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1. 发明申请

WO2011081079A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 审中-公开
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：WO2011081079A1
公开(公告)日：2011-07-07
申请号：PCT/JP2010/073259
申请日：2010-12-16
申请人： CANON KABUSHIKI KAISHA , UEDA, Shigenori , KOJIMA, Satoshi
发明人： UEDA, Shigenori , KOJIMA, Satoshi
IPC分类号： G03G5/08
CPC分类号： G03G5/08235 , G03G5/08214
摘要： The present invention provides an electrophotographic photosensitive member having an a-SiC upper charge injection inhibition layer and an a-SiC surface layer, which is superior in adhesiveness, suppresses the surface deterioration, is superior in sensitivity characteristics and charging characteristics, and can keep an adequate image-forming capability for a long period of time. The upper charge injection inhibition layer contains 10 atom ppm or more and 30,000 atom ppm or less of the Group 13 atoms or the Group 15 atoms of the Periodic Table with respect to silicon atoms in the upper charge injection inhibition layer, and the ratio (C/(Si+C)) of the number of carbon atoms in the upper charge injection inhibition layer with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the upper charge injection inhibition layer is 0.10 or more and 0.60 or less; and the sum of the atom density of the silicon atoms and the atom density of the carbon atoms in the surface layer is 6.60 1022 atoms/cm3 or more, and the ratio (C/(Si+C)) of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less.
摘要翻译：本发明提供一种电子照相感光构件，其具有优异的粘合性，抑制表面变质的a-SiC上电荷注入抑制层和a-SiC表面层，具有优异的灵敏度特性和充电特性，并且可以保持足够的成像能力长时间。上电荷注入抑制层含有上电荷注入抑制层中相对于硅原子的10原子ppm以上且30,000原子ppm以下的元素周期表中的第13族原子或15族原子，上电荷注入抑制层中的碳原子数相对于上电荷注入抑制层中的硅原子数与碳原子数之和的/（Si + C））为0.10以上， 0.60以下; 并且表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×10 22原子/ cm 3以上，碳原子数的比例（C /（Si + C））相对于硅原子数和表面层中的碳原子数之和为0.61以上且0.75以下。

2. 发明申请

WO2010074099A1 IMAGE-FORMING METHOD 审中-公开
标题翻译：图像形成方法
公开(公告)号：WO2010074099A1
公开(公告)日：2010-07-01
申请号：PCT/JP2009/071356
申请日：2009-12-16
申请人： CANON KABUSHIKI KAISHA , AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke , OZAWA, Tomohito
发明人： AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke , OZAWA, Tomohito
IPC分类号： G03G5/08
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045
摘要： An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×10 22 atoms/cm 3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.
摘要翻译：提供了能够在长时间内形成高质量图像的图像形成方法。在图像形成方法中，使用电子照相感光构件，其具有由氢化非晶碳化硅形成的表面层，其中碳原子数与硅原子数与碳原子数之和的比率在表面层中为0.61以上且0.75以下，表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm 3以上，峰值波长的预曝光光比图像曝光光的峰值波长短。

3. 发明申请

WO2010098414A1 IMAGE FORMING METHOD 审中-公开
标题翻译：图像形成方法
公开(公告)号：WO2010098414A1
公开(公告)日：2010-09-02
申请号：PCT/JP2010/053018
申请日：2010-02-19
申请人： CANON KABUSHIKI KAISHA , OZAWA, Tomohito , AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke
发明人： OZAWA, Tomohito , AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke
IPC分类号： G03G5/08 , G03G13/00 , G03G15/04 , G03G21/08
CPC分类号： G03G5/08235 , G03G5/08242 , G03G5/0825 , G03G5/08257 , G03G5/08264 , G03G5/08271 , G03G2215/00957
摘要： An electrophotographic photosensitive member for use in the image forming method is formed by sequentially stacking a lower photoconductive layer and an upper photoconductive layer formed of a-Si and a surface layer formed of a-SiC in this order on a substrate; the lower photoconductive layer further contains a boron atom and the upper photoconductive layer contains no boron atom or contains a boron atom but is smaller in atom density of a boron atom than the lower photoconductive layer; and the total of an atom density of silicon atom and an atom density of a carbon atom in the surface layer is not less than 6.60x10 22 atoms/cm 3 ; and the light intensity A [μJ/cm 2 ] of pre-exposure light reaching the lower photoconductive layer out of the light intensity of pre-exposure light applied to the electrophotographic photosensitive member satisfies -12.0≤ Ln(A)≤-4.5.
摘要翻译：用于图像形成方法的电子照相感光构件通过在基板上依次堆叠由a-Si形成的下光导电层和由a-SiC形成的表面层的上光导电层而形成; 下部光电导层还含有硼原子，上部光电导层不含硼原子或含有硼原子，但硼原子的原子密度低于下部光电导层; 表面层中硅原子的原子密度和碳原子的原子密度的合计为6.60×1022原子/ cm3以上，并且在施加到电子照相感光构件的预曝光光的光强度之前到达下光导电层的预曝光光的光强度A [μJ/ cm 2]满足-12.0 = Ln（A）= - 4.5。

