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1. 发明授权

US08993975B2 Gamma ray detecting apparatus and method for detecting gamma ray using the same 有权
标题翻译： γ射线检测装置及使用其的γ射线检测方法
公开(公告)号：US08993975B2
公开(公告)日：2015-03-31
申请号：US14111103
申请日：2012-02-02
申请人： Chan-Hyeong Kim , Jin-Hyung Park , Hee Seo
发明人： Chan-Hyeong Kim , Jin-Hyung Park , Hee Seo
IPC分类号： G01T1/20 , G01T1/28 , G01T1/29 , A61B6/03 , A61B6/00
CPC分类号： G01T1/2006 , A61B6/037 , A61B6/508 , G01T1/28 , G01T1/29
摘要： There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.
摘要翻译：提供了一种伽马射线检测装置，包括：二次电子发射器，其使入射伽马射线的康普顿散射反应在伽马射线的进行方向上发射二次电子; 第一辐射检测器，被设置为相对于二次电子的发射进行方向与二次电子发射体相对，并且检测二次电子的位置和转移能量; 第二辐射检测器，被设置为相对于所述第二辐射检测器与所述第二辐射检测器的发射进行方向相对，并且检测通过所述第一辐射检测器的二次电子的位置和转移能; 第三辐射检测器，被设置为相对于所述二次电子的发射进行方向与所述第二辐射检测器相对，并且通过吸收通过所述第二辐射检测器的二次电子来检测所述二次电子的剩余能量; 以及数据处理器，其具有判断二次电子是否在第一至第三辐射检测器中同时反应的符合电路，并且数据处理器返回跟踪由第一和第二辐射检测器检测到的二次电子的轨迹，以检测射线源的位置的γ射线和伽马射线检测方法。

2. 发明申请

US20140021362A1 GAMMA RAY DETECTING APPARATUS AND METHOD FOR DETECTING GAMMA RAY USING THE SAME 有权
标题翻译：伽马射线检测装置和使用其检测伽玛射线的方法
公开(公告)号：US20140021362A1
公开(公告)日：2014-01-23
申请号：US14111103
申请日：2012-02-02
申请人： Chan-Hyeong Kim , Jin-Hyung Park , Hee Seo
发明人： Chan-Hyeong Kim , Jin-Hyung Park , Hee Seo
IPC分类号： G01T1/20
CPC分类号： G01T1/2006 , A61B6/037 , A61B6/508 , G01T1/28 , G01T1/29
摘要： There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation detector; and a data processor having a coincidence circuit judging whether the secondary electrons simultaneously react in the first to third radiation detectors, and the data processor back traces trajectories of the secondary electrons detected by the first and second radiation detectors to detect the position of a ray source of the gamma ray, and a gamma ray detecting method.
摘要翻译：提供了一种伽马射线检测装置，包括：二次电子发射器，其使入射伽马射线的康普顿散射反应在伽马射线的进行方向上发射二次电子; 第一辐射检测器，被设置为相对于二次电子的发射进行方向与二次电子发射体相对，并且检测二次电子的位置和转移能量; 第二辐射检测器，被设置为相对于所述第二辐射检测器与所述第二辐射检测器的发射进行方向相对，并且检测通过所述第一辐射检测器的二次电子的位置和转移能; 第三辐射检测器，被设置为相对于所述二次电子的发射进行方向与所述第二辐射检测器相对，并且通过吸收通过所述第二辐射检测器的二次电子来检测所述二次电子的剩余能量; 以及数据处理器，其具有判断二次电子是否在第一至第三辐射检测器中同时反应的符合电路，并且数据处理器返回跟踪由第一和第二辐射检测器检测到的二次电子的轨迹，以检测射线源的位置的γ射线和伽马射线检测方法。

3. 发明授权

US07387965B2 Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same 失效
标题翻译：用于创建缺陷识别级别的参考图案，其制造方法以及使用其的检查缺陷的方法
公开(公告)号：US07387965B2
公开(公告)日：2008-06-17
申请号：US10848250
申请日：2004-05-18
申请人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
发明人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
IPC分类号： H01L21/311
CPC分类号： G03F1/84 , G01N21/93 , G01N21/9501
摘要： A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要翻译：用于产生缺陷识别级别的参考图形包括形成在透明基板上的空白区域和与空白区域相邻形成的光栅区域，其中光栅区域包括多个平行的沟槽线。

4. 发明申请

US20130214199A1 CMP SLURRY COMPOSITION FOR TUNGSTEN 有权
标题翻译： CMP浆料组合物
公开(公告)号：US20130214199A1
公开(公告)日：2013-08-22
申请号：US13643375
申请日：2012-07-06
申请人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
发明人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
IPC分类号： C23F1/30
CPC分类号： C23F1/30 , C09G1/02 , C23F3/06
摘要： The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要翻译：本发明涉及一种用于抛光钨的CMP浆料组合物，其包括研磨剂和抛光化学品，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光化学品包括过氧化氢，过硫酸铵和硝酸铁。浆料组合物不变色并且具有良好的蚀刻选择性，从而适用于CMP工艺。

