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1. 发明申请

US20140009317A1 ANALOG-TO-DIGITAL SIGNAL CONVERSION METHOD AND APPARATUS THEREFOR 失效
标题翻译：模拟数字信号转换方法及其设备
公开(公告)号：US20140009317A1
公开(公告)日：2014-01-09
申请号：US13620352
申请日：2012-09-14
申请人： Yoo Sam NA , Kang Yoon Lee , Young Gun Pu , Hyung Gu Park , Hong Jin Kim , Yoo Hwan Kim , Dong Su Lee
发明人： Yoo Sam NA , Kang Yoon Lee , Young Gun Pu , Hyung Gu Park , Hong Jin Kim , Yoo Hwan Kim , Dong Su Lee
IPC分类号： H03M1/12 , H03M1/06
CPC分类号： H03M1/06 , H03M1/502
摘要： There are provided an analog-to-digital signal conversion method and apparatus therefor, and a digital phase locked loop circuit including the same. The analog-to-digital signal conversion method may include: generating a first digital output signal having N number of bits by comparing each of N number of delay signals detected from output terminals of N number of delay cells with a reference signal; generating a second digital output signal by comparing an auxiliary delay signal generated by an (N+1)th delay cell with the reference signal; and determining a change in a delay time of each of the N number of delay cells based on the first digital output signal and the second digital output signal.
摘要翻译：提供了一种模拟 - 数字信号转换方法及其装置，以及包括该数字锁相环电路的数字锁相环电路。模数信号转换方法可以包括：通过将从N个延迟单元的输出端子检测的N个延迟信号中的每一个与参考信号相比较来产生具有N个比特数的第一数字输出信号; 通过将由第（N + 1）个延迟单元产生的辅助延迟信号与参考信号进行比较来产生第二数字输出信号; 以及基于所述第一数字输出信号和所述第二数字输出信号确定所述N个延迟单元中的每一个的延迟时间的变化。

2. 发明授权

US08618972B1 Analog-to-digital signal conversion method and apparatus therefor 失效
标题翻译：模数信号转换方法及其装置
公开(公告)号：US08618972B1
公开(公告)日：2013-12-31
申请号：US13620352
申请日：2012-09-14
申请人： Yoo Sam Na , Kang Yoon Lee , Young Gun Pu , Hyung Gu Park , Hong Jin Kim , Yoo Hwan Kim , Dong Su Lee
发明人： Yoo Sam Na , Kang Yoon Lee , Young Gun Pu , Hyung Gu Park , Hong Jin Kim , Yoo Hwan Kim , Dong Su Lee
IPC分类号： H03M1/12
CPC分类号： H03M1/06 , H03M1/502
摘要： There are provided an analog-to-digital signal conversion method and apparatus therefor, and a digital phase locked loop circuit including the same. The analog-to-digital signal conversion method may include: generating a first digital output signal having N number of bits by comparing each of N number of delay signals detected from output terminals of N number of delay cells with a reference signal; generating a second digital output signal by comparing an auxiliary delay signal generated by an (N+1)th delay cell with the reference signal; and determining a change in a delay time of each of the N number of delay cells based on the first digital output signal and the second digital output signal.
摘要翻译：提供了一种模拟 - 数字信号转换方法及其装置，以及包括该数字锁相环电路的数字锁相环电路。模数信号转换方法可以包括：通过将从N个延迟单元的输出端子检测的N个延迟信号中的每一个与参考信号相比较来产生具有N个比特数的第一数字输出信号; 通过将由第（N + 1）个延迟单元产生的辅助延迟信号与参考信号进行比较来产生第二数字输出信号; 以及基于所述第一数字输出信号和所述第二数字输出信号确定所述N个延迟单元中的每一个的延迟时间的变化。