4. 发明公开

EP2310916A1 IMAGE-FORMING METHOD 有权
标题翻译：成像过程
公开(公告)号：EP2310916A1
公开(公告)日：2011-04-20
申请号：EP09834900.4
申请日：2009-12-16
申请人： Canon Kabushiki Kaisha
发明人： AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke , OZAWA, Tomohito
IPC分类号： G03G5/08
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045
摘要： An image-forming method is provided which enable high-quality images to be formed over a long time period. In the image-forming method, an electrophotographic photosensitive member is used having a surface layer formed of a hydrogenated amorphous silicon carbide in which a ratio of the number of carbon atoms to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less, and the sum of the atomic density of the silicon atoms and the atomic density of the carbon atoms in the surface layer is 6.60×10
22 atoms/cm
3 or more, and the peak wavelength of pre-exposure light is shorter than the peak wavelength of image exposure light.

5. 发明授权

EP2310916B1 IMAGE-FORMING METHOD 有权
标题翻译：图像形成方法
公开(公告)号：EP2310916B1
公开(公告)日：2017-09-06
申请号：EP09834900.4
申请日：2009-12-16
申请人： Canon Kabushiki Kaisha
发明人： AKIYAMA, Kazuyoshi , UEDA, Shigenori , TAZAWA, Daisuke , OZAWA, Tomohito
IPC分类号： G03G5/08 , G03G13/045 , G03G5/082 , G03G5/147
CPC分类号： G03G5/14704 , G03G5/08214 , G03G5/08221 , G03G5/08285 , G03G13/045

6. 发明公开

EP2519860A1 ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER AND ELECTROPHOTOGRAPHIC APPARATUS 审中-公开
标题翻译：电子照相感光元件和电子照相设备
公开(公告)号：EP2519860A1
公开(公告)日：2012-11-07
申请号：EP10840935.0
申请日：2010-12-16
申请人： Canon Kabushiki Kaisha
发明人： UEDA, Shigenori , KOJIMA, Satoshi
IPC分类号： G03G5/08
CPC分类号： G03G5/08235 , G03G5/08214
摘要： The present invention provides an electrophotographic photosensitive member having an a-SiC upper charge injection inhibition layer and an a-SiC surface layer, which is superior in adhesiveness, suppresses the surface deterioration, is superior in sensitivity characteristics and charging characteristics, and can keep an adequate image-forming capability for a long period of time. The upper charge injection inhibition layer contains 10 atom ppm or more and 30,000 atom ppm or less of the Group 13 atoms or the Group 15 atoms of the Periodic Table with respect to silicon atoms in the upper charge injection inhibition layer, and the ratio (C/(Si+C)) of the number of carbon atoms in the upper charge injection inhibition layer with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the upper charge injection inhibition layer is 0.10 or more and 0.60 or less; and the sum of the atom density of the silicon atoms and the atom density of the carbon atoms in the surface layer is 6.60 1022 atoms/cm3 or more, and the ratio (C/(Si+C)) of the number of carbon atoms with respect to the sum of the number of silicon atoms and the number of the carbon atoms in the surface layer is 0.61 or more and 0.75 or less.
摘要翻译：本发明提供具有a-SiC上电荷注入阻挡层和a-SiC表面层的电子照相感光构件，其具有优异的粘附性，抑制表面劣化，灵敏度特性和充电特性优异，并且可以保持足够长时间的图像形成能力。相对于上部电荷注入阻挡层中的硅原子，上部电荷注入阻挡层包含10原子ppm或更多且30,000原子ppm或更少的13族原子或元素周期表15族原子，并且比例（C 相对于上部电荷注入阻挡层中的硅原子数和碳原子数的总和，上部电荷注入阻挡层中的碳原子数量/（（Si + C））为0.10以上且 0.60以下; 并且表面层中的硅原子的原子密度和碳原子的原子密度之和为6.60×1022原子/ cm3以上，碳原子数的比例（C /（Si + C））为相对于表面层中的硅原子数和碳原子数的总和为0.61以上且0.75以下。

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