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1. 发明申请

WO2011161243A1 METHOD AND APPARATUS FOR ANALYZING AND / OR REPAIRING OF AN EUV MASK DEFECT 审中-公开
标题翻译：用于分析和/或修复EUV掩蔽缺陷的方法和装置
公开(公告)号：WO2011161243A1
公开(公告)日：2011-12-29
申请号：PCT/EP2011/060626
申请日：2011-06-24
申请人： CARL ZEISS SMS GMBH , CARL ZEISS SMT GMBH , BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten , FELDMANN, Heiko , RUOFF, Johannes
发明人： BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten , FELDMANN, Heiko , RUOFF, Johannes
IPC分类号： G03F1/14 , G03F1/00 , G03F7/20
CPC分类号： G01N21/95 , B82Y10/00 , B82Y40/00 , C23C14/48 , G03B27/68 , G03F1/24 , G03F1/72 , G03F1/74 , G03F1/84 , G03F7/705 , G03F7/7065 , G06F17/5009 , G06T7/0002 , G21K5/00
摘要： The invention relates to a method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask) comprising the steps of: (a) generating at least one focus stack relating to the defect using an EUV mask inspection tool, (b) determining a surface configuration of the EUV mask at a position of the defect, (c) providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks, and (d) determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.
摘要翻译：本发明涉及一种用于分析用于极紫外（EUV）波长范围（EUV掩模）的光刻掩模的缺陷的方法，包括以下步骤：（a）使用EUV掩模检查产生与缺陷有关的至少一个焦点叠层工具，（b）在缺陷的位置确定EUV掩模的表面结构，（c）提供具有确定的表面配置的模型结构，其具有不同的相位误差并产生相应的焦点堆叠，以及（d）确定三维通过比较所述缺陷的至少一个生成的焦点堆栈和所产生的模型结构的焦点堆栈，来确定EUV掩模缺陷的三维误差结构。

2. 发明申请

WO2013010976A2 METHOD AND APPARATUS FOR ANALYZING AND FOR REMOVING A DEFECT OF AN EUV PHOTOMASK 审中-公开
标题翻译：用于分析和去除EUV光刻胶缺陷的方法和装置
公开(公告)号：WO2013010976A2
公开(公告)日：2013-01-24
申请号：PCT/EP2012/063881
申请日：2012-07-16
申请人： CARL ZEISS SMS GMBH , BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten
发明人： BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFMANN, Thorsten
IPC分类号： G03F1/22 , G03F1/84 , G03F1/86
CPC分类号： G01Q30/02 , B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/84 , G03F1/86
摘要： The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.
摘要翻译：本发明涉及用于分析包括至少一个基底和至少一个多层结构的用于极紫外波长范围的光学元件的缺陷的方法，所述方法包括以下步骤：（a）通过曝光来确定第一数据（b）通过用扫描探针显微镜扫描缺陷来确定第二数据，（c）通过用扫描粒子显微镜扫描缺陷来确定第三数据，以及（d）将第一，第二和第三个数据。

