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1. 发明申请

WO2009088177A2 SILICON-BASED HARDMASK COMPOSITION (SI-SOH; SI-BASED SPIN-ON HARDMASK) AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：基于硅的硬质合金组合物（SI-SOH;基于SI的旋转硬质合金）以及使用其制造半导体集成电路装置的方法
公开(公告)号：WO2009088177A2
公开(公告)日：2009-07-16
申请号：PCT/KR2008007886
申请日：2008-12-31
申请人： CHEIL IND INC , KIM SANG KYUN , CHO HYEON MO , KOH SANG RAN , KIM MI YOUNG , YUN HUI CHAN , CHUNG YONG JIN , KIM JONG SEOB
发明人： KIM SANG KYUN , CHO HYEON MO , KOH SANG RAN , KIM MI YOUNG , YUN HUI CHAN , CHUNG YONG JIN , KIM JONG SEOB
IPC分类号： G03F7/11
CPC分类号： H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
摘要： A silicon-based hardmask composition is provided. The hardmask composition comprises (a) an organosilane polymer and (b) a solvent. The organosilane polymer is represented by Formula 1: { (SiO1.5- Y-SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f (1). In Formula 1, x, y and z represent the relative ratios of the repeating units (SiO1.5- Y-SiO1.5), (R3SiO1.5) and (XSiO1.5) in the polymer and satisfy the relations 0.05 = x = 0.9, 0.05 = y = 0.9, 0 = z = 0.9 and x + y + z = l; e and f represent the ratios of the numbers of the terminal -OH groups and -OR groups bonded to the silicon (Si) atoms to the number of the 2x+y+z silicon (Si) atoms in the polymer, respectively, and satisfy the relations 0.03 = e = 0.2 and 0.03 = f = 0.25; X is a C6-C30 functional group containing at least one substituted or unsubstituted aromatic ring; R3 is a C1-C6 alkyl group; Y is a linking group selected from the group consisting of an aromatic ring, a substituted or unsubstituted linear or branched C1-C20 alkylene group, a C1-C20 alkylene group containing at least one aromatic or heterocyclic ring or having at least one urea or isocyanurate group in the backbone, and a C2-C20 hydrocarbon group containing at least one multiple bond; and R6 is a C1-C6 alkyl group.
摘要翻译：提供硅基硬掩模组合物。硬掩模组合物包含（a）有机硅烷聚合物和（b）溶剂。有机硅烷聚合物由式1表示：{（SiO 1.5-Y-SiO 1.5）x（R 3 SiO 1.5）y（XSiO 1.5）z}（OH）e（OR 6）f（1）。在式1中，x，y和z表示聚合物中重复单元（SiO 1.5 -Y-SiO 1.5），（R 3 SiO 1.5）和（XSiO 1.5）的相对比例，满足0.05 = x = 0.9,0.05 = y = 0.9,0 = z = 0.9，x + y + z = 1; e和f分别代表端基-OH基和与硅（Si）原子键合的-OR基团数与聚合物中2x + y + z硅（Si）原子数的比率，并且满足关系0.03 = e = 0.2和0.03 = f = 0.25; X是含有至少一个取代或未取代的芳环的C 6 -C 30官能团; R3是C1-C6烷基; Y是选自芳环，取代或未取代的直链或支链C 1 -C 20亚烷基的连接基团，含有至少一个芳族或杂环的C 1 -C 20亚烷基或具有至少一个脲或异氰脲酸酯并且含有至少一个多重键的C 2 -C 20烃基; 并且R 6是C 1 -C 6烷基。

