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1. 发明申请

US20070257299A1 NOR Flash Memory and Fabrication Process 有权
标题翻译： NOR闪存和制造工艺
公开(公告)号：US20070257299A1
公开(公告)日：2007-11-08
申请号：US11381948
申请日：2006-05-05
申请人： Bomy Chen , Prateep Tuntasood , Der-Tsyr Fan
发明人： Bomy Chen , Prateep Tuntasood , Der-Tsyr Fan
IPC分类号： H01L29/788
CPC分类号： H01L29/7885 , G11C16/0425 , G11C16/0433 , G11C16/0491 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42328
摘要： Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with each of the pairs of cells having first and second conductors adjacent to the bit line diffusions, floating gates beside the first and second conductors, an erase gate between the floating gates, and a source line diffusion in the substrate beneath the erase gate, and at least one additional conductor capacitively coupled to the floating gates. In some disclosed embodiments, the conductors adjacent to the bit line diffusions are word lines, and the additional conductors consist of either a pair of coupling gates which are coupled to respective ones of the floating gates or a single coupling gate which is coupled to both of the floating gates. In another embodiment, the conductors adjacent to the bit line diffusions are program lines, and the third conductors are word lines which extend in a direction perpendicular to the program lines and the diffusions.
摘要翻译：半导体存储器阵列及其制造方法，其中在衬底中形成多个位线扩散，以及在位线扩散之间成对形成的存储单元，其中每对单元具有与位线相邻的第一和第二导体在第一和第二导体旁边的扩散，浮置栅极，浮置栅极之间的擦除栅极以及在擦除栅极下方的衬底中的源极线扩散以及电容耦合到浮动栅极的至少一个附加导体。在一些公开的实施例中，与位线扩散相邻的导体是字线，并且附加导体由耦合到相应浮动栅极的一对耦合栅极或耦合到两个浮动门。在另一个实施例中，与位线扩散相邻的导体是编程线，并且第三导体是在垂直于编程线和扩散的方向上延伸的字线。

2. 发明授权

US07598561B2 NOR flash memory 有权
标题翻译： NOR闪存
公开(公告)号：US07598561B2
公开(公告)日：2009-10-06
申请号：US11381948
申请日：2006-05-05
申请人： Bomy Chen , Prateep Tuntasood , Der-Tsyr Fan
发明人： Bomy Chen , Prateep Tuntasood , Der-Tsyr Fan
IPC分类号： H01L29/788
CPC分类号： H01L29/7885 , G11C16/0425 , G11C16/0433 , G11C16/0491 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L29/42328
摘要： Semiconductor memory array and process of fabrication in which a plurality of bit line diffusions are formed in a substrate, and memory cells formed in pairs between the bit line diffusions, with each of the pairs of cells having first and second conductors adjacent to the bit line diffusions, floating gates beside the first and second conductors, an erase gate between the floating gates, and a source line diffusion in the substrate beneath the erase gate, and at least one additional conductor capacitively coupled to the floating gates. In some disclosed embodiments, the conductors adjacent to the bit line diffusions are word lines, and the additional conductors consist of either a pair of coupling gates which are coupled to respective ones of the floating gates or a single coupling gate which is coupled to both of the floating gates. In another embodiment, the conductors adjacent to the bit line diffusions are program lines, and the third conductors are word lines which extend in a direction perpendicular to the program lines and the diffusions.
摘要翻译：半导体存储器阵列及其制造方法，其中在衬底中形成多个位线扩散，以及在位线扩散之间成对形成的存储单元，其中每对单元具有与位线相邻的第一和第二导体在第一和第二导体旁边的扩散，浮置栅极，浮置栅极之间的擦除栅极以及在擦除栅极下方的衬底中的源极线扩散以及电容耦合到浮动栅极的至少一个附加导体。在一些公开的实施例中，与位线扩散相邻的导体是字线，并且附加导体由耦合到相应浮动栅极的一对耦合栅极或耦合到两个浮动门。在另一个实施例中，与位线扩散相邻的导体是编程线，并且第三导体是在垂直于编程线和扩散的方向上延伸的字线。

