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1. 发明授权

US6064511A Fabrication methods and structured materials for photonic devices 失效
标题翻译：光子器件的制作方法和结构材料
公开(公告)号：US6064511A
公开(公告)日：2000-05-16
申请号：US052848
申请日：1998-03-31
申请人： Charles M. Fortmann , John H. Coleman , Serge Luryi , Ronald J. Tonucci
发明人： Charles M. Fortmann , John H. Coleman , Serge Luryi , Ronald J. Tonucci
IPC分类号： C30B25/02 , G02B6/122 , G02F1/017 , G02B1/12
CPC分类号： C30B25/02 , B82Y20/00 , C30B29/60 , G02B6/1225
摘要： Structured materials for photonic devices, at wavelengths of X-ray, ultraviolet, visible, infrared and microwave radiation, can be made using layer growth techniques. Such a structure can be made layer by layer, by homogeneous deposition followed by localized modification for refractive index differentiation. Alternatively, the structure can be made by simultaneous growth of regions whose refractive index differs. The structures can be used as selective bandpass filters, and in photovoltaic solar cells, for example.
摘要翻译：在X射线，紫外线，可见光，红外和微波辐射的波长处的光子器件的结构材料可以使用层生长技术制成。这种结构可以逐层地进行，通过均匀沉积，然后进行折射率分化的局部修饰。或者，可以通过折射率不同的区域的同时生长来制造该结构。该结构可以用作选择性带通滤波器，例如在光伏太阳能电池中。

2. 发明授权

US08664612B2 Layered semiconductor scintillator 有权
标题翻译：层状半导体闪烁体
公开(公告)号：US08664612B2
公开(公告)日：2014-03-04
申请号：US13316706
申请日：2011-12-12
申请人： Serge Luryi , Arsen Subashiev
发明人： Serge Luryi , Arsen Subashiev
IPC分类号： G01T1/20 , G01T1/00
CPC分类号： G01T1/20 , G01T1/2018
摘要： A scintillator detector of high-energy radiation comprising a semiconductor slab that is composed of alternating layers of barrier and well material. The barrier and well material layers are direct bandgap semiconductors. Bandgap of the well material is smaller than the bandgap of the barrier material. The combined thickness of the well layers is substantially less than the total thickness of said slab. The thickness of the barrier layers is substantially larger than the diffusion length of minority carriers. The thickness of the well layers is sufficiently large to absorb most of the incident scintillating radiation generated in the barrier layers in response to an ionization event from interaction with an incident high-energy particle.
摘要翻译：一种高能辐射的闪烁体检测器，包括由阻挡层和阱材料的交替层组成的半导体板。阻挡层和阱材料层是直接带隙半导体。阱材料的带隙小于阻挡材料的带隙。井层的组合厚度基本上小于所述板坯的总厚度。阻挡层的厚度基本上大于少数载流子的扩散长度。阱层的厚度足够大以响应于与入射的高能粒子相互作用的电离事件来吸收在阻挡层中产生的大部分入射的闪烁辐射。

