会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Semiconductor laser device and method for manufacturing the same
    • 半导体激光装置及其制造方法
    • US5504768A
    • 1996-04-02
    • US161422
    • 1993-12-06
    • Chan-Yong ParkJi-Beom YooKyung-Hyun ParkHong-Man KimDong-Hoon JangJung-Kee Lee
    • Chan-Yong ParkJi-Beom YooKyung-Hyun ParkHong-Man KimDong-Hoon JangJung-Kee Lee
    • H01S5/00H01S5/042H01S5/12H01S5/20H01S5/22H01S3/18H01L21/31
    • H01S5/22H01S5/0425H01S5/12H01S5/2081
    • A method for manufacturing the semiconductor laser device comprising the steps of sequentially forming an active layer, a photo-waveguide layer, a cladding layer, and an ohmic contact layer on an upper surface of an InP substrate; forming a first patterned dielectric layer on the ohmic contact layer; depositing a patterned photoresist on the ohmic contact layer to define a p- electrode stripe layer; forming the p- electrode stripe layer only on a part of the ohmic contact layer; performing an annealing process; etching back the layers until the photo-waveguide layer is exposed, using the first patterned dielectric layer and the p- electrode stripe layer as an etching mask, to form a ridge; depositing a second dielectric layer on the substrate formed thus; selectively removing the second dielectric layer to form a contact hole on the p- electrode stripe layer; coating a bonding pad metal layer on the second dielectric layer and in the contact hole; and coating an n- electrode metal layer on bottom surface of the substrate. Since ohmic contact resistance is lowered, thermal generation and threshold current of oscillation are decreased. As a result, operating characteristics of the laser device can be largely improved.
    • 一种制造半导体激光器件的方法,包括以下步骤:在InP衬底的上表面上依次形成有源层,光波导层,包层和欧姆接触层; 在所述欧姆接触层上形成第一图案化电介质层; 在欧姆接触层上沉积图案化的光致抗蚀剂以限定p-电极条纹层; 仅在欧姆接触层的一部分上形成p-电极条纹层; 进行退火处理; 使用第一图案化电介质层和p-电极条纹层作为蚀刻掩模,蚀刻层,直到光波导层被曝光,以形成脊; 在由此形成的衬底上沉积第二介电层; 选择性地去除所述第二电介质层以在所述p电极条带层上形成接触孔; 在所述第二电介质层和所述接触孔中涂覆焊垫金属层; 并在衬底的底表面上涂覆n-电极金属层。 由于欧姆接触电阻降低,所以发热和振荡的阈值电流降低。 结果,可以大大提高激光器件的工作特性。
    • 2. 发明授权
    • Avalanche photodiode having a multiplication layer with superlattice
    • 雪崩光电二极管具有超晶格的乘法层
    • US5369292A
    • 1994-11-29
    • US149775
    • 1993-11-10
    • Ji-Beom YooChan-Yong ParkHong-Man Kim
    • Ji-Beom YooChan-Yong ParkHong-Man Kim
    • H01L31/0352H01L31/107H01L31/06
    • B82Y20/00H01L31/035236H01L31/1075
    • An avalanche photodiode in which a strained superlattice structure is used as a multiplication layer, comprising: an n.sup.+ type InP substrate; an n.sup.+ type InP epitaxial layer formed on a main surface of the substrate; an N type In.sub.1-x Al.sub.x As layer formed on the epitaxial layer; an n.sup.+ type In.sub.1-x Al.sub.x As layer formed on the N type In.sub.1-x Al.sub.x As layer, the n.sup.+ type In.sub.1-x Al.sub.x As layer having a relatively high impurity concentration more than the N type In.sub.1-x Al.sub.x As layer; the multiplication layer deposited on the n.sup.+ type In.sub.1-x Al.sub.x As layer, the multiplication layer having an In.sub.0.53 Ga.sub.0.47 As/In.sub.1-x Al.sub.x As superlattice structure; first and second p.sup.+ type In.sub.1-x Al.sub.x As layers laminated sequentially on the multiplication layer; an absorbing layer formed on the second p.sup.+ type In.sub.1-x Al.sub.x As layer, the absorbing layer being made of an In.sub.0.53 Ga.sub.0.47 As; a P type InP layer formed on the absorbing layer to reduce a surface leakage current; an In.sub.0.53 Ga.sub.0.47 As layer formed on the P type InP layer to be provided for an ohmic contact, and metal layers formed on an upper surface of the In.sub.0.53 Ga.sub.0.47 As layer and the other surface of the substrate, respectively.
