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1. 发明授权

US4866005A Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 失效
标题翻译：碳化硅的升华产生大的，器件质量的碳化硅单晶
公开(公告)号：US4866005A
公开(公告)日：1989-09-12
申请号：US113565
申请日：1987-10-26
申请人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
发明人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205 , H01L33/00
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface of seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
摘要翻译：本发明是形成大型器件质量的碳化硅单晶的方法。通过在源材料中保持恒定的多型组成，通过在源材料中选择的尺寸分布，通过特定制备晶种的生长表面以及通过控制源材料和晶种之间的热梯度来增强升华过程。

2. 再颁专利

USRE34861E Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide 失效
标题翻译：碳化硅的升华产生大的，器件质量的碳化硅单晶
公开(公告)号：USRE34861E
公开(公告)日：1995-02-14
申请号：US594856
申请日：1990-10-09
申请人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
发明人： Robert F. Davis , Calvin H. Carter, Jr. , Charles E. Hunter
IPC分类号： C30B29/36 , C30B23/00 , H01L21/203 , H01L21/205 , H01L33/00 , H01L21/365
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： The present invention is a method of forming large device quality single crystals of silicon carbide. The sublimation process is enhanced by maintaining a constant polytype composition in the source materials, selected size distribution in the source materials, by specific preparation of the growth surface and seed crystals, and by controlling the thermal gradient between the source materials and the seed crystal.
摘要翻译：本发明是形成大型器件质量的碳化硅单晶的方法。通过在源材料中保持恒定的多型组成，通过选择的原料尺寸分布，通过生长表面和晶种的具体制备，以及通过控制源材料和晶种之间的热梯度来增强升华过程。

3. 发明授权

US4877757A Method of sequential cleaning and passivating a GaAs substrate using remote oxygen plasma 失效
标题翻译：使用远程氧等离子体顺序清洗和钝化GaAs衬底的方法
公开(公告)号：US4877757A
公开(公告)日：1989-10-31
申请号：US282927
申请日：1988-12-07
申请人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Rudy L. York , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： H01L21/00 , H01L21/465 , H01L21/471
CPC分类号： H01L21/67028 , H01L21/465 , H01L21/471 , Y10S148/017 , Y10S148/021 , Y10S148/056
摘要： A processing apparatus and method for depositing a passivating layer on a mercury-cadmium-telluride wafer utilizing a single process chamber to provide oxygen gas to the chamber with the excitation energy being provided by a remotely generated plasma in order to remove any organic residue and then supplying either a sulfide or selenide gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce a passivating layer.
摘要翻译：一种用于在汞镉碲化物晶片上沉积钝化层的处理装置和方法，其利用单个处理室向室提供氧气，其中激发能由远程产生的等离子体提供，以便除去任何有机残余物，然后提供硫化物或硒化物气体与原位产生的紫外线能量照射晶片以产生钝化层。

4. 发明授权

US5155066A Rapid-curing adhesive formulation for semiconductor devices 失效
标题翻译：用于半导体器件的快速固化胶粘剂配方
公开(公告)号：US5155066A
公开(公告)日：1992-10-13
申请号：US804116
申请日：1991-12-06
申请人： My N. Nguyen
发明人： My N. Nguyen
IPC分类号： H01L21/58 , H01L23/373 , H01L23/482
CPC分类号： H01L24/83 , H01L23/3737 , H01L23/4828 , H01L24/29 , H01L2224/2919 , H01L2224/8319 , H01L2224/83855 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/351 , Y10S148/021
摘要： A rapid curing adhesive formulation that contains 10-40 wt. % of a cyanate ester vehicle having a cyanate ester, alkylphenol and a metal curing catalyst and 60-90 wt. % of thermally and/or electrically conductive filler. The adhesive formulation has a maximum curing time of 5 minutes, preferably 2 minutes, at 200.degree. C. and is adapted for use in high speed processes for production of bonded semiconductor assemblies.
摘要翻译：一种快速固化的粘合剂制剂，其含有10-40wt。％的具有氰酸酯，烷基酚和金属固化催化剂的氰酸酯载体和60-90重量％％和/或导电填料的％。粘合剂配方在200℃下的最大固化时间为5分钟，优选为2分钟，并适用于生产粘结半导体组件的高速工艺。

