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    • 2. 发明授权
    • Direct non contact measurement
    • 直接非接触测量
    • US07046019B1
    • 2006-05-16
    • US11034122
    • 2005-01-12
    • Moshe SarfatySven Hermann
    • Moshe SarfatySven Hermann
    • G01R31/26H01L21/66
    • G01N23/2251
    • A method of measuring a lower similar layer that is separated from an upper similar layer by an intervening dissimilar layer in an integrated circuit. A first electron beam having a first relatively lower landing energy is directed at the integrated circuit. The first relatively lower landing energy is sufficient to completely penetrate the upper similar layer and insufficient to completely penetrate the intervening dissimilar layer, thereby producing first readings that are characteristic of the upper similar layer. A second electron beam having a second relatively higher landing energy is directed at the integrated circuit, the second relatively higher landing energy is sufficient to completely penetrate the upper similar layer, the intervening dissimilar layer, and the lower similar layer, thereby producing second readings that are characteristic of both the upper similar layer and the lower similar layer. The first readings that are characteristic of the upper similar layer are subtracted from the second readings that are characteristic of both the upper similar layer and the lower similar layer, to produce third readings that are characteristic of only the lower similar layer.
    • 一种测量通过集成电路中的中间不相似层与上部相似层分离的下部相似层的方法。 具有第一相对较低着陆能量的第一电子束被引导到集成电路。 第一相对较低的着陆能量足以完全穿透上部相似层并且不足以完全穿透介入的不同层,从而产生上部相似层的特征的第一读数。 具有第二较高着陆能量的第二电子束指向集成电路,第二相对较高的着陆能足以完全穿透上部相似层,中间不相似层和下部相似层,从而产生第二读数, 是上相似层和下相似层的特征。 从上部相似层和下部相似层的特征的第二个读数中减去上部相似层的特征的第一个读数,以产生只有较低相似层的特征的第三个读数。
    • 4. 发明授权
    • Method and apparatus for monitoring a process by employing principal component analysis
    • 采用主成分分析法监测过程的方法和装置
    • US06368975B1
    • 2002-04-09
    • US09348972
    • 1999-07-07
    • Lalitha BalasubramhanyaMoshe SarfatyJed DavidowDimitris Lymberopoulos
    • Lalitha BalasubramhanyaMoshe SarfatyJed DavidowDimitris Lymberopoulos
    • H01L21302
    • G05B23/024G01N21/274G01N21/3563G01N21/359G01N2201/1293
    • A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component. Preferably the at least one production principal component is compared to the calibration principal component by computing the inner product of the calibration and production principal components.
    • 提供了一种通过采用主成分分析来监测过程的方法和装置。 测量要监控的过程(生产过程)的相关属性。 然后对测量的相关属性执行主成分分析,以便生成至少一个生产主成分; 并且将至少一个生产主成分与与校准过程(校准主成分)相关联的主成分进行比较。 通过测量校准过程的相关属性以及通过对所测量的相关属性执行主成分分析以获得至少一个主成分来获得校准主成分。 识别具有指示期望的处理状态,处理事件和室状态中的至少一个的特征的主要成分,并将其指定为校准主成分。 优选地,通过计算校准和生产主要部件的内积来将至少一个生产主成分与校准主成分进行比较。
    • 9. 发明授权
    • Monitoring of film characteristics during plasma-based semi-conductor processing using optical emission spectroscopy
    • 使用光发射光谱法监测等离子体半导体处理期间的膜特性
    • US06633391B1
    • 2003-10-14
    • US09708258
    • 2000-11-07
    • Hakeem OluseyiMoshe Sarfaty
    • Hakeem OluseyiMoshe Sarfaty
    • G01N2173
    • G01N21/71
    • A method and system to monitor characteristics of films by sensing the spectral emissions of a plasma to which the films are exposed. As a result, the method includes sensing optical energy produced by the plasma. The optical energy has a plurality of spectral bands associated therewith, a subset of which is identified as including information corresponding to the film characteristics. The film characteristics are then measured as a function of this information. To increase the accuracy of the measurements, in one embodiment of the present invention a subgroup of the plurality of spectral bands is observed that has data associated that is substantially independent of the characteristics of interest. The characteristics are then measured as a function of both the information and the data.
    • 通过感测膜暴露于其中的等离子体的光谱发射来监测膜的特性的方法和系统。 结果,该方法包括感测由等离子体产生的光能。 光能具有与其相关联的多个光谱带,其一部分被识别为包括对应于胶片特性的信息。 然后根据该信息测量胶片特性。 为了提高测量的准确度,在本发明的一个实施例中,观察到具有与感兴趣特征基本上独立的数据相关联的多个频谱带的子组。 然后,根据信息和数据的不同,测量特征。
    • 10. 发明授权
    • Eddy-optic sensor for object inspection
    • 用于物体检查的涡流传感器
    • US06608495B2
    • 2003-08-19
    • US09812329
    • 2001-03-19
    • Moshe SarfatyRamaswamy SreenivasanJaim Nulman
    • Moshe SarfatyRamaswamy SreenivasanJaim Nulman
    • G01R1900
    • G01N27/904G01B7/105G01B11/0625G01N27/023
    • A sensor enables simultaneous or sequential eddy current and optical reflectance measurements of conducting film by providing an eddy current inspection coil and a first and a second optical fiber extending axially through the coil. The eddy current inspection coil is excited by a radio frequency generator and induces eddy currents in the conducting film which are sensed using a detector. The conducting film is illuminated by a first optical fiber, and light which is reflected from the conducting film is transmitted by a second optical fiber to a detector. In the case of opaque conducting films, the eddy current sensor measures sheet resistance which is determinative of film thickness. In opaque conducting films, optical reflectance measurements are indicative of characteristics such as grain size and surface oxidation. Eddy current sensing is indicative of sheet resistance which correlates to grain size and film thickness. By providing both optical reflectance and eddy current sensing measurements, conducting film thickness may be accurately determined. Optical reflectance measurements may be used to determine thickness of dielectric films and transparent or semi-transparent conducting films directly. The combined use of electrical and optical reflectance signals provides a single probe unit that measures both dielectric and conducting transparent and semi-transparent films.
    • 传感器通过提供涡流检测线圈和轴向延伸穿过线圈的第一和第二光纤,可以实现导电膜的同时或连续的涡流和光学反射率测量。 涡流检测线圈由射频发生器激发,并在导电膜中感应出涡流,使用检测器检测。 导电膜被第一光纤照射,并且从导电膜反射的光被第二光纤传输到检测器。 在不透明导电膜的情况下,涡流传感器测量薄膜电阻,其决定膜厚度。 在不透明导电膜中,光学反射率测量指示诸如晶粒尺寸和表面氧化的特性。 涡流感测表示与晶粒尺寸和膜厚度相关的薄层电阻。 通过提供光学反射和涡流感测测量,可以精确地确定导电膜厚度。 可以使用光学反射率测量来直接确定电介质膜和透明或半透明导电膜的厚度。 电光反射信号的组合使用可以测量电介质和导电透明和半透明膜的单个探针单元。