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1. 发明申请

WO2008112064A2 LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES AND METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 审中-公开
标题翻译：具有电流减少结构的发光装置和形成具有减少电流结构的发光装置的方法
公开(公告)号：WO2008112064A2
公开(公告)日：2008-09-18
申请号：PCT/US2008/002140
申请日：2008-02-19
申请人： CREE, INC. , EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
发明人： EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译：发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域或n型半导体层并且与非透明特征对准。导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域地区。

2. 发明申请

WO2006011936A2 LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES AND METHODS OF FABRICATING LIGHT EMITTING DEVICES HAVING CURRENT BLOCKING STRUCTURES 审中-公开
标题翻译：具有电流阻塞结构的发光装置和制造具有电流阻塞结构的发光装置的方法
公开(公告)号：WO2006011936A2
公开(公告)日：2006-02-02
申请号：PCT/US2005/010868
申请日：2005-03-30
申请人： CREE, INC. , HABERERN, Kevin , BERGMANN, Michael, John , MIECZKOWSKI, Van , EMERSON, David, Todd
发明人： HABERERN, Kevin , BERGMANN, Michael, John , MIECZKOWSKI, Van , EMERSON, David, Todd
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01S5/0421 , H01S5/2063 , H01S5/2068 , H01S5/32341
摘要： Light emitting devices and methods of fabricating light emitting devices having a current blocking mechanism below the wire bond pad are provided. The current blocking mechanism may be a reduced conduction region in an active region of the device. The current blocking mechanism could be a damage region of a layer on which a contact is formed. The current blocking mechanism could be a Schottky contact between an ohmic contact and the active region of the device. A semiconductor junction, such as a PN junction could also be provided between the ohmic contact and the active region.
摘要翻译：提供了发光器件和制造在引线接合焊盘下方具有电流阻挡机构的发光器件的方法。电流阻塞机构可以是器件的有源区域中的导通区域减小。电流阻塞机构可以是形成触点的层的损伤区域。电流阻塞机制可以是欧姆接触和器件的有源区域之间的肖特基接触。还可以在欧姆接触和有源区之间提供诸如PN结的半导体结。

3. 发明申请

WO2006130392A1 DEEP ULTRAVIOLET LIGHT EMITTING DEVICES AND METHODS OF FABRICATING DEEP ULTRAVIOLET LIGHT EMITTING DEVICES 审中-公开
标题翻译：深层超紫外线发光装置和制造深层超紫外线发光装置的方法
公开(公告)号：WO2006130392A1
公开(公告)日：2006-12-07
申请号：PCT/US2006/019951
申请日：2006-05-23
申请人： CREE, INC. , EMERSON, David Todd , BERGMANN, Michael John , ABARE, Amber , HABERERN, Kevin
发明人： EMERSON, David Todd , BERGMANN, Michael John , ABARE, Amber , HABERERN, Kevin
IPC分类号： H01L33/00 , H01S5/343
CPC分类号： H01L33/12 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least 4 % are provided. Wall plug efficiencies may be at least 5 % or at least 6 %. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least 2 % are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least 0.4 % are provided. Light emitting devices and method of fabricating light emitting devices having a peak output wavelength of not greater than 350 nm and an output power of at least 5 mW, having a peak outpu wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 μA/μm2 are also provided. The semiconductor light emitting devices may have a direct current lifetime of at least 100 hours, at least 500 hours or at least 1000 hours.
摘要翻译：提供发光器件和制造发射波长小于360nm并具有至少4％的插塞效率的发光器件的方法。墙壁插头效率可以至少为5％或至少为6％。还提供了发光器件和制造发射器件的方法，其发射波长小于345nm，壁插头效率至少为2％。提供了发射波长小于330nm，壁塞效率至少为0.4％的发光器件的发光器件和方法。发光器件和制造具有不大于350nm的峰值输出波长和至少5mW的输出功率的发光器件的方法，具有345nm或更小的峰值输出波长和至少3mW的输出功率还提供了在小于约0.35μA/μm2的电流密度下的330nm或更小的峰值输出波长和至少0.3mW的输出功率。半导体发光器件可以具有至少100小时，至少500小时或至少1000小时的直流电寿命。

4. 发明申请

WO2012099791A3 LIGHT EMITTING DIODES WITH LOW JUNCTION TEMPERATURE 审中-公开
公开(公告)号：WO2012099791A3
公开(公告)日：2012-07-26
申请号：PCT/US2012/021253
申请日：2012-01-13
申请人： CREE, INC. , BERGMANN, Michael John , WILLIAMS, Christopher D. , SCHNEIDER, Kevin Shawne , HABERERN, Kevin , DONOFRIO, Matthew
发明人： BERGMANN, Michael John , WILLIAMS, Christopher D. , SCHNEIDER, Kevin Shawne , HABERERN, Kevin , DONOFRIO, Matthew
IPC分类号： H01L33/00
摘要： A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip.