5. 发明授权

US4786616A Method for heteroepitaxial growth using multiple MBE chambers 失效
标题翻译：使用多个MBE室的异质外延生长方法
公开(公告)号：US4786616A
公开(公告)日：1988-11-22
申请号：US61069
申请日：1987-06-12
申请人： Muhammad A. Awal , El Hang Lee
发明人： Muhammad A. Awal , El Hang Lee
IPC分类号： C30B23/02 , H01L21/306 , H01L21/205
CPC分类号： C30B23/02 , Y10S148/021 , Y10S148/169
摘要： A method for epitaxially growing a layer of III-V material on a wafer of a material such as silicon comprises the steps of placing the wafer (16') in a first ultra-high vacuum chamber (11), and epitaxially growing a transition layer such as germanium on the wafer. An intermediate high vacuum chamber (13) is used to transport the wafer 16' to a second ultra-high vacuum chamber (12), and the second chamber (12) is used to epitaxially grow a layer of III-V material over the transition layer. Gate valves (33 and 15) are sequentially opened and closed to that the second vacuum chamber (12) cannot be contaminated by gases or particles from the first vacuum chamber (11). Wafer transport from chamber (11) to (13) is achieved without exposure to the atmosphere or to significant pressure changes thus avoiding the waste of transfer time or the formation of native oxide on the wafer surface.
摘要翻译：在诸如硅的材料的晶片上外延生长III-V材料层的方法包括以下步骤：将晶片（16'）放置在第一超高真空室（11）中，并且外延生长过渡层例如晶圆上的锗。使用中间高真空室（13）将晶片16'输送到第二超高真空室（12），并且第二室（12）用于在过渡段外延生长III-V材料层层。闸阀（33和15）依次打开和关闭，使得第二真空室（12）不会被来自第一真空室（11）的气体或颗粒污染。从室（11）到（13）的晶片传输是在没有暴露于大气的情况下实现的，或者显着的压力变化，从而避免了在晶片表面上浪费转移时间或自然氧化物的形成。

6. 发明申请

WO1989004055A1 SUBLIMATION GROWTH OF SILICON CARBIDE SINGLE CRYSTALS 审中-公开
标题翻译：碳化硅单晶的底生长生长
公开(公告)号：WO1989004055A1
公开(公告)日：1989-05-05
申请号：PCT/US1988003794
申请日：1988-10-26
申请人： NORTH CAROLINA STATE UNIVERSITY
发明人： NORTH CAROLINA STATE UNIVERSITY , DAVIS, Robert, F. , CARTER, Calvin, H. Jr. , HUNTER, Charles, Eric
IPC分类号： H01L21/205
CPC分类号： H01L33/0054 , C30B23/00 , C30B29/36 , Y10S148/021 , Y10S148/148
摘要： A method of forming large device quality single crystals of silicon carbide (33). A monocrystalline seed crystal (32) of silicon carbide of the desired polytype and a silicon carbide source powder (40) are introduced into a sublimation system and the source powder is heated to a temperature sufficient to enable it to sublime. The growth surface of the seed crystal is also heated to a somewhat lower temperature than that of the source powder and there is generated and maintained a constant flow of vaporized Si, Si2C and SiC2 per unit area per unit time from the source powder to the growth surface of the seed crystal. The constant flow is maintained by a method which includes maintaining a constant thermal gradient as measured between the growth surface of the seed crystal and the source powder as the crystal grows and the source powder is used up, while maintaining the growth surface of the seed crystal and the source powder at their respective different temperatures, thereby maintaining a constant growth rate of the single seed crystal and a consistent growth of a single polytype on the single growth surface thereof.

7. 发明授权

US4988642A Semiconductor device, manufacturing method, and system 失效
标题翻译：半导体器件，制造方法和系统
公开(公告)号：US4988642A
公开(公告)日：1991-01-29
申请号：US445898
申请日：1989-12-01
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： C23C16/54 , H01L21/00 , H01L21/205 , H01L31/20
CPC分类号： H01L21/67173 , C23C16/54 , H01L21/02381 , H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02535 , H01L21/0262 , H01L21/67207 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521 , Y10S148/006 , Y10S148/021 , Y10S438/907
摘要： An improved semiconductor device manufacturing system and method is shown. In the system, undesirable sputtering effect can be averted by virtue of a combination of an ECR system and a CVD system. Prior to the deposition according to the above combination, a sub-layer can be pre-formed of a substrate in a reaction chamber and transported to another chamber in which deposition is made according to the combination without making contact with air, so that a junction thus formed has good characteristics.
摘要翻译：示出了改进的半导体器件制造系统和方法。在系统中，由于ECR系统和CVD系统的组合，可以避免不期望的溅射效应。在根据上述组合的沉积之前，子层可以在反应室中由基底预先形成，并且被输送到另一个室，其中根据组合进行沉积而不与空气接触，使得接合从而形成了良好的特性。