3. 发明授权

US07326637B2 Method and system for bonding a semiconductor chip onto a carrier using micro-pins 失效
标题翻译：使用微针将半导体芯片接合到载体上的方法和系统
公开(公告)号：US07326637B2
公开(公告)日：2008-02-05
申请号：US11337780
申请日：2006-01-23
申请人： Sangmin Lee , Michael Gurvitch , Serge Luryi
发明人： Sangmin Lee , Michael Gurvitch , Serge Luryi
IPC分类号： H01L21/44
CPC分类号： H05K3/325 , H01L21/486 , H01L23/49827 , H01L24/29 , H01L24/83 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/1305 , H01L2924/14 , H01L2924/1579 , H01L2924/19042 , H05K3/3436 , H05K2201/10378 , H01L2924/00015 , H01L2224/13099 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599 , H01L2224/05099
摘要： An anisotropically conductive layer ‘ACL’ for mechanical and electrical bonding of two circuit containing structures, such as a flip chip and carrier is disclosed. The ACL is formed of a rigid insulating substrate or membrane with a top and bottom planar surfaces formed with a plurality of pins therein. The pins extend beyond the top and bottom surfaces so that a portion of each pin is exposed. The pins provide electrical connection between contact terminals or pads of the flip chip and carrier and additionally provide mechanical support between the flip chip and carrier so that the flip chip can undergo post-bonding processing without substantial deformation or breaking. A method of electrically and mechanically bonding the flip chip and carrier and a method of making a semiconductor device using the ACL is also disclosed.
摘要翻译：公开了一种用于包括倒装芯片和载体的两个电路结构的机械和电气结合的各向异性导电层“ACL”。 ACL由刚性绝缘衬底或膜形成，其中顶部和底部平坦表面在其中形成有多个销。销延伸超过顶表面和底表面，使得每个销的一部分被暴露。引脚在倒装芯片和载体的接触端子或焊盘之间提供电连接，并且另外在倒装芯片和载体之间提供机械支撑，使得倒装芯片可以进行后接合处理而没有实质的变形或断裂。还公开了一种电气和机械地结合倒装芯片和载体的方法以及使用该ACL制造半导体器件的方法。

4. 发明授权

US06944407B2 Method and apparatus for detecting radiation 失效
标题翻译：用于检测辐射的方法和装置
公开(公告)号：US06944407B2
公开(公告)日：2005-09-13
申请号：US10322293
申请日：2002-12-18
申请人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
发明人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
IPC分类号： G01J3/443 , G01N21/64 , G01N21/65 , H04B10/06 , H04B10/158
CPC分类号： G01N21/64
摘要： In analyzing radiation from a communication link, single-photon counting can be used to advantage especially at low levels of radiation energy, e.g. in the detection of optical radiation. Preferred detection techniques include methods in which (i) received optical radiation is intensity-modulated in accordance with a preselected code, (ii) wherein it is the optical radiation which is intensity-modulated with the preselected code, and (iii) wherein the radiation modulated with a preselected code is received. For registration of the signals received by a sensing element of a single-photon detector, time of arrival is recorded, optionally in conjunction with registration of time intervals. Advantageously, in the interest of minimizing the number of pulses missed due to close temporal spacing of pulses, D-triggers can be included in counting circuitry.
摘要翻译：在分析来自通信链路的辐射时，单光子计数可以用于特别是在低水平的辐射能量下，例如，在检测光辐射。优选的检测技术包括以下方法：其中（i）接收的光辐射是根据预先选择的码进行强度调制的，（ii）其中是用预选码强度调制的光辐射，以及（iii）其中辐射接收到用预先选择的码进行调制。为了注册由单光子检测器的感测元件接收的信号，可以随时间记录，记录到达时间。有利地，为了最小化由于脉冲的紧密时间间隔而丢失的脉冲数，D触发可以包括在计数电路中。

5. 发明授权

US06370560B1 Load sharing controller for optimizing resource utilization cost 失效
标题翻译：负载共享控制器，优化资源利用成本
公开(公告)号：US06370560B1
公开(公告)日：2002-04-09
申请号：US09042132
申请日：1998-03-13
申请人： Thomas G. Robertazzi , Serge Luryi , Saravut Charcranoon
发明人： Thomas G. Robertazzi , Serge Luryi , Saravut Charcranoon
IPC分类号： G06F900
CPC分类号： G06F9/5088 , G06F9/5066
摘要： A load sharing system which minimizes overall costs by assigning segments of a divisible load to distributed processor platforms based on the resource utilization cost of each processor platform. The distributed processor platforms are connected via data links which also have associated resource utilization costs. A controller divides a divisible load or task and assigns each segment of the load or task to a processor platform based on the processor platform's resource utilization cost and data link cost. After the initial allocation, an optimizing reallocation is performed to reduce the overall monetary cost processing the load or task. The optimization can be performed using a pair-wise swapping technique.
摘要翻译：一种负载共享系统，其通过基于每个处理器平台的资源利用成本将可分割负载的分段分配给分布式处理器平台来最小化总体成本。分布式处理器平台通过也具有相关资源利用成本的数据链路连接。控制器划分可分割的负载或任务，并根据处理器平台的资源利用成本和数据链路成本将负载或任务的每个段分配给处理器平台。在初始分配之后，执行优化重新分配以减少处理负载或任务的总体货币成本。可以使用成对互换技术来执行优化。

