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    • 1. 发明申请
    • ILLUMINATION OPTICAL SYSTEM FOR MICROLITHOGRAPHY AND PROJECTION EXPOSURE SYSTEM WITH AN ILLUMINATION OPTICAL SYSTEM OF THIS TYPE
    • 具有这种类型的照明光学系统的微结构和投影曝光系统的照明光学系统
    • WO2011157601A2
    • 2011-12-22
    • PCT/EP2011/059427
    • 2011-06-08
    • CARL ZEISS SMT GMBHPATRA, MichaelDEGÜNTHER, MarkusLAYH, Michael
    • PATRA, MichaelDEGÜNTHER, MarkusLAYH, Michael
    • G03F7/20
    • G03F7/70091G03F7/70075G03F7/70083G03F7/70116
    • An illumination optical system (7) for microlithography is used to guide illumination light (8) from a primary light source (6) to an object field (3). A mirror array (10) of the illumination optical system (7) has a plurality of individual mirrors (11), which can be tilted independently of one another by actuators and are connected to associated tilting actuators (12).A controller (14) is used to activate the actuators (12).A raster module (19) of the illumination optical system (7) has a plurality of raster elements (28, 30) to produce a spatially distributed arrangement of secondary light sources. The raster module (19) is arranged in the region of a plane (20) of the illumination optical system (7), in which an emergent angle (AR x ), at which an illumination light part bundle (15) leaves one of the raster elements (30), is precisely allocated to a location region in the object field (3), on which the illumination light part bundle (15) impinges on the object field (3).The controller (14) is configured in such a way that a specification of a tilting angle for each individual mirror (11) is allocated to a predetermined desired course of illumination angle intensity distributions, with which object field points distributed over the object field (3) are impinged upon. The raster module (19), depending on the respective actual angle of incidence, produces another intensity course in the object field (3). The result is an illumination optical system, in which an illumination intensity over the object field can be influenced in a targeted manner with respect to the total illumination intensity and/or with respect to the intensity contributions from different illumination directions.
    • 用于微光刻的照明光学系统(7)用于将照明光(8)从初级光源(6)引导到物场(3)。 照明光学系统(7)的反射镜阵列(10)具有多个独立的反射镜(11),可以通过致动器彼此独立地倾斜,并且连接到相关联的倾斜致动器(12)。 用于激活致动器(12)。照明光学系统(7)的光栅模块(19)具有多个光栅元件(28,30),以产生二次光源的空间分布布置。 光栅模块(19)布置在照明光学系统(7)的平面(20)的区域中,其中照射光束(15)离开光栅之一 元件(30)被精确地分配给对象场(3)中的照明光束(15)照射在物场(3)上的位置区域。控制器(14)以这种方式配置 将每个单独的反射镜(11)的倾斜角度的规格分配给预定的所需的照明角度强度分布过程,通过该预定路线分布在物场(3)上的物体场点被撞击。 光栅模块(19)根据相应的实际入射角度在物场(3)中产生另一强度光程。 结果是照明光学系统,其中相对于总照明强度和/或相对于来自不同照明方向的强度贡献,可以以目标方式影响物体场上的照明强度。
    • 2. 发明申请
    • MASK AND SCANNING PROJECTION EXPOSURE METHOD FOR MICROLITHOGRAPHY
    • 掩模和扫描投影曝光方法
    • WO2013097897A1
    • 2013-07-04
    • PCT/EP2011/074186
    • 2011-12-28
    • CARL ZEISS SMT GMBHPATRA, MichaelDEGÜNTHER, Markus
    • PATRA, MichaelDEGÜNTHER, Markus
    • G03F7/20
    • G03F1/38G03F1/42G03F1/68G03F7/70058G03F7/70475
    • A mask for microlithography comprises a substrate (SUB); a first pattern area (PA1) on the substrate, the first pattern area comprising a first pattern (PAT1) extending over a first length (L1) in a mask scanning direction and a first width (W1) in a direction perpendicular to the mask scan direction; and a second pattern area (PA2) on the substrate adjacent to the first pattern area in the mask scanning direction, the second pattern area comprising a second pattern (PAT2) extending over a second length (L2) in the mask scanning direction and a second width (W2) identical to the first width in the direction perpendicular to the mask scan direction. The second length (L2) is smaller than the first length (L1) and the second pattern is identical to a corresponding portion of the first pattern, where the corresponding portion is offset relative to the second pattern by the first length (L1) in the mask scan direction and has a length (CPL) identical to the second length (L2). Scanning exposure methods with increased throughput are possible when this type of mask is used.
