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1. 发明授权

US5138973A Wafer processing apparatus having independently controllable energy sources 失效
标题翻译：具有独立可控能量源的晶片处理装置
公开(公告)号：US5138973A
公开(公告)日：1992-08-18
申请号：US282917
申请日：1988-12-05
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/54
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

2. 发明授权

US5248636A Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
标题翻译：使用远程产生的等离子体和原位等离子体与UV照射的处理方法
公开(公告)号：US5248636A
公开(公告)日：1993-09-28
申请号：US892460
申请日：1992-06-02
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/54 , C23C16/482 , C23C16/517
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成足够厚以充当真空密封。

3. 发明授权

US4838984A Method for etching films of mercury-cadmium-telluride and zinc sulfid 失效
标题翻译：镉 - 碲化镉和硫化锌蚀刻薄膜的方法
公开(公告)号：US4838984A
公开(公告)日：1989-06-13
申请号：US74451
申请日：1987-07-16
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
IPC分类号： H01L21/465
CPC分类号： H01L21/465
摘要： A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.
摘要翻译：使用包括含氢气和/或含烷烃的气体提供各向异性蚀刻的气体混合物，利用远程等离子体和原位等离子体对各种各向异性蚀刻汞 - 碲化镉（HgCdTe）或硫化锌（ZnS）的膜。

4. 发明授权

US4949671A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4949671A
公开(公告)日：1990-08-21
申请号：US292624
申请日：1985-12-21
申请人： Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
发明人： Cecil J. Davis , Robert T. Matthews , Rudy L. York , Joseph D. Luttmer , Dwain R. Jakubik , James B. Hunter
IPC分类号： H01J37/32
CPC分类号： H01J37/3244
摘要： A processing apparatus and method wherein two separate gas feeds are provided in proximity to the face of a face down wafer. A shroud can be used to maximize mixing of the two gas feed streams without excessive residence time.
摘要翻译：一种处理装置和方法，其中在面向下的晶片的表面附近提供两个单独的气体进料。可以使用护罩来最大化两种气体进料流的混合而没有过多的停留时间。

5. 发明授权

US4877757A Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma 失效
标题翻译：使用远程氧等离子体顺序清洗和钝化GaAs衬底的方法
公开(公告)号：US4877757A
公开(公告)日：1989-10-31
申请号：US282927
申请日：1988-12-07
申请人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： H01L21/00 , H01L21/465 , H01L21/471
CPC分类号： H01L21/67028 , H01L21/465 , H01L21/471 , Y10S148/017 , Y10S148/021 , Y10S148/056
摘要： A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
摘要翻译：一种用于在汞镉碲化物晶片上沉积钝化层的处理装置和方法，其利用单个处理室向室提供氧气，其中激发能由远程产生的等离子体提供，以便除去任何有机残余物，然后提供硫化物或硒化物气体与原位产生的紫外线能量照射晶片以产生钝化层。

6. 发明授权

US4837113A Method for depositing compound from group II-VI 失效
标题翻译：从II-VI组沉积化合物的方法
公开(公告)号：US4837113A
公开(公告)日：1989-06-06
申请号：US203562
申请日：1988-05-25
申请人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
发明人： Joseph D. Luttmer , Rudy L. York , Patricia B. Smith , Cecil J. Davis
IPC分类号： C23C16/30 , H01L21/00
CPC分类号： H01L21/67017 , C23C16/306 , Y10S438/935
摘要： A II-VI compound, such as zinc sulfide, is deposited from a gaseous mixture in a reactor which is compatible with a vacuum processing system which includes vacuum wafer transport. Two manifolds are used, each connected to a supply of one or more reagent gases, to improve uniformity.
摘要翻译：将II-VI化合物如硫化锌从气态混合物沉积在与包括真空晶片输送的真空处理系统相容的反应器中。使用两个歧管，每个歧管连接到一个或多个试剂气体的供应以改善均匀性。

