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1. 发明申请

WO2004079043A3 SUSCEPTOR APPARATUS FOR INVERTED TYPE MOCVD REACTOR 审中-公开
公开(公告)号：WO2004079043A3
公开(公告)日：2004-09-16
申请号：PCT/US2004/005526
申请日：2004-02-25
申请人： CREE, INC.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , BATRES, Max , COULTER, Michael
IPC分类号： C23C16/458
摘要： The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower (44) having an upper and lower end (45, 43) with the upper end (45) mounted to the top inside surface of the reactor chamber (162) and a susceptor (52) is arranged at the tower's lower end (43). Semiconductor wafers (68) are held adjacent to the susceptor (52) such that heat from the susceptor (52) passes into wafers (68). A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower (104) having an upper and lower end (103, 108). The tower's upper end (103) is mounted to the top inside surface of the reactor chamber (162). A susceptor (110) is housed within a cup (106) and the cup (106) is mounted to the tower's lower end (108).

2. 发明申请

WO2006080958A1 LED WITH CURENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING 审中-公开
标题翻译： LED具有牢固的结构和表面粗糙度
公开(公告)号：WO2006080958A1
公开(公告)日：2006-08-03
申请号：PCT/US2005/036552
申请日：2005-09-15
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.
摘要翻译：具有相关联的p型接触的p型材料层的LED（10），具有相关联的n型接触的n型材料层以及p型层与n型接触之间的有源区（18）型层包括在所述p型材料层和所述n型材料层之一内形成的约束结构（20）。限制结构（20）通常与LED（10）的顶部和主要发射表面上的触点（22）对准，并且基本上防止来自与有源区域（18）重合的区域的光的发射约束结构的面积和顶面接触面（22）。 LED（10）可以包括粗糙化的发射侧表面（25），以进一步增强光提取。

3. 发明申请

WO2005112138A1 LIFT-OFF PROCESS FOR GAN FILMS FORMED ON SIC SUBSTRATES AND DEVICES FABRICATED USING THE METHOD 审中-公开
标题翻译：使用方法制作的SIC基板上形成的GAN膜的提升过程
公开(公告)号：WO2005112138A1
公开(公告)日：2005-11-24
申请号：PCT/US2005/009327
申请日：2005-03-22
申请人： CREE, INC.
发明人： NAKAMURA, Shuji , DENBAARS, Steven
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105
摘要： One embodiment of a method according to the present invention for fabricating a high light extraction photonic device comprises growing a lift-off layer on a substrate and growing an epitaxial semiconductor device structure on the lift-off layer such that the lift-off layer is sandwiched between said device structure and substrate. The epitaxial semiconductor structure comprises an emitter adapted to emit light in response to a bias. The device structure, lift-off layer and substrate is flip-chip mounted on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and lift-off layer. The lift-off layer is removed to separate the substrate from the device structure. Different removal methods can be used such as removal by a photo electrochemical etch or by illuminating the lift-off layer with laser light.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法的一个实施例包括在衬底上生长剥离层并在剥离层上生长外延半导体器件结构，使得剥离层夹在在所述器件结构和衬底之间。外延半导体结构包括适于响应于偏压而发光的发射极。器件结构，剥离层和衬底被倒装安装在基座上，使得外延半导体器件结构夹在子安装座和剥离层之间。去除剥离层以将衬底与器件结构分离。可以使用不同的去除方法，例如通过光电化学蚀刻去除或通过用激光照射剥离层。

4. 发明申请

WO2007018789A1 BLUE LED WITH ROUGHENED HIGH REFRACTIVE INDEX SURFACE LAYER FOR HIGH LIGHT EXTRACTION 审中-公开
标题翻译：蓝光LED，具有高亮度高折射率表面层，用于高光提取
公开(公告)号：WO2007018789A1
公开(公告)日：2007-02-15
申请号：PCT/US2006/024916
申请日：2006-06-26
申请人： CREE, INC. , DENBAARS, Steven, P , IBBETSON, James , NAKAMURA, Shuji
发明人： DENBAARS, Steven, P , IBBETSON, James , NAKAMURA, Shuji
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/42
摘要： A light emitting diode (LED) includes a p-type layer (12) of material, an n-type layer (14) of material and an active layer (16) between the p-type layer (12) and the n-type layer (14) . A roughened layer (18) of transparent material is adjacent one of the p-type layer (12) of material and the n-type layer of material. The roughened layer (18) of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer (68, 88) of conductive material may be between the roughened layer and the n-type or p-type layer.
摘要翻译：发光二极管（LED）包括材料的p型层（12），材料的n型层（14）和p型层（12）和n型层之间的有源层（16）层（14）。透明材料的粗糙层（18）与材料的p型层（12）和n型材料层相邻。透明材料的粗糙层（18）具有接近或基本上等于与透明材料层相邻的材料的折射率的折射率，并且可以是透明氧化物材料或透明导电材料。导电材料的附加层（68,88）可以在粗糙层和n型或p型层之间。

