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1. 发明授权

US5801573A Protected switch having a power semiconductor device 失效
标题翻译：具有功率半导体器件的保护开关
公开(公告)号：US5801573A
公开(公告)日：1998-09-01
申请号：US884104
申请日：1997-06-27
申请人： Brendan P. Kelly , Royce Lowis
发明人： Brendan P. Kelly , Royce Lowis
IPC分类号： H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/417 , H01L29/78 , H03K17/08 , H03K17/082 , H03K17/687
CPC分类号： H01L29/7815 , H01L29/7803 , H01L29/7804 , H01L29/7808 , H03K17/0822 , H01L29/41766
摘要： A protected switch has a power semiconductor device (P) having first and second main electrodes (D and S) for coupling a load (L) between first (2) and second (3) voltage supply lines, a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device a sense current that flows between the first (d) and sense electrodes (S1) and is indicative of the current that flows between the first (D) and second (S) main electrodes. A control arrangement (S) has a sense resistance (R4) coupled to the sense electrode (S1) and across which a sense voltage is developed by the sense current (I.sub.3). A control semiconductor device (M3) has its main electrodes coupled between the control electrode (G) and the second (S) main electrode of the power semiconductor device (P). A semiconductor device (M2) has one (d) of its main electrodes coupled to the control electrode (g) of the control semiconductor device (M3) and the other (s) to the sense resistance (R4). A reference arrangement (50) provides a biasing voltage V.sub.b for the control electrode (g) of the semiconductor device (M2) to cause the semiconductor device (M2) to conduct sufficiently to cause the control semiconductor device (M3) to be non-conducting until the sense voltage reaches a reference voltage determined by the biasing voltage when the semiconductor device (M2) becomes less conducting, causing the control semiconductor device (M3) to start to conduct, so reducing the voltage at the control electrode (G) of the power semiconductor device (P) and thus reducing the current through the power semiconductor device (P).
摘要翻译：受保护的开关具有功率半导体器件（P），该功率半导体器件（P）具有用于耦合第一（2）和第二（3）电压源线之间的负载（L）的第一和第二主电极（D和S）控制电压供应线（4）和感测电极（S1），用于在功率半导体器件的操作中提供在第一（d）和感测电极（S1）之间流动的感测电流，并且指示流动的电流在第一（D）和第二（S）主电极之间。控制装置（S）具有耦合到感测电极（S1）的感测电阻（R4），并且感测电流（I3）产生感测电压。控制半导体器件（M3）的主电极耦合在功率半导体器件（P）的控制电极（G）和第二（S）主电极之间。半导体器件（M2）的主电极中的一个（d）耦合到控制半导体器件（M3）的控制电极（g），另一个耦合到检测电阻（R4）。参考装置（50）为半导体装置（M2）的控制电极（g）提供偏置电压Vb，以使半导体装置（M2）充分进行导致控制半导体装置（M3）不导通直到当半导体器件（M2）变得较小导通时，感测电压达到由偏置电压确定的参考电压，使得控制半导体器件（M3）开始导通，从而降低控制电极（G）处的电压功率半导体器件（P），从而减小通过功率半导体器件（P）的电流。

2. 发明授权

US5336943A Temperature sensing circuit 失效
标题翻译：温度检测电路
公开(公告)号：US5336943A
公开(公告)日：1994-08-09
申请号：US907477
申请日：1992-07-01
申请人： Brendan P. Kelly , Royce Lowis
发明人： Brendan P. Kelly , Royce Lowis
IPC分类号： G01K7/01 , H01L29/78 , G06G7/10 , H03K5/22
CPC分类号： H01L29/7803 , G01K7/01 , H01L29/41766
摘要： A temperature sensing circuit has a first insulated gate field effect device which is operated deep into its subthreshold region where the voltage across the device varies with temperature and has a second insulated gate field effect device which is operated in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature. A comparator compares the voltages across the first and second field effect devices and provides a signal OT indicating the temperature sensed by the first insulated gate field effect device.
摘要翻译：温度检测电路具有第一绝缘栅场效应器件，该器件深度地操作其器件中的电压随温度变化的亚阈值区域，并且具有第二绝缘栅场效应器件，其在其平方律区域的区域中操作，第二绝缘栅场效应器件两端的电压基本上与温度无关。比较器比较第一和第二场效应装置两端的电压，并提供表示由第一绝缘栅场效应装置感测的温度的信号OT。

