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    • 2. 发明申请
    • SURFACE CORRECTION OF MIRRORS WITH DECOUPLING COATING
    • 倒装涂层反光镜的表面校正
    • WO2014206736A1
    • 2014-12-31
    • PCT/EP2014/062132
    • 2014-06-11
    • CARL ZEISS SMT GMBH
    • DIER, OliverHACKL, TobiasSTICKEL, Franz-JosefLÖRING, UlrichAßMUS, TilmannMÜLLER, JürgenKAMENOV, VladimirRENNON, Siegfried
    • G02B5/08G21K1/06
    • G03F7/702G02B5/0816G02B5/0891G02B27/0025G03F7/70308G03F7/70316G03F7/706G03F7/70975G21K1/062H05G2/005
    • The invention relates to a mirror (1) for EUV lithography, comprising a substrate (2) and a reflective coating (3, 4), wherein the reflective coating comprises a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group (3) and second group (4) of layers (3a, 3b; 4a, 4b) are designed in each case for reflecting radiation having a used wavelength in the range of between 5 nm and 30 nm, wherein the first group (3) of layers (3a, 3b) is arranged between the substrate (2) and the second group (4) of layers (4a, 4b), and wherein a decoupling coating (6) is arranged between the first group (3) and second group (4) of layers (3a, 3b, 4a, 4b), said decoupling coating being designed for optically decoupling the second group (4) of layers (4a, 4b) from the first group (3) of layers (3a, 3b) by preventing the radiation having the used wavelength from reaching the first group (3) of layers (3a, 3b). The reflective coating (3, 4) preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror (1). The invention also relates to a projection optical unit and an optical system for EUV lithography comprising at least one such mirror, a method for correcting the surface form of such a mirror, and methods for correcting the imaging properties of such a projection optical unit.
    • 本发明涉及一种用于EUV光刻的反射镜(1),其包括基底(2)和反射涂层(3,4),其中所述反射涂层包括第一组(3)层(3a,3b) 组(4)层(4a,4b),其中在每种情况下设计层(3a,3b; 4a,4b)的第一组(3)和第二组(4),用于将具有使用波长的辐射反射在 范围在5nm和30nm之间,其中层(3a,3b)的第一组(3)布置在基板(2)和层(4a,4b)的第二组(4)之间,并且其中去耦 涂层(6)布置在层(3a,3b,4a,4b)的第一组(3)和第二组(4)之间,所述去耦涂层被设计用于光学地将第二组(4)的层(4a, 4b)从层(3a,3b)的第一组(3)通过防止具有使用波长的辐射到达层(3a,3b)的第一组(3)。 反射涂层(3,4)优选具有用于校正反射镜(1)的表面形状的层厚度变化的校正层(5)。 本发明还涉及用于EUV光刻的投影光学单元和光学系统,其包括至少一个这种反射镜,用于校正这种反射镜的表面形状的方法以及用于校正这种投影光学单元的成像特性的方法。
    • 3. 发明公开
    • OPTICAL SYSTEM
    • 光学系统
    • EP2580626A1
    • 2013-04-17
    • EP11726128.9
    • 2011-06-14
    • Carl Zeiss SMT GmbH
    • EHM, Dirk HeinrichWEISS, MarkusZACZEK, ChristophHACKL, TobiasSEITZ, Wolfgang
    • G03F7/20
    • G21K5/04G03F7/70233G03F7/70916
    • To prevent reflective optical elements (2) for EUV lithography from getting electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, comprising a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles can be applied to the reflective optical element (2), wherein the source (3) is a flood gun applying electrons to the reflective optical element (2) as only means for charge carrier compensation.
    • 为了防止用于EUV光刻的反射光学元件(2)在被EUV辐射(4)照射时被带电,提出了一种用于EUV光刻的光学系统,其包括反射光学元件(2),其包括衬底(21) 具有当用EUV辐射(4)照射时发射二次电子的高反射涂层(22)和带电粒子的源(3),其以这样的方式排列,使得可以将带电粒子施加到反射光学元件 (2),其中所述源(3)是作为用于电荷载流子补偿的唯一装置将电子施加到所述反射光学元件(2)的泛光枪。