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1. 发明授权

US08835948B2 Stacked LED device with diagonal bonding pads 有权
标题翻译：堆叠的LED器件与对角焊盘
公开(公告)号：US08835948B2
公开(公告)日：2014-09-16
申请号：US13450682
申请日：2012-04-19
申请人： Yuan-Hsiao Chang , Yi-An Lu
发明人： Yuan-Hsiao Chang , Yi-An Lu
IPC分类号： H01L29/201 , H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
摘要翻译：半导体发光器件包括衬底和衬底上的第一外延结构。第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。第一电极耦合到第一掺杂层。第二电极被耦合到面向与第一电极相同的方向的第二掺杂层。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。第三电极耦合到面向与第一电极相同方向的第三掺杂层。第四电极耦合到面向与第一电极相同方向的第四掺杂层。粘合剂层位于第一外延结构和第二外延结构之间。

2. 发明申请

US20130277692A1 STACKED LED DEVICE WITH DIAGONAL BONDING PADS 有权
标题翻译：堆叠LED设备与对角接头垫
公开(公告)号：US20130277692A1
公开(公告)日：2013-10-24
申请号：US13450682
申请日：2012-04-19
申请人： Yuan-Hsiao Chang , Yi-An Lu
发明人： Yuan-Hsiao Chang , Yi-An Lu
IPC分类号： H01L33/08 , H01L27/15
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/62 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure.
摘要翻译：半导体发光器件包括衬底和衬底上的第一外延结构。第一外延结构包括第一掺杂层，第一发光层和第二掺杂层。第一电极耦合到第一掺杂层。第二电极被耦合到面向与第一电极相同的方向的第二掺杂层。第二外延结构包括第三掺杂层，第二发光层和第四掺杂层。第三电极耦合到面向与第一电极相同方向的第三掺杂层。第四电极耦合到面向与第一电极相同方向的第四掺杂层。粘合剂层位于第一外延结构和第二外延结构之间。

3. 发明授权

US08790963B2 LED array formed by interconnected and surrounded LED chips 有权
标题翻译： LED阵列由互连和包围的LED芯片组成
公开(公告)号：US08790963B2
公开(公告)日：2014-07-29
申请号：US13287590
申请日：2011-11-02
申请人： Ray-Hua Horng , Heng Liu , Yi-An Lu
发明人： Ray-Hua Horng , Heng Liu , Yi-An Lu
IPC分类号： H01L21/00 , H01L25/075 , H01L23/00 , H01L33/54 , H01L33/62 , H01L33/64
CPC分类号： H01L25/0753 , H01L24/24 , H01L33/54 , H01L33/62 , H01L33/641 , H01L2224/24137 , H01L2224/73267 , H01L2924/12041 , H01L2924/15788 , H01L2933/0066 , H01L2924/00
摘要： A light emitting diode array includes a first light emitting diode having a first electrode and a second light emitting diode having a second electrode. The first and second light emitting diodes are separated. A first polymer layer is positioned between the light emitting diodes. An interconnect located at least partially on the first polymer layer connects the first electrode to the second electrode. A permanent substrate is coupled to the light emitting diodes. The permanent substrate is coupled to the side of the light emitting diodes opposite the interconnect. A second polymer layer at least partially encapsulates the side of the light emitting diodes with the interconnect.
摘要翻译：发光二极管阵列包括具有第一电极的第一发光二极管和具有第二电极的第二发光二极管。第一和第二发光二极管被分离。第一聚合物层位于发光二极管之间。至少部分地位于第一聚合物层上的互连将第一电极连接到第二电极。永久基板耦合到发光二极管。永久基板耦合到与互连相对的发光二极管的一侧。第二聚合物层至少部分地用互连封装发光二极管的侧面。

4. 发明申请

US20130161667A1 PATTERNED REFLECTIVE LAYER ON DIELECTRIC LAYER FOR LED ARRAY 审中-公开
标题翻译：用于LED阵列的电介质层上的反射层
公开(公告)号：US20130161667A1
公开(公告)日：2013-06-27
申请号：US13333375
申请日：2011-12-21
申请人： Chia-Nan Chen , Yi-An Lu
发明人： Chia-Nan Chen , Yi-An Lu
IPC分类号： H01L33/60
CPC分类号： H01L27/153 , H01L25/0753 , H01L27/156 , H01L33/0079 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2224/24
摘要： A light emitting diode array includes a first light emitting diode with a first electrode and a second light emitting diode with a second electrode. A first dielectric layer is positioned between the light emitting diodes. A first portion of the first dielectric layer at least partially covers the first light emitting diode and a second portion of the first dielectric layer at least partially covers the second light emitting diode. An interconnect is located at least partially on the first dielectric layer. The interconnect connects the first electrode to the second electrode. A reflective layer is formed over at least the first and second portions of the first dielectric layer. A permanent substrate is coupled to a side of the light emitting diodes having the reflective layer.
摘要翻译：发光二极管阵列包括具有第一电极的第一发光二极管和具有第二电极的第二发光二极管。第一介电层位于发光二极管之间。第一介电层的第一部分至少部分地覆盖第一发光二极管，并且第一介电层的第二部分至少部分地覆盖第二发光二极管。互连至少部分地位于第一介电层上。互连将第一电极连接到第二电极。在第一介电层的至少第一和第二部分上形成反射层。永久基板耦合到具有反射层的发光二极管的一侧。