3. 发明授权

US4408384A Method of manufacturing an insulated-gate field-effect transistor 失效
标题翻译：制造绝缘栅场效应晶体管的方法
公开(公告)号：US4408384A
公开(公告)日：1983-10-11
申请号：US407673
申请日：1982-08-12
申请人： Royce Lowis , Peter M. Tunbridge
发明人： Royce Lowis , Peter M. Tunbridge
IPC分类号： H01L29/06 , H01L29/10 , H01L29/417 , H01L29/78 , H01L21/265 , H01L21/28
CPC分类号： H01L29/0692 , H01L29/1087 , H01L29/4175 , H01L29/78
摘要： An insulated-gate field-effect transistor is disclosed which is particularly suitable for forming high-frequency transistors for a common source circuit configuration. The field-effect transistor is obtained in a simple and reliable manner using the following steps: (a) forming on an insulating layer a gate layer having separate, parallel apertures; (b) doping said epitaxial layer via said apertures so as to form parallel islands from which at least a portion of the source fingers is to be provided; (c) providing an etch-resistant mask having smaller parallel apertures each of which overlies an area of an island; (d) etching away said areas and underlying parts of the epitaxial layer so as to form parallel V-shaped grooves which expose the substrate, extend longitudinally along the islands and are adjoined along opposite sides by remaining parts of said islands, and (e) providing within the apertures of the gate layer and over the walls of the grooves parallel metal fingers which extend longitudinally along said islands to short-circuit the remaining parts of said islands to the epitaxial layer and to the substrate. These remaining parts form source fingers of the transistor. At least part of the drain fingers may also be formed in step (b).
摘要翻译：公开了一种绝缘栅场效应晶体管，其特别适用于形成用于公共源电路配置的高频晶体管。场效应晶体管以简单可靠的方式使用以下步骤获得：（a）在绝缘层上形成具有分开的平行孔的栅极层; （b）经由所述孔掺杂所述外延层，以便形成平行的岛，待从其中提供至少一部分源极指; （c）提供具有更小的平行孔的耐蚀刻掩模，每个孔覆盖在岛的一个区域上; （d）蚀刻所述外延层的所述区域和底层部分以形成平行的V形凹槽，其暴露所述基底，沿着所述岛纵向延伸并且通过所述岛的剩余部分沿着相对侧邻接，以及（e）在栅极层的孔内以及沟槽壁上平行延伸的金属指，其沿着所述岛纵向延伸，以将所述岛的剩余部分短路到外延层和衬底。这些剩余部分形成晶体管的源极。排水指的至少一部分也可以在步骤（b）中形成。

4. 发明授权

US07425752B2 Semiconductor device channel termination 有权
标题翻译：半导体器件通道端接
公开(公告)号：US07425752B2
公开(公告)日：2008-09-16
申请号：US10534329
申请日：2003-10-30
申请人： Royce Lowis
发明人： Royce Lowis
IPC分类号： H01L27/088
CPC分类号： H01L21/823481 , H01L21/76237
摘要： A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).
摘要翻译：半导体器件具有用于使用填充有场氧化物（32）的沟槽（30）的通道终止区域和从第一主表面（8）穿过p阱（6）沿外部延伸的通道止动环（18）沟槽（30）的边缘（36）在沟槽下方延伸通过沟槽的内边缘（34）。该非对称通道止动环为通道（10）提供有效的终止，该通道可延伸至沟槽（30）。

