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1. 发明申请

US20220378973A1 UVC LED Disinfecting Device 有权
公开(公告)号：US20220378973A1
公开(公告)日：2022-12-01
申请号：US17329595
申请日：2021-05-25
申请人： Bor-Jen WU , Chia-Bin TSEN , Yu-Yen WANG , Hui-Chi HSU , Hsien-Hsin TSAI
发明人： Bor-Jen WU , Chia-Bin TSEN , Yu-Yen WANG , Hui-Chi HSU , Hsien-Hsin TSAI
IPC分类号： A61L9/20
摘要： This invention provides an air disinfecting device for disinfecting or decontaminate air, which comprises a first metal plate and a second metal plate opposite to the first metal plate, a UVC LED mounted on the first metal plate, and a power supply providing power to the UVC LED. The second metal plate has an area large enough such that lights emitted from the UVC LED will be enclosed inside the air disinfection device.

2. 发明申请

US20210013367A1 System and Method for Making Micro LED Display 有权
公开(公告)号：US20210013367A1
公开(公告)日：2021-01-14
申请号：US17036504
申请日：2020-09-29
申请人： Bor-Jen Wu , Chia-Bin Tsen
发明人： Bor-Jen Wu , Chia-Bin Tsen
IPC分类号： H01L33/00 , H01L33/50 , H01L33/32 , H01L25/075
摘要： By using chip-by-chip, mainly separation technology, micro LED display can be made very accurately and efficiently. Firstly, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Secondly, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip can be fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can also be provided as LED display substrate. A light conversion layer and color defining layer can be patterned and sequentially formed on each LED chip individually to provide a LED display.

3. 发明申请

US20130182430A1 Planar LED Lighting Apparatus 审中-公开
标题翻译：平面LED照明器具
公开(公告)号：US20130182430A1
公开(公告)日：2013-07-18
申请号：US13462925
申请日：2012-05-03
申请人： Bor-Jen WU
发明人： Bor-Jen WU
IPC分类号： F21V13/02 , F21V7/04 , F21V7/00
CPC分类号： F21V7/0008 , F21S8/04 , F21V3/04 , F21V7/05 , F21V7/09 , F21Y2103/10 , F21Y2115/10
摘要： A planar LED lighting apparatus includes a housing and multiple LEDs. The housing includes a reflective body and a light output surface opposing the reflective body. The multiple LEDs are mounted on sidewalls of the housing, and light from the multiple LEDs is reflected by the reflective body to travel toward the light output surface.
摘要翻译：平面LED照明装置包括壳体和多个LED。壳体包括反射体和与反射体相对的光输出表面。多个LED安装在壳体的侧壁上，并且来自多个LED的光被反射体反射以朝向光输出表面行进。

4. 发明授权

US07368369B2 Method for activating P-type semiconductor layer 有权
标题翻译：激活P型半导体层的方法
公开(公告)号：US07368369B2
公开(公告)日：2008-05-06
申请号：US11049981
申请日：2005-02-04
申请人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
发明人： Bor-Jen Wu , Nae-Guann Yih , Yuan-Hsiao Chang
IPC分类号： H01L21/322 , H01L21/04 , H01L21/302 , H01L21/31
CPC分类号： H01L21/3228 , H01L21/0237 , H01L21/0254 , H01L21/02579
摘要： A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprises a gas source including a VI Group compound element. The performance of the semiconductor device activated by plasma according to this invention is similar to the performance of the semiconductor device activated by heat in the prior art. Therefore, this invention can provide a method, other then heat, for activating the P-type semiconductor layer of a semiconductor device. Moreover, in this invention, during the activating process by plasma, the layers other than P-type semiconductor layer will not be affected by plasma. That is, the activating process according to this invention will not cause any side-reactions in the layers other than the P-type semiconductor layer of a semiconductor device. Thus, this invention discloses an efficient method for activating a P-type semiconductor layer of a semiconductor structure by plasma instead of heat.
摘要翻译：在本发明中公开了一种用于激活半导体器件的P型半导体层的方法。上述方法可以通过等离子体激活半导体器件的P型半导体层中的杂质。等离子体包括包含VI族化合物元素的气体源。根据本发明的由等离子体激活的半导体器件的性能类似于现有技术中由热激活的半导体器件的性能。因此，本发明可以提供用于激活半导体器件的P型半导体层的方法，然后再加热。此外，在本发明中，在通过等离子体的激活处理中，P型半导体层以外的层不受等离子体的影响。也就是说，根据本发明的活化方法不会在半导体器件的P型半导体层以外的层中引起任何副反应。因此，本发明公开了一种通过等离子体代替热来激活半导体结构的P型半导体层的有效方法。