6. 发明申请

US20090242932A1 Large-area pin diode with reduced capacitance 有权
标题翻译：具有降低电容的大面积二极管
公开(公告)号：US20090242932A1
公开(公告)日：2009-10-01
申请号：US12383665
申请日：2009-03-26
申请人： Serge Luryi
发明人： Serge Luryi
IPC分类号： H01L31/0216 , H01L21/20
CPC分类号： H01L31/02322 , H01L27/14663 , H01L31/022408 , H01L31/085
摘要： The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks interconnected by narrow metallic runners at a different structural level separated from the collector discs by an interlevel dielectric.
摘要翻译：本发明提供具有低电容和大面积有效收集光电荷的PIN二极管的设计。低电容是通过用狭窄的金属流道相互连接的稀疏阵列的集电盘取代二极管中的连续集电极而获得的，该集电极与层间绝缘电介质与集电盘分开。

7. 发明申请

US20060186541A1 Method and system for bonding a semiconductor chip onto a carrier using micro-pins 失效
标题翻译：使用微针将半导体芯片接合到载体上的方法和系统
公开(公告)号：US20060186541A1
公开(公告)日：2006-08-24
申请号：US11337780
申请日：2006-01-23
申请人： Sangmin Lee , Michael Gurvitch , Serge Luryi
发明人： Sangmin Lee , Michael Gurvitch , Serge Luryi
IPC分类号： H01L23/48
CPC分类号： H05K3/325 , H01L21/486 , H01L23/49827 , H01L24/29 , H01L24/83 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1134 , H01L2224/131 , H01L2224/16 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/1305 , H01L2924/14 , H01L2924/1579 , H01L2924/19042 , H05K3/3436 , H05K2201/10378 , H01L2924/00015 , H01L2224/13099 , H01L2924/00 , H01L2924/3512 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/05599 , H01L2224/05099
摘要： An anisotropically conductive layer ‘ACL’ for mechanical and electrical bonding of two circuit containing structures, such as a flip chip and carrier is disclosed. The ACL is formed of a rigid insulating substrate or membrane with a top and bottom planar surfaces formed with a plurality of pins therein. The pins extend beyond the top and bottom surfaces so that a portion of each pin is exposed. The pins provide electrical connection between contact terminals or pads of the flip chip and carrier and additionally provide mechanical support between the flip chip and carrier so that the flip chip can undergo post-bonding processing without substantial deformation or breaking. A method of electrically and mechanically bonding the flip chip and carrier and a method of making a semiconductor device using the ACL is also disclosed.
摘要翻译：公开了一种用于包括倒装芯片和载体的两个电路结构的机械和电气结合的各向异性导电层“ACL”。 ACL由刚性绝缘衬底或膜形成，其中顶部和底部平坦表面在其中形成有多个销。销延伸超过顶表面和底表面，使得每个销的一部分被暴露。引脚在倒装芯片和载体的接触端子或焊盘之间提供电连接，并且另外在倒装芯片和载体之间提供机械支撑，使得倒装芯片可以进行后接合处理而没有实质的变形或断裂。还公开了一种电气和机械地结合倒装芯片和载体的方法以及使用该ACL制造半导体器件的方法。

