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1. 发明授权

US08664612B2 Layered semiconductor scintillator 有权
标题翻译：层状半导体闪烁体
公开(公告)号：US08664612B2
公开(公告)日：2014-03-04
申请号：US13316706
申请日：2011-12-12
申请人： Serge Luryi , Arsen Subashiev
发明人： Serge Luryi , Arsen Subashiev
IPC分类号： G01T1/20 , G01T1/00
CPC分类号： G01T1/20 , G01T1/2018
摘要： A scintillator detector of high-energy radiation comprising a semiconductor slab that is composed of alternating layers of barrier and well material. The barrier and well material layers are direct bandgap semiconductors. Bandgap of the well material is smaller than the bandgap of the barrier material. The combined thickness of the well layers is substantially less than the total thickness of said slab. The thickness of the barrier layers is substantially larger than the diffusion length of minority carriers. The thickness of the well layers is sufficiently large to absorb most of the incident scintillating radiation generated in the barrier layers in response to an ionization event from interaction with an incident high-energy particle.
摘要翻译：一种高能辐射的闪烁体检测器，包括由阻挡层和阱材料的交替层组成的半导体板。阻挡层和阱材料层是直接带隙半导体。阱材料的带隙小于阻挡材料的带隙。井层的组合厚度基本上小于所述板坯的总厚度。阻挡层的厚度基本上大于少数载流子的扩散长度。阱层的厚度足够大以响应于与入射的高能粒子相互作用的电离事件来吸收在阻挡层中产生的大部分入射的闪烁辐射。

2. 发明申请

US20120161015A1 Layered Semiconductor Scintillator 有权
标题翻译：分层半导体闪烁体
公开(公告)号：US20120161015A1
公开(公告)日：2012-06-28
申请号：US13316706
申请日：2011-12-12
申请人： Serge Luryi , Arsen Subashiev
发明人： Serge Luryi , Arsen Subashiev
IPC分类号： G01T1/20
CPC分类号： G01T1/20 , G01T1/2018
摘要： A scintillator detector of high-energy radiation comprising a semiconductor slab that is composed of alternating layers of barrier and well material. The barrier and well material layers are direct bandgap semiconductors. Bandgap of the well material is smaller than the bandgap of the barrier material. The combined thickness of the well layers is substantially less than the total thickness of said slab. The thickness of the barrier layers is substantially larger than the diffusion length of minority carriers. The thickness of the well layers is sufficiently large to absorb most of the incident scintillating radiation generated in the barrier layers in response to an ionization event from interaction with an incident high-energy particle.
摘要翻译：一种高能量辐射的闪烁体检测器，包括由阻挡层和阱材料的交替层组成的半导体板。阻挡层和阱材料层是直接带隙半导体。阱材料的带隙小于阻挡材料的带隙。井层的组合厚度基本上小于所述板坯的总厚度。阻挡层的厚度基本上大于少数载流子的扩散长度。阱层的厚度足够大以响应于与入射的高能粒子相互作用的电离事件来吸收在阻挡层中产生的大部分入射的闪烁辐射。

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