5. 发明授权

US06963167B2 Electrode structure for a light-emitting element 失效
标题翻译：用于发光元件的电极结构
公开(公告)号：US06963167B2
公开(公告)日：2005-11-08
申请号：US10733408
申请日：2003-12-12
申请人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
发明人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chien-An Chen
IPC分类号： H01J1/62 , H01L33/38 , H05B33/02
CPC分类号： H01L33/38 , H01L33/20
摘要： An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.
摘要翻译：用于发光元件的电极结构包括第一电极和第二电极。第一电极具有彼此并联的多个第一指状物，第一连接部分和至少第一接触部分。每个第一手指具有第一端和第二端。多个第一端连接到第一连接部分。第一接触部分插入在任何第一端和第一连接部分之间。第二电极具有彼此并联的多个第二指状物，第二连接部分和至少第二接触部分。每个第二手指具有第三端和第四端，并且任何第二手指位于并平行于任何两个第一手指之间。多个第三端连接到第二连接部分。第二接触部分插入任何第三端和第二连接部分之间。第二电极在多个第二端中限定多个六边形单元。每个六边形单元将其四个侧面共享到其相邻的六边形单元，并且四边包括两个第二指状物和第二结合部分。每个第二端延伸到每个六边形单元的中心。

6. 发明申请

US20050127817A1 Electrode structure for a light-emitting element 失效
公开(公告)号：US20050127817A1
公开(公告)日：2005-06-16
申请号：US10733408
申请日：2003-12-12
申请人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chen-An Chen
发明人： Bor-Jen Wu , Mei-Hui Wu , Yuan-Hsiao Chang , Chen-An Chen
IPC分类号： H01J1/62 , H01L33/38 , H05B33/02
CPC分类号： H01L33/38 , H01L33/20
摘要： An electrode structure for a light-emitting element includes a first electrode and a second electrode. The first electrode has a plurality of first fingers paralleling with each other, a first connective part, and at least a first contact part. Each first finger has a first end and a second end. Pluralities of first ends connect to the first connective part. The first contact part interposes between any first end and the first connective part. The second electrode has a plurality of second fingers paralleling with each other, a second connective part, and at least a second contact part. Each second finger has a third end and a fourth end, and any second finger is between and parallels to any two first fingers. Pluralities of third ends connect to the second connective part. The second contact part interposes between any third end and the second connective part. The second electrode defines a plurality of hexagonal units among a plurality of second ends. Each hexagonal unit shares its four sides to its adjacent hexagonal units, and the four sides include two of the second fingers and the second connective part. Each second end extends to the center of each hexagonal unit.

7. 发明申请

US20050127374A1 Light-emitting device and forming method thereof 审中-公开
标题翻译：发光元件及其形成方法
公开(公告)号：US20050127374A1
公开(公告)日：2005-06-16
申请号：US10735701
申请日：2003-12-16
申请人： Chao-Huang Lin , Bor-Jen Wu
发明人： Chao-Huang Lin , Bor-Jen Wu
IPC分类号： H01L29/06 , H01L29/26 , H01L33/20 , H01L33/44
CPC分类号： H01L33/20 , H01L33/44
摘要： A light-emitting device and forming method thereof are disclosed. The light-emitting device has a rhombus shape and electrode pads on the longer diagonal of the rhombus shape so that the distance between the electrode pads are larger without decreasing the light-emitting area. Furthermore, since the rhombus shape of the LED is formed aligned with the easy crack direction of the substrate, the yield ratio of production is higher. The light-emitting device can be packaged by a flip chip package process.
摘要翻译：公开了一种发光器件及其形成方法。发光装置在菱形的较长对角线上具有菱形和电极焊盘，使得电极焊盘之间的距离更大，而不减少发光面积。此外，由于LED的菱形形状与基板的易裂纹方向一致，所以生产的成品率更高。可以通过倒装芯片封装工艺来封装发光器件。