3. 发明申请

WO2012163518A1 APPARATUS AND METHOD FOR INVESTIGATING AN OBJECT 审中-公开
标题翻译：用于调查对象的装置和方法
公开(公告)号：WO2012163518A1
公开(公告)日：2012-12-06
申请号：PCT/EP2012/002276
申请日：2012-05-25
申请人： CARL ZEISS SMS GMBH , BAUR, Christof , EDINGER, Klaus , HOFMANN, Thorsten , BARALIA, Gabriel , BUDACH, Michael
发明人： BAUR, Christof , EDINGER, Klaus , HOFMANN, Thorsten , BARALIA, Gabriel , BUDACH, Michael
IPC分类号： H01J37/28 , H01J37/244 , H01J37/304 , G01Q10/00
CPC分类号： G01B15/00 , B82Y35/00 , G01Q30/02 , G06K7/0004 , H01J37/244 , H01J37/28 , H01J37/3045 , H01J2237/2817 , H01J2237/2818 , H01J2237/2826 , H01J2237/30444
摘要： The present invention refers to an apparatus and a method for investigating an object with a scanning particle microscope (120) and at least one scanning probe microscope (140) with a probe, wherein the scanning particle microscope (120) and the at least one scanning probe microscope (140) are spaced with respect to each other in a common vacuum chamber (102) so that a distance between the optical axis of the scanning particle microscope (120) and the measuring point (195) of the scanning probe microscope (140) in the direction perpendicular to the optical axis of the scanning particle microscope (120) is larger than the maximum field of view of both the scanning probe microscope (140) and the scanning particle microscope (120), wherein the method comprises the step of determining the distance between the measuring point (195) of the scanning probe microscope (140) and the optical axis of the scanning particle microscope (120).
摘要翻译：本发明涉及一种用扫描粒子显微镜（120）和至少一个具有探针的扫描探针显微镜（140）来检查物体的装置和方法，其中扫描微粒显微镜（120）和至少一个扫描探针显微镜（140）在公共真空室（102）中相对于彼此间隔开，使得扫描显微镜（120）的光轴与扫描探针显微镜（140）的测量点（195）之间的距离）与扫描型微粒显微镜（120）的光轴垂直的方向大于扫描型显微镜（140）和扫描型微粒显微镜（120）的最大视野，其特征在于，包括以下步骤：确定扫描探针显微镜（140）的测量点（195）与扫描粒子显微镜（120）的光轴之间的距离。

4. 发明申请

WO2009106288A3 METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES 审中-公开
公开(公告)号：WO2009106288A3
公开(公告)日：2009-09-03
申请号：PCT/EP2009/001296
申请日：2009-02-24
申请人： NAWOTEC GMBH , BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFFMANN, Thorsten
发明人： BUDACH, Michael , BRET, Tristan , EDINGER, Klaus , HOFFMANN, Thorsten
IPC分类号： G03F1/00
摘要： The present invention relates to a method for processing an object with miniaturized structures, having the steps of : feeding a reaction gas onto a surface of the object; processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object, detecting interaction products of the beam with the object, and deciding whether the processing of the object must be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object, the region to be processed being subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment being integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

5. 发明申请

WO2011151116A1 A METHOD FOR DETERMINING THE PERFORMANCE OF A PHOTOLITHOGRAPHIC MASK 审中-公开
标题翻译：一种确定光刻掩模性能的方法
公开(公告)号：WO2011151116A1
公开(公告)日：2011-12-08
申请号：PCT/EP2011/056869
申请日：2011-04-29
申请人： CARL ZEISS SMS GMBH , WAIBLINGER, Markus , BUDACH, Michael , SCHERÜBL, Thomas , BEYER, Dirk
发明人： WAIBLINGER, Markus , BUDACH, Michael , SCHERÜBL, Thomas , BEYER, Dirk
IPC分类号： G01N23/225 , G03F1/00 , G03F1/14 , G01N23/22
CPC分类号： H01J37/28 , G01N23/2208 , G01N23/2251 , G01N2223/072 , G01N2223/079 , G03F1/24 , G03F1/86
摘要： The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.
摘要翻译：本发明涉及一种用于在曝光波长处确定光刻掩模的性能的方法，其步骤是扫描至少一个电子束穿过光刻掩模的至少一部分，测量由至少一个电子束产生的信号与光刻掩模的至少一部分，并且基于所测量的信号确定曝光波长处的光刻掩模的至少一部分的性能。