5. 发明授权

US07084950B2 Chromeless photomask and exposure apparatus including the chromeless photomask 失效
标题翻译：无色光掩模和包括无色光掩模的曝光设备
公开(公告)号：US07084950B2
公开(公告)日：2006-08-01
申请号：US10407462
申请日：2003-04-07
申请人： Dong-Hoon Chung , Jin-Hyung Park
发明人： Dong-Hoon Chung , Jin-Hyung Park
IPC分类号： G03B27/32 , G03B27/42 , G03F1/00
CPC分类号： G03F1/34
摘要： A chromeless photomask includes a main pattern portion and a complementary pattern portion formed in the surface of the transparent mask substrate adjacent to an outer peripheral edge of the main pattern portion. The main and complementary pattern portions are each formed by recessing a surface of a transparent mask substrate to produce respective protrusions and recesses that induce a phase difference of 180 degrees in light rays passing therethrough. The complementary pattern portion is designed to produce interference that prevents distortion in the photoresist pattern formed at a region by and corresponding to the edge of the main pattern portion of the photomask. Accordingly, the present invention provides for a relatively large secondary mask alignment margin.
摘要翻译：无铬光掩模包括形成在与图案部分的外周边缘相邻的透明掩模基板的表面中的主图案部分和互补图案部分。主要和互补图案部分各自通过使透明掩模基板的表面凹陷而形成相应的突出和凹陷，其在通过其的光线中引起180度的相位差。互补图案部分被设计成产生干涉，防止在光掩模的主图案部分的边缘处形成的区域处形成的光致抗蚀剂图案的失真。因此，本发明提供了相对较大的二次掩模对准边缘。

6. 发明申请

US20050009355A1 Reference pattern for creating a defect recognition level, method of fabricating the same and method of inspecting defects using the same 失效
标题翻译：用于创建缺陷识别级别的参考图案，其制造方法以及使用其的检查缺陷的方法
公开(公告)号：US20050009355A1
公开(公告)日：2005-01-13
申请号：US10848250
申请日：2004-05-18
申请人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
发明人： Won-Il Cho , In-Kyun Shin , Jin-Hyung Park
IPC分类号： H01L21/027 , G01N21/95 , G03F1/00 , G03F9/00 , H01L21/311
CPC分类号： G03F1/84 , G01N21/93 , G01N21/9501
摘要： A reference pattern for creating a defect recognition level comprises a blank region formed on a transparent substrate and a grating region formed adjacent to the blank region, wherein the grating region includes a plurality of parallel trench lines.
摘要翻译：用于产生缺陷识别级别的参考图形包括形成在透明基板上的空白区域和与空白区域相邻形成的光栅区域，其中光栅区域包括多个平行的沟槽线。

7. 发明授权

US09163314B2 CMP slurry composition for tungsten 有权
标题翻译：钨的CMP浆料组成
公开(公告)号：US09163314B2
公开(公告)日：2015-10-20
申请号：US13643375
申请日：2012-07-06
申请人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
发明人： Jea-Gun Park , Jin-Hyung Park , Jae-Hyung Lim , Jong-Young Cho , Ho Choi , Hee-Sub Hwang
IPC分类号： C09K3/14 , C09G1/02 , C23F1/30 , C23F3/06
CPC分类号： C23F1/30 , C09G1/02 , C23F3/06
摘要： The present invention relates to a CMP slurry composition for polishing tungsten comprising a abrasive and a polishing chemical, wherein the abrasive comprises colloidal silica dispersed in ultra-pure water, and the polishing chemical comprises hydrogen peroxide, ammonium persulfate and iron nitrate. The slurry composition is not discolored and has good etching selectivity, so as to be applied to a CMP process.
摘要翻译：本发明涉及一种用于抛光钨的CMP浆料组合物，其包括研磨剂和抛光化学品，其中磨料包含分散在超纯水中的胶体二氧化硅，抛光化学品包括过氧化氢，过硫酸铵和硝酸铁。浆料组合物不变色并且具有良好的蚀刻选择性，从而适用于CMP工艺。

