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1. 发明申请

US20100134101A1 BROAD-RANGE MAGNETIC SENSOR AND MANUFACTURING PROCESS THEREOF 审中-公开
标题翻译：广域范围磁传感器及其制造工艺
公开(公告)号：US20100134101A1
公开(公告)日：2010-06-03
申请号：US12628448
申请日：2009-12-01
申请人： CATERINA RIVA , Marco Morelli , Marco Marchesi
发明人： CATERINA RIVA , Marco Morelli , Marco Marchesi
IPC分类号： G01R33/06
CPC分类号： G01R33/05 , G01R33/07
摘要： A magnetic sensor is formed by a fluxgate sensor and by at least one Hall sensor integrated in a same integrated device, wherein the magnetic core of the fluxgate sensor is formed by a magnetic region that operates also as a concentrator for the Hall sensor. The magnetic region is manufactured in a post-machining stage on the metallization layers wherein the energizing coil and sensing coil of the fluxgate sensor are formed; the energizing and sensing coils are formed on a semiconductor substrate housing the conductive regions of the Hall sensor.
摘要翻译：磁传感器由磁通门传感器和集成在同一集成器件中的至少一个霍尔传感器形成，其中磁通门传感器的磁芯由还用作霍尔传感器的集中器的磁区形成。在金属化层的后加工阶段制造磁性区域，其中形成磁通门传感器的激励线圈和感测线圈; 激励和感测线圈形成在容纳霍尔传感器的导电区域的半导体衬底上。

2. 发明授权

US08633688B2 Integrated magnetic sensor for detecting horizontal magnetic fields and manufacturing process thereof 有权
标题翻译：用于检测水平磁场的集成磁传感器及其制造工艺
公开(公告)号：US08633688B2
公开(公告)日：2014-01-21
申请号：US12957175
申请日：2010-11-30
申请人： Dario Paci , Paolo Iuliano , Caterina Riva , Marco Morelli
发明人： Dario Paci , Paolo Iuliano , Caterina Riva , Marco Morelli
IPC分类号： G01R33/02
CPC分类号： G01R33/04 , G01R33/0005 , G01R33/0047 , G01R33/0052 , G01R33/072
摘要： The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.
摘要翻译：用于检测外部磁场的集成磁传感器由具有表面的半导体材料体形成; 覆盖半导体材料体的绝缘层; 在身体内延伸的磁敏感区域，例如霍尔室; 以及在霍尔单元上延伸并且具有在绝缘层上平行于衬底的表面延伸的平面部分的铁磁材料的集中器。集中器终止于朝向霍尔单元的平面部分周向地突出并且横向于平面部分突出的尖端。当磁敏感区域是磁通门传感器的感测线圈时，它形成在衬底上，嵌入在绝缘层中，并且集中器的尖端可以达到传感线圈的距离。

3. 发明申请

US20130299930A1 INTEGRATED MAGNETORESISTIVE SENSOR, IN PARTICULAR THREE-AXIS MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：集成磁传感器，特别是三轴磁传感器及其制造方法
公开(公告)号：US20130299930A1
公开(公告)日：2013-11-14
申请号：US13996922
申请日：2011-12-23
申请人： Dario Paci , Marco Morelli , Caterina Riva
发明人： Dario Paci , Marco Morelli , Caterina Riva
IPC分类号： G01R33/00 , H01L43/12
CPC分类号： G01R33/0011 , B82Y25/00 , G01R33/093 , H01L43/12
摘要： An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
摘要翻译：在第一表面上由绝缘层覆盖半导体材料的衬底的集成磁阻器件。铁磁材料的磁阻在绝缘层中延伸并限定传感器的灵敏度平面。铁磁材料的集中器，包括至少一个臂，沿横向方向延伸到灵敏平面并垂直偏移到磁电阻。以这种方式，垂直于灵敏度平面指向的磁通线被集中和偏转，以便产生指向与灵敏平面平行的方向的磁场分量。