6. 发明申请

WO2014202517A2 VERFAHREN UND VORRICHTUNG ZUM AUTOMATISIERTEN BESTIMMEN EINES REFERENZPUNKTES EINER AUSRICHTUNGSMARKIERUNG AUF EINEM SUBSTRAT EINER PHOTOLITHOGRAPHISCHEN MASKE 审中-公开
标题翻译： METHOD AND APPARATUS FOR AUTOMATED确定登记号码的一个参考点ON A SUBSTRATE光刻掩模
公开(公告)号：WO2014202517A2
公开(公告)日：2014-12-24
申请号：PCT/EP2014/062533
申请日：2014-06-16
申请人： CARL ZEISS SMS GMBH
发明人： BUDACH, Michael , SCHÖNBERGER, Ralf , JÖST, Michael
IPC分类号： G03F9/00
CPC分类号： G01B11/14 , G03F7/70141 , G03F9/7007 , G03F9/7088
摘要： Die Erfindung betrifft ein Verfahren zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske, das die folgenden Schritte aufweist: (a) Durchführen eines ersten Linienscans innerhalb eines Startbereichs des Substrats in einer ersten Richtung auf einer Oberfläche des Substrats, wobei die Ausrichtungsmarkierung innerhalb des Startbereichs angeordnet ist, zum Auffinden eines ersten Elements der Ausrichtungsmarkierung; (b) Durchführen eines zweiten Linienscans innerhalb des Startbereichs in zumindest einer zweiten Richtung auf der Oberfläche des Substrats, welche die ersten Richtung schneidet, zum Auffinden eines zweiten Elements der Ausrichtungsmarkierung; (c) Abschätzen des Referenzpunktes der Ausrichtungsmarkierung aus dem aufgefundenen ersten Element und dem aufgefundenen zweiten Element der Ausrichtungsmarkierung; und (d) Abbilden eines Zielbereichs um den abgeschätzten Referenzpunkt der Ausrichtungsmarkierung herum zum Bestimmen des Referenzpunktes der Ausrichtungsmarkierung, wobei das Abbilden mit einer höheren Auflösung erfolgt als das Durchführen der Linienscans in den Schritten (a) und (b).
摘要翻译：本发明涉及自动确定光刻掩模的衬底上的对准标记的参考点，其包含以下步骤的方法：（a）所述基材的起始范围内以第一方向在基板的一个表面上执行第一线扫描，其中，所述对准标记设置用于定位的第一构件的对准标记的开始区域内; （B）在至少一个第二方向上的衬底的表面上的启动区域内执行的第二扫描线，相交的第一方向上，以定位对准标记的第二元素; （C）估计从所述检索到的第一元件和对准标记的发现第二元件的对准标记的参考点; 和（d）成像围绕对准标记的估计出的基准点的目标区域周围，用于确定对准标记的参考点，其中以更高的分辨率比确实在步骤执行行扫描的映射的（a）和（b）。

7. 发明申请

WO2022263534A1 METHOD AND APPARATUS FOR PARTICLE BEAM-INDUCED PROCESSING OF A DEFECT OF A MICROLITHOGRAPHIC PHOTOMASK 审中-公开
公开(公告)号：WO2022263534A1
公开(公告)日：2022-12-22
申请号：PCT/EP2022/066347
申请日：2022-06-15
申请人： CARL ZEISS SMT GMBH
发明人： RENSING, Christian , BRENDEL, Michael , BUDACH, Michael , REUSS, Martin Guenter
IPC分类号： G03F1/74 , G03F1/72 , G03F1/80 , C23F1/12 , C23F4/00
摘要： Method for particle beam-induced processing of a defect (D, D') of a microlithographic photomask (100), including the steps of: a) providing (S1) an image (300) of at least a portion of the photomask (100), b) determining (S2) a geometric shape of a defect (D, D') in the image (300) as a repair shape (302, 302'), with the repair shape (302, 302') comprising a number n of pixels (304), c) subdividing (S3), in computer-implemented fashion, the repair shape (302, 302') into a number k of sub-repair shapes (306), with an i-th of the k sub-repair shapes (306) having a number m, of pixels (304), which are a subset of the n pixels (304) of the repair shape (302, 302'), d) providing (S4) an activating particle beam (202) and a process gas at each of the m, pixels (304) of a first of the sub-repair shapes (306) for the purposes of processing the first of the sub-repair shapes (306), e) repeating (S5) step d) for the first of the sub-repair shapes (306) over a number j of repetition cycles, and f) repeating (S6) steps d) and e) for each further sub-repair shape (306).