    • 使用应变超晶格结构作为倍增层的雪崩光电二极管,包括:n +型InP衬底; 在衬底的主表面上形成的n +型InP外延层; 形成在外延层上的N型In 1-x Al x As层; 形成在N型In 1-x Al x As层上的n +型In 1-x Al x As层,n +型In 1-x Al x As层具有比N型In 1-x Al x As层更高的杂质浓度; 所述乘法层沉积在n +型In1-xAlxAs层上,所述乘法层具有In0.53Ga0.47As / In1-xAlxAs超晶格结构; 第一和第二p +型In1-xAlxAs层依次层叠在乘法层上; 形成在所述第二p +型In 1-x Al x As层上的吸收层,所述吸收层由In 0.53 Ga 0.47 As制成; 形成在吸收层上的P型InP层,以减少表面泄漏电流; 形成在用于欧姆接触的P型InP层上形成的In0.53Ga0.47As层,以及分别形成在In0.53Ga0.47As层的上表面和衬底的另一表面上的金属层。
    • 4. 发明申请
    • FOAM COAXIAL CABLE AND METHOD FOR MANUFACTURING THE SAME
    • 泡沫同轴电缆及其制造方法
    • US20100230130A1
    • 2010-09-16
    • US12377842
    • 2007-08-10
    • Chan-Yong ParkBong-Kwon ChoGi-Joon NamJung-Won ParkDae-Sung Lee
    • Chan-Yong ParkBong-Kwon ChoGi-Joon NamJung-Won ParkDae-Sung Lee
    • H01B7/18H01B7/02H01B3/44
    • H01B11/1839H01B13/016
    • A foam coaxial cable includes a central conductor; an inner skin layer surrounding the central conductor coaxially; an insulation layer surrounding the inner skin layer coaxially and made of polyethylene resin containing a plurality of foam cells uniformly formed therein; wherein the inner skin layer is made of polyolefin resin having excellent compatibility with the polyethylene resin to increase an interfacial adhesive force with the insulation layer, an outer skin layer surrounding the insulation layer coaxially to prevent overfoaming of the insulation layer and allow uniform creation of foam cells; a shield surrounding the outer skin layer coaxially; and a jacket surrounding the shield. This cable improves an interfacial adhesive force between the central conductor and the insulation layer and also improves the degree of foam of the foam cells, thereby capable of propagating ultra high frequency of GHz level without signal interference.
    • 泡沫同轴电缆包括中心导体; 同心地围绕中心导体的内表皮层; 绝缘层,其同轴地包围内层,由聚乙烯树脂制成,其中均匀地形成有多个泡沫泡沫体; 其中,所述内表皮层由与所述聚乙烯树脂具有优异相容性的聚烯烃树脂制成,以增加与所述绝缘层的界面粘合力,所述绝缘层同轴地包围所述绝缘层的外表皮层,以防止所述绝缘层发泡,并允许均匀地形成泡沫 细胞; 围绕外皮层的护罩同轴; 围绕盾牌的夹克。 该电缆改善了中心导体和绝缘层之间的界面粘合力,并且还改善了泡沫单元的泡沫程度,从而能够传播超高频率的GHz电平而没有信号干扰。
    • 6. 发明申请
    • APPARATUS AND METHOD FOR COMPARING PROTEIN STRUCTURE USING 3D RDA AND FOURIER DESCRIPTOR
    • 使用3D RDA和FOURIER描述符比较蛋白质结构的装置和方法
    • US20080140659A1
    • 2008-06-12
    • US11928672
    • 2007-10-30
    • Chan-Yong ParkSung-Hee ParkDae-Hee KimSoo-Jun ParkSeon-Hee Park
    • Chan-Yong ParkSung-Hee ParkDae-Hee KimSoo-Jun ParkSeon-Hee Park
    • G06F7/04G06F17/14
    • G06F19/16G06F19/10
    • Provided is an apparatus and method for comparing a protein structure, which can search a protein similar to an inquiry protein in a 3D protein database in real time by describing a feature of a protein structure by using a three-dimensional (3D) relative directional angle (RDA) and a Fourier descriptor. The apparatus includes: a 3D RDA coder configured to code a 3D RDA of a target protein data or an inquiry protein data inputted from the outside; a Fourier transformer configured to obtain Fourier coefficients by Fourier transforming 3D RDA coding values coded by the 3D RDA coder; a comparator configured to compare the obtained Fourier coefficient of the target protein data with the obtained Fourier coefficient of the inquiry protein data; and a data generator configured to output protein data in order from high similarity to low similarity according to the comparison result of the comparator.
