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1. 发明授权

US07554653B2 Multitarget 有权
标题翻译：多目标
公开(公告)号：US07554653B2
公开(公告)日：2009-06-30
申请号：US11607096
申请日：2006-12-01
申请人： Björn Magnusson
发明人： Björn Magnusson
IPC分类号： G01C3/08
CPC分类号： G01C3/00
摘要： An electro optic distance measurement apparatus using time of flight measurements and a method therefore are provided for determining a distance to a target of two or more targets located along a common line of sight from the distance measurement apparatus. Approximate distances to the two or more targets are determined by means of the distance measurement apparatus, one of the two or more targets is selected, and an accurate distance to the selected target is determined by means of the distance measurement apparatus.
摘要翻译：提供了一种使用飞行时间测量的电光距离测量装置和一种方法，用于确定距距离测量装置沿着公共视线位于两个或更多个目标位置的距离。通过距离测量装置确定与两个或更多个目标的近似距离，选择两个或更多目标中的一个，并且通过距离测量装置确定到所选目标的准确距离。

2. 发明申请

US20090114924A1 LIGHTLY DOPED SILICON CARBIDE WAFER AND USE THEREOF IN HIGH POWER DEVICES 有权
标题翻译：轻质硅碳化硅陶瓷及其在大功率器件中的应用
公开(公告)号：US20090114924A1
公开(公告)日：2009-05-07
申请号：US12352793
申请日：2009-01-13
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： H01L31/0312 , C30B15/14 , H01L21/02
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
摘要翻译：一种碳化硅单晶的制造方法。生长碳化硅单晶。晶体的硼浓度小于5×10 14 cm -3，过渡金属杂质浓度小于5×10 14 cm -3。晶体中的固有缺陷被最小化。内在缺陷包括硅空位或碳空位。在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

3. 发明授权

US07018597B2 High resistivity silicon carbide single crystal 有权
标题翻译：高电阻率碳化硅单晶
公开(公告)号：US07018597B2
公开(公告)日：2006-03-28
申请号：US10281173
申请日：2002-10-28
申请人： Alexandre Ellison , Nguyen Tien Son , Björn Magnusson , Erik Janzén
发明人： Alexandre Ellison , Nguyen Tien Son , Björn Magnusson , Erik Janzén
IPC分类号： C30B29/36
CPC分类号： H01L21/0445 , C30B25/00 , C30B29/36
摘要： The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.
摘要翻译：本发明的目的是提供具有适于随后的器件制造的电性能和结构质量的高电阻率碳化硅衬底，例如高频器件，使得器件可以呈现稳定和线性的特性并提供高电阻率具有低密度的结构缺陷的碳化硅衬底和其电阻率的基本受控均匀的径向分布。

4. 发明授权

US08396681B2 Prediction algorithm for scanning an object 有权
标题翻译：用于扫描对象的预测算法
公开(公告)号：US08396681B2
公开(公告)日：2013-03-12
申请号：US12448973
申请日：2007-01-25
申请人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johansson , Björn Magnusson
发明人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johansson , Björn Magnusson
IPC分类号： G01C17/38 , G01C1/00 , G01B11/14
CPC分类号： G01B11/00 , G01C15/00 , G01S17/42
摘要： A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.
摘要翻译：公开了一种距离测量仪器和用于扫描物体的表面或体积的这种站的方法。测量仪器包括位置计算电路，其适于计算至少包括水平和垂直角度以及测量仪器和物体之间的距离的位置数据。在测量会话期间在对象的扫描区域的多个子集中的多个子集中的每一个中的多个点，并且在检测到新子集中的新点时，与至少一个点相关联的信息具有至少一个使用前一子集，其中前述子集与新子集相邻。

5. 发明授权

US08097524B2 Lightly doped silicon carbide wafer and use thereof in high power devices 有权
标题翻译：轻掺杂碳化硅晶片及其在高功率器件中的应用
公开(公告)号：US08097524B2
公开(公告)日：2012-01-17
申请号：US12352793
申请日：2009-01-13
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： C30B15/14
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×1014 cm−3, and a concentration of transition metals impurities less than 5×1014 cm−3. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.
摘要翻译：一种碳化硅单晶的制造方法。生长碳化硅单晶。该晶体的硼浓度小于5×1014cm-3，过渡金属杂质浓度小于5×1014cm-3。晶体中的固有缺陷被最小化。内在缺陷包括硅空位或碳空位。在包含任何气体氢气或氢气和惰性气体的混合物的气氛中，在高于700℃的温度下将晶体退火所需时间，使得本征缺陷和任何相关缺陷的密度降低到浓度足够低以使晶体在室温下达到至少50ns的所需载流子寿命。

