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    • 2. 发明公开
    • ORGANOSILANE COMPOSITION, HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF
    • 有机组合物,根据光刻胶涂覆的HARDMASK组合物及其制造集成电路装置的方法
    • KR20070093303A
    • 2007-09-18
    • KR20060025922
    • 2006-03-22
    • CHEIL IND INC
    • UH DONG SEONYUN HUI CHANLEE JIN KUKLIM SANG HAKKIM SANG KYUNOH CHANG ILKIM JONG SEOB
    • C08G77/52C07F7/00C08G77/00
    • An organosilane-based composition is provided to form an anti-reflection composition which has high etching selectivity and sufficient multi-etching resistance and minimizes reflectivity between a resist and a lower layer. An organosilane-based composition comprises an organosilane polymer and a hydrolysate produced by reacting at least any one selected from compounds represented by the formula 1: [RO]3Si-(CH2)n-R' and formula 2: [RO]3Si-R' with a compound represented by the following formula 3: R1-Si-(OR2)a(OR3)b(OR4)c. In the formula 1, R is a methyl group or ethyl group, n is 1 to 5, and R' is an aromatic group or substituted aromatic group. In the formula 2, R is a methyl group or ethyl group and R' is an aromatic group or substituted aromatic group. In the formula 3, R1 is a methyl group or ethyl group, each of R2-R4 is a C1-4 alkyl group or phenyl group and is identical to or different from one another, a, b, and c satisfy the relations of 0
    • 提供了一种基于有机硅烷的组合物以形成具有高蚀刻选择性和足够的多次蚀刻电阻并使抗蚀剂和下层之间的反射率最小化的抗反射组合物。 基于有机硅烷的组合物包含有机硅烷聚合物和通过使选自由式1表示的至少一种化合物:[RO] 3Si-(CH2)nR'和式2:[RO] 3Si-R'与式 由下式3表示的化合物:R1-Si-(OR2)a(OR3)b(OR4)c。 式1中,R为甲基或乙基,n为1〜5,R'为芳香族基团或取代芳香族基团。 式2中,R为甲基或乙基,R'为芳香族基团或取代芳香族基团。 在式3中,R 1是甲基或乙基,R 2 -R 4各自为C 1-4烷基或苯基,且彼此相同或不同,a,b和c满足关系式0
    • 6. 发明公开
    • ORGANOSILANE COMPOSITION, HARDMASK COMPOSITION COATED UNDER PHOTORESIST AND PROCESS OF PRODUCING INTEGRATED CIRCUIT DEVICES USING THEREOF
    • 有机组合物,根据光刻胶涂覆的HARDMASK组合物及其制造集成电路装置的方法
    • KR20070095693A
    • 2007-10-01
    • KR20060026204
    • 2006-03-22
    • CHEIL IND INC
    • UH DONG SEONLEE JIN KUKKIM MIN SOOYOON KYONG HONAM IRINAOH CHANG ILKIM JONG SEOB
    • C08G77/00C08F8/12C08G77/06G03F7/004
    • C08G77/00C08F8/12C08G77/06G03F7/0757G03F7/091
    • An organosilane-based compound, a hard mask composition for a resist under layer containing the compound, a method for preparing a semiconductor integrated circuit device by using the composition, and a semiconductor integrated circuit device prepared by the method are provided to improve the film characteristics and storage stability of the composition and to enhance the adhesion to a resist and the resistance against a developer. An organosilane-based compound comprises a hydrolyzate obtained by reacting at least one selected from a compound represented by [RO]3Si-(CH2)n-R' (wherein R is a methyl group or an ethyl group; n is 1-5; and R' is an aromatic group or a substituted aromatic group) and a compound represented by [RO]3Si-R' (wherein R is a methyl group or an ethyl group; and R' is an aromatic group or a substituted aromatic group) and at least one selected from a compound represented by R1-Si-(OR2)a(OR3)b(OR4)c (wherein R1 is a methyl group or an ethyl group; R2 to R4 are identical or different one another and are a C1-C4 alkyl group or a phenyl group; 0
    • 有机硅烷系化合物,含有该化合物的抗蚀剂下层的硬掩模组合物,使用该组合物制备半导体集成电路器件的方法以及通过该方法制备的半导体集成电路器件被提供以提高膜特性 和组合物的储存稳定性和增强对抗蚀剂的粘附性和对显影剂的抵抗力。 有机硅烷类化合物包含通过使选自由[RO] 3 Sii-(CH 2)n R'(其中R为甲基或乙基; n为1-5; '是由[RO] 3 Si-R'(其中R是甲基或乙基,R'是芳族基团或取代的芳族基团)表示的化合物和 选自由R 1-Si-(OR 2)a(OR 3)b(OR 4)c(其中R 1为甲基或乙基; R 2至R 4)彼此相同或不同的化合物表示的化合物中的至少一种, C4烷基或苯基; 0