    • 提供了一种用于比较蛋白质结构的装置和方法,其可以通过使用三维(3D)相对方向角度描述蛋白质结构的特征来实时搜索与3D蛋白质数据库中的查询蛋白质相似的蛋白质 (RDA)和傅立叶描述符。 该装置包括:3D RDA编码器,被配置为对目标蛋白质数据的3D RDA或从外部输入的查询蛋白质数据进行编码; 傅立叶变换器,被配置为通过傅里叶变换来获得傅里叶系数,所述三维RDA编码值由3D RDA编码器编码; 比较器,将获得的目标蛋白质数据的傅立叶系数与所求得的蛋白质数据的傅里叶系数进行比较; 以及数据生成器,其被配置为根据比较器的比较结果从高相似性到低相似性的顺序输出蛋白质数据。
    • 8. 发明申请
    • SUBSTRATE PROCESSING APPARATUS AND METHOD
    • 基板加工装置和方法
    • US20110028001A1
    • 2011-02-03
    • US12934419
    • 2009-03-27
    • Sung-Tae JeIl-Kwang YangChan-Yong Park
    • Sung-Tae JeIl-Kwang YangChan-Yong Park
    • H01L21/46
    • C23C16/45565H01J37/3244H01J37/32449
    • Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.
    • 公开了一种基板处理装置和方法。 基板处理装置包括提供内部空间的处理室(10),其中进行到基板上的处理; 安装在所述处理室(10)中以支撑所述基板的支撑构件(30) 以及位于所述支撑构件(30)上方以朝向所述支撑构件(30)供应源气体的淋浴喷头(20),其中所述喷淋头(20)包括位于与所述支撑构件(30)分离的位置的第一喷射表面(24) 衬底的上表面第一距离,并且设置有用于喷射源气体的第一喷射孔(24a)的出口; 以及第二注入表面(26),其位于与所述基板的上表面隔开第二距离与所述第一距离不同的位置处,并且设置有用于喷射所述源气体的第二喷射孔(26a)的出口。
    • 9. 发明申请
    • AIR BLOWN OPTICAL FIBER UNIT HAVING BEAD ATTACHED ON THE SURFACE
    • 具有连接在表面上的珠子的空气光纤光学单元
    • US20090202208A1
    • 2009-08-13
    • US11720992
    • 2004-12-08
    • Chan-Yong Park
    • Chan-Yong Park
    • G02B6/44
    • G02B6/4438
    • Disclosed is an air blown optical fiber unit having low friction with an installation tube during air blown installation. The air blown optical fiber unit includes at least one optical fiber, a buffer layer surrounding the optical fiber and made of polymer resin, an outer layer surrounding the buffer layer and made of polymer resin, and beads attached on a surface of the outer layer, and the beads have an average diameter of 80 μm to 140 μm and an average roughness of 10 μm or less and a radio (R/r) of a long radius (R) to a short radius (r) is in the range of 1 to 1.5. The optical fiber unit gives less friction with the inner surface of an installation tube during the installation work, so it may be easily installed not only in a linear region but also in a curved region.
    • 公开了一种在吹风安装期间与安装管具有低摩擦力的吹气光纤单元。 吹气光纤单元包括至少一个光纤,围绕光纤并由聚合物树脂制成的缓冲层,围绕缓冲层并由聚合物树脂制成的外层,以及附着在外层表面上的珠子, 珠的平均直径为80μm〜140μm,平均粗糙度为10μm以下,长半径(R)〜短半径(r)的无线电(R / r)为1 到1.5。 光纤单元在安装工作期间与安装管的内表面的摩擦力较小,因此可以容易地安装在线性区域中,也可以容易地安装在弯曲区域中。