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1. 发明申请

WO2017180393A9 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开
公开(公告)号：WO2017180393A9
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/00 , H01L33/38 , H01L33/44 , H01L33/58 , H01L33/62
摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and optionally by filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

2. 发明申请

WO2003010833A2 FLIP CHIP BONDING OF LIGHT EMITTING DEVICES AND LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 审中-公开
标题翻译：发光装置的闪烁芯片粘合和适用于片芯接合的发光装置
公开(公告)号：WO2003010833A2
公开(公告)日：2003-02-06
申请号：PCT/US2002/023120
申请日：2002-07-22
申请人： CREE, INC. , CREE LIGHTING COMPANY
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerry , ANDREWS, Peter
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

3. 发明申请

WO2020136624A2 LASER-ASSISTED METHOD FOR PARTING CRYSTALLINE MATERIAL 审中-公开
公开(公告)号：WO2020136624A2
公开(公告)日：2020-07-02
申请号：PCT/IB2019/061412
申请日：2019-12-27
申请人： CREE, INC.
发明人： DONOFRIO, Matthew , EDMOND, John , GOLAKIA, Harshad , MAYER, Eric
IPC分类号： B23K26/53 , H01L21/02
摘要： A crystalline material processing method includes forming subsurface laser damage at a first average depth position to form cracks in the substrate interior propagating outward from at least one subsurface laser damage pattern, followed by imaging the substrate top surface, analyzing the image to identify a condition indicative of presence of uncracked regions within the substrate, and taking one or more actions responsive to the analyzing. One action includes changing an instruction set for producing subsequent laser damage formation (at second or subsequent average depth positions), without necessarily forming additional damage at the first depth position. Another action includes forming additional subsurface laser damage at the first depth position. The substrate surface is illuminated with a diffuse light source arranged perpendicular to a primary substrate flat and positioned to a first side of the substrate, and imaged with an imaging device positioned to an opposing second side of the substrate.

4. 发明申请

WO2017180393A2 HIGH DENSITY PIXELATED LED AND DEVICES AND METHODS THEREOF 审中-公开
标题翻译：高密度像素化LED及其装置和方法
公开(公告)号：WO2017180393A2
公开(公告)日：2017-10-19
申请号：PCT/US2017/026163
申请日：2017-04-05
申请人： CREE, INC.
发明人： EDMOND, John , DONOFRIO, Matthew , REIHERZER, Jesse , ANDREWS, Peter, Scott , CLARK, Joseph, G. , HABERERN, Kevin
IPC分类号： H01L27/15 , H01L33/46 , H01L33/50 , H01L33/60
摘要： At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and optionally by filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.
摘要翻译：至少一个LED阵列（例如，以倒装芯片配置）由具有用至少一种荧光材料覆盖的光提取表面的衬底支撑。与LED之间的间隙配准的光分离元件被配置为减少不同LED和/或发光材料区域的发射之间的相互作用，以减少散射和/或光学串扰，由此保持所得发射的象素样分辨率。可以通过机械锯切或蚀刻来形成光分离元件，以在衬底中限定凹槽或凹槽，并且可选地通过用光反射或光吸收材料填充凹槽或凹槽。衬底外部的光分离元件可以通过光刻图案化和牺牲材料的蚀刻和/或通过3D打印来限定。

5. 发明申请

WO2009123726A3 EMISSION TUNING METHODS AND DEVICES FABRICATED UTILIZING METHODS 审中-公开
公开(公告)号：WO2009123726A3
公开(公告)日：2009-10-08
申请号：PCT/US2009/002039
申请日：2009-03-31
申请人： CREE, INC. , CHITNIS, Ashay , EDMOND, John , BRITT, Jeffrey, C. , KELLER, Bernd, P. , EMERSON, David, T. , BERGMANN, Michael, John , CABALU, Jasper, S.
发明人： CHITNIS, Ashay , EDMOND, John , BRITT, Jeffrey, C. , KELLER, Bernd, P. , EMERSON, David, T. , BERGMANN, Michael, John , CABALU, Jasper, S.
IPC分类号： H01L33/50
摘要： A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer. The emission characteristics of the LED chips in the wafer can be tuned to the desired range by micro-machining the conversion material over the LEDs.

6. 发明申请

WO2003010798A2 BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES AND COLLETS FOR BONDING OF LIGHT EMITTING DIODES HAVING SHAPED SUBSTRATES 审中-公开
标题翻译：具有成形基板的发光二极管和用于粘合具有成形基板的发光二极管的收集器的结合
公开(公告)号：WO2003010798A2
公开(公告)日：2003-02-06
申请号：PCT/US2002/023067
申请日：2002-07-22
申请人： CREE, INC. , CREE LIGHTING COMPANY
发明人： SLATER, David , BHARATHAN, Jayesh , EDMOND, John , RAFFETTO, Mark , MOHAMMED, Anwar , NEGLEY, Gerry , ANDREWS, Peter
IPC分类号： H01L21/00
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
摘要翻译：提供了具有不规则结构的倒装芯片安装的发光器件的接合。具有成形衬底的发光二极管通过以使得衬底内的剪切力不超过衬底的失效阈值的方式向衬底施加力来接合到子衬底。通过向与发光二极管的运动方向倾斜的发光二极管的衬底的表面施加力以将发光二极管热粘合到基座上，可以提供将发光二极管结合到基座上。还提供用于将成形衬底粘合到基座的夹具和用于将成形衬底粘合到基座的系统。