5. 发明授权

US5563760A Temperature sensing circuit 失效
标题翻译：温度检测电路
公开(公告)号：US5563760A
公开(公告)日：1996-10-08
申请号：US760560
申请日：1991-09-16
申请人： Royce Lowis , Edward S. Eilley , Paul T. Moody , Aart G. Korteling , Brendan P. Kelley
发明人： Royce Lowis , Edward S. Eilley , Paul T. Moody , Aart G. Korteling , Brendan P. Kelley
IPC分类号： G01K7/01 , G01K3/10 , G01K3/14 , H01L29/78 , H03K17/08 , H03K17/14 , H02H5/04
CPC分类号： H01L29/7802 , G01K3/14 , G01K7/01 , H01L29/41766 , H01L2924/0002 , Y10S323/907
摘要： A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P.sub.1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P.sub.2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.
摘要翻译：一种用于感测有源半导体器件（例如半导体本体（10）的功率MOSFET（11））的温度的温度检测电路（100）。该电路具有在与有源半导体器件（11）的周边（12）相邻的第一位置（P1）处设置在半导体本体上的第一温度感测器件（R1R2），设置在有源半导体器件所述半导体本体在比所述第一位置更远离所述有源半导体器件的周边的第二位置（P2）处。当第一和第二感测装置感测到的温度差达到预定值时，例如响应于第一和第二温度感测装置的比较器的装置提供控制信号以切断有源半导体器件（11）。

6. 发明申请

US20060163652A1 Semiconductor device with sense structure 有权
标题翻译：具有感应结构的半导体器件
公开(公告)号：US20060163652A1
公开(公告)日：2006-07-27
申请号：US10528941
申请日：2003-09-12
申请人： Royce Lowis
发明人： Royce Lowis
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L24/06 , H01L24/48 , H01L24/49 , H01L29/7815 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/49113 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01014 , H01L2924/01015 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/19043 , H01L2924/3011 , H03K17/0822 , H01L2924/00 , H01L2224/45099
摘要： A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused at the edges of the groups of sense cells (16).
摘要翻译：功率半导体器件用分为功率单元（14）和感测单元（16）的多个单元进行描述。提供多个感测单元（16）的组（30,32）。该装置允许补偿在感测单元组（16）的边缘处产生的影响。

7. 发明申请

US20060071294A1 Semiconductor device channel termination 有权
标题翻译：半导体器件通道端接
公开(公告)号：US20060071294A1
公开(公告)日：2006-04-06
申请号：US10534329
申请日：2003-10-30
申请人： Royce Lowis
发明人： Royce Lowis
IPC分类号： H01L29/00
CPC分类号： H01L21/823481 , H01L21/76237
摘要： A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).
摘要翻译：半导体器件具有用于使用填充有场氧化物（32）的沟槽（30）的通道终止区域和从第一主表面（8）穿过p阱（6）沿外部延伸的通道止动环（18）沟槽（30）的边缘（36）在沟槽下方延伸通过沟槽的内边缘（34）。该非对称通道止动环为通道（10）提供有效的终止，该通道可延伸至沟槽（30）。