5. 发明申请

US20050113292A1 Compositions of protein mimetics and methods of using same against HIV-1, SARS-coV and the like 审中-公开
标题翻译：蛋白质模拟物的组合物及其用于HIV-1，SARS-coV等的方法
公开(公告)号：US20050113292A1
公开(公告)日：2005-05-26
申请号：US10893551
申请日：2004-07-16
申请人： James Tam , Qitao Yu , Yi-An Lu , Jin-Long Yang
发明人： James Tam , Qitao Yu , Yi-An Lu , Jin-Long Yang
IPC分类号： A61K38/16 , A61K39/21 , C07K5/02 , C07K14/16 , C12N20060101
CPC分类号： C07K14/005 , A61K38/162 , A61K39/12 , A61K39/21 , A61K2039/645 , C07K5/0202 , C12N2740/16122 , C12N2740/16134
摘要： The present invention provides compositions of protein mimetics and methods of using same against HIV-1, SARS-coV and the like. In one aspect, the present invention relates to a protein mimetic for preventing HIV-1 entry to host cells of a living subject through membrane fusion, wherein HIV-1 contains at least one envelope glycoprotein gp41 that has a plurality of peptides in a pre-hairpin state. In one embodiment, the protein mimetic comprises at least two monomeric peptide strands and an interstrand linker coupling the monomeric peptide strands. The coupled monomeric peptide strands prevent the plurality of trimeric gp41 in a pre-hairpin state from transiting to a six-helix hairpin bundle, thereby inhibiting HIV-1 entry to the host cells through membrane fusion.
摘要翻译：本发明提供了蛋白质模拟物的组合物及其用于HIV-1，SARS-coV等的方法。一方面，本发明涉及通过膜融合来预防HIV-1进入活体受体的宿主细胞的蛋白质模拟物，其中HIV-1含有至少一种在预处理中具有多个肽的包膜糖蛋白gp41，发夹状态在一个实施方案中，蛋白质模拟物包含至少两个单体肽链和偶联单体肽链的链间连接体。偶联的单体肽链阻止了前发夹状态的多个三聚体gp41转运到六螺旋发夹束，从而通过膜融合来抑制HIV-1进入宿主细胞。

6. 发明申请

US20130023074A1 USING ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE 有权
标题翻译：在单个基板上使用多组III族氮化物玻璃在玻璃粘结中使用隔离的外延结构
公开(公告)号：US20130023074A1
公开(公告)日：2013-01-24
申请号：US13185950
申请日：2011-07-19
申请人： Ray-Hua Horng , Yi-An Lu
发明人： Ray-Hua Horng , Yi-An Lu
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. The epitaxial layer is separated into a plurality of epitaxial structures on the first temporary substrate. A second temporary substrate is coupled to the epitaxial layer with a first adhesive layer and the first temporary substrate is removed from the epitaxial layer. A permanent semiconductor substrate is coupled to the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the epitaxial layer. The permanent semiconductor substrate is separated into a plurality of portions with each portion corresponding to at least one of the plurality of epitaxial structures to form a plurality of semiconductor light emitting devices.
摘要翻译：用于形成多个半导体发光器件的方法包括在第一临时衬底上形成具有第一类型掺杂层，发光层和第二类型掺杂层的外延层。外延层在第一临时衬底上被分离成多个外延结构。第二临时衬底用第一粘合剂层耦合到外延层，并且从外延层去除第一临时衬底。永久性半导体衬底用第二粘合剂层耦合到外延层。从外延层去除第二临时衬底和第一粘合剂层。永久性半导体衬底被分成多个部分，每个部分对应于多个外延结构中的至少一个，以形成多个半导体发光器件。