5. 发明申请

WO2011143002A1 SEMICONDUCTOR DEVICES HAVING GATES INCLUDING OXIDIZED NICKEL AND RELATED METHODS OF FABRICATING THE SAME 审中-公开
标题翻译：具有包含氧化镍的门的半导体器件及其相关方法
公开(公告)号：WO2011143002A1
公开(公告)日：2011-11-17
申请号：PCT/US2011/034894
申请日：2011-05-03
申请人： CREE, INC. , MIECZKOWSKI, Van , HAGLEITNER, Helmut , HABERERN, Kevin
发明人： MIECZKOWSKI, Van , HAGLEITNER, Helmut , HABERERN, Kevin
IPC分类号： H01L29/78
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/475 , H01L29/66871 , H01L29/7786 , H01L29/812 , H01L29/872
摘要： Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein.
摘要翻译：提供肖特基势垒半导体器件，其包括宽带隙半导体层和宽带隙半导体层上的栅极。栅极包括在包括氧化镍（NiO）层的宽带隙半导体层上的金属层。本文还提供了相关制造装置的方法。

6. 发明申请

WO2006014996A3 ULTRA-THIN OHMIC CONTACTS FOR P-TYPE NITRIDE LIGHT EMITTING DEVICES AND METHODS OF FORMING 审中-公开
公开(公告)号：WO2006014996A3
公开(公告)日：2006-02-09
申请号：PCT/US2005/026558
申请日：2005-07-27
申请人： CREE, INC. , RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
发明人： RAFFETTO, Mark , BHARATHAN, Jayesh , HABERERN, Kevin , BERGMANN, Michael , EMERSON, David , IBBETSON, James , LI, Ting
IPC分类号： H01L33/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 A and a specific contact resistivity less than about 10 -3 ohm-cm 2 .

7. 发明申请

WO2017180393A9 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开
公开(公告)号：WO2017180393A9
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/00 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62
摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and optionally by filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

8. 发明申请

WO2017180393A2 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开
标题翻译：高密度像素化LED及其装置和方法
公开(公告)号：WO2017180393A2
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60
摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and optionally by filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
摘要翻译：至少一个LED阵列（例如，以倒装芯片配置）由具有用至少一种荧光材料覆盖的光提取表面的衬底支撑。与LED之间的间隙配准的光分离元件被配置为减少不同LED和/或发光材料区域的发射之间的相互作用，以减少散射和/或光学串扰，由此保持所得发射的象素样分辨率。可以通过机械锯切或蚀刻来形成光分离元件，以在衬底中限定凹槽或凹槽，并且可选地通过用光反射或光吸收材料填充凹槽或凹槽。衬底外部的光分离元件可以通过光刻图案化和牺牲材料的蚀刻和/或通过3D打印来限定。

9. 发明申请

WO2017180393A3 HIGH DENSITY PIXELATED MULTI-LED CHIP, DEVICES INCORPORATING IT, AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：高密度像素化多发光二极管芯片，包含它的器件以及用于制造该器件的方法
公开(公告)号：WO2017180393A3
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/00 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62
摘要： At least one array of light emitting diodes (LEDs, 10; e.g., in a flip chip configuration) is supported by a substrate (15) having a light extraction surface (11) overlaid with at least one lumiphoric material (85). Light segregation elements (74) registered with gaps (70) between LEDs (10) are configured to reduce interaction between light emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements (74) may be formed by mechanical sawing or etching to define grooves or recesses (72) in the substrate (15), and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to the substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
摘要翻译：至少一个发光二极管阵列（LED，10;例如以倒装芯片构造）由具有光提取表面（11）的基板（15）支撑，所述光提取表面（11）覆盖有至少一个荧光材料（85）。与LED（10）之间的间隙（70）配准的光分离元件（74）被配置为减少不同LED和/或发光材料区域的光发射之间的相互作用，以减少散射和/或光学串扰，从而保持像素类似由此产生的排放。可以通过机械锯切或蚀刻来形成光分离元件（74），以限定衬底（15）中的凹槽或凹槽（72），并用光反射或光吸收材料填充凹槽或凹槽。基板外部的光分离元件可以通过光刻图案化和牺牲材料的蚀刻和/或通过3D打印来限定。

10. 发明申请

WO2013154818A1 WAFER LEVEL PACKAGING OF MULTIPLE LIGHT EMITTING DIODES (LEDS) ON A SINGLE CARRIER DIE 审中-公开
标题翻译：多功能发光二极管（LED）在单载波片上的水平包装
公开(公告)号：WO2013154818A1
公开(公告)日：2013-10-17
申请号：PCT/US2013/033685
申请日：2013-03-25
申请人： CREE, INC.
发明人： BERGMANN, Michael John , HABERERN, Kevin , DILLON, Alan Wellford
IPC分类号： H01L33/48
CPC分类号： H01L33/50 , H01L24/14 , H01L24/81 , H01L24/94 , H01L27/156 , H01L33/0079 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/486 , H01L33/60 , H01L33/62 , H01L33/64 , H01L2224/13013 , H01L2224/13014 , H01L2224/131 , H01L2224/13147 , H01L2224/13639 , H01L2224/1403 , H01L2224/14051 , H01L2224/1411 , H01L2224/14131 , H01L2224/14155 , H01L2224/14177 , H01L2224/81193 , H01L2224/81203 , H01L2224/81805 , H01L2224/81895 , H01L2224/94 , H01L2924/00 , H01L2924/00014 , H01L2924/0002 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0033 , H01L2224/81
摘要： An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide multiple LED dies that are joined to a single carrier die. The multiple LED dies on the single carrier die are connected in series and/or in parallel by interconnection in the LED dies and/or in the single carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area. Related devices and fabrication methods are described.
摘要翻译： LED晶片包括LED基板上的LED管芯。 LED晶片和载体晶片接合。与载体晶片接合的LED晶片成形。将波长转换材料施加到成形的LED晶片上。进行分割以提供连接到单个载体裸片的多个LED管芯。单个载体裸片上的多个LED管芯通过LED管芯和/或单载体管芯中的互连串联连接和/或并联连接。单个设备可以安装在LED灯具中，以提供每单位面积的高光输出。描述相关的装置和制造方法。

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