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1. 发明授权

US08900884B2 MTJ element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US08900884B2
公开(公告)日：2014-12-02
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L21/00 , H01L29/82
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

2. 发明授权

US08698260B2 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
标题翻译：具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用
公开(公告)号：US08698260B2
公开(公告)日：2014-04-15
申请号：US13548859
申请日：2012-07-13
申请人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10
摘要： A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.
摘要翻译：公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量磁性隧道结中的稳定性。自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

3. 发明申请

US20130334629A1 MTJ Element for STT MRAM 有权
标题翻译： STT MRAM的MTJ元素
公开(公告)号：US20130334629A1
公开(公告)日：2013-12-19
申请号：US13525502
申请日：2012-06-18
申请人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
发明人： Witold Kula , Ru-Ying Tong , Guenole Jan , Yu-Jen Wang
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.
摘要翻译：公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

4. 发明申请

US20130270523A1 Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer 有权
标题翻译：通过插入硼粉尘层的磁性器件应用具有高热稳定性的自由层
公开(公告)号：US20130270523A1
公开(公告)日：2013-10-17
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L43/10 , H01L43/12
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

5. 发明授权

US08860156B2 Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM 有权
标题翻译： STT-MRAM具有垂直磁各向异性的最小厚度合成反铁磁（SAF）结构
公开(公告)号：US08860156B2
公开(公告)日：2014-10-14
申请号：US13609780
申请日：2012-09-11
申请人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Robert Beach , Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/02 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F41/307 , H01L27/222 , H01L27/224 , H01L29/82 , H01L43/10
摘要： A synthetic antiferromagnetic (SAF) structure for a spintronic device is disclosed and has an AP2/antiferromagnetic (AF) coupling/CoFeB configuration. The SAF structure is thinned to reduce the fringing (Ho) field while maintaining high coercivity. The AP2 reference layer has intrinsic perpendicular magnetic anisotropy (PMA) and induces PMA in a thin CoFeB layer through AF coupling. In one embodiment, AF coupling is improved by inserting a Co dusting layer on top and bottom surfaces of a Ru AF coupling layer. When AP2 is (Co/Ni)4, and CoFeB thickness is 7.5 Angstroms, Ho is reduced to 125 Oe, Hc is 1000 Oe, and a balanced saturation magnetization-thickness product (Mst)=0.99 is achieved. The SAF structure may also be represented as FL2/AF coupling/CoFeB where FL2 is a ferromagnetic layer with intrinsic PMA.
摘要翻译：公开了一种用于自旋电子器件的合成反铁磁（SAF）结构，并具有AP2 /反铁磁（AF）耦合/ CoFeB配置。 SAF结构变薄以减少边缘（Ho）场，同时保持高矫顽力。 AP2参考层具有固有的垂直磁各向异性（PMA），并通过AF耦合在薄CoFeB层中诱导PMA。在一个实施例中，通过在Ru AF耦合层的顶表面和底表面上插入Co除尘层来改善AF耦合。当AP2为（Co / Ni）4，CoFeB厚度为7.5埃时，Ho降至125Oe，Hc为1000Oe，平衡饱和磁化强度产物（Mst）= 0.99。 SAF结构也可以表示为FL2 / AF耦合/ CoFeB，其中FL2是具有固有PMA的铁磁层。

6. 发明授权

US08710603B2 Engineered magnetic layer with improved perpendicular anisotropy using glassing agents for spintronic applications 有权
标题翻译：具有改进的垂直各向异性的工程磁性层，使用玻璃化剂进行自旋电子应用
公开(公告)号：US08710603B2
公开(公告)日：2014-04-29
申请号：US13408555
申请日：2012-02-29
申请人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
发明人： Guenole Jan , Yu-Jen Wang , Ru-Ying Tong
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：公开了一种磁性元件，其中具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以增加磁性隧道结（MTJ）中的热稳定性。自由层可以是单层或复合物，并且由一个或多个在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。结果，例如，CoFeB自由层沿着第一界面和第二界面选择性地结晶，但是在含有提供退火温度的玻璃试剂的中间区域中保持无定形特征小于中间区域的结晶温度。磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

7. 发明授权

US08508006B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US08508006B2
公开(公告)日：2013-08-13
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

8. 发明申请

US20120299134A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 有权
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20120299134A1
公开(公告)日：2012-11-29
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L21/46
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

9. 发明授权

US08852760B2 Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer 有权
标题翻译：通过插入硼粉尘层，磁性器件应用具有高热稳定性的自由层
公开(公告)号：US08852760B2
公开(公告)日：2014-10-07
申请号：US13448557
申请日：2012-04-17
申请人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
发明人： Yu-Jen Wang , Witold Kula , Ru-Ying Tong , Guenole Jan
IPC分类号： H01L29/82 , G01R33/09 , G11B5/39
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能。每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

10. 发明申请

US20140077318A1 Storage Element for STT MRAM Applications 有权
标题翻译： STT MRAM应用的存储元件
公开(公告)号：US20140077318A1
公开(公告)日：2014-03-20
申请号：US13617432
申请日：2012-09-14
申请人： Witold Kula , Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Witold Kula , Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.
摘要翻译：描述了改进的PMA STT MTJ存储元件及其形成方法。通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

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