3. 发明申请

US20100157687A1 Method for Erasing a Flash Memory Cell or an Array of Such Cells Having Improved Erase Coupling Ratio 有权
标题翻译：擦除闪存单元或具有改善的擦除耦合比的这种单元阵列的方法
公开(公告)号：US20100157687A1
公开(公告)日：2010-06-24
申请号：US12645337
申请日：2009-12-22
申请人： Geeng-Chuan Michael Chern , Ben Sheen , Jonathan Pabustan , Prateep Tuntasood , Der-Tsyr Fan , Yaw Wen Hu
发明人： Geeng-Chuan Michael Chern , Ben Sheen , Jonathan Pabustan , Prateep Tuntasood , Der-Tsyr Fan , Yaw Wen Hu
IPC分类号： G11C16/06 , G11C16/16
CPC分类号： G11C16/16
摘要： A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
摘要翻译：闪存单元是具有第一导电类型的衬底的类型，在第一端具有第二导电类型的第一区域，在第二端处具有与第一端部间隔开的第二导电类型的第二区域，在第一端和第二端之间具有通道区域。闪存单元具有多个堆叠的浮置栅极和控制栅极对，其中浮置栅极位于沟道区域的部分上方并与其绝缘，并且每个控制栅极在浮动栅极上并与之绝缘。闪速存储单元还在通道区域上具有与其绝缘的多个擦除栅极，在每对堆叠的一对浮置栅极和控制栅极之间具有擦除栅极。在擦除闪存单元的方法中，将第一正电压的脉冲施加到交替擦除栅极（“第一交替栅极”）。此外，施加接地电压以擦除除第一交流栅极（“第二交替栅极”）之外的栅极。在擦除闪存单元的第二种方法中，将第一正电压的脉冲施加到第一交流栅极，并且向第二交替栅极和所有控制栅极施加负电压。

4. 发明申请

US20060068529A1 Self-aligned split-gate NAND flash memory and fabrication process 有权
公开(公告)号：US20060068529A1
公开(公告)日：2006-03-30
申请号：US11281182
申请日：2005-11-16
申请人： Chiou-Feng Chen , Caleb Yu-Sheng Cho , Ming-Jer Chen , Der-Tsyr Fan , Prateep Tuntasood
发明人： Chiou-Feng Chen , Caleb Yu-Sheng Cho , Ming-Jer Chen , Der-Tsyr Fan , Prateep Tuntasood
IPC分类号： H01L21/8232
CPC分类号： G11C16/0483 , G11C2216/04 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.

5. 发明申请

US20050145923A1 NAND flash memory with enhanced program and erase performance, and fabrication process 审中-公开
标题翻译： NAND闪存具有增强的编程和擦除性能，以及制作工艺
公开(公告)号：US20050145923A1
公开(公告)日：2005-07-07
申请号：US10753103
申请日：2004-01-06
申请人： Chiou-Feng Chen , Prateep Tuntasood , Der-Tsyr Fan
发明人： Chiou-Feng Chen , Prateep Tuntasood , Der-Tsyr Fan
IPC分类号： G11C16/04 , H01L21/82 , H01L21/8247 , H01L27/115 , H01L29/788
CPC分类号： G11C16/0483 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： NAND flash memory cell array and fabrication process in which control gates and floating gates are stacked in pairs arranged in rows between a bit line diffusion and a common source diffusion, with select gates on both sides of each of the pairs of stacked gates. The gates in each stacked pair are self-aligned with each other and
摘要翻译： NAND闪速存储器单元阵列和制造工艺，其中控制栅极和浮置栅极成对地堆叠成排列在位线扩散和公共源极扩散之间的行，每对堆叠栅极的两侧具有选择栅极。每个堆叠对中的门彼此自对齐，并且时，文本丢失或难以辨认