7. 发明申请

WO2010126592A1 LED PACKAGE WITH INCREASED FEATURE SIZES 审中-公开
标题翻译： LED包装具有增加的特征尺寸
公开(公告)号：WO2010126592A1
公开(公告)日：2010-11-04
申请号：PCT/US2010/001255
申请日：2010-04-27
申请人： CREE, INC. , EMERSON, David , KELLER, Bernd , HUSSELL, Christopher , SALTER, Amber , COLLINS, Brian , BERGMANN, Michael , EDMOND, John , TARSA, Eric , ANDREWS, Peter
发明人： EMERSON, David , KELLER, Bernd , HUSSELL, Christopher , SALTER, Amber , COLLINS, Brian , BERGMANN, Michael , EDMOND, John , TARSA, Eric , ANDREWS, Peter
IPC分类号： H01L33/58 , H01L33/64 , H01L33/20
CPC分类号： H01L33/58 , H01L33/20 , H01L33/486 , H01L33/54 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2924/01019 , H01L2924/01087 , H01L2924/00014
摘要： A light emitting diode (LED) package (30) having increased feature sizes for improved luminous flux and efficacy. A LED chip (34) is disposed on a submount (32) with a lens (70) that covers the LED chip. In some cases, the ratio of the width of the light LED chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to • emit light more efficiently. Some packages, include submounts having dimensions greater than 3.5 mm per 3.5 mm used in conjunction with larger LED chips. Materials having high thermal conductivities are used to fabricate the submounts, such as APN, providing the package with better thermal management.
摘要翻译：一种发光二极管（LED）封装（30），其具有增加的特征尺寸以改善光通量和功效。 LED芯片（34）设置在具有覆盖LED芯片的透镜（70）的底座（32）上。在一些情况下，光LED芯片的宽度与所述透镜在给定方向上的宽度的比率为0.5或更大。增加的特征尺寸可使包装更有效地发光。一些包装，包括尺寸大于3.5 mm / 3.5 mm的底座，与较大的LED芯片结合使用。使用具有高导热性的材料来制造诸如APN的底座，为封装提供更好的热管理。

8. 发明申请

WO2010077590A2 LIGHT EMITTING DIODE WITH A DIELECTRIC MIRROR HAVING A LATERAL CONFIGURATION 审中-公开
标题翻译：具有具有侧向配置的电介质反射镜的发光二极管
公开(公告)号：WO2010077590A2
公开(公告)日：2010-07-08
申请号：PCT/US2009/066938
申请日：2009-12-07
申请人： CREE, INC. , DONOFRIO, Matthew , EDMOND, John , IBBETSON, James , TING, Li
发明人： DONOFRIO, Matthew , EDMOND, John , IBBETSON, James , TING, Li
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/38 , H01L33/145 , H01L33/42 , H01L33/46
摘要： A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure.
摘要翻译：公开了一种发光二极管，其包括有源结构，有源结构上的第一欧姆接触和与第一欧姆接触相对的有源结构上的透明导电氧化物层。透明导电氧化物层具有比所述活性结构更大的占地面积。电介质反射镜位于与所述有源结构相对的透明导电氧化物层上，并且第二触点位于与电介质反射镜相对的透明导电氧化物层上并与有源结构分离。

9. 发明申请

WO2008112064A2 LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES AND METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES 审中-公开
标题翻译：具有电流减少结构的发光装置和形成具有减少电流结构的发光装置的方法
公开(公告)号：WO2008112064A2
公开(公告)日：2008-09-18
申请号：PCT/US2008/002140
申请日：2008-02-19
申请人： CREE, INC. , EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
发明人： EMERSON, David Todd , HABERERN, Kevin , BERGMANN, Michael John , SLATER, David , DONOFRIO, Matthew , EDMOND, John
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L24/05 , H01L33/14 , H01L33/38 , H01L2224/49107 , H01L2933/0016
摘要： A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region.
摘要翻译：发光器件包括p型半导体层，n型半导体层和n型半导体层和p型半导体层之间的有源区。 p型半导体层或与p型半导体层相对的n型半导体层上的非透明特性，例如引线接合焊盘，在p型半导体层中具有导电性降低的区域或n型半导体层并且与非透明特征对准。导电性降低区域可以从与n型半导体层相对的p型半导体层的表面朝向有源区域和/或从与p型半导体层相对的n型半导体层的表面朝向有源区域地区。

10. 发明申请

WO2006091242A1 SUBSTRATE REMOVAL PROCESS FOR HIGH LIGHT EXTRACTION LEDs 审中-公开
标题翻译：用于高亮度提取LED的基板去除工艺
公开(公告)号：WO2006091242A1
公开(公告)日：2006-08-31
申请号：PCT/US2005/036551
申请日：2005-09-15
申请人： CREE, INC.
发明人： EDMOND, John
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0079
摘要： A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs . The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier.
摘要翻译：一种制造发光二极管（LED）的方法包括：在基板晶片上设置多个LED，每个LED具有在具有n型的SiC衬底上形成的III族氮化物材料的n型和p型层层夹在基板和p型层之间。提供具有侧表面以保持LED的导电载体。 LED被倒装安装在导电载体的侧表面上。从LED中去除SiC衬底，使得n型层是最顶层的。相应的触点沉积在每个LED的n型层上，并且载体被分离成使得每个LED与其它LED分离的部分，其中每个LED安装到所述载体的相应部分。

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