专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

EP2267803B1 LED with current confinement structure and surface roughening 有权转让
公开(公告)号：EP2267803B1
公开(公告)日：2020-11-04
申请号：EP10181491.1
申请日：2005-09-15
申请人： Cree, Inc.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/14 , H01L33/22

2. 发明授权

EP1849193B1 LED with current confinement structure and surface roughening 有权转让
标题翻译： LED电流限制结构和表面粗糙化
公开(公告)号：EP1849193B1
公开(公告)日：2011-09-14
申请号：EP05806491.6
申请日：2005-09-15
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/14 , H01L33/12
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.

3. 发明公开

EP1849193A1 LED WITH CURENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING 有权转让
标题翻译： LED电流限制结构和表面粗糙化
公开(公告)号：EP1849193A1
公开(公告)日：2007-10-31
申请号：EP05806491.6
申请日：2005-09-15
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.

4. 发明公开

EP1979956A1 RARE EARTH DOPED LAYER OR SUBSTRATE FOR LIGHT CONVERSION 审中-公开
标题翻译：与变频稀土掺杂层或衬底
公开(公告)号：EP1979956A1
公开(公告)日：2008-10-15
申请号：EP07716922.5
申请日：2007-01-22
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , TARSA, Eric, J. , MACK, Michael , KELLER, Bernd , THIBEAULT, Brian , SAXLER, Adam, W.
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. 'The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.

5. 发明申请

WO2007094928A1 RARE EARTH DOPED LAYER OR SUBSTRATE FOR LIGHT CONVERSION 审中-公开
标题翻译：用于光转换的稀土接地层或基板
公开(公告)号：WO2007094928A1
公开(公告)日：2007-08-23
申请号：PCT/US2007/001731
申请日：2007-01-22
申请人： CREE, INC. , DENBAARS, Steven, P. , TARSA, Eric, J. , MACK, Michael , KELLER, Bernd , THIBEAULT, Brian , SAXLER, Adam, W.
发明人： DENBAARS, Steven, P. , TARSA, Eric, J. , MACK, Michael , KELLER, Bernd , THIBEAULT, Brian , SAXLER, Adam, W.
IPC分类号： H01L33/00
CPC分类号： H01L33/08 , H01L25/0756 , H01L27/15 , H01L33/025 , H01L33/30 , H01L33/343 , H01L33/465 , H01L33/502 , H01L2224/8592 , H01L2924/0002 , H01S5/405 , H01S5/4087 , H01L2924/00
摘要： A solid state light emitting device comprising an emitter structure having an active region of semiconductor material and a pair of oppositely doped layers of semiconductor material on opposite sides of the active region. 'The active region emits light at a predetermined wavelength in response to an electrical bias across the doped layers. An absorption layer of semiconductor material is included that is integral to said emitter structure and doped with at least one rare earth or transition element. The absorption layer absorbs at least some of the light emitted from the active region and re-emits at least one different wavelength of light. A substrate is included with the emitter structure and absorption layer disposed on the substrate.
摘要翻译：一种固态发光器件，包括具有半导体材料的有源区的发射极结构和在该有源区的相对侧上的一对相对掺杂的半导体材料层。 “有源区域响应于跨越掺杂层的电偏压而以预定波长发光。包括与所述发射极结构成一体并掺杂有至少一种稀土或过渡元素的半导体材料的吸收层。吸收层吸收从有源区域发射的至少一些光并且再发射至少一个不同波长的光。发射体结构和衬底上设置的吸收层包括衬底。

6. 发明申请

WO2006080958A1 LED WITH CURENT CONFINEMENT STRUCTURE AND SURFACE ROUGHENING 审中-公开
标题翻译： LED具有牢固的结构和表面粗糙度
公开(公告)号：WO2006080958A1
公开(公告)日：2006-08-03
申请号：PCT/US2005/036552
申请日：2005-09-15
申请人： CREE, INC.
发明人： DENBAARS, Steven, P. , NAKAMURA, Shuji , BATRES, Max
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/145 , H01L33/22 , H01L33/405
摘要： An LED (10) having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region (18) between the p-type layer and the n-type layer, includes a confinement structure (20) that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure (20) is generally aligned with the contact (22) on the top and primary emission surface of the LED (10) and substantially prevents the emission of light from the area of the active region (18) that is coincident with the area of the confinement structure and the top-surface contact (22). The LED (10) may include a roughened emitting side surface (25) to further enhance light extraction.
摘要翻译：具有相关联的p型接触的p型材料层的LED（10），具有相关联的n型接触的n型材料层以及p型层与n型接触之间的有源区（18）型层包括在所述p型材料层和所述n型材料层之一内形成的约束结构（20）。限制结构（20）通常与LED（10）的顶部和主要发射表面上的触点（22）对准，并且基本上防止来自与有源区域（18）重合的区域的光的发射约束结构的面积和顶面接触面（22）。 LED（10）可以包括粗糙化的发射侧表面（25），以进一步增强光提取。

7. 发明授权

EP1234344B1 ENHANCED LIGHT EXTRACTION IN LEDS THROUGH THE USE OF INTERNAL AND EXTERNAL OPTICAL ELEMENTS 失效
公开(公告)号：EP1234344B1
公开(公告)日：2020-12-02
申请号：EP00992180.0
申请日：2000-11-28
申请人： Cree, Inc.
发明人： THIBEAULT, Brian , MACK, Michael , DENBAARS, Steven, P.
IPC分类号： H01L33/00

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式