6. 发明授权

US08803160B2 Lightly doped silicon carbide wafer and use thereof in high power devices 有权
标题翻译：轻掺杂碳化硅晶片及其在高功率器件中的应用
公开(公告)号：US08803160B2
公开(公告)日：2014-08-12
申请号：US13340192
申请日：2011-12-29
申请人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
发明人： Alexandre Ellison , Björn Magnusson , Asko Vehanen , Dietrich Stephani , Heinz Mitlehner , Peter Friedrichs
IPC分类号： H01L29/15
CPC分类号： H01L29/7395 , C30B25/00 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0262 , H01L21/0455 , H01L29/1608 , H01L29/66068 , Y10S438/931
摘要： A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 1015 cm−3 and a carrier lifetime of at least 50 ns.
摘要翻译：一种半导体器件，包括用作具有正面和背面的衬底层的第一导电类型的漂移区。第一接触电极布置在漂移区的前侧。控制区域布置在前侧，并且控制至少第一导电类型的载流子注入漂移区。第二接触电极布置在漂移区的背面。漂移区布置成在第一和第二接触电极之间承载载流子。漂移区包括净载流子浓度小于1015cm-3且载流子寿命至少为50ns的碳化硅晶片。

7. 发明授权

US07827897B2 Light ballistic protection as building elements 有权
标题翻译：轻型防弹作为建筑元素
公开(公告)号：US07827897B2
公开(公告)日：2010-11-09
申请号：US11720340
申请日：2005-12-20
申请人： Björn Magnusson , Lars-Olov Wallerman , Anders Karlström , Lars Jacobsson , Henric Rhedin
发明人： Björn Magnusson , Lars-Olov Wallerman , Anders Karlström , Lars Jacobsson , Henric Rhedin
IPC分类号： F41H5/04
CPC分类号： F41H5/0492
摘要： The present invention concerns a ballistic protection against objects such as projectiles from fire arms, alternatively scatter from for example hand grenades. The protection comprises an enclosure (1, 2, 4, 5, 6, 7, 9) adapted so that the object (10) can penetrate the enclosure (1, 2, 4, 5, 6, 7, 9) in at least one area (2); at least one intermediate layer (3) comprising granules (27) arranged within the enclosure (1, 2, 4, 5, 6, 7, 9), which intermediate layer (3) and enclosure (1, 2, 4, 5, 6, 7, 9) are arranged to decelerate said object (10). The invention is further characterized in that: the granules (27) are movable arranged with respect to each other; the space in the intermediate layer (3) that is not occupied by granules (27) is filled by a gas medium to enable contact between adjacent granules (27); the granules (27) have mechanical properties so that a granule (27) is crushed and spread in the intermediate layer (3) when it is hit by an object (10), at the same time as adjacent granules (27) are subjected to impulses with a subsequent energy dissipation so that the object and fragments thereof remains in the protection with a reduced risk for ricochets.
摘要翻译：本发明涉及对来自火臂的射弹等物体的防弹保护，或者例如手榴弹散射。保护装置包括适于使物体（10）至少能够穿过外壳（1,2,4,5,6,7,9）的外壳（1,2,4,5,6,7,9），至少一个区域（2）; 至少一个中间层（3），其包括布置在所述外壳（1，2，4，5，6，7，9）内的颗粒（27），所述中间层（3）和外壳（1,2,3,4,5,9） 6，7,9）被布置成使所述物体（10）减速。本发明的特征还在于：颗粒（27）相对于彼此可移动地布置; 未被颗粒（27）占据的中间层（3）中的空间被气体介质填充以使相邻的颗粒（27）能够接触; 颗粒（27）具有机械特性，使得当颗粒（27）被物体（10）撞击时，颗粒（27）被粉碎并扩散在中间层（3）中，同时相邻颗粒（27）经受具有随后的能量耗散的脉冲，使得其物体和碎片保持在保护中，降低了引气的风险。

8. 发明申请

US20100070229A1 PREDICTION ALGORITHM FOR SCNNING AN OBJECT 有权
标题翻译：预测对象的预测算法
公开(公告)号：US20100070229A1
公开(公告)日：2010-03-18
申请号：US12448973
申请日：2007-01-25
申请人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johannson , Björn Magnusson
发明人： Set Svanholm , Grégory Lepere , Guillaume David , Fredrik Gylesjö , Sven Johannson , Björn Magnusson
IPC分类号： G01B11/24 , G06F19/00
CPC分类号： G01B11/00 , G01C15/00 , G01S17/42
摘要： A distance measuring measurement instrument and a method for such a station for scanning a surface or volume of an object are disclosed. The measurement instrument includes a position calculating circuit adapted to calculate position data including at least horizontal and vertical angle and distance between the measurement instrument and the object. A plurality of points in each of a number of subsets of a scanning area of the object during a measurement session and, at detection of a new point in the new subset, information related to at least one point having a corresponding location in at least one preceding subset is used, wherein the preceding subset being adjacent to the new subset.
摘要翻译：公开了一种距离测量仪器和用于扫描物体的表面或体积的这种站的方法。测量仪器包括位置计算电路，其适于计算至少包括水平和垂直角度以及测量仪器和物体之间的距离的位置数据。在测量会话期间在对象的扫描区域的多个子集中的多个子集中的每一个中的多个点，并且在检测到新子集中的新点时，与至少一个点相关联的信息具有至少一个使用前一子集，其中前述子集与新子集相邻。