3. 发明授权

US07903576B2 Methods and arrangement for utilization rate display 有权
标题翻译：利用率显示的方法和布置
公开(公告)号：US07903576B2
公开(公告)日：2011-03-08
申请号：US11835233
申请日：2007-08-07
申请人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Ky Hong Le , Dong Su Lee
发明人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Ky Hong Le , Dong Su Lee
IPC分类号： H04J1/16
CPC分类号： H04L43/045 , H04L41/0213 , H04L43/0876 , H04L43/12
摘要： An arrangement in a network device for displaying statistical data pertaining to data traffic that traverses the network device is provided. The arrangement includes a power supply arrangement for providing power to circuitry of the network device. The arrangement also includes a set of network ports, which includes a set of input network ports for receiving the data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement further includes logic arrangement for analyzing data traffic and for displaying statistical data pertaining to the data traffic. The arrangement yet also includes a visual display arrangement, which is configured to display the statistical data, whereas the data traffic is configured to traverse the network device between the set of input network ports and the set of output network ports irrespective whether power is provided to the circuitry of the network device.
摘要翻译：提供了一种用于显示有关跨越网络设备的数据业务的统计数据的网络设备中的布置。该装置包括用于向网络设备的电路提供电力的电源装置。该装置还包括一组网络端口，其包括用于接收数据业务的一组输入网络端口和用于从网络设备输出数据业务的一组输出网络端口。该装置还包括用于分析数据业务并显示与数据业务相关的统计数据的逻辑装置。该配置还包括视觉显示装置，其被配置为显示统计数据，而数据业务被配置为遍历所述一组输入网络端口和所述一组输出网络端口之间的网络设备，而不管是否提供电力网络设备的电路。

4. 发明申请

US20110149801A1 ARRANGEMENT FOR AN ENHANCED COMMUNICATION NETWORK TAP PORT AGGREGATOR AND METHODS THEREOF 有权
标题翻译：增强通信网络端口聚合器的安排及其方法
公开(公告)号：US20110149801A1
公开(公告)日：2011-06-23
申请号：US13036842
申请日：2011-02-28
申请人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Dong Su Lee , Ky Hong Le
发明人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Dong Su Lee , Ky Hong Le
IPC分类号： H04L12/28
CPC分类号： H04L43/00 , H04L12/10 , H04L43/0829 , Y02D50/30
摘要： An arrangement in a network device for facilitating multiple connection speeds with a network is provided. The arrangement includes a set of network ports that includes a set of input network ports for receiving data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement also includes a logic component configured for managing the data traffic and for aggregating the data traffic. The arrangement further includes a monitoring port that is configured to receive the aggregated data traffic. The arrangement also includes a plurality of physical layer interfaces, wherein each physical layer interface is configured to support the multiple connection speeds. The arrangement moreover includes a media access controller that is configured to support at least a single connection speed of the multiple connection speeds.
摘要翻译：提供了一种用于促进与网络的多个连接速度的网络设备中的布置。该装置包括一组网络端口，其包括用于接收数据业务的一组输入网络端口和用于从网络设备输出数据业务的一组输出网络端口。该装置还包括配置用于管理数据业务并用于聚合数据业务的逻辑组件。该配置还包括被配置为接收聚合的数据业务的监控端口。该布置还包括多个物理层接口，其中每个物理层接口被配置为支持多个连接速度。该装置还包括媒体访问控制器，其被配置为支持多个连接速度的至少单个连接速度。

5. 发明授权

US08582472B2 Arrangement for an enhanced communication network tap port aggregator and methods thereof 有权
标题翻译：增强通信网络抽头端口聚合器的布置及其方法
公开(公告)号：US08582472B2
公开(公告)日：2013-11-12
申请号：US13036842
申请日：2011-02-28
申请人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Dong Su Lee , Ky Hong Le
发明人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Dong Su Lee , Ky Hong Le
IPC分类号： H04L12/28
CPC分类号： H04L43/00 , H04L12/10 , H04L43/0829 , Y02D50/30
摘要： An arrangement in a network device for facilitating multiple connection speeds with a network is provided. The arrangement includes a set of network ports that includes a set of input network ports for receiving data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement also includes a logic component configured for managing the data traffic and for aggregating the data traffic. The arrangement further includes a monitoring port that is configured to receive the aggregated data traffic. The arrangement also includes a plurality of physical layer interfaces, wherein each physical layer interface is configured to support the multiple connection speeds. The arrangement moreover includes a media access controller that is configured to support at least a single connection speed of the multiple connection speeds.
摘要翻译：提供了一种用于促进与网络的多个连接速度的网络设备中的布置。该装置包括一组网络端口，其包括用于接收数据业务的一组输入网络端口和用于从网络设备输出数据业务的一组输出网络端口。该装置还包括配置用于管理数据业务并用于聚合数据业务的逻辑组件。该配置还包括被配置为接收聚合的数据业务的监控端口。该布置还包括多个物理层接口，其中每个物理层接口被配置为支持多个连接速度。该装置还包括媒体访问控制器，其被配置为支持多个连接速度的至少单个连接速度。