7. 发明申请

US20130023073A1 USING NON-ISOLATED EPITAXIAL STRUCTURES IN GLUE BONDING FOR MULTIPLE GROUP-III NITRIDE LEDS ON A SINGLE SUBSTRATE 审中-公开
标题翻译：在单个基板上使用多组III族氮化物玻璃在玻璃粘结中使用非隔离外延结构
公开(公告)号：US20130023073A1
公开(公告)日：2013-01-24
申请号：US13185909
申请日：2011-07-19
申请人： Ray-Hua Horng , Yi-An Lu
发明人： Ray-Hua Horng , Yi-An Lu
IPC分类号： H01L33/08
CPC分类号： H01L33/0079 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a plurality of semiconductor light emitting devices includes forming an epitaxial layer having a first type doped layer, a light emitting layer, and a second type doped layer on a first temporary substrate. A second temporary substrate is coupled to an upper surface of the epitaxial layer with a first adhesive layer. The first temporary substrate is removed from the epitaxial layer to expose a bottom surface of the epitaxial layer. A permanent semiconductor substrate is coupled to the bottom surface of the epitaxial layer with a second adhesive layer. The second temporary substrate and the first adhesive layer are removed from the upper surface of the epitaxial layer. A plurality of semiconductor light emitting devices are formed from the epitaxial layer on the permanent semiconductor substrate.
摘要翻译：用于形成多个半导体发光器件的方法包括在第一临时衬底上形成具有第一类型掺杂层，发光层和第二类型掺杂层的外延层。第二临时衬底用第一粘合剂层耦合到外延层的上表面。从外延层去除第一临时衬底以暴露外延层的底表面。永久性半导体衬底用第二粘合剂层耦合到外延层的底表面。第二临时衬底和第一粘合剂层从外延层的上表面去除。多个半导体发光器件由永久性半导体衬底上的外延层形成。

8. 发明申请

US20120168715A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120168715A1
公开(公告)日：2012-07-05
申请号：US13116765
申请日：2011-05-26
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L27/15 , H01L33/22 , H01L33/06
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.
摘要翻译：一种制造半导体发光器件的方法包括：（a）提供临时衬底; （b）在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构，其中所述发光单元的第一表面接触所述临时衬底，并且所述发光单元包括n型层，有源区和p型层; （c）在n型层上形成n电极; （d）在p型层上形成p电极; （e）在发光单元，n电极和p电极上键合永久性基板; （f）去除临时衬底以露出发光单元; 和（g）蚀刻暴露的发光单元，以暴露n电极和p电极中的至少一个。

9. 发明授权

US08193015B2 Method of forming a light-emitting-diode array with polymer between light emitting devices 有权
标题翻译：在发光器件之间形成具有聚合物的发光二极管阵列的方法
公开(公告)号：US08193015B2
公开(公告)日：2012-06-05
申请号：US12975068
申请日：2010-12-21
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L21/00 , H01L21/44 , H01L29/207 , H01L29/06 , H01L23/48 , H01L23/58
CPC分类号： H01L27/156 , H01L2224/16225 , H01L2224/16227 , H01L2224/24137 , H01L2224/73267 , H01L2224/82 , H01L2224/92244 , H01L2933/0066
摘要： A method for forming a light-emitting-diode (LED) array is disclosed includes forming an LED structure on a substrate. The LED structure is divided into at least a first LED device and a second LED device with a gap between the first LED device and the second LED device. At least one polymer material is deposited over the LED structure to substantially fill the gap with the at least one polymer material. Portions of the at least one polymer material are removed to expose a first electrode of the first LED device and a second electrode of the second LED device. An interconnect is formed on top of the at least one polymer material electrically connecting the first and second electrode.
摘要翻译：公开了一种用于形成发光二极管（LED）阵列的方法，其在衬底上形成LED结构。 LED结构被分为至少第一LED器件和第二LED器件，第一LED器件与第二LED器件之间具有间隙。至少一种聚合物材料沉积在LED结构上以基本上与至少一种聚合物材料填充间隙。除去至少一种聚合物材料的部分以暴露第一LED器件的第一电极和第二LED器件的第二电极。在至少一个电连接第一和第二电极的聚合物材料的顶部上形成互连。

10. 发明授权

US08574936B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08574936B2
公开(公告)日：2013-11-05
申请号：US13116765
申请日：2011-05-26
申请人： Ray-Hua Horng , Yi-An Lu , Heng Liu
发明人： Ray-Hua Horng , Yi-An Lu , Heng Liu
IPC分类号： H01L27/15 , H01L33/22 , H01L33/06
CPC分类号： H01L27/153 , H01L33/0079 , H01L33/22 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode.
摘要翻译：一种制造半导体发光器件的方法包括：（a）提供临时衬底; （b）在所述临时衬底上形成具有至少一个发光单元的多层LED外延结构，其中所述发光单元的第一表面接触所述临时衬底，并且所述发光单元包括n型层，有源区和p型层; （c）在n型层上形成n电极; （d）在p型层上形成p电极; （e）在发光单元，n电极和p电极上键合永久性基板; （f）去除临时衬底以露出发光单元; 和（g）蚀刻暴露的发光单元，以暴露n电极和p电极中的至少一个。

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