2. 发明公开

KR20070093303A ORGANOSILANE COMPOSITION, HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF 无效
标题翻译：有机组合物，根据光刻胶涂覆的HARDMASK组合物及其制造集成电路装置的方法
公开(公告)号：KR20070093303A
公开(公告)日：2007-09-18
申请号：KR20060025922
申请日：2006-03-22
申请人： CHEIL IND INC
发明人： UH DONG SEON , YUN HUI CHAN , LEE JIN KUK , LIM SANG HAK , KIM SANG KYUN , OH CHANG IL , KIM JONG SEOB
IPC分类号： C08G77/52 , C07F7/00 , C08G77/00
摘要： An organosilane-based composition is provided to form an anti-reflection composition which has high etching selectivity and sufficient multi-etching resistance and minimizes reflectivity between a resist and a lower layer. An organosilane-based composition comprises an organosilane polymer and a hydrolysate produced by reacting at least any one selected from compounds represented by the formula 1: [RO]3Si-(CH2)n-R' and formula 2: [RO]3Si-R' with a compound represented by the following formula 3: R1-Si-(OR2)a(OR3)b(OR4)c. In the formula 1, R is a methyl group or ethyl group, n is 1 to 5, and R' is an aromatic group or substituted aromatic group. In the formula 2, R is a methyl group or ethyl group and R' is an aromatic group or substituted aromatic group. In the formula 3, R1 is a methyl group or ethyl group, each of R2-R4 is a C1-4 alkyl group or phenyl group and is identical to or different from one another, a, b, and c satisfy the relations of 0
摘要翻译：提供了一种基于有机硅烷的组合物以形成具有高蚀刻选择性和足够的多次蚀刻电阻并使抗蚀剂和下层之间的反射率最小化的抗反射组合物。基于有机硅烷的组合物包含有机硅烷聚合物和通过使选自由式1表示的至少一种化合物：[RO] 3Si-（CH2）nR'和式2：[RO] 3Si-R'与式由下式3表示的化合物：R1-Si-（OR2）a（OR3）b（OR4）c。式1中，R为甲基或乙基，n为1〜5，R'为芳香族基团或取代芳香族基团。式2中，R为甲基或乙基，R'为芳香族基团或取代芳香族基团。在式3中，R 1是甲基或乙基，R 2 -R 4各自为C 1-4烷基或苯基，且彼此相同或不同，a，b和c满足关系式0

3. 发明公开

KR20070095736A HARDMASK COMPOSITION COATED UNDER PHOTORESIST COMPRISING ORGANOSILANE POLYMER AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF 审中-公开
标题翻译：包含有机聚合物的光电复合材料的硬聚合物组合物及其制造集成电路装置的方法
公开(公告)号：KR20070095736A
公开(公告)日：2007-10-01
申请号：KR20060049341
申请日：2006-06-01
申请人： CHEIL IND INC
发明人： UH DONG SEON , YUN HUI CHAN , LEE JIN KUK , LIM SANG HAK , KIM SANG KYUN , OH CHANG IL , KIM JONG SEOB
IPC分类号： G03F7/11 , C08G77/00 , G03F7/004
CPC分类号： G03F7/091 , C08G77/00 , G03F7/11
摘要： A hard mask composition for a resist under layer, a method for preparing a semiconductor integrated circuit device by using the composition, and a semiconductor integrated circuit device prepared by the method are provided to improve the reproducibility of pattern, the adhesion to a resist, the resistance against a developing layer and storage stability. A hard mask composition comprises an organosilane-based polymer which is prepared by the reaction of at least one kind of compound represented by [R1O]3Si-R2 and has a polydispersity of 1.1-2; a solvent; and optionally an acid catalyst, wherein R1 is a C1-C5 alkyl group, an acetoxy group, or an oxime group; and R2 is H, a C1-C5 alkyl group, an aryl group, or an aralkyl group. Preferably the organosilane-based polymer is represented by the formula 2, wherein R2 is H, a C1-C5 alkyl group, an aryl group, or an aralkyl group.
摘要翻译：用于抗蚀剂层的硬掩模组合物，通过使用该组合物制备半导体集成电路器件的方法以及通过该方法制备的半导体集成电路器件被提供以提高图案的再现性，对抗蚀剂的粘附性，对显影层的抵抗力和储存稳定性。硬掩模组合物包含通过由[R 1 O] 3 Si-R 2表示的至少一种化合物与多分散性为1.1-2的反应制备的有机硅烷系聚合物; 溶剂; 和任选的酸催化剂，其中R1是C1-C5烷基，乙酰氧基或肟基; R2为H，C1-C5烷基，芳基或芳烷基。优选地，有机硅烷基聚合物由式2表示，其中R 2是H，C 1 -C 5烷基，芳基或芳烷基。

4. 发明公开

EP2095188A4 HARDMASK COMPOSITION FOR PROCESSING RESIST UNDERLAYER FILM, PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE HARDMASK COMPOSITION, AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE PRODUCED BY THE PROCESS 有权
标题翻译：要处理的HART MASK抗蚀剂组合物下层膜，工艺用于生产集成的半导体组件中使用硬掩模及构成MADE半导体集成电路部件的制造方法
公开(公告)号：EP2095188A4
公开(公告)日：2010-06-16
申请号：EP07834200
申请日：2007-11-21
申请人： CHEIL IND INC
发明人： KIM MI YOUNG , KIM SANG KYUN , LIM SANG HAK , KOH SANG RAN , YUN HUI CHAN , KIM DO HYEON , UH DONG SEON , KIM JONG SEOB
IPC分类号： G03F7/004
CPC分类号： C08G77/50 , C08L83/14 , G03F7/11 , G03F7/2022 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0271 , H01L21/31144 , H01L21/3122