6. 发明授权

US06498097B1 Apparatus and method of forming preferred orientation-controlled platinum film using oxygen 失效
标题翻译：使用氧形成优选的取向控制铂膜的装置和方法
公开(公告)号：US06498097B1
公开(公告)日：2002-12-24
申请号：US09059638
申请日：1998-04-13
申请人： Dong Yeon Park , Dong Su Lee , Hyun Jung Woo , Dong Il Chun , Eui Joon Yoon
发明人： Dong Yeon Park , Dong Su Lee , Hyun Jung Woo , Dong Il Chun , Eui Joon Yoon
IPC分类号： H01L2144
CPC分类号： H01L28/60 , H01L21/2855 , H01L21/28556 , H01L21/32051
摘要： A platinum film orientation-controlled to (111), (200) and/or (220) is provided by depositing the platinum film under an atmosphere containing an oxygen component such as O2, O3, N2O , N2+O2, or mixtures thereof as well as an inert gas (Ar, Ne, Kr, or Xe) on a substrate heated to a temperature ranged from room temperature to 700° C., and annealing to remove the gases introduced into the platinum film during the deposition thereof. The platinum film formed in this process has excellent electrical conductivity (resistivity is lower than 15 &mgr;&OHgr;-cm), good enough adhesion strength to be used for electronic devices, and does not show hillocks, voids or pinholes.
摘要翻译：通过在包含氧组分如O 2，O 3，N 2 O，N 2 + O 2或其混合物的气氛下沉积铂膜来提供控制到（111），（200）和/或（220）的铂膜取向以及惰性气体（Ar，Ne，Kr或Xe）在加热到室温至700℃的温度下进行退火，并且在其沉积期间除去引入到铂膜中的气体。在该方法中形成的铂膜具有优异的导电性（电阻率低于15μOMEGA-cm），具有足够的粘合强度用于电子器件，并且不显示小丘，空隙或针孔。

7. 发明申请

US20090040932A1 METHODS AND ARRANGEMENT FOR UTILIZATION RATE DISPLAY 有权
标题翻译：利用率显示的方法和布置
公开(公告)号：US20090040932A1
公开(公告)日：2009-02-12
申请号：US11835233
申请日：2007-08-07
申请人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Ky Hong Le , Dong Su Lee
发明人： Eldad Matityahu , Robert Shaw , Dennis Angelo Ramirez Carpio , Ky Hong Le , Dong Su Lee
IPC分类号： G06F11/00
CPC分类号： H04L43/045 , H04L41/0213 , H04L43/0876 , H04L43/12
摘要： An arrangement in a network device for displaying statistical data pertaining to data traffic that traverses the network device is provided. The arrangement includes a power supply arrangement for providing power to circuitry of the network device. The arrangement also includes a set of network ports, which includes a set of input network ports for receiving the data traffic and a set of output network ports for outputting the data traffic from the network device. The arrangement further includes logic arrangement for analyzing data traffic and for displaying statistical data pertaining to the data traffic. The arrangement yet also includes a visual display arrangement, which is configured to display the statistical data, whereas the data traffic is configured to traverse the network device between the set of input network ports and the set of output network ports irrespective whether power is provided to the circuitry of the network device.
摘要翻译：提供了一种用于显示有关跨越网络设备的数据业务的统计数据的网络设备中的布置。该装置包括用于向网络设备的电路提供电力的电源装置。该装置还包括一组网络端口，其包括用于接收数据业务的一组输入网络端口和用于从网络设备输出数据业务的一组输出网络端口。该装置还包括用于分析数据业务并显示与数据业务相关的统计数据的逻辑装置。该配置还包括视觉显示装置，其被配置为显示统计数据，而数据业务被配置为遍历所述一组输入网络端口和所述一组输出网络端口之间的网络设备，而不管是否提供电力网络设备的电路。

8. 发明授权

US06312567B1 Method of forming a (200)-oriented platinum layer 失效
标题翻译：形成（200）取向的铂层的方法
公开(公告)号：US06312567B1
公开(公告)日：2001-11-06
申请号：US09320797
申请日：1999-05-27
申请人： Dong Su Lee , Dong Il Chun , Dong Yeon Park , Eui Joon Yoon , Min Hong Kim , Hyun Jung Woo , Tae Soon Park
发明人： Dong Su Lee , Dong Il Chun , Dong Yeon Park , Eui Joon Yoon , Min Hong Kim , Hyun Jung Woo , Tae Soon Park
IPC分类号： C23C1434
CPC分类号： C23C14/5806 , C23C14/185 , C23C14/58 , H01L21/2855 , H01L28/55 , H01L28/60
摘要： A method of depositing a (200)-oriented platinum thin film on a substrate, including the steps of forming a oxygen containing platinum layer on the surface of a silicon wafer heated to a temperature range over room temperature and not exceeding 700° C. under a mixed gaseous atmosphere of oxygen and inert gas and annealing the substrate at a temperature between 400° C. and 1000° C. The platinum thin film formed according to the present invention in (200)-oriented and does not have any conventional defects such as hillocks or voids.
摘要翻译：一种在衬底上沉积（200）取向的铂薄膜的方法，包括在加热至室温且不超过700℃的温度范围的硅晶片的表面上形成含氧铂层的步骤，氧气和惰性气体的混合气体气氛，并在400℃和1000℃之间的温度下退火衬底。根据本发明形成的铂薄膜（200）取向并且不具有任何常规缺陷作为小丘或空洞。

