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1. 发明授权

US07368369B2 Method for activating P-type semiconductor layer 有权
标题翻译：激活P型半导体层的方法
公开(公告)号：US07368369B2
公开(公告)日：2008-05-06
申请号：US11049981
申请日：2005-02-04
申请人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
IPC分类号： H01L21/322 , H01L21/04 , H01L21/302 , H01L21/31
CPC分类号： H01L21/3228 , H01L21/0237 , H01L21/0254 , H01L21/02579
摘要： A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.
摘要翻译：在本发明中公开了一种用于激活半导体器件的P型半导体层的方法。上述方法可以通过等离子体激活半导体器件的P型半导体层中的杂质。等离子体包括包含VI族化合物元素的气体源。根据本发明的由等离子体激活的半导体器件的性能类似于现有技术中由热激活的半导体器件的性能。因此，本发明可以提供用于激活半导体器件的P型半导体层的方法，然后再加热。此外，在本发明中，在通过等离子体的激活处理中，P型半导体层以外的层不受等离子体的影响。也就是说，根据本发明的活化方法不会在半导体器件的P型半导体层以外的层中引起任何副反应。因此，本发明公开了一种通过等离子体代替热来激活半导体结构的P型半导体层的有效方法。

2. 发明申请

US20050130396A1 Method for activating P-type semiconductor layer 有权
标题翻译：激活P型半导体层的方法
公开(公告)号：US20050130396A1
公开(公告)日：2005-06-16
申请号：US11049981
申请日：2005-02-04
申请人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
IPC分类号： H01L33/00 , H01L21/205 , H01L21/265 , H01L21/322 , H01L21/324
CPC分类号： H01L21/3228 , H01L21/0237 , H01L21/0254 , H01L21/02579
摘要： A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.
摘要翻译：在本发明中公开了一种用于激活半导体器件的P型半导体层的方法。上述方法可以通过等离子体激活半导体器件的P型半导体层中的杂质。等离子体包括包含VI族化合物元素的气体源。根据本发明的由等离子体激活的半导体器件的性能类似于现有技术中由热激活的半导体器件的性能。因此，本发明可以提供用于激活半导体器件的P型半导体层的方法，然后再加热。此外，在本发明中，在通过等离子体的激活处理中，P型半导体层以外的层不受等离子体的影响。也就是说，根据本发明的活化方法不会在半导体器件的P型半导体层以外的层中引起任何副反应。因此，本发明公开了一种通过等离子体代替热来激活半导体结构的P型半导体层的有效方法。

3. 发明申请

US20060284321A1 LED structure for flip-chip package and method thereof 审中-公开
标题翻译：用于倒装芯片封装的LED结构及其方法
公开(公告)号：US20060284321A1
公开(公告)日：2006-12-21
申请号：US11471482
申请日：2006-06-21
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L23/48
CPC分类号： H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
摘要翻译： LED结构可以通过使用倒装芯片封装封装。 LED结构被传导增强层覆盖。然后在导电增强层上形成凸起区域定义层，以在下面的p焊盘和n焊盘露出凸块区域部分，然后在凸块区域部分上形成凸台。随后去除碰撞区域定义层，然后暴露导电增强层。

4. 发明申请

US20060286694A1 Method for fabricating LED 审中-公开
标题翻译：制造LED的方法
公开(公告)号：US20060286694A1
公开(公告)日：2006-12-21
申请号：US11455839
申请日：2006-06-20
申请人： Bor-Jen Wu , Mei-Hui Wu , Ken Kai-fu Chang , Chien-An Chen , Yuan-Hsiao Chang , Li-Shei Yeh
发明人： Bor-Jen Wu , Mei-Hui Wu , Ken Kai-fu Chang , Chien-An Chen , Yuan-Hsiao Chang , Li-Shei Yeh
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： A high etching selective layer and a light emitting structure are formed subsequently on a semiconductor substrate. Then, a p-type Ohmic contact layer and a metal substrate are formed subsequently on the light emitting structure. The semiconductor substrate and the high etching selective layer are removed. Next, an n-type electrode and a transparent conductive layer are formed adjacent to surface of the light emitting structure opposite to the metal layer.
摘要翻译：随后在半导体衬底上形成高蚀刻选择层和发光结构。然后，在发光结构上随后形成p型欧姆接触层和金属基板。去除半导体衬底和高蚀刻选择层。接下来，与发光结构的与金属层相反的表面相邻地形成n型电极和透明导电层。

5. 发明申请

US20050230699A1 Light-emitting device with improved optical efficiency 审中-公开
标题翻译：具有提高光学效率的发光装置
公开(公告)号：US20050230699A1
公开(公告)日：2005-10-20
申请号：US11104463
申请日：2005-04-13
申请人： Bor-Jen Wu , Chien-An Chen , Mei-Hui Wu , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Chien-An Chen , Mei-Hui Wu , Yuan-Hsiao Chang
IPC分类号： H01L27/15 , H01L33/22 , H01L33/46
CPC分类号： H01L33/22 , H01L33/46
摘要： A light-emitting device with improved optical efficiency is disclosed. A semiconductor substrate underlies active p-n junction layers, and has an internal scattering/reflecting surface near the bottom surface of the semiconductor substrate. Accordingly, the light originated at the active p-n junction layers is internally reflected from the internally curved reflecting surface, and substantially passes though the top surface of the semiconductor substrate.
摘要翻译：公开了一种具有改善的光学效率的发光器件。半导体衬底位于有源p-n结层的底部，并且在半导体衬底的底表面附近具有内部散射/反射表面。因此，起始于活性p-n结层的光从内部弯曲的反射表面内部反射，并且基本上穿过半导体衬底的顶表面。

