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1. 发明申请

US20100134101A1 BROAD-RANGE MAGNETIC SENSOR AND MANUFACTURING PROCESS THEREOF 审中-公开
标题翻译：广域范围磁传感器及其制造工艺
公开(公告)号：US20100134101A1
公开(公告)日：2010-06-03
申请号：US12628448
申请日：2009-12-01
申请人： CATERINA RIVA , Marco Morelli , Marco Marchesi
发明人： CATERINA RIVA , Marco Morelli , Marco Marchesi
IPC分类号： G01R33/06
CPC分类号： G01R33/05 , G01R33/07
摘要： A magnetic sensor is formed by a fluxgate sensor and by at least one Hall sensor integrated in a same integrated device, wherein the magnetic core of the fluxgate sensor is formed by a magnetic region that operates also as a concentrator for the Hall sensor. The magnetic region is manufactured in a post-machining stage on the metallization layers wherein the energizing coil and sensing coil of the fluxgate sensor are formed; the energizing and sensing coils are formed on a semiconductor substrate housing the conductive regions of the Hall sensor.
摘要翻译：磁传感器由磁通门传感器和集成在同一集成器件中的至少一个霍尔传感器形成，其中磁通门传感器的磁芯由还用作霍尔传感器的集中器的磁区形成。在金属化层的后加工阶段制造磁性区域，其中形成磁通门传感器的激励线圈和感测线圈; 激励和感测线圈形成在容纳霍尔传感器的导电区域的半导体衬底上。

2. 发明授权

US5510947A Electrostatic discharge protective device having a reduced current leakage 失效
标题翻译：具有减少的电流泄漏的静电放电保护装置
公开(公告)号：US5510947A
公开(公告)日：1996-04-23
申请号：US367747
申请日：1995-01-03
申请人： Franco Pellegrini , Marco Morelli , Athos Canclini
发明人： Franco Pellegrini , Marco Morelli , Athos Canclini
IPC分类号： H01L27/04 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/78 , H03K17/08 , H03K19/003 , H02H9/04
CPC分类号： H01L27/0248
摘要： In an anti-ESD protective structure, especially designed for pins destined to reach below ground and/or above supply voltages, includes a pair of Zener diodes or lateral NPN structures with a resistive connection between base and emitter, connected in opposition among each other between the pin to be protected and a grounded substrate of the integrated circuit. An amplifying effect on the leakage current which is drawn/injected through the pin by the protective structure caused by the triggering of an intrinsic parasitic transistor is effectively eliminated by connecting a biasing element, such as a forward biased junction, between the node of interconnection between the two Zener orlateral NPN structures and a node of the integrated circuit biased with a voltage sufficiently high as to ensure, under any condition, a reverse biasing of the base-emitter junction of the parasitic transistor.
摘要翻译：在防静电保护结构中，特别针对目的地达到低于地和/或高于电源电压的引脚设计，包括一对齐纳二极管或侧向NPN结构，其具有基极和发射极之间的电阻连接，待保护的引脚和集成电路的接地基板。通过在内部寄生晶体管的触发引起的保护结构通过引脚引出/注入的漏电流的放大效应通过在诸如正向偏置结之间的偏置元件之间连接在第两个齐纳边的NPN结构和集成电路的一个节点，其偏压电压足够高，以确保在任何条件下寄生晶体管的基极 - 发射极的反偏置。

3. 发明授权

US5258723A Integrated instrumentation amplifier with integrated frequency-compensating capacitance 失效
标题翻译：具有集成频率补偿电容的集成仪表放大器
公开(公告)号：US5258723A
公开(公告)日：1993-11-02
申请号：US919991
申请日：1992-07-27
申请人： Michelangelo Mazzucco , Vanni Poletto , Marco Morelli
发明人： Michelangelo Mazzucco , Vanni Poletto , Marco Morelli
IPC分类号： G01N27/409 , H03F1/08 , H03F3/34 , H03F3/347 , H03F3/45
CPC分类号： H03F1/083 , H03F3/45479 , H03F2200/261
摘要： An amplifier including first and second input transistors which are connected to respective first and second feedback amplification circuits associated with respective frequency-compensating capacitances. The second feedback amplification circuit has a two-stage structure and includes an internal compensating capacitance. The three frequency-compensating capacitances can have low values and can thus conveniently be integrated in the same chip as the amplifier. The amplifier can be used, in particular, as an interface between a zirconium-dioxide oxygen sensor and an electronic control unit which have different earth conductors.

