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    • 4. 发明专利
    • MASK FOR X-RAY EXPOSURE AND X-RAY ALIGNER USING SAME
    • JPH07130645A
    • 1995-05-19
    • JP29895493
    • 1993-11-04
    • CANON KK
    • NOSE TETSUSHIMAEHARA HIROSHI
    • G03F1/22G03F7/20H01L21/027G03F1/16
    • PURPOSE:To enable alignment of a mask and a wafer with high precision, by forming a circuit pattern and an alignment pattern on an X-ray transmission mask, for an X-ray exposure mask, and forming a metal layer for shielding an alignment beam with which the alignment pattern is irradiated, in the area where the circuit pattern is formed. CONSTITUTION:As to a mask XM for X-ray exposure, a circuit pattern and an alignment pattern are formed on an X-ray transmission film 32, and a metal film 21 for shielding an alignment beam is formed in an circuit pattern area 27. When the alignment beam is made to enter an alignment pattern area 28 from above the mask XM for X-ray exposure, the alignment beam does not enter a circuit pattern composed of X-ray absorber 25 in the circuit pattern area 27, because the beam is shielded by the metal film 21. Hence it can be prevented that scattering light is generated from the circuit pattern and enters an alignment detection system, so that the highly precise alignment with the wafer is enabled. Thereby a mask for X-ray exposure capable of highly precise alignment can be realized.
    • 5. 发明专利
    • INSPECTION DEVICE AND METHOD, AND SYSTEM THEREWITH
    • JPH06317534A
    • 1994-11-15
    • JP9954193
    • 1993-04-26
    • CANON KK
    • TSUJI TOSHIHIKOTAKEUCHI SEIJIMIYAZAKI KYOICHIYOSHII MINORUNOSE TETSUSHIMORI TETSUZO
    • G01B11/24G01B11/30G01N21/88G01N21/94G01N21/956
    • PURPOSE:To detect micro foreign mater or defects at a high S/N ratio by radiating two light fluxes, which are different from each other in polarization status and wavelength, on the inspection position and generating a heterodyne interference between one light flux in which the polarization status of scattered light changed and the other light flux. CONSTITUTION:A laser beam 12a is led through an optical scanning system consisting of a scanning mirror 13 and an ftheta lens system 14 and then it is divided into a P polarization laser beam 15a and an S polarization laser beam 15b through a polarization beam splitter 15. The beam 15a is set by a filter system 16 in a manner to have an intensity most suitable to the foreign matter inspection and it is converged on an inspection surface 21 by a mirror 18 to form a spot 20. On the other hand, the beam 15b is also converged on the spot 20 on the surface of a face to be inspected 21 by a mirror 19 after passing through a filter system 17. Then, a P-polarized zero-th order diffracted light 23 out of the scattered light, which are directed in a photoelectric detector 29 direction from the spot 20, and a P-polarized element of backscattered light 24 caused by foreign matter or defects generate heterodyne interference because of the alignment of polarization plane, so that only the scattered light caused by the foreign matters or defects can be detected as a beat signal.