    • 用于微光刻的掩模包括基底(SUB); 在基板上的第一图案区域(PA1),第一图案区域包括在掩模扫描方向上在第一长度(L1)上延伸的第一图案(PAT1)和在垂直于掩模扫描的方向上的第一宽度(W1) 方向; 和与掩模扫描方向上与第一图形区域相邻的第二图案区域(PA2),第二图案区域包括在掩模扫描方向上在第二长度(L2)上延伸的第二图案(PAT2),第二图案区域 宽度(W2)与垂直于掩模扫描方向的方向上的第一宽度相同。 第二长度(L2)小于第一长度(L1),第二图案与第一图案的对应部分相同,其中对应部分相对于第二图案偏移第一长度(L1) 掩模扫描方向并具有与第二长度(L2)相同的长度(CPL)。 当使用这种类型的掩模时,可以提高吞吐量的扫描曝光方法。
    • 3. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2012116710A1
    • 2012-09-07
    • PCT/EP2011/000960
    • 2011-02-28
    • CARL ZEISS SMT GMBHPATRA, MichaelDEGÜNTHER, Markus
    • PATRA, MichaelDEGÜNTHER, Markus
    • G03F7/20
    • G03F7/70058G03F7/70158
    • An illumination system of a microlithographic projection exposure apparatus (10) comprises a light source (30) which is configured to produce projection light (PL), a pupil plane (84) and a diffractive optical element (48) that is arranged between the light source (30) and the pupil plane (84) such that an irradiance distribution of projection light (PL) in the pupil plane (84) depends on the position of a field (96a, 96b, 96c) that is illuminated by the projection light (PL) on the diffractive optical element (48). The illumination system further comprises an optical imaging system (34; 134; 234; 334) that is arranged between the light source (30) and the diffractive optical element (48). The optical imaging system ensures that changes of the direction and divergence of the projection light (PL) emitted by the light source (30) have no substantial effect on the position and size of the field which is illuminated on the diffractive optical element (48) by the projection light (PL).
    • 微光刻投影曝光装置(10)的照明系统包括被配置为产生投影光(PL)的光源(30),配置在光的光瞳平面(84)和衍射光学元件(48)之间, 源极(30)和光瞳面(84),使得投影光(PL)在光瞳平面(84)中的辐照度分布取决于由投影光照射的场(96a,96b,96c)的位置 (PL)在衍射光学元件(48)上。 照明系统还包括布置在光源(30)和衍射光学元件(48)之间的光学成像系统(34; 134; 234; 334)。 光学成像系统确保由光源(30)发射的投射光(PL)的方向和发散的变化对于在衍射光学元件(48)上照射的场的位置和尺寸没有实质影响, 通过投影光(PL)。
    • 4. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2012089224A1
    • 2012-07-05
    • PCT/EP2010/007953
    • 2010-12-28
    • CARL ZEISS SMT GMBHPATRA, MichaelBIELING, StigDEGÜNTHER, MarkusSCHLESENER, FrankSCHWAB, Markus
    • PATRA, MichaelBIELING, StigDEGÜNTHER, MarkusSCHLESENER, FrankSCHWAB, Markus
    • G03F7/20
    • G03F7/70158G03F7/70058
    • An illumination system of a microlithographic projection exposure apparatus (10) comprises a light source (30), which is configured to produce a projection light beam (34), and a first and a second diffractive optical element (42, 44; 242, 244) arranged between the light source (30) and a pupil plane (84). The diffractive effect produced by each diffractive optical element depends on the position of a light field (110) that is irradiated by the projection light beam (34) on the diffractive optical elements (42, 44; 242, 244). A displacement mechanism (54, 64) changes the mutual spatial arrangement of the diffractive optical elements. In at least one of the mutual spatial arrangements, which can be obtained with the help of the displacement mechanism (54, 64), the light field (110) extends both over the first and the second diffractive optical element (42, 44; 242, 244). This makes it possible to produce in a simple manner continuously variable illumination settings.
    • 微光刻投影曝光装置(10)的照明系统包括被配置为产生投影光束(34)的光源(30)和第一和第二衍射光学元件(42,44; 242,244) )布置在光源(30)和光瞳平面(84)之间。 由每个衍射光学元件产生的衍射效应取决于由投影光束(34)照射在衍射光学元件(42,44; 242,244)上的光场(110)的位置。 位移机构(54,64)改变衍射光学元件的相互空间布置。 在借助位移机构(54,64)可获得的相互空间布置中的至少一个中,光场(110)在第一和第二衍射光学元件(42,44; 242)之上延伸 ,244)。 这使得可以以简单的方式生产连续可变的照明设置。
    • 5. 发明申请
    • MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置
    • WO2009080279A1
    • 2009-07-02
    • PCT/EP2008/010801
    • 2008-12-18
    • CARL ZEISS SMT AGLAYH, MichaelDEGÜNTHER, MarkusPATRA, MichaelWANGLER, JohannesMAUL, ManfredFIOLKA, DamianWEISS, Gundula
    • LAYH, MichaelDEGÜNTHER, MarkusPATRA, MichaelWANGLER, JohannesMAUL, ManfredFIOLKA, DamianWEISS, Gundula
    • G03F7/20
    • G03F7/702G02B5/09G02B26/105G03F7/70116G03F7/7055G03F7/70583
    • A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, wherein sin(γ) is a greatest marginal angle value of the exit pupil, and wherein the illumination optics comprise a multi-mirror array (38) comprising a plurality of mirrors (38s) for adjusting an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system (33a; 33b,; 33c; 3d; 400; 822; 903; 1010; 1103; 1203) for temporally stabilising the illumination of the multi-mirror array (38) so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.