5. 发明申请

WO2005117152A1 METHOD FOR FABRICATING GROUP III NITRIDE DEVICES AND DEVICES FABRICATED USING METHOD 审中-公开
标题翻译：用于制备III族氮化物装置的方法和使用方法织造的装置
公开(公告)号：WO2005117152A1
公开(公告)日：2005-12-08
申请号：PCT/US2005/016987
申请日：2005-05-17
申请人： CREE, INC.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , EDMOND, John , MISHRA, Umesh , SWOBODA, Charles
IPC分类号： H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016
摘要： A method according to the present invention for fabricating high light extraction photonic device comprising growing an epitaxial semiconductor structure on a substrate and depositing a first mirror layer on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first mirror layer and the substrate. Flip-chip mounting the epitaxial semiconductor structure, with its first mirror and substrate on a submount such that the epitaxial semiconductor device structure is sandwiched between the submount and substrate. The substrate is then removed from the epitaxial structure by introducing an etch environment to the substrate. A second mirror layer is deposited on the epitaxial semiconductor structure such that the epitaxial semiconductor structure is sandwiched between the first and second mirror layers. A device according to the present invention comprising a resonant cavity light emitting diode (RCLED) mounted to a submount.
摘要翻译：根据本发明的用于制造高光提取光子器件的方法，包括在衬底上生长外延半导体结构并在外延半导体结构上沉积第一镜层，使得外延半导体结构夹在第一镜层和衬底之间。倒装芯片安装外延半导体结构，其第一反射镜和衬底位于基座上，使得外延半导体器件结构夹在基座和衬底之间。然后通过向衬底引入蚀刻环境，从衬底去除衬底。第二镜层沉积在外延半导体结构上，使得外延半导体结构夹在第一和第二镜层之间。根据本发明的装置包括安装到底座的谐振腔发光二极管（RCLED）。

6. 发明申请

WO2003098667A1 SUSCEPTOR FOR MOCVD REACTOR 审中-公开
标题翻译： MOCVD反应器的SUSCEPTOR
公开(公告)号：WO2003098667A1
公开(公告)日：2003-11-27
申请号：PCT/US2003/013648
申请日：2003-04-30
申请人： CREE INC.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , BATRES, Max , COULTER, Micheal
IPC分类号： H01L21/00
CPC分类号： H01L21/67103 , H01L21/68771
摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
摘要翻译：公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。还公开了一种使用根据本发明的基座的金属有机化学气相沉积反应器。

7. 发明授权

EP1759424B1 LIFT-OFF PROCESS FOR GAN FILMS FORMED ON SILICON CARBIDE SUBSTRATES 有权转让
公开(公告)号：EP1759424B1
公开(公告)日：2019-05-01
申请号：EP05728975.3
申请日：2005-03-22
申请人： Cree, Inc.
发明人： NAKAMURA, Shuji , DENBAARS, Steven
IPC分类号： H01L33/00 , H01L33/46 , H01L33/10

8. 发明授权

EP2267803B1 LED with current confinement structure and surface roughening 有权转让
公开(公告)号：EP2267803B1
公开(公告)日：2020-11-04
申请号：EP10181491.1
申请日：2005-09-15
申请人： Cree, Inc.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/14 , H01L33/22

9. 发明授权

EP1763900B1 METHOD FOR FABRICATING GROUP III NITRIDE DEVICES 有权转让
标题翻译：用于生产III族氮化物器件
公开(公告)号：EP1763900B1
公开(公告)日：2015-06-24
申请号：EP05751127.1
申请日：2005-05-17
申请人： Cree, Inc.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , EDMOND, John , MISHRA, Umesh , SWOBODA, Charles
IPC分类号： H01L33/10 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016

10. 发明授权

EP1849193B1 LED with current confinement structure and surface roughening 有权转让
标题翻译： LED电流限制结构和表面粗糙化
公开(公告)号：EP1849193B1
公开(公告)日：2011-09-14
申请号：EP05806491.6
申请日：2005-09-15
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/14 , H01L33/12
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.

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