电阻和钉扎层磁化角分散的低变化。

10. 发明授权

US08273666B2 Process to fabricate bottom electrode for MRAM device 有权
标题翻译：制造MRAM器件底电极的工艺
公开(公告)号：US08273666B2
公开(公告)日：2012-09-25
申请号：US12927615
申请日：2010-11-19
申请人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
发明人： Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： Formation of a bottom electrode for an MTJ device on a silicon nitride substrate is facilitated by including a protective coating that is partly consumed during etching of the alpha tantalum portion of said bottom electrode. Adhesion to SiN is enhanced by using a TaN/NiCr bilayer as “glue”.
摘要翻译：在氮化硅衬底上形成用于MTJ器件的底部电极通过包括在所述底部电极的α钽部分的蚀刻期间部分消耗的保护涂层来促进。通过使用TaN / NiCr双层作为“胶”来增强对SiN的附着力。

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