6. 发明授权

US07217621B2 Self-aligned split-gate NAND flash memory and fabrication process 有权
标题翻译：自对准分闸门NAND闪存和制造工艺
公开(公告)号：US07217621B2
公开(公告)日：2007-05-15
申请号：US11281182
申请日：2005-11-16
申请人： Chiou-Feng Chen , Caleb Yu-Sheng Cho , Ming-Jer Chen , Der-Tsyr Fan , Prateep Tuntasood
发明人： Chiou-Feng Chen , Caleb Yu-Sheng Cho , Ming-Jer Chen , Der-Tsyr Fan , Prateep Tuntasood
IPC分类号： H01L21/336
CPC分类号： G11C16/0483 , G11C2216/04 , H01L27/115 , H01L27/11521 , H01L27/11524
摘要： Self-aligned split-gate NAND flash memory cell array and process of fabrication in which rows of self-aligned split-gate cells are formed between a bit line diffusion and a common source diffusion in the active area of a substrate. Each cell has control and floating gates which are stacked and self-aligned with each other, and erase and select gates which are split from and self-aligned with the stacked gates, with select gates at both ends of each row which partially overlap the bit line the source diffusions. The channel regions beneath the erase gates are heavily doped to reduce the resistance of the channel between the bit line and source diffusions, and the floating gates are surrounded by the other gates in a manner which provides significantly enhanced high voltage coupling to the floating gates from the other gates. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.
摘要翻译：自对准分裂栅极NAND闪速存储单元阵列及其制造工艺，其中自对准分裂栅极单元行在衬底的有源区域中的位线扩散与公共源极扩散之间形成。每个单元具有彼此堆叠和自对准的控制和浮置栅极，并且擦除和选择与层叠栅极分离并与堆叠栅极自对准的栅极，每行的两端的选择栅极部分地重叠位排列源扩散。擦除栅极下面的沟道区域是重掺杂的，以减小位线和源极扩散之间的沟道电阻，并且浮置栅极以其它栅极包围，从而提供显着增强的与浮栅的高电压耦合其他大门。存储器单元比现有技术的单元小得多，并且阵列被偏置，使得其中的所有存储单元可以被同时擦除，而编程是位可选择的。

7. 发明授权

US07037787B2 Flash memory with trench select gate and fabrication process 有权
标题翻译：具有沟槽选择栅和制作工艺的闪存
公开(公告)号：US07037787B2
公开(公告)日：2006-05-02
申请号：US11059475
申请日：2005-02-16
申请人： Der-Tsyr Fan , Jung-Chang Lu , Chiou-Feng Chen , Prateep Tuntasood
发明人： Der-Tsyr Fan , Jung-Chang Lu , Chiou-Feng Chen , Prateep Tuntasood
IPC分类号： H01L29/336
CPC分类号： H01L27/115 , G11C16/0433 , H01L21/28273 , H01L27/11521 , H01L29/42328 , H01L29/42336 , H01L29/66825
摘要： Flash memory and process of fabrication in which memory cells are formed with select gates in trenches between stacked, self-aligned floating and control gates, with buried source and drain regions which are gated by the select gates. Erase paths are formed between projecting rounded edges of the floating gates and the select gates, and programming paths extend from the mid-channel regions between the select gates and floating gates through the gate oxide to the edges of the floating gates. Trenched select gates can be provided on one or both sides of the floating and control gates, depending upon array architecture, and the stacked gates and dielectric covering them are used as a self-aligned mask in etching the substrate and other materials to form the trenches.
摘要翻译：闪存和制造过程，其中在堆叠的，自对准的浮动和控制栅极之间的沟槽中用选择栅极形成存储器单元，其中由选择栅极选通的掩埋的源极和漏极区域。擦除路径形成在浮动栅极和选择栅极的突出的圆形边缘之间，并且编程路径从选择栅极之间的中间沟道区域和通过栅极氧化物的浮动栅极延伸到浮动栅极的边缘。根据阵列结构，可以在浮动和控制栅极的一侧或两侧设置倾斜的选择栅极，并且在蚀刻衬底和其它材料以形成沟槽时将堆叠的栅极和覆盖它们的电介质用作自对准掩模。

8. 发明授权

US06885586B2 Self-aligned split-gate NAND flash memory and fabrication process 有权
标题翻译：自对准分闸门NAND闪存和制造工艺
公开(公告)号：US06885586B2
公开(公告)日：2005-04-26
申请号：US10251664
申请日：2002-09-19
申请人： Chiou-Feng Chen , Der-Tsyr Fan , Jung-Chang Lu , Prateep Tuntasood
发明人： Chiou-Feng Chen , Der-Tsyr Fan , Jung-Chang Lu , Prateep Tuntasood
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/115 , G11C7/00
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524
摘要： Self-aligned split-gate NAND flash memory cell array and method of fabrication in which a series of self-aligned split cells are formed between a bit line diffusion and a common source diffusion. Each cell has control and floating gates which are stacked and self-aligned with each other, and a third gate which is split from but self-aligned with the other two. In some disclosed embodiments, the split gates are utilized as erase gates, and in others they are utilized as select gates. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.
摘要翻译：自对准分离栅极NAND闪存单元阵列及其制造方法，其中在位线扩散与公共源极扩散之间形成一系列自对准分裂单元。每个单元具有彼此堆叠和自对准的控制和浮动栅极，以及与另外两个分离而自对准的第三栅极。在一些公开的实施例中，分裂门用作擦除栅极，而在其它实施例中，它们被用作选择栅极。存储器单元比现有技术的单元小得多，并且阵列被偏置，使得其中的所有存储单元可以被同时擦除，而编程是位可选择的。