8. 发明授权

US4789645A Method for fabrication of monolithic integrated circuits 失效
标题翻译：单片集成电路制造方法
公开(公告)号：US4789645A
公开(公告)日：1988-12-06
申请号：US40418
申请日：1987-04-20
申请人： Joseph A. Calviello , Paul R. Bie , Ronald J. Pomian
发明人： Joseph A. Calviello , Paul R. Bie , Ronald J. Pomian
IPC分类号： H01L21/70 , H01L21/8252 , H01L29/48 , H01L21/283
CPC分类号： H01L21/707 , H01L21/8252 , Y10S148/014 , Y10S148/021 , Y10S438/913
摘要： During fabrication of monolithic microwave integrated circuits, active devices having sources, gates, drains, and/or Schottky barrier junctions are first provided for an epitaxial layers. Then many layers of metals and oxides are produced thereover in situ without removing the circuit from its environmental chamber. Circuit elements are then defined by processing of the many layers sequentially by photolithography and other processes from the top of the chip downward. Certain combinations of metals, oxides, and processes are selected to enable fabrication of circuits from the top down in this way. This reduces inclusion of contaminating chemical films and particles between the desired layers. Lumped and distributed capacitors, resistors, inductors, transmission lines, contacts, and complete active devices are monolithically defined, with a reduced number of process steps. An all-refractory MESFET is described, having a Schottky barrier gate and nonalloyed ohmic contacts for source and drain producible at room temperatures. Source, gate, and drain can be defined with a single mask. A thinner gold layer is formed for FET contacts than for other circuit conductors and elements by means of a configured tantalum layer buried in a thick gold layer.
摘要翻译：在制造单片微波集成电路期间，首先提供具有源极，栅极，漏极和/或肖特基势垒结的有源器件用于外延层。然后在原地生产许多层金属和氧化物，而不从其环境室中移除电路。然后通过光刻和从芯片的顶部向下的其它处理顺序地处理许多层来定义电路元件。选择金属，氧化物和工艺的某些组合以使得能够以这种方式从上到下制造电路。这减少了污染化学膜和颗粒在所需层之间的包含。集中和分布式电容器，电阻器，电感器，传输线，触点和完整的有源器件都是单片定义的，数量减少的工艺步骤。描述了全难熔MESFET，其具有肖特基势垒栅极和用于在室温下可产生的源极和漏极的非合金欧姆接触。源，栅极和漏极可以用单个掩模定义。通过埋在厚金层中的配置的钽层，为FET触点形成更薄的金层，而不是其他电路导体和元件。

9. 发明授权

US3331716A Method of manufacturing a semiconductor device by vapor-deposition 失效
标题翻译：通过气相沉积制造半导体器件的方法
公开(公告)号：US3331716A
公开(公告)日：1967-07-18
申请号：US44882565
申请日：1965-04-16
申请人： PHILIPS CORP
发明人： JAN BLOEM , WALTER STEINMAIER
IPC分类号： C23C16/24 , C23C16/40 , H01L21/205 , H01L21/316
CPC分类号： H01L21/02164 , C23C16/24 , C23C16/402 , H01L21/02271 , H01L21/02381 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L21/02639 , H01L21/31612 , Y10S148/006 , Y10S148/02 , Y10S148/021 , Y10S148/043 , Y10S148/072 , Y10S148/118 , Y10S148/122

10. 发明授权

US3152022A Epitaxial deposition on the surface of a freshly grown dendrite 失效
标题翻译：外延沉积在新生枝晶的表面上
公开(公告)号：US3152022A
公开(公告)日：1964-10-06
申请号：US19767862
申请日：1962-05-25
申请人： BELL TELEPHONE LABOR INC
发明人： HOWARD CHRISTENSEN , WAGNER RICHARD S
IPC分类号： C30B15/30 , H01L21/00
CPC分类号： C30B15/30 , H01L21/00 , Y10S117/903 , Y10S148/021 , Y10S148/025 , Y10S148/15 , Y10S438/913

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