8. 发明授权

US5434443A Semiconductor switch including a power transistor integrated with a temperature sensor therefor 失效
标题翻译：半导体开关包括与其温度传感器集成的功率晶体管
公开(公告)号：US5434443A
公开(公告)日：1995-07-18
申请号：US240949
申请日：1994-05-10
申请人： Brendon P. Kelly , Royce Lowis , Paul T. Moody
发明人： Brendon P. Kelly , Royce Lowis , Paul T. Moody
IPC分类号： G01K7/01 , H01L21/822 , H01L27/02 , H01L27/04 , H01L29/78 , H01L27/088
CPC分类号： H01L29/7803 , G01K7/01 , H01L27/0248 , H01L29/0696 , H01L29/41766
摘要： A semiconductor switch includes a power FET and a temperature sensor for providing a control signal to switch off the power FET when it reaches a predetermined thermal condition, such as a particular temperature. The power FET consists of a semiconductor body having a first region (13) of a first conductivity type adjacent one major surface (10a) thereof, and a plurality of cells (11). Each such cell has a second region (32) of the second (opposite) conductivity type provided within the first region (13), a third region (33) of the first conductivity type formed within the second region (32), and an insulated gate overlying a conduction channel in the second region (32) between the first and third regions (33 and 13). The temperature sensor (2) is formed within the semiconductor body (10) and consists of a number of further cells (11') of the same structure as the cells (11) of the power FET. The insulated gate of each further cell (11') is electrically connected to the third region (33') so as to form a parasitic bipolar transistor having a leakage current which varies with temperature, thereby enabling the temperature sensor to provide a control signal to switch off the power FET when the predetermined thermal condition is reached.
摘要翻译：半导体开关包括功率FET和温度传感器，用于当其达到诸如特定温度的预定热条件时提供控制信号以关断功率FET。功率FET由具有邻近其主表面（10a）的第一导电类型的第一区域（13）和多个单元（11）的半导体本体组成。每个这样的单元具有设置在第一区域（13）内的第二（相对）导电类型的第二区域（32），形成在第二区域（32）内的第一导电类型的第三区域（33）栅极覆盖第一和第三区域（33和13）之间的第二区域（32）中的导电通道。温度传感器（2）形成在半导体本体（10）内并且由与功率FET的单元（11）相同结构的多个另外的单元（11'）组成。每个另外的单元（11'）的绝缘栅电连接到第三区（33'），以形成具有随温度变化的漏电流的寄生双极晶体管，从而使温度传感器能够提供控制信号当达到预定的热条件时关闭功率FET。

9. 发明授权

US07829420B2 Method of forming a channel termination region using a trench and a channel stopper ring 有权
标题翻译：使用沟槽和通道阻挡环形成通道端接区域的方法
公开(公告)号：US07829420B2
公开(公告)日：2010-11-09
申请号：US12190171
申请日：2008-08-12
申请人： Royce Lowis
发明人： Royce Lowis
IPC分类号： H01L21/22
CPC分类号： H01L21/823481 , H01L21/76237
摘要： A semiconductor device has a channel termination region for using a trench 30 filled with field oxide 32 and a channel stopper ring 18 which extends from the first major surface 8 through p-well 6 along the outer edge 36 of the trench 30, under the trench and extends passed the inner edge 34 of the trench. This asymmetric channel stopper ring provides an effective termination to the channel 10 which can extend as far as the trench 30.
摘要翻译：半导体器件具有用于使用填充有场氧化物32的沟槽30的沟道终止区域和在沟槽30的下方沿着沟槽30的外边缘36从第一主表面8穿过p阱6延伸的沟道止动环18 并且延伸通过沟槽的内边缘34。这种非对称通道止动环为通道10提供有效的端接，其可以延伸到沟槽30的最远处。

10. 发明授权

US07439582B2 Semiconductor device with sense structure 有权
标题翻译：具有感应结构的半导体器件
公开(公告)号：US07439582B2
公开(公告)日：2008-10-21
申请号：US10528941
申请日：2003-09-12
申请人： Royce Lowis
发明人： Royce Lowis
IPC分类号： H01L29/72
CPC分类号： H01L29/7813 , H01L24/06 , H01L24/48 , H01L24/49 , H01L29/7815 , H01L2224/04042 , H01L2224/05554 , H01L2224/05599 , H01L2224/0603 , H01L2224/48247 , H01L2224/48472 , H01L2224/4903 , H01L2224/49051 , H01L2224/49113 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01014 , H01L2924/01015 , H01L2924/01082 , H01L2924/1306 , H01L2924/13091 , H01L2924/19043 , H01L2924/3011 , H03K17/0822 , H01L2924/00 , H01L2224/45099
摘要： A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused at the edges of the groups of sense cells (16).
摘要翻译：功率半导体器件用分为功率单元（14）和感测单元（16）的多个单元进行描述。提供多个感测单元（16）的组（30,32）。该装置允许补偿在感测单元组（16）的边缘处产生的影响。

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