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    • 4. 发明申请
    • POWER AMPLIFIER MODULE HAVING BIAS CIRCUIT
    • 具有偏置电路的功率放大器模块
    • US20130076447A1
    • 2013-03-28
    • US13444491
    • 2012-04-11
    • Gyu Suck KIMYoo Sam NA
    • Gyu Suck KIMYoo Sam NA
    • H03F3/21
    • H03F1/304
    • There is provided a power amplifier module having a bias circuit, in which a bias power is supplied to an amplifier by differently setting an impedance between an input signal terminal and a reference power terminal and an impedance between the input signal terminal and a ground. The power amplifier module includes: an amplifier unit receiving a bias power to amplify an input signal; and a bias unit supplying the bias power to the amplifier, by differently setting an impedance between an input signal terminal transmitting the input signal therethrough and a reference power terminal transmitting a reference power having a predetermined voltage level and an impedance between the input signal terminal and a ground.
    • 提供了一种具有偏置电路的功率放大器模块,其中通过不同地设置输入信号端子和参考电源端子之间的阻抗以及输入信号端子和地之间的阻抗来将偏置功率提供给放大器。 功率放大器模块包括:放大器单元,接收偏置功率以放大输入信号; 以及偏置单元,通过不同地设置发送所述输入信号的输入信号端之间的阻抗和发送具有预定电压电平的参考功率的参考电源端子和所述输入信号端子和 一个地面。
    • 6. 发明申请
    • POWER AMPLIFIER
    • 功率放大器
    • US20110156817A1
    • 2011-06-30
    • US12712071
    • 2010-02-24
    • Hyeon Seok HWANGYoo Sam NAMoon Suk JEONGGyu Suck KIMByeong Hak JO
    • Hyeon Seok HWANGYoo Sam NAMoon Suk JEONGGyu Suck KIMByeong Hak JO
    • H03F3/16
    • H03F1/223
    • Disclosed herein is a power amplifier. The power amplifier includes a first common source transistor for amplifying an input signal into a predetermined level, a second common source transistor for compensating for input capacitance and performing auxiliary amplification for the first common source transistor, and a common gate transistor connected to the first common source transistor in a cascode structure, configured to be connected in parallel to the second common source transistor and prevent the first common source transistor from breaking down, and configured to output a signal amplified by a value obtained by adding the gain of the first common source transistor and the gain of the second common source transistor to each other.
    • 这里公开了功率放大器。 功率放大器包括用于将输入信号放大到预定电平的第一公共源极晶体管,用于补偿输入电容并对第一公共源晶体管执行辅助放大的第二公共源极晶体管,以及连接到第一公共栅极晶体管的公共栅晶体管 源极晶体管,其被配置为并联连接到第二公共源极晶体管,并且防止第一公共源极晶体管分解,并且被配置为输出通过将第一公共源的增益相加而获得的值放大的信号 晶体管和第二公共源极晶体管的增益。
    • 8. 发明申请
    • CMOS POWER AMPLIFIER AND TEMPERATURE COMPENSATION CIRCUIT THEREOF
    • CMOS功率放大器及其温度补偿电路
    • US20110304398A1
    • 2011-12-15
    • US13069652
    • 2011-03-23
    • Yoo Hwan KIMHyun Hwan YOOYoo Sam NAByeong Hak JO
    • Yoo Hwan KIMHyun Hwan YOOYoo Sam NAByeong Hak JO
    • H03F3/04
    • H03F1/30H03F1/303H03F2200/447H03F2200/468
    • Disclosed is a CMOS power amplifier. A temperature compensation circuit of a CMOS power amplifier may include: a bias circuit unit supplying a gate bias voltage to a power amplification circuit part; a bias detection unit determining a class type of the power amplification circuit part according to the gate bias voltage; a temperature detection unit detecting a temperature-proportional voltage in proportion to ambient temperature; a temperature compensation control unit generating a compensation control value according to the temperature-proportion voltage in the class type determined by the bias detection unit; and a conversion unit converting the compensation control value of the temperature compensation control unit into a linear bias control value and providing the linear bias control value to the bias circuit unit, wherein the bias circuit unit compensates the gate bias voltage according to the linear bias control value of the conversion unit.
    • 公开了一种CMOS功率放大器。 CMOS功率放大器的温度补偿电路可以包括:向功率放大电路部分提供栅极偏置电压的偏置电路单元; 偏置检测单元,根据栅极偏置电压确定功率放大电路部分的类别; 温度检测单元,其与环境温度成比例地检测温度成比例的电压; 温度补偿控制单元,根据由偏置检测单元确定的类别中的温度比例电压产生补偿控制值; 以及转换单元,将所述温度补偿控制单元的补偿控制值转换为线性偏置控制值,并将所述线性偏置控制值提供给所述偏置电路单元,其中所述偏置电路单元根据所述线性偏置控制来补偿所述栅极偏置电压 转换单位的价值。
    • 10. 发明申请
    • ACTIVE BALUN WITH STACKED STRUCTURE
    • 主动BALUN与堆叠结构
    • US20110037522A1
    • 2011-02-17
    • US12646351
    • 2009-12-23
    • Moon Suk JEONGYoo Sam NA
    • Moon Suk JEONGYoo Sam NA
    • H03F3/04
    • H03H11/32
    • An active balun with a stacked structure includes: a first amplification unit including a first transistor having a first terminal connected with a first input terminal, a second terminal connected with a power voltage terminal, and a third terminal connected with an output terminal; a second amplification unit including a second transistor having a first terminal connected with a second input terminal, a second terminal connected with the output terminal, and a third terminal connected with a ground; and a capacitance matching unit connected between the first terminal and the third terminal of the first transistor and having a pre-set matching capacitance.
    • 具有堆叠结构的主动平衡 - 不平衡变换器包括:第一放大单元,包括具有与第一输入端连接的第一端子的第一晶体管,与电源电压端子连接的第二端子和与输出端子连接的第三端子; 第二放大单元,包括具有与第二输入端子连接的第一端子的第二晶体管,与输出端子连接的第二端子和与地连接的第三端子; 以及电容匹配单元,连接在第一晶体管的第一端子和第三端子之间并且具有预设匹配电容。