8. 发明申请

US20210278198A1 Optical Measurement System 有权
公开(公告)号：US20210278198A1
公开(公告)日：2021-09-09
申请号：US17317174
申请日：2021-05-11
申请人： Yu-Yen Wang , Bor-Jen Wu , Chia-Bin Tsen
发明人： Yu-Yen Wang , Bor-Jen Wu , Chia-Bin Tsen
IPC分类号： G01B9/02 , G02B5/04 , G02B27/10
摘要： An optical system includes a collimated light source, a beam splitter, two mirrors and two lenses, a focus lens, and a detector. An initial light beam is generated by the light source and then separated by the beam splitter into a first light beam and a second light beam. The two mirrors respectively direct the first and second light beams on a sample with symmetrical paths and the two lenses focus the first and second light beam on the sample respectively. The first and second light beams are reflected from the sample and along the counterpart paths to the beam splitter. An interfered light beam is then generated by combining the reflected first and second light beams, and focused by a focus lens on a detector. A Dove prism can be configured between one mirror and one lens of the two for contrast enhancement. It can produce the photon combination with same of direction in this setup to enhance contrast.

9. 发明授权

US10903267B2 System and method for making micro LED display 有权
公开(公告)号：US10903267B2
公开(公告)日：2021-01-26
申请号：US16375388
申请日：2019-04-04
申请人： Bor-Jen Wu , Chia-Bin Tsen
发明人： Bor-Jen Wu , Chia-Bin Tsen
IPC分类号： H01L27/15 , H01L33/00 , H01L33/32 , H01L33/62 , H01L33/50 , H01L33/44
摘要： By using chip-by-chip, mainly separation technology, micro LED can be made very accurately and efficiently. First, after epitaxial process, the LED epi-wafer is processed into micro LEDs. Second, bonding substrates with driving circuits are provided for the LED epi-wafer. Then, each LED chip is fastened to the substrate chip-by-chip simultaneously or sequentially, and each LED chip may be transferred by using separation technology simultaneously or sequentially. The LED epi-wafer per se can be also provided as LED display substrate.

10. 发明申请

US20070292978A1 Method for manufacturing gallium nitride light emitting diode devices 有权
标题翻译：制造氮化镓发光二极管器件的方法
公开(公告)号：US20070292978A1
公开(公告)日：2007-12-20
申请号：US11490050
申请日：2006-07-21
申请人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
发明人： Li-Shei Yeh , Bor-Jen Wu , Chien-An Chen , Hsiao-Ping Chiu
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing GaN LED devices is disclosed herein. First, a LED epitaxial layer is formed on a provisional substrate. Part of the LED epitaxial layer is removed to form a plurality of LED epitaxial areas. Then, a first transparent conductive layer, a metal reflective layer, and a first metal bonding layer are sequentially formed on the plurality of LED epitaxial areas and then part of the first transparent conductive layer, the metal reflective layer, and the first metal bonding layer are removed. Next, a permanent substrate is provided. At least a metal layer and a second metal bonding layer are formed on the permanent substrate. Then, part of at least the metal layer and the second metal bonding layer are removed. Next, the provisional substrate is bonded to the permanent substrate by aligned wafer bonding method. Then, the provisional substrate is removed to expose a surface of the LED epitaxial layer and then an n-type electrode is formed on the surface. Next, the permanent substrate is cut to form a plurality of LED devices.
摘要翻译：本文公开了一种用于制造GaN LED器件的方法。首先，在临时衬底上形成LED外延层。 LED外延层的一部分被去除以形成多个LED外延区域。然后，在多个LED外延区域依次形成第一透明导电层，金属反射层和第一金属接合层，然后将第一透明导电层，金属反射层和第一金属接合层被删除。接下来，提供永久性基板。至少在永久性基板上形成金属层和第二金属结合层。然后，去除至少金属层和第二金属结合层的一部分。接下来，通过对准的晶片接合方法将临时衬底结合到永久衬底。然后，除去临时衬底以露出LED外延层的表面，然后在表面上形成n型电极。接下来，切割永久性基板以形成多个LED器件。

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