8. 发明申请

WO2022058346A2 APPARATUS FOR ANALYSING AND/OR PROCESSING A SAMPLE WITH A PARTICLE BEAM AND METHOD 审中-公开
公开(公告)号：WO2022058346A2
公开(公告)日：2022-03-24
申请号：PCT/EP2021/075319
申请日：2021-09-15
申请人： CARL ZEISS SMT GMBH
发明人： AUTH, Nicole , BUDACH, Michael , HOFMANN, Thorsten
IPC分类号： H01J37/02 , H01J37/09 , H01J2237/004 , H01J2237/0206 , H01J2237/0458 , H01J37/026
摘要： What is proposed is an apparatus (100) for analysing and/or processing a sample (200) with a particle beam (112), comprising:a sample stage (120) for holding the sample (200);a providing unit (110) for providing the particle beam (112) comprising: an opening (114) for guiding the particle beam (112) to a processing position (202) on the sample (200); anda shielding element (116) for shielding an electric field (E) generated by charges (Q) accumulated on the sample (200); wherein the shielding element (116) covers the opening (114), is embodied in sheetlike fashion and comprises an electrically conductive mate-rial; wherein the shielding element (116) comprises a convex section (117), this section being convex in relation to the sample stage (120); andwherein the convex section (117) has a through opening (118) for the particle beam (112) to pass through to the sample (200).

9. 发明申请

WO2019238668A1 VORRICHTUNGEN UND VERFAHREN ZUR UNTERSUCHUNG UND/ODER BEARBEITUNG EINES ELEMENTS FÜR DIE PHOTOLITHOGRAPHIE 审中-公开
公开(公告)号：WO2019238668A1
公开(公告)日：2019-12-19
申请号：PCT/EP2019/065195
申请日：2019-06-11
申请人： CARL ZEISS SMT GMBH
发明人： BUDACH, Michael , AUTH, Nicole , RENSING, Christian , FREYTAG, Alexander , WOJEK, Christian
IPC分类号： G01N23/20008 , G03F1/00 , G03F1/72 , H01J37/30 , H01J37/305
摘要： Die Erfindung betrifft eine Vorrichtung (1000) zur Untersuchung und/oder Bearbeitung eines Elements für die Photolithographie (110, 200) mit einem Strahl geladener Teilchen (170, 1028), wobei die Vorrichtung (1000) aufweist: (a) Mittel zur Aufnahme von Messdaten (330, 440, 450, 460, 470), während das Element für die Photolithographie (110, 200) dem Strahl geladener Teilchen ausgesetzt ist (170, 1028); und (b) Mittel zur Vorausbestimmung einer Drift (410, 420, 430, 480) des Strahls geladener Teilchen (160, 1028) relativ zu dem Element für die Photolithographie (110, 200) mit einem trainierten Modell maschinellen Lernens(800)und/oder einem prädiktiven Filter, wobei das trainierte Modell maschinellen Lernens (800) und/oder das prädiktive Filter als Eingabedaten (830) zumindest die Messdaten (330, 440, 450, 460, 470) verwenden.

10. 发明申请

WO2019243437A2 APPARATUS AND METHOD FOR EXAMINING AND/OR PROCESSING A SAMPLE 审中-公开
公开(公告)号：WO2019243437A2
公开(公告)日：2019-12-26
申请号：PCT/EP2019/066235
申请日：2019-06-19
申请人： CARL ZEISS SMT GMBH
发明人： BAUR, Christof , BUDACH, Michael
IPC分类号： H01J37/28 , G01Q20/00 , G01Q30/02
摘要： The present invention relates to an apparatus (2400, 2600) for examining and/or processing a sample (400, 2010), said apparatus comprising: (a) a scanning particle microscope (2410) for providing a beam of charged particles (840), which can be directed on a surface of the sample (400, 2010); and (b) a scanning probe microscope (2470) with a deflectable probe (200, 500, 800, 900, 1000, 1100, 1200, 1300, 1500, 1600, 1640, 1670, 2600); (c) wherein a detection structure (230, 530, 1030, 1130, 133, 30, 1630, 1690, 2630) is attached to the deflectable probe (200, 500, 800, 900, 1000, 100, 1200, 1300, 1500, 1600, 1640, 1670, 2600).

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