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1. 发明授权

US4838984A Method for etching films of mercury-cadmium-telluride and zinc sulfid 失效
标题翻译：镉 - 碲化镉和硫化锌蚀刻薄膜的方法
公开(公告)号：US4838984A
公开(公告)日：1989-06-13
申请号：US74451
申请日：1987-07-16
申请人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
发明人： Joseph D. Luttmer , Cecil J. Davis , Patricia B. Smith , Rudy L. York , Lee M. Loewenstein , Rhett B. Jucha
IPC分类号： H01L21/465
CPC分类号： H01L21/465
摘要： A film of mercury-cadmium-telluride (HgCdTe) or zinc sulfide (ZnS) is anisotropically etched utilizing a remote plasma and an in situ plasma utilizing a gas mixture which includes a hydrogen containing and/or an alkyl bearing gas providing an anisotropic etch.
摘要翻译：使用包括含氢气和/或含烷烃的气体提供各向异性蚀刻的气体混合物，利用远程等离子体和原位等离子体对各种各向异性蚀刻汞 - 碲化镉（HgCdTe）或硫化锌（ZnS）的膜。

2. 发明授权

US5138973A Wafer processing apparatus having independently controllable energy sources 失效
标题翻译：具有独立可控能量源的晶片处理装置
公开(公告)号：US5138973A
公开(公告)日：1992-08-18
申请号：US282917
申请日：1988-12-05
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/54
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。

3. 发明授权

US5248636A Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation 失效
标题翻译：使用远程产生的等离子体和原位等离子体与UV照射的处理方法
公开(公告)号：US5248636A
公开(公告)日：1993-09-28
申请号：US892460
申请日：1992-06-02
申请人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
发明人： Cecil J. Davis , Rhett B. Jucha , Joseph D. Luttmer , Rudy L. York , Lee M. Loewenstein , Robert T. Matthews , Randall C. Hildenbrand
IPC分类号： C23C16/48 , C23C16/517 , C23C16/54
CPC分类号： C23C16/54 , C23C16/482 , C23C16/517
摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.
摘要翻译：一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击其具有基本上邻接晶片表面的暗空间。原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成足够厚以充当真空密封。

4. 发明授权

US4842686A Wafer processing apparatus and method 失效
标题翻译：晶圆加工设备及方法
公开(公告)号：US4842686A
公开(公告)日：1989-06-27
申请号：US75016
申请日：1987-07-17
申请人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Robert T. Matthews , John I. Jones , Rhett B. Jucha
IPC分类号： H01L21/302 , C23C16/48 , C23C16/517 , C23C16/54 , G03F7/20 , H01L21/027 , H01L21/3065 , H01L21/31 , H01L21/677
CPC分类号： G03F7/70808 , C23C16/482 , C23C16/517 , C23C16/54 , G03F7/70866
摘要： A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.

5. 发明授权

US5262610A Low particulate reliability enhanced remote microwave plasma discharge device 失效
标题翻译：低微粒可靠性增强了远程微波等离子体放电装置
公开(公告)号：US5262610A
公开(公告)日：1993-11-16
申请号：US677048
申请日：1991-03-29
申请人： Steve S. Huang , Cecil J. Davis , Rhett B. Jucha , Lee M. Loewenstein
发明人： Steve S. Huang , Cecil J. Davis , Rhett B. Jucha , Lee M. Loewenstein
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32256 , H01J37/32357
摘要： A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.
摘要翻译：远程微波等离子体发生器包括两部分的组合，可调谐微波施加器和双壁水冷石英/蓝宝石管。可调谐波导管施加器是一个不导电的可调节波导管，其中插入有石英/蓝宝石管。可调节端距离管的中心线的四分之一的引导波长，另一侧距离较小0.1英寸，因此允许施加器与三根短线调谐器一起使用以实现最佳耦合。

6. 发明授权

US4867841A Method for etch of polysilicon film 失效
标题翻译：多晶硅膜蚀刻方法
公开(公告)号：US4867841A
公开(公告)日：1989-09-19
申请号：US203585
申请日：1988-05-27
申请人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
发明人： Lee M. Loewenstein , Cecil J. Davis , Rhett B. Jucha
IPC分类号： H01L21/3213
CPC分类号： H01L21/32137
摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度温度。

7. 发明授权

US4842676A Process for etch of tungsten 失效
标题翻译：钨蚀刻工艺
公开(公告)号：US4842676A
公开(公告)日：1989-06-27
申请号：US122605
申请日：1987-11-17
申请人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
发明人： Rhett B. Jucha , Cecil J. Davis , Lee M. Loewenstein
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32136 , C23F4/00
摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.
摘要翻译：用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻和光致抗蚀剂和各向异性。

8. 发明授权

US4886570A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4886570A
公开(公告)日：1989-12-12
申请号：US282993
申请日：1988-12-02
申请人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
发明人： Cecil J. Davis , Robert T. Matthews , Lee M. Loewenstein , Rhett B. Jucha , Randall C. Hildenbrand , John I. Jones
IPC分类号： C23C16/48 , C23C16/517 , C23C16/52 , C23C16/54
CPC分类号： C23C16/482 , C23C16/517 , C23C16/52 , C23C16/54
摘要： A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.
摘要翻译：具有远程等离子体和原位等离子体发生器，紫外线源和辐射加热器的处理模块，其表示四个单独的能量源。四种来源可以单独使用，也可以任意组合使用，可单独使用。

9. 发明授权

US4878994A Method for etching titanium nitride local interconnects 失效
标题翻译：蚀刻氮化钛局部互连的方法
公开(公告)号：US4878994A
公开(公告)日：1989-11-07
申请号：US174649
申请日：1988-03-29
申请人： Rhett B. Jucha , Cecil J. Davis , Tom Tang , Lee M. Loewenstein
发明人： Rhett B. Jucha , Cecil J. Davis , Tom Tang , Lee M. Loewenstein
IPC分类号： C04B41/53 , C04B41/91 , C23F4/00 , H01L21/3213
CPC分类号： C04B41/5346 , C04B41/91 , C23F4/00 , H01L21/32136
摘要： A process for the etching of titanium containing film which utilizes both in situ and remote plasmas, and a gas mixture for the plasmas which comprises a halogen gas at low pressure and moderate temperature to produce an etch which is both selective to selected materials, for example, titanium silicide etc., and anisotropic.
摘要翻译：用于蚀刻含钛膜的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包括在低压和中等温度下的卤素气体，以产生对所选材料选择性的蚀刻，例如，硅化钛等，各向异性。

10. 发明授权

US4828649A Method for etching an aluminum film doped with silicon 失效
标题翻译：用于蚀刻掺杂有硅的铝膜的方法
公开(公告)号：US4828649A
公开(公告)日：1989-05-09
申请号：US198633
申请日：1988-05-18
申请人： Cecil J. Davis , Lee M. Loewenstein , Rhett B. Jucha
发明人： Cecil J. Davis , Lee M. Loewenstein , Rhett B. Jucha
IPC分类号： C23F4/00 , H01L21/3213
CPC分类号： H01L21/32136 , C23F4/00
摘要： A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl.sub.3, and Cl.sub.2, and with the process chamber within the process module being generally at ambient temperatures.
摘要翻译：利用在低压工艺模块中的远程和原位等离子体的组合以及等离子体的硅掺杂铝膜的蚀刻工艺由氦，BCl 3和Cl 2的混合物以及工艺模块内的处理室产生一般在环境温度。

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