    • 用于微光刻的投影曝光装置包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点,照明光学器件具有与对象点相关联的出射光瞳,其中sin(θ)是出射光瞳的最大边缘角度值,并且其中照明光学器件包括多镜 阵列(38)包括用于调整与对象场点相关联的出射光瞳中的强度分布的多个反射镜(38s)。 照明光学器件进一步包含至少一个光学系统(33a; 33b;; 33c; 3d; 400; 822; 903; 1010; 1103; 1203),用于暂时稳定多镜阵列(38)的照明, 在每个对象场点处,相关联的出射光瞳中的强度分布在相关出射光瞳中偏离期望的强度分布,在重心角度值sin(ß)小于2%的情况下,以最大边角值表示 相关联的出射光瞳的sin(θ)和/或在椭圆率小于2%的情况下,和/或在极平衡小于2%的情况下。
    • 9. 发明申请
    • OPTICAL SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION APPARATUS
    • 用于微晶投影装置的光学系统
    • WO2011147658A1
    • 2011-12-01
    • PCT/EP2011/056830
    • 2011-04-29
    • CARL ZEISS SMT GMBHSÄNGER, IngoSCHARNWEBER, RalfDITTMANN, OlafGRUNER, ToralfWEIß, GundulaMAJOR, András G.VOGT, MartinDEGÜNTHER, MarkusWANGLER, JohannesKORB, ThomasWALDIS, Severin
    • SÄNGER, IngoSCHARNWEBER, RalfDITTMANN, OlafGRUNER, ToralfWEIß, GundulaMAJOR, András G.VOGT, MartinDEGÜNTHER, MarkusWANGLER, JohannesKORB, ThomasWALDIS, Severin
    • G03F7/20
    • G03F7/70116G03F7/70566
    • The invention concerns an optical system for a microlithographic projection exposure apparatus and a microlithographic exposure method. In an embodiment an optical system for a microlithographic projection exposure apparatus includes at least one mirror arrangement (200, 720, 730, 920) having a plurality of mirror elements (200a, 200b, 200c, 721, 722, 733, 731, 732, 733,...) which are displaceable independently of each other for altering an angular distribution of the light reflected by the mirror arrangement (200, 720, 730, 920), and at least one manipulator (300, 720, 910) which is arranged downstream of said mirror arrangement (200, 720, 730, 920) in the light propagation direction and has a raster arrangement of manipulator elements (301, 302,..., 600, 721, 722, 723,... ) in such a way that light incident on the manipulator (300, 600, 720, 910) in operation of the optical system is influenced differently in its polarisation state and/or in its intensity in dependence on the incidence location, wherein at least two mutually different illumination settings (420, 520) are adjustable by the variation in an angular distribution of the light reflected by the mirror arrangement (200), wherein said illumination settings (420, 520) differ from each other in that identical regions of a pupil plane of the illumination system (10) are illuminated with light of a different polarisation state.
    • 本发明涉及一种用于微光刻投影曝光装置和微光刻曝光方法的光学系统。 在一个实施例中,用于微光刻投影曝光装置的光学系统包括具有多个反射镜元件(200a,200b,200c,721,722,733,731,732,920)的至少一个反射镜装置(200,720,730,920) 733,...),其可彼此独立地移位,以改变由反射镜装置(200,720,730,920)反射的光的角分布,以及至少一个操纵器(300,720,910),其是 在光传播方向上布置在所述反射镜装置(200,720,730,920)的下游,并且具有光栅装置,其中所述操纵元件(301,302,...,600,721,722,723,...) 入射在光学系统操作的操纵器(300,600,720,910)上的光的偏振状态和/或其强度根据入射位置受到不同的影响,其中至少两个相互不同 照明设置(420,520)可通过角度dist的变化进行调节 由反射镜装置(200)反射的光的贡献,其中所述照明设置(420,520)彼此不同,因为照明系统(10)的光瞳平面的相同区域被不同偏振态的光照射 。