4. 发明授权

US5036269A Voltage stabilizer with a very low voltage drop designed to withstand high voltage transients 失效
标题翻译：电压稳定器具有非常低的电压降，可承受高电压瞬变
公开(公告)号：US5036269A
公开(公告)日：1991-07-30
申请号：US458373
申请日：1989-12-28
申请人： Bruno Murari , Marco Morelli , Giampietro Maggioni
发明人： Bruno Murari , Marco Morelli , Giampietro Maggioni
IPC分类号： G05F1/56 , G05F1/571
CPC分类号： G05F1/571
摘要： A voltage stabilizer with a very low voltage drop includes a series voltage regulator circuit having a first PNP transistor connected to an input terminal of the stabilizer via a second PNP transistor and being connected to ground via a capacitor. The stabilizer has biasing and switching circuits disposed between the input terminal thereof, a base terminal of the second transistor and ground.

5. 发明授权

US4801860A Voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients 失效
标题翻译：具有设计用于承受高电压瞬变的最小电压降的稳压器
公开(公告)号：US4801860A
公开(公告)日：1989-01-31
申请号：US159290
申请日：1988-02-23
申请人： Bruno Murari , Marco Morelli
发明人： Bruno Murari , Marco Morelli
IPC分类号： G05F1/56 , G05F1/571
CPC分类号： G05F1/571 , G05F1/56
摘要： A voltage stabilizer with a minimal voltage drop designed to withstand high voltage transients includes a "series" type voltage regulator circuit with an NPN power transistor. The collector terminal of this transistor is connected to ground via a capacitor and to the cathode of a diode whose anode forms an input terminal of the stabilizer. The base terminal of the power transistor is connected to the collector terminals of first and second PNP transistors which have their emitter terminals respectively connected to the cathode and anode of the diode and their base terminals connected to a circuit biasing circuit.

6. 发明授权

US4786827A Antisaturation circuit for integrated PNP transistor with intervention characteristic definable according to a preset function 失效
标题翻译：集成PNP晶体管的抗饱和电路，具有根据预设功能可定义的干预特性
公开(公告)号：US4786827A
公开(公告)日：1988-11-22
申请号：US879160
申请日：1986-06-26
申请人： Roberto Gariboldi , Marco Morelli
发明人： Roberto Gariboldi , Marco Morelli
IPC分类号： H01L27/082 , G05F1/56 , G05F1/569 , H01L21/8222 , H03K17/0422 , H03K3/33 , G05F1/40 , H03K3/01
CPC分类号： H03K17/0422 , G05F1/569
摘要： Described is an antisaturation circuit for an integrated PNP transistor characterized by a comparator circuit comprising two transistors and a current generator whose output current corresponds to a pre-established function, e.g., an exponential function, of the emitter current of said transistor. The changing of state of the comparator circuit, as determined by said pre-established function of said current generator, is determined by the drop of the V.sub.CE voltage of the transistor below a preset minimum value, with a portion of the conduction current of one of the two transistors of the comparator circuit utilized for increasing the forced .beta. of the transistor. This limits the degree of its saturation, as well as the leakage current toward the substrate.
摘要翻译：描述了用于集成PNP晶体管的抗饱和电路，其特征在于包括两个晶体管的比较器电路和电流发生器，其输出电流对应于所述晶体管的发射极电流的预先建立的功能，例如指数函数。由所述电流发生器的所述预先建立的功能确定的比较器电路的状态的改变由晶体管的VCE电压降到预定的最小值以下，其中导电电流的一部分为比较器电路的两个晶体管用于增加晶体管的强制β。这限制了其饱和度以及朝向衬底的漏电流。