4. 发明授权

US09442168B2 Integrated magnetoresistive sensor, in particular three-axis magnetoresistive sensor and manufacturing method thereof 有权
标题翻译：集成磁阻传感器，特别是三轴磁阻传感器及其制造方法
公开(公告)号：US09442168B2
公开(公告)日：2016-09-13
申请号：US13996922
申请日：2011-12-23
申请人： Dario Paci , Marco Morelli , Caterina Riva
发明人： Dario Paci , Marco Morelli , Caterina Riva
IPC分类号： G01R33/02 , G01R33/00 , B82Y25/00 , G01R33/09 , H01L43/12
CPC分类号： G01R33/0011 , B82Y25/00 , G01R33/093 , H01L43/12
摘要： An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.
摘要翻译：在第一表面上由绝缘层覆盖半导体材料的衬底的集成磁阻器件。铁磁材料的磁阻在绝缘层中延伸并限定传感器的灵敏度平面。铁磁材料的集中器，包括至少一个臂，沿横向方向延伸到灵敏平面并垂直偏移到磁电阻。以这种方式，垂直于灵敏度平面指向的磁通线被集中和偏转，以便产生指向与灵敏平面平行的方向的磁场分量。

5. 发明授权

US08736262B2 Integrated magnetic sensor for detecting vertical magnetic fields and manufacturing process thereof 有权
标题翻译：用于检测垂直磁场的集成磁传感器及其制造工艺
公开(公告)号：US08736262B2
公开(公告)日：2014-05-27
申请号：US13021573
申请日：2011-02-04
申请人： Dario Paci , Caterina Riva , Marco Morelli
发明人： Dario Paci , Caterina Riva , Marco Morelli
IPC分类号： G01R33/07
CPC分类号： G01R33/07
摘要： An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.
摘要翻译：一种形成在包括半导体材料的基板的主体中的集成磁传感器，其集成了霍尔单元。在主体中形成沟槽，例如在基板的背面，并且由横向于主体的主面的方向延伸的侧面部分限定。所述沟槽在垂直于所述主面的方向上的深度大于在所述侧表面部分之间平行于所述主体的主面的方向上的宽度。由铁磁材料制成的集中器形成在沟槽内并且由两个铁磁区域构成，两个铁磁区域被设置成彼此间隔开一定距离并且沿沟槽的侧表面部分朝向第一霍尔室延伸。

6. 发明申请

US20110210722A1 INTEGRATED MAGNETIC SENSOR FOR DETECTING HORIZONTAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF 有权
标题翻译：用于检测水平磁场的集成磁传感器及其制造工艺
公开(公告)号：US20110210722A1
公开(公告)日：2011-09-01
申请号：US12957175
申请日：2010-11-30
申请人： Dario Paci , Paolo Iuliano , Caterina Riva , Marco Morelli
发明人： Dario Paci , Paolo Iuliano , Caterina Riva , Marco Morelli
IPC分类号： G01B7/30 , G01R33/02 , G01R33/06 , H01L21/00
CPC分类号： G01R33/04 , G01R33/0005 , G01R33/0047 , G01R33/0052 , G01R33/072
摘要： The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.
摘要翻译：用于检测外部磁场的集成磁传感器由具有表面的半导体材料体形成; 覆盖半导体材料体的绝缘层; 在身体内延伸的磁敏感区域，例如霍尔室; 以及在霍尔单元上延伸并且具有在绝缘层上平行于衬底的表面延伸的平面部分的铁磁材料的集中器。集中器终止于朝向霍尔单元的平面部分周向地突出并且横向于平面部分突出的尖端。当磁敏感区域是磁通门传感器的感测线圈时，它形成在衬底上，嵌入在绝缘层中，并且集中器的尖端可以达到传感线圈的距离。

