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    • 3. 发明申请
    • PROJECTION EXPOSURE SYSTEM FOR MICROLITHOGRAPHY WITH A MEASUREMENT DEVICE
    • 用于具有测量装置的微观计算的投影曝光系统
    • WO2009089999A1
    • 2009-07-23
    • PCT/EP2009/000006
    • 2009-01-02
    • CARL ZEISS SMT AGMÜLLER, UlrichSTÜHLER, JoachimGROMER, OswaldFREIMANN, RolfKAUFMANN, PaulGEUPPERT, Bernhard
    • MÜLLER, UlrichSTÜHLER, JoachimGROMER, OswaldFREIMANN, RolfKAUFMANN, PaulGEUPPERT, Bernhard
    • G03F7/20
    • G03F7/70775G03F7/70258G03F7/706G03F7/70633G03F7/70725G03F7/7085G03F7/70891
    • A projection exposure system (10) for microlithography is provided. The latter comprises: a mask holding device (14) for holding a mask (18) with mask structures (20) disposed on the latter, a substrate holding device (36) for holding a substrate (30), projection optics (26) for imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) which is disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) further comprises a detector (52) arranged for recording an image of the measurement structure (48) produced by imaging of the latter by means of the projection optics (26), the projection exposure system (10) being configured such that during operation of the projection exposure system (10) the imaging the mask structures (20) and the imaging of the measurement structure (48) take place at the same time respectively by means of the projection optics (26), and an evaluation device (54) which is configured to establish a lateral position of the image of the measurement structure (48) in the area of the detector (52) during the exposure process.
    • 提供了一种用于微光刻的投影曝光系统(10)。 后者包括:用于保持具有设置在其上的掩模结构(20)的掩模(18)的掩模保持装置(14),用于保持基板(30)的基板保持装置(36),用于 在曝光处理期间将掩模结构(20)成像到基板(30)上,以及相对于投影曝光系统(10)的参考元件(16)设置在限定位置的测量结构(48) 所述限定位置与所述掩模保持装置(14)的位置机械地脱离。 投影曝光系统(10)还包括检测器(52),其被布置用于通过投影光学器件(26)对由后者进行成像而产生的测量结构(48)的图像进行记录,所述投影曝光系统(10) 被配置为使得在投影曝光系统(10)的操作期间,分别通过投影光学器件(26)同时进行掩模结构(20)的成像和测量结构(48)的成像,并且 评估装置(54),其被配置为在曝光处理期间在所述检测器(52)的区域中建立所述测量结构(48)的图像的横向位置。