8. 发明申请

US20060056466A1 Semiconductor light source with electrically tunable emission wavelength 有权
标题翻译：具有电可调谐发射波长的半导体光源
公开(公告)号：US20060056466A1
公开(公告)日：2006-03-16
申请号：US11206505
申请日：2005-08-18
申请人： Gregory Belenky , John Bruno , Mikhail Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard Tober
发明人： Gregory Belenky , John Bruno , Mikhail Kisin , Serge Luryi , Leon Shterengas , Sergey Suchalkin , Richard Tober
IPC分类号： H01S3/10
CPC分类号： H01S5/0622 , B82Y20/00 , H01S5/322 , H01S5/3401 , H01S5/3402 , H01S5/3422
摘要： A semiconductor light source is disclosed comprising a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. Radiative recombination occurs between the electrons and holes, accumulated in the ground states of the triangular potential wells formed in the high- and low-affinity layers of each active region periods. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.
摘要翻译：公开了一种半导体光源，其包括基底，下部和上部包层，具有嵌入的有源区的波导区和用于提供波长调谐所需的电压的电触点。有源区包括夹在电荷累积层之间的单个或多个异质结期。每个有源区周期包括具有II型带对准的更高和更低的亲和力半导体层。电荷累积层中的电荷载流子积累导致电场积聚，并导致在较高和较低亲和层中形成大致三角形的电子和空穴势阱。可以通过电注入或光泵浦在有源区域中产生非平衡载流子。辐射复合发生在电子和空穴之间，累积在每个有效区域周期的高亲和力层和低亲和层中形成的三角势阱的基态中。可以通过改变有源区域上的电压降来调整三角形阱中的基态能量和辐射波长。

9. 发明授权

US06819696B1 Intersubband semiconductor lasers with enhanced subband depopulation rate 失效
标题翻译：带子半导体激光器具有增强的子带压缩率
公开(公告)号：US06819696B1
公开(公告)日：2004-11-16
申请号：US09957531
申请日：2001-09-21
申请人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
发明人： Gregory Belenky , Mitra Dutta , Mikhail Kisin , Serge Luryi , Michael Stroscio
IPC分类号： H01S500
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S2301/173
摘要： Intersubband semiconductor lasers (ISLs) are of great interest for mid-infrared (2-20 &mgr;m) device applications. These semiconductor devices have a wide range of applications from pollution detection and industrial monitoring to military functions. ISLs have generally encountered several problems which include slow intrawell intersubband relaxation times due to the large momentum transfer and small wave-function overlap of the initial and final electron states in interwell transitions. Overall, the ISL's of the prior art are subject to weak intersubband population inversion. The semiconductor device of the present invention provides optimal intersubband population inversion by providing a double quantum well active region in the semiconductor device. This region allows for small momentum transfer in the intersubband electron-phonon resonance with the substantial wave-function overlap characteristic of the intersubband scattering.
摘要翻译： Intersubband半导体激光器（ISL）对于中红外（2-20mum）器件应用非常有兴趣。这些半导体器件具有从污染检测和工业监测到军事功能的广泛应用.ISL通常遇到几个问题，包括由于大的动量传递而引起的慢内插子带松弛时间，以及初始和最终电子的小波函数重叠状态在井间转变。总的来说，现有技术的ISL具有弱的子带内群体反转。本发明的半导体器件通过在半导体器件中提供双量子阱有源区域来提供最佳的子带间群体反转。该区域允许子带内电子 - 声子共振中的小动量传递与子带间散射的基本波函数重叠特性。

10. 发明授权

US06528801B1 Method and apparatus for detecting radiation 有权
公开(公告)号：US06528801B1
公开(公告)日：2003-03-04
申请号：US09186248
申请日：1998-11-04
申请人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
发明人： Serge Luryi , Vera Gorfinkel , Mikhail Gouzman
IPC分类号： G91N2164
CPC分类号： G01N21/64
摘要： In analyzing radiation from a sample, single-quanta counting can be used to advantage especially at low levels of radiation energy, e.g. in the detection of fluorescent radiation. Preferred detection techniques include methods in which (i) fluorescence-stimulating radiation is intensity-modulated in accordance with a preselected code, (ii) wherein it is the fluorescent radiation which is intensity-modulated with the preselected code, and (iii) wherein modulation with a preselected code is applied to a sample to influence a property which functionally affects emitted fluorescent radiation. For registration of the signals from a sensing element of a single-photon detector, time of arrival is recorded, optionally in conjunction with registration of time intervals. Advantageously, in the interest of minimizing the number of pulses missed due to close temporal spacing of pulses, D-triggers can be included in counting circuitry.

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