8. 发明申请

US20100020305A1 THREE-DIMENSIONAL MEASUREMENT SYSTEM AND RESCALING METHOD USING INDOOR GPS 有权
标题翻译：三维测量系统和使用室内GPS的重建方法
公开(公告)号：US20100020305A1
公开(公告)日：2010-01-28
申请号：US12442669
申请日：2007-09-21
申请人： Se-Hwan Song , Seong-Youb Chung , Sung-Han Kim , Jin-Hyung Park , Young-Jun Park , Jae-Hoon Kim
发明人： Se-Hwan Song , Seong-Youb Chung , Sung-Han Kim , Jin-Hyung Park , Young-Jun Park , Jae-Hoon Kim
IPC分类号： G01C3/00
CPC分类号： G01C3/00 , G01B11/14 , G01S1/70
摘要： A three-dimensional measurement system using an IGPS includes a rescale bar having linear scales thereon, a linear encoder for measuring an absolute length within which the linear encoder moves on the rescale bar, a plurality of optical transmitters that radiates pan beams, and a vector bar having one end attached to the linear encoder, and having a receiver to detect the pan beams radiated from the optical transmitters, the vector bar acquiring coordinates of two points where the vector bar moves by using the receiver, and measuring a relative length from the coordinates. A ratio between the absolute length and the relative length is applied in rescaling an actual distance between two positions to be measured.
摘要翻译：使用IGPS的三维测量系统包括其上具有线性刻度的重定标杆，用于测量线性编码器在重定标杆上移动的绝对长度的线性编码器，辐射泛光束的多个光发射器，以及矢量杆，其一端连接到线性编码器，并具有用于检测从光学发射器辐射的摇摄光束的接收器，矢量条获取通过使用接收器移动矢量条的两个点的坐标，以及测量从坐标绝对长度和相对长度之间的比率应用于两个测量位置之间的实际距离的重新缩放。

9. 发明申请

US20120190201A1 MULTI-SELECTIVE POLISHING SLURRY COMPOSITION AND A SEMICONDUCTOR ELEMENT PRODUCTION METHOD USING THE SAME 审中-公开
标题翻译：多选择性抛光浆料组合物和使用其的半导体元件生产方法
公开(公告)号：US20120190201A1
公开(公告)日：2012-07-26
申请号：US13386494
申请日：2010-07-09
申请人： Jea-Gun Park , Un-Gyu Paik , Jin-Hyung Park , Hao Cui , Jong-Young Cho , Hee-Sub Hwang , Jae-Hyung Lim , Ye-Hwan Kim
发明人： Jea-Gun Park , Un-Gyu Paik , Jin-Hyung Park , Hao Cui , Jong-Young Cho , Hee-Sub Hwang , Jae-Hyung Lim , Ye-Hwan Kim
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： H01L21/31056 , C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212
摘要： Provided are a multi-selective polishing slurry composition and a semiconductor element production method using the same. A silicon film provided with element patterns is formed on the uppermost part of a substrate having a first region and a second region. The element pattern density on the first region is higher than the element pattern density on the second region. Formed in sequence on top of the element patterns are a first silicon oxide film, a silicon nitride film and a second silicon oxide film. The substrate is subjected to chemical-mechanical polishing until the silicon film is exposed, by using a polishing slurry composition containing a polishing agent, a silicon nitride film passivation agent and a silicon film passivation agent. The polishing slurry composition may be a mixture of 100 parts by weight of a polishing agent suspension, containing a polishing agent, and from 40 to 120 parts by weight of an additive solution, and the additive solution can contain 100 parts by weight of a solvent, from 0.01 to 5 parts by weight of a silicon nitride film passivation agent and from 0.01 to 5 parts by weight of a silicon film passivation agent.
摘要翻译：提供多选择性研磨浆料组合物和使用其的半导体元件制造方法。具有元件图案的硅膜形成在具有第一区域和第二区域的基板的最上部。第一区域上的元件图案密度高于第二区域上的元件图案密度。在元件图案顶部依次形成第一氧化硅膜，氮化硅膜和第二氧化硅膜。通过使用包含抛光剂，氮化硅膜钝化剂和硅膜钝化剂的抛光浆料组合物，对基材进行化学机械抛光，直到暴露硅膜。抛光浆料组合物可以是100重量份的含有抛光剂的抛光剂悬浮液和40至120重量份的添加剂溶液的混合物，并且添加剂溶液可以包含100重量份的溶剂，0.01〜5重量份的氮化硅膜钝化剂和0.01〜5重量份的硅膜钝化剂。

10. 发明申请

US20120106784A1 APPARATUS AND METHOD FOR TRACKING OBJECT IN IMAGE PROCESSING SYSTEM 审中-公开
标题翻译：用于跟踪图像处理系统中的对象的装置和方法
公开(公告)号：US20120106784A1
公开(公告)日：2012-05-03
申请号：US13204289
申请日：2011-08-05
申请人： Ik-Hwan Cho , Dae-Kyu Shin , Chang-Sung Jung , Min-Seok Ku , Jin-Hyung Park , Dong-Hwan Seo
发明人： Ik-Hwan Cho , Dae-Kyu Shin , Chang-Sung Jung , Min-Seok Ku , Jin-Hyung Park , Dong-Hwan Seo
IPC分类号： G06K9/00
CPC分类号： G06T7/246 , G06T7/73
摘要： A method, apparatus, and system track an object in an image or a video. Pose information is extracted using a relation of at least one feature point extracted in a first Region of Interest (RoI). A pose is estimated using the pose information. A secpmd RoI is set using the pose. And the second RoI is estimated using a filtering scheme.
摘要翻译：方法，装置和系统跟踪图像或视频中的对象。使用在第一感兴趣区域（RoI）中提取的至少一个特征点的关系来提取姿势信息。使用姿势信息估计姿势。使用姿势设置secpmd RoI。并且使用过滤方案估计第二个RoI。

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