9. 发明授权

US07974136B2 Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio 有权
标题翻译：擦除具有改善的擦除耦合比的这种单元的闪存单元或阵列的方法
公开(公告)号：US07974136B2
公开(公告)日：2011-07-05
申请号：US12645337
申请日：2009-12-22
申请人： Geeng-Chuan Michael Chern , Ben Sheen , Jonathan Pabustan , Der-Tsyr Fan , Yaw Wen Hu , Prateep Tuntasood
发明人： Geeng-Chuan Michael Chern , Ben Sheen , Jonathan Pabustan , Der-Tsyr Fan , Yaw Wen Hu , Prateep Tuntasood
IPC分类号： G11C16/04
CPC分类号： G11C16/16
摘要： A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
摘要翻译：闪存单元是具有第一导电类型的衬底的类型，在第一端具有第二导电类型的第一区域，在第二端处具有与第一端部间隔开的第二导电类型的第二区域，在第一端和第二端之间具有通道区域。闪存单元具有多个堆叠的浮置栅极和控制栅极对，其中浮置栅极位于沟道区域的部分上方并与其绝缘，并且每个控制栅极在浮动栅极上并与其隔离。闪速存储单元还在通道区域上具有与其绝缘的多个擦除栅极，在每对堆叠的一对浮置栅极和控制栅极之间具有擦除栅极。在擦除闪存单元的方法中，将第一正电压的脉冲施加到交替擦除栅极（“第一交替栅极”）。此外，施加接地电压以擦除除第一交流栅极（“第二交替栅极”）之外的栅极。在擦除闪存单元的第二种方法中，将第一正电压的脉冲施加到第一交流栅极，并且向第二交替栅极和所有控制栅极施加负电压。

10. 发明授权

US07718488B2 Process of fabricating flash memory with enhanced program and erase coupling 有权
标题翻译：使用增强的编程和擦除耦合制造闪存的过程
公开(公告)号：US07718488B2
公开(公告)日：2010-05-18
申请号：US11380595
申请日：2006-04-27
申请人： Chiou-Feng Chen , Prateep Tuntasood , Der-Tsyr Fan
发明人： Chiou-Feng Chen , Prateep Tuntasood , Der-Tsyr Fan
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , G11C16/0425 , H01L27/115
摘要： Self-aligned split-gate flash memory cell array and process of fabrication in which erase and select gates are positioned on opposite sides of stacked floating and control gates, with source regions in the substrate beneath the erase gates, bit line diffusions which are partially overlapped by select gates at the ends of the rows of the cells. The floating and control gates are self-aligned with each other, and the erase and select gates are split from but self-aligned with the stacked gates. With the floating gates surrounded by the other gates and the source regions, high voltage coupling for both programming and erase operations is significantly enhanced. The memory cells are substantially smaller than prior art cells, and the array is biased so that all of the memory cells in it can be erased simultaneously, while programming is bit selectable.
摘要翻译：自对准分离栅闪存单元阵列和制造工艺，其中擦除和选择栅极位于堆叠的浮置和控制栅极的相对侧上，源极区在擦除栅极下方的衬底中，位线扩散部分重叠通过在单元格行的末端的选择门。浮置和控制栅极彼此自对准，并且擦除和选择栅极与堆叠栅极分离，但是自对准。由于其他栅极和源极区域所围绕的浮动栅极，编程和擦除操作的高电压耦合显着增强。存储器单元比现有技术的单元小得多，并且阵列被偏置，使得其中的所有存储单元可以被同时擦除，而编程是位可选择的。

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