7. 发明申请

US20080208425A1 INTEGRATED PRESSURE SENSOR WITH DOUBLE MEASURING SCALE AND A HIGH FULL-SCALE VALUE 有权
标题翻译：具有双重测量尺寸和高全尺寸值的集成压力传感器
公开(公告)号：US20080208425A1
公开(公告)日：2008-08-28
申请号：US12018068
申请日：2008-01-22
申请人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
发明人： Giulio Riccoti , Marco Morelli , Luigi Della Torre , Andrea Lorenzo Vitali , Ubaldo Mastromatteo
IPC分类号： G06F19/00 , G01L9/02
CPC分类号： G01L9/0054 , G01L9/0045 , G01L15/00
摘要： In a pressure sensor with double measuring scale: a monolithic body of semiconductor material has a first main surface, a bulk region and a sensitive portion upon which pressure acts; a cavity is formed in the monolithic body and is separated from the first main surface by a membrane, which is flexible and deformable as a function of the pressure, and is arranged inside the sensitive portion and is surrounded by the bulk region; a low-pressure detecting element of the piezoresistive type, sensitive to first values of pressure, is integrated in the membrane and has a variable resistance as a function of the deformation of the membrane; in addition, a high-pressure detecting element, also of a piezoresistive type, is formed in the bulk region inside the sensitive portion and has a variable resistance as a function of the pressure. The high-pressure detecting element is sensitive to second values of pressure.
摘要翻译：在具有双重测量尺的压力传感器中：半导体材料的整体主体具有第一主表面，主体区域和压力作用在其上的敏感部分; 在整体式主体中形成空腔，并通过作为压力的函数而变形的柔性且可变形的膜与第一主表面分离，并且布置在敏感部分的内部并被体区域包围; 对第一压力值敏感的压阻型低压检测元件集成在膜中，并具有作为膜的变形的函数的可变电阻; 此外，在敏感部分内部的本体区域中形成压阻型高压检测元件，并且具有作为压力的函数的可变电阻。高压检测元件对第二压力值敏感。

8. 发明授权

US6037826A Control of saturation of integrated bipolar transistors 失效
标题翻译：集成双极晶体管的饱和度控制
公开(公告)号：US6037826A
公开(公告)日：2000-03-14
申请号：US99243
申请日：1993-07-28
申请人： Vanni Poletto , Marco Morelli
发明人： Vanni Poletto , Marco Morelli
IPC分类号： H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , H03K17/08
CPC分类号： G05F1/569 , H03K17/0422
摘要： Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Unlike the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
摘要翻译：双极功率晶体管的饱和度通过感测由饱和晶体管最终注入到集成电路的衬底中的电流来控制，并且使用该信号对通过功率晶体管的基极驱动的电流施加限制作用专用驱动电路。与现有技术的抗饱和系统不同，不再需要精确地监视双极功率晶体管的端子两端的工作电压。合适的感测电阻可以方便地集成在与双极晶体管的经常复杂的集成结构相距一定距离处。本发明的系统提供了许多优点，并且仅在功率晶体管正确地达到饱和状态，但在任何不期望的后果之前才能确保抗饱和电路的干预。

9. 发明授权

US5818274A Flip-flop circuit 失效
标题翻译：触发电路
公开(公告)号：US5818274A
公开(公告)日：1998-10-06
申请号：US740345
申请日：1996-11-07
申请人： Giampaolo Lombreschi , Maurizio Gallinari , Marco Morelli
发明人： Giampaolo Lombreschi , Maurizio Gallinari , Marco Morelli
IPC分类号： H03K3/037
CPC分类号： H03K3/037
摘要： A flip-flop circuit able to commute in correspondence with any logic transition of the input signal using a flip-flop and a logic gate of the EXNOR type receiving at its input a signal and the inverted output of the flip-flop. To the output of the EXNOR gate is connected a set-reset flip-flop which allows a reset to be effected after each commutation of the circuit in order to prepare it for the next transition.
摘要翻译：触发器电路能够使用触发器和EXNOR类型的逻辑门与输入信号的任何逻辑转换相对应地通勤，在其输入端接收信号和触发器的反相输出。在EXNOR门的输出端连接一个置位复位触发器，该触发器允许在每次电路换向之后进行复位，以便为下一个转换做好准备。

10. 发明授权

US5229907A Device for protection against overvoltages of integrated electronic circuits, particularly for applications in the motor car field 失效
标题翻译：综合电子电路过电压保护装置，特别适用于电动汽车领域
公开(公告)号：US5229907A
公开(公告)日：1993-07-20
申请号：US536886
申请日：1990-06-13
申请人： Marco Morelli , Fabio Marchio , Bruno Cavalli
发明人： Marco Morelli , Fabio Marchio , Bruno Cavalli
IPC分类号： H01L27/04 , G05F1/10 , H01L21/822 , H01L27/06 , H02H3/20 , H02H9/04
CPC分类号： H02H9/046 , H02H9/041
摘要： The device for protection comprises a zener diode voltage limiter having a breakdown voltage pre-set at a value (say, 30 volts) lower than the maximum value sustainable by the protected circuit in the closed condition and a quenching circuit having a pre-set lag controlled by each overvoltage impulse and suitable for disactivating said voltage limiter and to control the opening of said protected circuit with a time lag pre-set with respect to the start of each overvoltage impulse. In succession to said voltage limiter there is introduced in addition a zener diode with a higher breakdown voltage, say, equal to 110 volts, which allows the limitation to such a value of any overvoltages having a very low energy content superimposed over overvoltages having limited amplitude and long duration.

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