7. 发明授权

US5077092A Method and apparatus for deposition of zinc sulfide films 失效
标题翻译：锌沉积薄膜沉积的方法和装置
公开(公告)号：US5077092A
公开(公告)日：1991-12-31
申请号：US374883
申请日：1989-06-30
申请人： Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
发明人： Patricia B. Smith , Larry D. Hutchins , Rudy L. York , Joseph D. Luttmer , Cecil J. Davis
IPC分类号： C23C16/30 , C23C16/44 , H01L21/205 , H01L31/0216 , H01L31/10 , H01L31/18 , H01L33/00
CPC分类号： C23C16/306 , H01L31/02161 , H01L31/1828 , Y02E10/543
摘要： The deposition of zinc sulfide films (16) using dimethylzinc (46) and hydrogen sulfide (44) in a vacuum processor reactor (50) provides a low temperature process applicable for high volume production of infrared focal planes. These layers (16) of zinc sulfide are used as insulators and infrared anti-reflective coatings which are free of contamination relative to physical vapor deposited ZnS films. The zinc sulfide layers (16) are formed by evacuating a chamber (62) and mixing hydrogen sulfide gas (44) and dimethylzinc gas (46) at specific operating conditions until the desired ZnS film thickness is obtained. The rate of growth of the zinc sulfide (16) film is controlled by varying the temperature, pressure, and the relative flow rates of the hydrogen sulfide gas (44) and the dimethylzinc gas (46).

8. 发明授权

US4855160A Method for passivating wafer 失效
标题翻译：钝化晶圆的方法
公开(公告)号：US4855160A
公开(公告)日：1989-08-08
申请号：US203563
申请日：1988-05-26
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York
IPC分类号： H01L21/471 , H01L21/473 , H01L21/677
CPC分类号： H01L21/6779 , H01L21/471 , H01L21/473
摘要： A high pressure processing apparatus and method which is compatible with a system wherein wafers are largely transported and processed under vacuum. The pressure vessel can be extremely small, i.e. has a total pressurized volume of which almost all interior points are within one or two centimeters of one of the workpiece or wafers which may be loaded into the chamber. HgCdTe is passivated by utilizing oxygen and water vapor for oxidation or a source of sulfur for sulfidization. The wafers and the gases are heated by a heater located on the vertical walls of the process chamber.
摘要翻译：一种与其中晶片在真空下大量输送和处理的系统兼容的高压处理设备和方法。压力容器可以非常小，即具有总加压体积，其几乎所有内部点可以装载到腔室中的工件或晶片中的一个或两厘米。 HgCdTe通过利用氧气和水蒸气进行氧化而被钝化，或硫化来源被硫化。晶片和气体由位于处理室垂直壁上的加热器加热。

9. 发明授权

US5132761A Method and apparatus for forming an infrared detector having a refractory metal 失效
$Method and apparatus for forming an infrared detector having a refractory metal$
标题翻译：用于形成具有耐火金属的红外探测器的方法和装置
公开(公告)号：US5132761A
公开(公告)日：1992-07-21
申请号：US593363
申请日：1990-10-01
申请人： Rudy L. York , Joseph D. Luttmer , Chang F. Wan , Thomas W. Orent , Larry D. Hutchins , Art Simmons
发明人： Rudy L. York , Joseph D. Luttmer , Chang F. Wan , Thomas W. Orent , Larry D. Hutchins , Art Simmons
IPC分类号： H01L31/10 , H01L27/14 , H01L31/113
CPC分类号： H01L31/113
摘要： Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the present invention uses a refractory metal such as tantalum as the gate (16) which is less susceptible to the etching by the bromine solution used to etch the vias (22) as compared to aluminum. Additionally, the etching of the refractory metal film to form the MIS structure can be done with a fluorine-containing plasma, thus avoiding the corrosion of the metal associated with etching aluminum metal films in a chlorine-containing plasma.

10. 发明授权

US5017511A Method for dry etching vias in integrated circuit layers 失效
标题翻译：集成电路层干法蚀刻通孔的方法
公开(公告)号：US5017511A
公开(公告)日：1991-05-21
申请号：US377514
申请日：1989-07-10
申请人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
发明人： Jerome L. Elkind , Patricia B. Smith , Larry D. Hutchins , Joseph D. Luttmer , Rudy L. York , Julie S. England
IPC分类号： H01L21/465 , H01L21/467 , H01L21/4757
CPC分类号： H01L21/465 , H01L21/467 , H01L21/47573 , Y10S148/051
摘要： A process is disclosed through which vias (50) can be formed by the reaction of an etchant species (52) with a mercury cadmium telluride (HgCdTe) or zinc sulfide (ZnS) layer (42). The activating gases (20) are preferably a hydrogen gas or a methane gas which is excited in a diode plasma reactor (100) which has an RF power source (13) applied to one of two parallel electrodes. The etching occurs in selected areas in a photoresist pattern (44) residing over the ZnS or HgCdTe layer (42). Wet etching the layer (42) with a wet etchant (54) following the dry etching, improves the via (50) by making the walls (48) smoother, and allowing for expansion of the vias (50) to a dimension necessary for proper operation of a HgCdTe-based infrared detector.

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