5. 发明公开

EP2229607A4 SILICON-BASED HARDMASK COMPOSITION (SI-SOH; SI-BASED SPIN-ON HARDMASK) AND PROCESS OF PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING THE SAME 审中-公开
标题翻译：硅基底HART面膜组合物（SPIN ON硬掩模ON SI SOH和Si碱）和制造器件具有集成的半导体电路THEREOF方法
公开(公告)号：EP2229607A4
公开(公告)日：2012-01-18
申请号：EP08869469
申请日：2008-12-31
申请人： CHEIL IND INC
发明人： KIM SANG KYUN , CHO HYEON MO , KOH SANG RAN , KIM MI YOUNG , YUN HUI CHAN , CHUNG YONG JIN , KIM JONG SEOB
IPC分类号： G03F7/11
CPC分类号： H01L21/31144 , C08G77/16 , C08G77/50 , C08G77/52 , C08G77/70 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/0332 , H01L21/3081 , H01L21/3122 , H01L21/32139
摘要： A silicon-based hardmask composition, including an organosilane polymer represented by Formula 1: {(SiO1.5-Y-SiO1.5)x(R3SiO1.5)y(XSiO1.5)z}(OH)e(OR6)f(1).
摘要翻译：甲硅氧烷基硬掩模组合物，包括在由式1表示的有机硅烷聚合物：{（SiO1.5-Y-SiO1.5）×（R3SiO1.5）Y（XSiO1.5）Z}（OH）E（OR 6）的F （1）。

6. 发明专利

DE112008004068B4 Hartmaskenzusammensetzung mit verbesserter Lagerstabilität zum Bilden eines Resist-Unterschichtsfilms 未知
公开(公告)号：DE112008004068B4
公开(公告)日：2019-11-14
申请号：DE112008004068
申请日：2008-12-31
申请人： CHEIL IND INC
发明人： KOH SANG-RAN , KIM SANG KYUN , LIM SANG HAK , KIM MI YOUNG , YUN HUI CHAN , KIM DO HYEON , UH DONG SEON , KIM JONG SEOB
IPC分类号： G03F7/075
摘要： Hartmaskenzusammensetzung zum Bilden eines Resist-Unterschichtsfilms, umfassend(A) ein Organosilanpolymer, wobei das Organosilanpolymer (A) ein Polykondensat von Hydrolysaten von Verbindungen ist, die durch Formel 1 und 2 dargestellt sind:worin Ar eine funktionelle C-C-Gruppe ist, die mindestens einen substituierten oder nichtsubstituierten aromatischen Ring enthält, und Reine C-C-Alkylgruppe ist; undworin Reine C-C-Alkylgruppe ist und Reine C-C-Alkylgruppe oder ein Wasserstoffatom ist, und(B) mindestens einen Stabilisator, der ausgewählt ist aus der Gruppe, bestehend aus Essigsäureanhydrid, Methylacetoacetat, Propionsäureanhydrid, Ethyl-2-ethylacetoacetat, Buttersäureanhydrid, Valeriansäureanhydrid, 2-Methylbuttersäureanhydrid, Nonanol, Decanol, Undecanol, Dodecanol, Propylenglykolpropylether, Propylenglykolethylether, Propylenglykolmethylether, Propylenglykol, Phenyltrimethoxysilan, Diphenylhexamethoxydisiloxan, Diphenylhexaethoxydisiloxan, Dioctyltetramethyldisiloxan, Hexamethyltri siloxan, Tetramethyldisiloxan, Decamethyltetrasiloxan, Dodecamethylpentasiloxan und Hexamethyldisiloxan, und wobei der Stabilisatoranteil 1 bis 30 Gewichtsteile, bezogen auf 100 Gewichtsteile des Organosilanpolymer, ausmacht.

7. 发明专利

DE112008004068T5 Hartmaskenzusammensetzung mit verbesserter Lagerstabilität zum Bilden eines Resist-Unterschichtsfilms 未知
公开(公告)号：DE112008004068T5
公开(公告)日：2013-03-07
申请号：DE112008004068
申请日：2008-12-31
申请人： CHEIL IND INC
发明人： KOH SANG-RAN , KIM SANG KYUN , LIM SANG HAK , KIM MI YOUNG , YUN HUI CHAN , KIM DO HYEON , UH DONG SEON , KIM JONG SEOB
IPC分类号： G03F7/075
摘要： Offenbart wird eine Hartmaskenzusammensetzung zum Bilden eines Resist-Unterschichtsfilms. Die Hartmaskenzusammensetzung umfasst (A) ein Organosilanpolymer und (B) mindestens einen Stabilisator. Die Hartmaskenzusammensetzung ist während der Lagerung sehr stabil und ermöglicht dank ihrer ausgezeichneten Hartmaskeneigenschaften die Übertragung eines guten Musters auf eine Materialschicht.

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