9. 发明授权

US07111165B2 Key and lock device 有权
标题翻译：钥匙和锁定装置
公开(公告)号：US07111165B2
公开(公告)日：2006-09-19
申请号：US09802931
申请日：2001-03-12
申请人： Inge Lidén , Rolf Norberg , Björn Magnusson , Hannu Sivonen , Gudrun Brennecke , Christophe Chanel , Jürgen Krühn , Bernd Kikebusch , Arnaud Lefebvre
发明人： Inge Lidén , Rolf Norberg , Björn Magnusson , Hannu Sivonen , Gudrun Brennecke , Christophe Chanel , Jürgen Krühn , Bernd Kikebusch , Arnaud Lefebvre
IPC分类号： H04L9/00
CPC分类号： G07C9/00309 , G07C2009/00404 , G07C2009/00412 , G07C2009/005 , G07C2009/00587 , G07C2009/00761 , Y10T70/7147
摘要： A method of authorizing a key or lock device comprises the following steps: a first user device and a first system device used in a first level of a lock system, such as at a manufacturer, are created. A first encryption key is stored in the first user device and the first system device. When the user device is to be shipped to a second level of the lock system, such as a locksmith, an authentication process is carried out between the first user device and the first system device using the first encryption key stored therein. In case the authentication process was successful, a software operation is carried out by the first system device, by which the first encryption key stored in the first user device is replaced by a second encryption key. This second encryption key is stored in second system and user devices used in the second level of the lock system, thereby making the first user device operable with the second system and user devices. This prevents unauthorized use of keys and locks.
摘要翻译：授权密钥或锁定装置的方法包括以下步骤：在诸如制造商的锁系统的第一级中使用的第一用户装置和第一系统装置。第一加密密钥存储在第一用户设备和第一系统设备中。当用户设备要被运送到诸如锁匠的锁系统的第二级时，使用存储在其中的第一加密密钥在第一用户设备和第一系统设备之间执行认证处理。在认证处理成功的情况下，由第一系统设备执行软件操作，由第一系统设备将第一用户设备中存储的第一加密密钥替换为第二加密密钥。该第二加密密钥存储在在锁系统的第二级使用的第二系统和用户设备中，从而使第一用户设备可与第二系统和用户设备一起使用。这可以防止未经授权使用钥匙和锁。

10. 发明授权

US06822552B2 Key and lock device 有权
标题翻译：钥匙和锁定装置
公开(公告)号：US06822552B2
公开(公告)日：2004-11-23
申请号：US09802934
申请日：2001-03-12
申请人： Inge Lidën , Rolf Norberg , Björn Magnusson , Hannu Sivonen , Gudrun Brennecke , Christophe Chanel , Jürgen Krühn , Bernd Kikebusch , Arnaud Lefebvre
发明人： Inge Lidën , Rolf Norberg , Björn Magnusson , Hannu Sivonen , Gudrun Brennecke , Christophe Chanel , Jürgen Krühn , Bernd Kikebusch , Arnaud Lefebvre
IPC分类号： G05B1900
CPC分类号： G07C9/00309 , G07C2009/00404 , G07C2009/00412 , G07C2009/005 , G07C2009/00587 , G07C2009/00761
摘要： A key and lock device comprises a key and a standalone lock. The key has an electronic circuitry with a first memory and a contact. The lock has electronic circuitry with a memory, and a contact arranged to co-operate with the key's first contact. A blocking mechanism is adapted to block operation of the lock unless an authorized key is inserted in the lock. The memory of the key stores a public identification item of the key identifying a group of keys having identical mechanical codes. In the memory of the lock, there is provided a list of the public and secret identification items of authorized keys and a list of the public identification item of non-authorized keys. A key is authorized if the public and secret identification items are present in the list of authorized keys and the public identification item thereof is absent in the list of non-authorized keys.
摘要翻译：钥匙和锁定装置包括钥匙和独立锁。钥匙具有具有第一存储器和接触件的电子电路。锁具有具有存储器的电子电路，以及布置成与钥匙的第一接触件配合的触点。阻塞机构适用于阻止锁的操作，除非授权的钥匙插入锁中。密钥的存储器存储用于识别具有相同机械代码的一组密钥的密钥的公共识别项目。在锁的存储器中，提供了授权密钥的公共和秘密识别项目以及非授权密钥的公共识别项目的列表。如果公钥和秘密识别项目存在于授权密钥列表中并且其公开标识项目不在未授权密钥列表中，则授权密钥。

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