7. 发明申请

US20110193556A1 INTEGRATED MAGNETIC SENSOR FOR DETECTING VERTICAL MAGNETIC FIELDS AND MANUFACTURING PROCESS THEREOF 有权
标题翻译：用于检测垂直磁场的集成磁传感器及其制造工艺
公开(公告)号：US20110193556A1
公开(公告)日：2011-08-11
申请号：US13021573
申请日：2011-02-04
申请人： Dario Paci , Caterina Riva , Marco Morelli
发明人： Dario Paci , Caterina Riva , Marco Morelli
IPC分类号： G01R33/06
CPC分类号： G01R33/07
摘要： An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.
摘要翻译：一种形成在包括半导体材料的基板的主体中的集成磁传感器，其集成了霍尔单元。在主体中形成沟槽，例如在基板的背面，并且由横向于主体的主面的方向延伸的侧面部分限定。所述沟槽在垂直于所述主面的方向上的深度大于在所述侧表面部分之间平行于所述主体的主面的方向上的宽度。由铁磁材料制成的集中器形成在沟槽内并且由两个铁磁区域构成，两个铁磁区域被设置成彼此间隔开一定距离并且沿沟槽的侧表面部分朝向第一霍尔室延伸。

8. 发明申请

US20080208425A1 INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权
标题翻译：具有双重测量尺寸和高全尺寸值的集成压力传感器
公开(公告)号：US20080208425A1
公开(公告)日：2008-08-28
申请号：US12018068
申请日：2008-01-22
申请人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
发明人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
IPC分类号： G06F19/00 , G01L9/02
CPC分类号： G01L9/0054 , G01L9/0045 , G01L15/00
摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.
摘要翻译：在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。高压检测元件对第二压力值敏感。

9. 发明授权

US6037826A Control of saturation of integrated bipolar transistors 失效
标题翻译：集成双极晶体管的饱和度控制
公开(公告)号：US6037826A
公开(公告)日：2000-03-14
申请号：US99243
申请日：1993-07-28
申请人： Vanni Poletto , Marco Morelli
发明人： Vanni Poletto , Marco Morelli
IPC分类号： H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , H03K17/08
CPC分类号： G05F1/569 , H03K17/0422
摘要： Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
摘要翻译：双极功率晶体管的饱和度通过感测由饱和晶体管最终注入到集成电路的衬底中的电流来控制，并且使用该信号对通过功率晶体管的基极驱动的电流施加限制作用专用驱动电路。与现有技术的抗饱和系统不同，不再需要精确地监视双极功率晶体管的端子两端的工作电压。合适的感测电阻可以方便地集成在与双极晶体管的经常复杂的集成结构相距一定距离处。本发明的系统提供了许多优点，并且仅在功率晶体管正确地达到饱和状态，但在任何不期望的后果之前才能确保抗饱和电路的干预。

10. 发明授权

US5818274A Flip-flop circuit 失效
标题翻译：触发电路
公开(公告)号：US5818274A
公开(公告)日：1998-10-06
申请号：US740345
申请日：1996-11-07
申请人： Giampaolo Lombreschi , Maurizio Gallinari , Marco Morelli
发明人： Giampaolo Lombreschi , Maurizio Gallinari , Marco Morelli
IPC分类号： H03K3/037
CPC分类号： H03K3/037
摘要： A flip-flop circuit able to commute in correspondence with any logic transition of the input signal using a flip-flop and a logic gate of the EXNOR type receiving at its input a signal and the inverted output of the flip-flop. To the output of the EXNOR gate is connected a set-reset flip-flop which allows a reset to be effected after each commutation of the circuit in order to prepare it for the next transition.
摘要翻译：触发器电路能够使用触发器和EXNOR类型的逻辑门与输入信号的任何逻辑转换相对应地通勤，在其输入端接收信号和触发器的反相输出。在EXNOR门的输出端连接一个置位复位触发器，该触发器允许在每次电路换向之后进行复位，以便为下一个转换做好准备。

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