9. 发明授权

US6054331A Apparatus and methods of depositing a platinum film with anti-oxidizing function over a substrate 失效
标题翻译：在衬底上沉积具有抗氧化功能的铂膜的装置和方法
公开(公告)号：US6054331A
公开(公告)日：2000-04-25
申请号：US3058
申请日：1998-01-05
申请人： Hyun Jung Woo , Dong Yeon Park , Dong Su Lee , Dong Il Chun , Eui Joon Yoon
发明人： Hyun Jung Woo , Dong Yeon Park , Dong Su Lee , Dong Il Chun , Eui Joon Yoon
IPC分类号： C23C14/14 , C23C14/16 , C23C14/58 , H01L21/02 , H01L21/285 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L21/44
CPC分类号： C23C14/165 , C23C14/5806 , H01L28/65
摘要： A platinum film, which is used as a bottom electrode for a capacitor in a DRAM cell or a non-volatile ferroelectric memory cell, is formed in two separate processes, wherein a first thickness platinum part thereof is deposited under an inert gas atmosphere, and the second thickness platinum part is deposited under an atmosphere containing oxygen, nitrogen and/or a mixture thereof as well as an inert gas. The platinum film is annealed under a vacuum atmosphere to remove the oxygen an/or nitrogen introduced during the deposition of the second thickness platinum part. The annealed platinum film prevents formation of an oxide on a functional intermediate film such as a diffusion barrier layer or an adhesion layer, which is provided below the bottom electrode of platinum film.
摘要翻译：在DRAM单元或非易失性铁电体存储单元中用作电容器的底部电极的铂膜在两个分开的工艺中形成，其中第一厚度的铂部分在惰性气体气氛下沉积，并且在包含氧，氮和/或其混合物的气氛以及惰性气体中沉积第二厚度的铂部分。将铂膜在真空气氛下退火以除去在沉积第二厚度铂部件期间引入的氧气或氮气。退火的铂膜防止在设置在铂膜的底部电极下方的扩散阻挡层或粘合层等功能性中间膜上形成氧化物。

10. 发明授权

US5981390A Method for depositing a platinum layer on a silicon wafer 失效
标题翻译：在硅晶片上沉积铂层的方法
公开(公告)号：US5981390A
公开(公告)日：1999-11-09
申请号：US914397
申请日：1997-08-19
申请人： Dong Su Lee , Dong il Chun , Dong Yeon Park , Jo Woong Ha , Eui Joon Yoon , Min Hong Kim , Hyun Jung Woo
发明人： Dong Su Lee , Dong il Chun , Dong Yeon Park , Jo Woong Ha , Eui Joon Yoon , Min Hong Kim , Hyun Jung Woo
IPC分类号： H01L21/285 , H01L21/203 , H01L21/28 , H01L21/288 , H01L21/316 , H01L21/3205 , H01L41/08 , H01L41/09 , H01L21/283 , H01L21/477
CPC分类号： C23C14/5806 , C23C14/14 , H01L21/32051
摘要： The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400 to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stabilize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.
摘要翻译：本发明涉及在硅晶片上沉积铂薄膜的方法。该方法包括以下步骤：在氧化气氛下在绝缘氧化物层上沉积铂层，形成由铂颗粒，氧化铂颗粒和附着在这些晶粒上的氧构成的混合膜（以下将“混合膜”称为 “含氧铂金薄膜”）; 在完全惰性气氛下在含氧铂薄膜上沉积另外的铂薄膜至所需厚度; 并在400〜1300℃的温度下退火硅衬底，以便除去含氧铂金薄膜中独立形式或氧化铂形式存在的氧并稳定整个铂薄膜。含铂的铂薄膜层在附加的铂薄膜层的沉积步骤中用作胶层，并且在退火步骤之后转化为纯铂状态，由此硅衬底在铂之间基本上不具有任何胶层层和硅衬底的绝缘层。

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