6. 发明授权

US06963167B2 Electrode structure for a light-emitting element 失效
标题翻译：用于发光元件的电极结构
公开(公告)号：US06963167B2
公开(公告)日：2005-11-08
申请号：US10733408
申请日：2003-12-12
申请人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
发明人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
IPC分类号： H01J1/62 , H01L33/38 , H05B33/02
CPC分类号： H01L33/38 , H01L33/20
摘要： An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.
摘要翻译：用于发光元件的电极结构包括第一电极和第二电极。第一电极具有彼此并联的多个第一指状物，第一连接部分和至少第一接触部分。每个第一手指具有第一端和第二端。多个第一端连接到第一连接部分。第一接触部分插入在任何第一端和第一连接部分之间。第二电极具有彼此并联的多个第二指状物，第二连接部分和至少第二接触部分。每个第二手指具有第三端和第四端，并且任何第二手指位于并平行于任何两个第一手指之间。多个第三端连接到第二连接部分。第二接触部分插入任何第三端和第二连接部分之间。第二电极在多个第二端中限定多个六边形单元。每个六边形单元将其四个侧面共享到其相邻的六边形单元，并且四边包括两个第二指状物和第二结合部分。每个第二端延伸到每个六边形单元的中心。

7. 发明申请

US20050127817A1 Electrode structure for a light-emitting element 失效
公开(公告)号：US20050127817A1
公开(公告)日：2005-06-16
申请号：US10733408
申请日：2003-12-12
申请人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chen-An Chen
发明人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chen-An Chen
IPC分类号： H01J1/62 , H01L33/38 , H05B33/02
CPC分类号： H01L33/38 , H01L33/20
摘要： An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

8. 发明申请

US20090140282A1 Led structure for flip-chip package and method thereof 审中-公开
标题翻译：用于倒装芯片封装的LED结构及其方法
公开(公告)号：US20090140282A1
公开(公告)日：2009-06-04
申请号：US12292716
申请日：2008-11-25
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L2224/45144 , H01L2224/48091 , H01L2224/49107 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： LED structure can be packaged by using flip-chip package. An LED structure is covered by a conduction enhancing layer. A bumping area definition layer is then formed on the conduction enhancing layer to expose bumping area portions with p-pad and n-pad underneath, and a bumping pad is then formed over the bumping area portions. The bumping area definition layer and then exposed conduction enhancing layer is removed subsequently.
摘要翻译： LED结构可以通过使用倒装芯片封装封装。 LED结构被传导增强层覆盖。然后在导电增强层上形成凸起区域定义层，以在下面的p焊盘和n焊盘露出凸块区域部分，然后在凸块区域部分上形成凸台。随后去除碰撞区域定义层，然后暴露导电增强层。

9. 发明授权

US06884646B1 Method for forming an LED device with a metallic substrate 有权
标题翻译：用金属基板形成LED器件的方法
公开(公告)号：US06884646B1
公开(公告)日：2005-04-26
申请号：US10796200
申请日：2004-03-10
申请人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Mei-Hui Wu , Chien-An Chen , Yuan-Hsiao Chang
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/0079
摘要： An LED epitaxial structure and a first electrode layer are formed on a provisional substrate in sequence. Then, a metallic permanent substrate is formed on the first electrode layer, and the provisional substrate is removed to expose a surface of the LED epitaxial structure. A plurality of second electrodes is formed on the surface of the LED epitaxial structure. Finally, the metallic permanent substrate, the first electrode layer, and the LED epitaxial structure are diced to form a plurality of LED devices.
摘要翻译：依次在临时衬底上形成LED外延结构和第一电极层。然后，在第一电极层上形成金属永久性基板，除去临时基板，露出LED外延结构的表面。在LED外延结构的表面上形成多个第二电极。最后，金属永久性基板，第一电极层和LED外延结构被切割以形成多个LED器件。

10. 发明申请

US20130277692A1 STACKED LED DEVICE WITH DIAGONAL BONDING PADS 有权
标题翻译：堆叠LED设备与对角接头垫
公开(公告)号：US20130277692A1
公开(公告)日：2013-10-24
申请号：US13450682
申请日：2012-04-19
申请人： Yuan-Hsiao Chang , Yi-An Lu
发明人： Yuan-Hsiao Chang , Yi-An Lu
IPC分类号： H01L33/08 , H01L27/15
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
摘要翻译：半导体发光器件包括衬底和衬底上的第一外延结构。第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。第一电极耦合到第一掺杂层。第二电极被耦合到面向与第一电极相同的方向的第二掺杂层。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。第三电极耦合到面向与第一电极相同方向的第三掺杂层。第四电极耦合到面向与第一电极相同方向的第四掺杂层。粘合剂层位于第一外延结构和第二外延结构之间。

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