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1. 发明授权

US4408384A Method of manufacturing an insulated-gate field-effect transistor 失效
标题翻译：制造绝缘栅场效应晶体管的方法
公开(公告)号：US4408384A
公开(公告)日：1983-10-11
申请号：US407673
申请日：1982-08-12
申请人： Royce Lowis , Peter M. Tunbridge
发明人： Royce Lowis , Peter M. Tunbridge
IPC分类号： H01L29/06 , H01L29/10 , H01L29/417 , H01L29/78 , H01L21/265 , H01L21/28
CPC分类号： H01L29/0692 , H01L29/1087 , H01L29/4175 , H01L29/78
摘要： An insulated-gate field-effect transistor is disclosed which is particularly suitable for forming high-frequency transistors for a common source circuit configuration. The field-effect transistor is obtained in a simple and reliable manner using the following steps: (a) forming on an insulating layer a gate layer having separate, parallel apertures; (b) doping said epitaxial layer via said apertures so as to form parallel islands from which at least a portion of the source fingers is to be provided; (c) providing an etch-resistant mask having smaller parallel apertures each of which overlies an area of an island; (d) etching away said areas and underlying parts of the epitaxial layer so as to form parallel V-shaped grooves which expose the substrate, extend longitudinally along the islands and are adjoined along opposite sides by remaining parts of said islands, and (e) providing within the apertures of the gate layer and over the walls of the grooves parallel metal fingers which extend longitudinally along said islands to short-circuit the remaining parts of said islands to the epitaxial layer and to the substrate. These remaining parts form source fingers of the transistor. At least part of the drain fingers may also be formed in step (b).
摘要翻译：公开了一种绝缘栅场效应晶体管，其特别适用于形成用于公共源电路配置的高频晶体管。场效应晶体管以简单可靠的方式使用以下步骤获得：（a）在绝缘层上形成具有分开的平行孔的栅极层; （b）经由所述孔掺杂所述外延层，以便形成平行的岛，待从其中提供至少一部分源极指; （c）提供具有更小的平行孔的耐蚀刻掩模，每个孔覆盖在岛的一个区域上; （d）蚀刻所述外延层的所述区域和底层部分以形成平行的V形凹槽，其暴露所述基底，沿着所述岛纵向延伸并且通过所述岛的剩余部分沿着相对侧邻接，以及（e）在栅极层的孔内以及沟槽壁上平行延伸的金属指，其沿着所述岛纵向延伸，以将所述岛的剩余部分短路到外延层和衬底。这些剩余部分形成晶体管的源极。排水指的至少一部分也可以在步骤（b）中形成。

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